lower half of memoryとは 意味・読み方・使い方

The snapshot comparison looks similar to a memory snapshot but only displays the differences between the two compared snapshots.The graphical bar in the Live Bytes column enables you to easily see the difference in the bytes allocated.If the left half of the cell in that column is green it means that the number of allocated bytes for that object is lower when the second snapshot was takenthan it was when the first was taken.If the right half of the cell is red it means that the number of allocated bytes is higher in the second snapshot than in the first.In the other columns you can see that a plus sign ( + ) indicates that the value increased and a minus sign ( - ) indicates that the value decreased. Note.例文帳に追加

ご意見をお寄せください - NetBeans

A magnetic tape cartridge 1 is provided with a cartridge memory 2 in a cartridge case 1C which is constituted of a lower half 1A and an upper half 1B.例文帳に追加

磁気テープカートリッジ１は、下ハーフ１Ａと上ハーフ１Ｂで構成されるカートリッジケース１Ｃ内にカートリッジメモリ２を備えている。 - 特許庁

The multi-bit resistive memory cell includes a half of the low-resistance state and a half of high-resistance state, data are stored in the lower half resistive state, by inverting a data scheduled to be stored in the higher half resistance state.例文帳に追加

マルチビット抵抗メモリセルは、抵抗状態の低い方の半分と高い方の半分とを含み、高い方の半分に記憶される予定のデータを反転させることによって、抵抗状態の低い方の半分にデータを記憶する。 - 特許庁

The resilient member-attached garment is provided with a shape-memory alloy disposed at a position corresponding to the front part of the human body so as to support the upper half body by the lower half body such as the thigh when the wearer bends forward.例文帳に追加

被服の人体の前部にあたるところに形状記憶合金部材を配置し、前屈になったとき、上半身を腿等の下半身で支えるようにした。 - 特許庁

A cutting line part 2d is formed in part of the cartridge memory 2 and the part 2e of one side which is bordered by the cutting line part 2d is fixed to the sidewall 11B of the upper half 1B and the part 2f of the other side is fixed to the sidewall 11A of the lower half 1A.例文帳に追加

このカートリッジメモリ２は、その一部に切取線部２ｄが形成され、この切取線部２ｄを境にした一方側の部分２ｅが上ハーフ１Ｂの側壁１１Ｂに固着され、他方側の部分２ｆが下ハーフ１Ａの側壁１１Ａに固着されている。 - 特許庁

The memory has a plurality of memory cell transistors each comprising a gate insulation film 2 electrically conducting owing to a tunnel effect, a floating gate electrode 21 on the gate insulation film 2, an inter-electrode insulation film 11 formed on the floating gate electrode 21 having a positive charge layer at the layer side of the lower half of a film thickness, and a control gate electrode 24 on the insulation film 11.例文帳に追加

トンネル効果で電気伝導するゲート絶縁膜２と、このゲート絶縁膜２上の浮遊ゲート電極２１と、この浮遊ゲート電極２１上に配置され、膜厚の半分よりも下層側に正電荷層を有する電極間絶縁膜１１と、この電極間絶縁膜１１上の制御ゲート電極２４とを備えるメモリセルトランジスタを複数個配置する。 - 特許庁