ソース電極と半導体の界面及びドレイン電極と半導体界面に対してキャリアの注入効率及び抽出効率の向上を両立し、動作周波数が大きく且つ低消費電力な有機トランジスタとその製造方法、及びこれを用いた画素バラツキの小さい表示装置を提供すること。例文帳に追加

To provide an organic transistor which has a high operating frequency and whose power consumption is low and a method of manufacturing the same by improving both carrier injection efficiency and extraction efficiency for an interface between a source electrode and a semiconductor, and an interface between a drain electrode and the semiconductor, and to provide a display device with small pixel variance using the same. - 特許庁

ＳＯＩ基板を用いてデバイスの高速動作化や低消費電力化等を図るに際して、ＳＯＩ基板の半導体層と絶縁層との界面準位を低減し、キャリア移動度を向上させて素子動作性能及び信頼性の大幅な向上をもたらす。例文帳に追加

To significantly improve the operational performance and reliability of an element by reducing the interfacial level in the interface between the semiconductor layer and insulating layer of an SOI substrate and improving the carrier mobility of the substrate when improving the operating speed of a semiconductor device, reducing the power consumption of the device, and so on, by using the SOI substrate. - 特許庁

半導体層と電極との界面の平坦性を悪化させることなくＡuの拡散を抑制でき、内部光散乱や吸収損失を低減して高い発振効率で低消費電力動作ができる半導体レーザ素子とその製造方法を提供する。例文帳に追加

To provide a semiconductor laser device capable of suppressing a diffusion of Au, without making the flatness of the interface between a semiconductor layer and an electrode and capable of acting a low electric power consumption with a high oscillation efficiency, by reducing an internal light scattering and an absorption loss, and to provide a method of manufacturing the semiconductor laser device. - 特許庁

ワイドバンドギャップを有する半導体材料を使用しているため耐電圧特性等に優れ、大電力に使用すること等が可能、その上フラットバンドの位置も適切で、界面準位の低下が発生せず、高速作動する電子デバイスを提供する。例文帳に追加

To provide an electronic device which is so excellent in voltage endurance characteristics as to be usable to high electric power, and where the position of a flat band is so proper as to avoid occurrence of lowering of an interface level to operate at high speed by using a semiconductor material having a wide band gap. - 特許庁

回路基板と放熱ベースとを接合するはんだ層にクラックが発生すること及び金属放熱板とアルミニウム層との界面に化合物層が形成されることを防止することにより高い放熱効率および耐久性を兼ね備え、搭載する半導体チップを大電力で動作させることのできる回路基板およびそれを用いた半導体モジュールを提供すること。例文帳に追加

To provide a circuit board having both high heat radiation efficiency and durability, in which a semiconductor chip to be mounted can operate with a large power by preventing the generation of cracks on a solder layer for joining the circuit board to a heat radiation base and the forming of a compound layer on an interface between a metal heat radiation plate and an aluminum layer. - 特許庁