channel islandとは 意味・読み方・使い方

A barrier island 24B is formed on the channel 23A1 of a semiconductor MOSFET through the intermediary of a first tunnel insulating film 24A, and a memory island 24D is formed thereon through the intermediary of a second tunnel insulating film 24C.例文帳に追加

半導体からなるＭＯＳＦＥＴのチャネル２３Ａ１上に第１のトンネル性絶縁膜２４Ａを介しバリア島２４Ｂを形成し、その上に第２のトンネル性絶縁膜２４Ｃを介しメモリ島２４Ｄを形成する。 - 特許庁

The semiconductor device having an island semiconductor film which is to be a channel formation region, and a semiconductor film which contacts a side of the island semiconductor film and is to be a source region or a drain region and a preparing method of the same are provided.例文帳に追加

本発明は、チャネル形成領域となる島状半導体膜と、前記島状半導体膜の側面に接し、ソース領域又はドレイン領域となる半導体膜を有する半導体装置及びその作製方法に関する。 - 特許庁

In a process that water 10 falling from the fountain flows into the channel 11 of the floating island and returns to the water surface of the pond, the floating island begins to slowly circle in one direction.例文帳に追加

噴水から落下する水１０は、浮島のみぞに流れ込み、池の水面へと戻っていく過程で、浮島がゆっくりと一方方向へとまわり出す。 - 特許庁

The semiconductor device includes: a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; and a second island-like reinforcement film covering the first conductive film and the gate insulating film.例文帳に追加

可撓性を有する基板上に設けられた第１の島状の補強膜と、第１の島状の補強膜上に、チャネル形成領域と不純物領域とを具備する半導体膜と、チャネル形成領域の上方にゲート絶縁膜を介して設けられた第１の導電膜と、第１の導電膜及びゲート絶縁膜を覆って設けられた第２の島状の補強膜とを有している。 - 特許庁

In the manufacturing method of the TFT LCD pixel unit, in addition to formation of a first insulating layer (gate insulating layer) and a passivation layer, a second insulating layer is adopted to cover a gate island and an opening part is formed such that a channel region, a source region and a drain region of the TFT are exposed on the gate island.例文帳に追加

第一の絶縁層（ゲート絶縁層）及びパッシベーション層を形成する事に加えて、第二の絶縁層でゲート・アイランドが覆われ、ゲート・アイランド上にＴＦＴのチャネル領域、ソース領域、ドレイン領域が露出されるように開口部を形成する。 - 特許庁

In either one side of the source side or the drain side of the island-type semiconductor thin film SEMI-l; a branch closed circuit DET is provided by extending a gate electrode GT endlessly along the profile of the island-type semiconductor thin film SEMI-l, to eliminate the current component route at the end of the island-type semiconductor thin film SEMI-l which will become a sub channel.例文帳に追加

島状半導体薄膜ＳＥＭＩ−lのソース側かドレイン側のどちらか片側において、ゲート電極ＧＴを該島状半導体薄膜ＳＥＭＩ−lの輪郭に沿って切れ目なく延長させて分岐閉路ＤＥＴを設け、サブチャネルとなる島状半導体薄膜ＳＥＭＩ−lの端部の電流成分経路を無くす。 - 特許庁

A semiconductor film comprises a channel region and a source region as well as a drain region, into both of which impurity is doped and which are provided with an island-type plane pattern, and a gate electrode arranged so as to be opposed to the channel region through a gate insulating film.例文帳に追加

チャネル領域と不純物がドープされたソース領域及びドレイン領域とを含むと共に島状の平面パターンを有する半導体膜と、チャネル領域にゲート絶縁膜を介して対向配置されたゲート電極とを備える。 - 特許庁

Then, The parts of the first/second island-like crystal films are etched with the source/drain electrodes as a mask to form a channel-formed region.例文帳に追加

更に、ソース／ドレイン電極をマスクとして、第１／第２の島状の結晶性半導体膜の一部をエッチングしてチャネル形成領域を形成する。 - 特許庁