「"たいじりつ"」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

窒化物半導体自立基板及びそれを用いたデバイス例文帳に追加

NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE AND DEVICE USING SAME - 特許庁

ＩＩＩ族窒化物半導体自立基板例文帳に追加

GROUP III NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE - 特許庁

窒化物半導体自立基板の製造方法例文帳に追加

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE FREE-STANDING SUBSTRATE - 特許庁

ＧａＮ系窒化物半導体自立基板の作製方法例文帳に追加

METHOD FOR MANUFACTURING GaN-BASED NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE - 特許庁

自立基板の反りを低減した窒化物半導体自立基板及び窒化物半導体自立基板の製造方法を提供する。例文帳に追加

To provide a nitride semiconductor free-standing substrate with a reduced warping of the free-standing substrate and manufacturing process of the nitride semiconductor free-standing substrate. - 特許庁

自律応答性ゲルの配列体、自律応答体、自律応答装置、自律応答方法、及び自律応答性ゲルの配列体の製造方法例文帳に追加

ARRAY OF AUTONOMOUSLY RESPONDING GEL, AUTONOMOUSLY RESPONDING MATERIAL, AUTONOMOUSLY RESPONDING DEVICE, AUTONOMOUSLY RESPONDING METHOD AND METHOD FOR PRODUCING ARRAY OF AUTONOMOUSLY RESPONDING GEL - 特許庁

高い帯磁率を有するパラジウムナノ粒子を提供すること。例文帳に追加

To provide nanoparticles of palladium having high susceptibility. - 特許庁

ＳｉＣ半導体自立基板及びＳｉＣ半導体電子デバイス例文帳に追加

SiC SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE AND SiC SEMICONDUCTOR ELECTRONIC DEVICE - 特許庁

ＩＩＩ族窒化物半導体自立基板およびその製造方法例文帳に追加

SELF-SUPPORTED GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD - 特許庁

窒化物半導体自立基板及び窒化物半導体発光素子例文帳に追加

NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - 特許庁

ＩＩＩ−Ｖ族窒化物系半導体自立基板の製造方法例文帳に追加

METHOD FOR MANUFACTURING SELF-SUPPORTING SUBSTRATE OF GROUP III-V NITRIDE-BASED SEMICONDUCTOR - 特許庁

閃亜鉛鉱型窒化物半導体自立基板、閃亜鉛鉱型窒化物半導体自立基板の製造方法、及び閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置例文帳に追加

SPHALERITE TYPE NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE, MANUFACTURING METHOD OF SPHALERITE TYPE NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING DEVICE USING SPHALERITE TYPE NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE - 特許庁

本発明に係る窒化物半導体自立基板は、窒化物半導体結晶からなる窒化物半導体自立基板において、窒化物半導体自立基板の内部に、基板表面と平行な断面において１０個／ｃｍ^２以上から６００個／ｃｍ^２以下の密度でインバージョンドメインを有する。例文帳に追加

The nitride semiconductor free-standing substrate is composed of a nitride semiconductor crystal and has an inversion domain with a density of not less than 10/cm^2 and not more than 600/cm^2 in the cross section parallel to the surface of the substrate in the inside of the substrate. - 特許庁

窒化物半導体自立基板及びその製造方法、並びにレーザーダイオード例文帳に追加

NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, AND LASER DIODE - 特許庁

窒化物半導体自立基板及びその製造方法、並びにそれを用いた窒化物半導体発光素子例文帳に追加

NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, ITS PRODUCTION METHOD, AND NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAME - 特許庁

窒化物半導体結晶構造及び窒化物半導体自立基板の製造方法例文帳に追加

NITRIDE SEMICONDUCTOR CRYSTAL STRUCTURE AND METHOD FOR MANUFACTURING FREE-STANDING NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

窒化物半導体基板の製造方法及び窒化物半導体自立基板の製造方法例文帳に追加

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE - 特許庁

レーザ剥離装置、レーザ剥離方法、ＩＩＩ族窒化物半導体自立基板の製造方法例文帳に追加

LASER PEELING DEVICE, LASER PEELING METHOD, AND METHOD OF MANUFACTURING SELF-SUPPORTING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - 特許庁

自律制御プログラム及びその記録媒体、自律制御装置並びに自律制御方法例文帳に追加

AUTONOMOUS CONTROL PROGRAM AND ITS RECORDING MEDIUM, AUTONOMOUS CONTROLLER AND AUTONOMOUS CONTROL METHOD - 特許庁

自律移動体、自律移動体の向き補正方法及び自律移動体の向き補正プログラム例文帳に追加

AUTONOMOUS MOBILE BODY, DIRECTION CORRECTION METHOD FOR AUTONOMOUS MOBILE BODY AND DIRECTION CORRECTION PROGRAM FOR AUTONOMOUS MOBILE BODY - 特許庁

自律移動体，自律移動体制御システムおよび自律移動体の自己位置推定方法例文帳に追加

AUTONOMOUS MOBILE BODY, AUTONOMOUS MOBILE BODY CONTROL SYSTEM AND SELF-POSITION ESTIMATION METHOD FOR AUTONOMOUS MOBILE BODY - 特許庁

緑色単色の発光が得られる閃亜鉛鉱型窒化物半導体自立基板および、当該閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置とを提供する。例文帳に追加

To provide a sphalerite type nitride semiconductor self-supporting substrate from which green monochrome emission is obtained and to provide a light-emitting device using the sphalerite type nitride semiconductor self-supporting substrate. - 特許庁

サファイア基板をスムーズに除去することができるIII族窒化物半導体自立基板の製造方法、III族窒化物半導体自立基板を提供すること。例文帳に追加

To provide a method for manufacturing a group III nitride semiconductor self-supporting substrate for smoothly removing a sapphire substrate, and to provide a group III nitride semiconductor self-supporting substrate. - 特許庁

窒化物半導体単結晶の破壊の原因になる亀裂（クラック）が生じにくい窒化物半導体自立基板、窒化物半導体自立基板の製造方法、及び窒化物半導体デバイスを提供する。例文帳に追加

To provide a nitride semiconductor free-standing substrate in which cracks causing breakdown of a nitride semiconductor single crystal are hardly generated, to provide a method for producing the nitride semiconductor free-standing substrate, and to provide a nitride semiconductor device. - 特許庁

３−５族窒化物半導体積層基板、３−５族窒化物半導体自立基板の製造方法、及び半導体素子例文帳に追加

MANUFACTURING METHOD OF GROUP 3-5 NITRIDE SEMICONDUCTOR LAMINATED SUBSTRATE, AND GROUP 3-5 NITRIDE SEMICONDUCTOR INDEPENDENCE SUBSTRATE, AND SEMICONDUCTOR ELEMENT - 特許庁

これらの閃亜鉛鉱型窒化物半導体自立基板を用いることにより、発光の単色性のよい発光装置の製造が可能となる。例文帳に追加

The light-emitting device having good luminescence monochromaticity can be manufactured by using these sphalerite type nitride semiconductor self-supporting substrates. - 特許庁

窒化物半導体結晶成長用基体、窒化物半導体積層体、窒化物半導体自立基板及びそれらの製造方法例文帳に追加

SUBSTRATE FOR GROWTH OF NITRIDE SEMICONDUCTOR CRYSTAL, NITRIDE SEMICONDUCTOR LAMINATE, NITRIDE SEMICONDUCTOR BASE LAYER DESORPTION SUBSTRATE, AND THEIR MANUFACTURING METHODS - 特許庁

ＩＩＩ−Ｖ族窒化物系半導体自立基板及びその製造方法並びにＩＩＩ−Ｖ族窒化物系半導体例文帳に追加

GROUP III-V NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE, ITS PRODUCING METHOD, AND GROUP III-V NITRIDE SEMICONDUCTOR - 特許庁

窒化物半導体下地基板、窒化物半導体積層基板および窒化物半導体自立基板、並びに窒化物半導体下地基板の製造方法例文帳に追加

NITRIDE SEMICONDUCTOR GROUND SUBSTRATE, NITRIDE SEMICONDUCTOR-STACKED SUBSTRATE, NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR GROUND SUBSTRATE - 特許庁

ＩＩＩ族窒化物半導体自立基板の製造方法及びＩＩＩ族窒化物半導体層成長用基板例文帳に追加

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE AND SUBSTRATE FOR GROWING GROUP III NITRIDE SEMICONDUCTOR LAYER - 特許庁

ＩＩＩ族窒化物半導体成長用基板、ＩＩＩ族窒化物半導体自立基板、ＩＩＩ族窒化物半導体素子、ならびに、これらの製造方法例文帳に追加

SUBSTRATE FOR GROWING GROUP-III NITRIDE SEMICONDUCTOR, GROUP-III NITRIDE SEMICONDUCTOR DEVICE, FREE-STANDING SUBSTRATE FOR GROUP-III NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING THE SAME - 特許庁

立方晶型窒化物半導体ウェハ及びその製造方法、並びに立方晶型窒化物半導体自立基板の製造方法例文帳に追加

CUBIC CRYSTAL-TYPE NITRIDE SEMICONDUCTOR WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING FREE-STANDING SUBSTRATE OF CUBIC CRYSTAL-TYPE NITRIDE SEMICONDUCTOR - 特許庁

窒化物系化合物半導体結晶の格子定数のばらつきを±１２ｐｐｍ以下として窒化物半導体自立基板を形成する。例文帳に追加

The nitride semiconductor self-standing substrate is composed of a nitride-based compound semiconductor crystal in which the variation of the lattice constant is ±12 ppm or less. - 特許庁

充分な電子デバイス特性が得ることのできる高品質な基板用ＧａＮ系半導体自立基板を提供する。例文帳に追加

To provide a high-quality GaN-based semiconductor self-support substrate for a substrate giving sufficient electronic device characteristics. - 特許庁

低駆動電圧で高い発光出力が得られる発光素子を得るための窒化物半導体自立基板を提供する。例文帳に追加

To provide a nitride semiconductor free-standing substrate for yielding a luminescent element exhibiting a high luminescent power at a low driving voltage. - 特許庁

基板の反りを低減でき、クラック発生を抑制することができるIII族窒化物半導体自立基板を提供する。例文帳に追加

To provide a group III nitride semiconductor self-standing substrate capable of reducing the warping of the substrate and suppressing the occurrence of cracks. - 特許庁

割れやクラックを生じることなく、複数枚の窒化物半導体自立基板を取得可能な構造を有する窒化物半導体結晶を提供する。例文帳に追加

To provide a nitride semiconductor crystal having a structure that allows a plurality of nitride semiconductor self-support substrates to be acquired without inducing cracks. - 特許庁

良好な結晶性と良好な表面平坦性とを兼ね備えた窒化物半導体自立基板とその製造方法を提供する。例文帳に追加

To provide a nitride semiconductor self-supporting substrate having good crystallinity combined with good surface flatness, and its manufacturing method. - 特許庁

自立基板の反りを低減した窒化物半導体自立基板及びそれを用いた発光装置を提供する。例文帳に追加

To provide a nitride semiconductor free-standing substrate whose warpage is reduced, and a light emitter using the same. - 特許庁

下地基板から容易に剥離でき、損傷の低減されたＩＩＩ族窒化物半導体自立基板を提供する。例文帳に追加

To provide a self-supported group III nitride semiconductor substrate which can be easily peeled from a ground substrate and has reduced damage, and to provide a self-supported group III nitride semiconductor substrate having excellent crystallinity and a large area. - 特許庁

自律移動体、自律移動体におけるマップ情報作成方法および自律移動体における移動経路特定方法例文帳に追加

AUTONOMOUS MOBILE BODY, MAP INFORMATION CREATION METHOD IN AUTONOMOUS MOBILE BODY AND MOVING ROUTE SPECIFICATION METHOD IN AUTONOMOUS MOBILE BODY - 特許庁

原料粉末におけるＢｉ２２１２相に対するＢｉ２２２３相の帯磁率の信号強度比が１５／８５以上である。例文帳に追加

The signal strength ratio of susceptibility of the Bi2223 phase to the Bi2212 phase in the raw material powder is 15/85 or more. - 特許庁

本発明に係る窒化物半導体自立基板は、該基板の表面が鏡面であり、前記窒化物半導体自立基板に対するＸ線ロッキングカーブ測定により得られる結果で窒化物半導体結晶の(０００２)面の半値幅が15 sec以上30 sec未満であることを特徴とする。例文帳に追加

This nitride semiconductor self-supporting substrate has a mirror-finished surface of the substrate, and the half-value width of the nitride semiconductor crystal (0002) plane from the result obtained by X-ray rocking curve measurement for the nitride semiconductor self-supporting substrate is 15 sec or more but less than 30 sec. - 特許庁

基材上にエピタキシャル成長させた窒化物半導体層を剥離する窒化物半導体自立基板の製造において、成長させた窒化物半導体層を簡易な方法で容易に剥離させることができ、欠陥の少ない高品質の窒化物半導体自立基板を製造することができる方法を提供する。例文帳に追加

To provide a method capable of easily exfoliating a grown-up nitride semiconductor layer by a simple method and manufacturing a high-quality self-support nitride semiconductor substrate with little defect, in manufacturing a self-support nitride semiconductor substrate by exfoliating a nitride semiconductor layer epitaxially grown up on a base material. - 特許庁

低欠陥密度の窒化物半導体結晶成長用基体、窒化物半導体積層体、及び比較的容易に窒化物半導体層と基板とを脱離できる窒化物半導体自立基板の提供、及び低欠陥密度の窒化物半導体結晶成長用基体、窒化物半導体積層体、及び窒化物半導体自立基板の製造方法の提供。例文帳に追加

To provide a substrate for the growth of a low defect density nitride semiconductor crystal, a nitride semiconductor laminate, and a nitride semiconductor base layer desorption substrate capable of relatively easily releasing a nitride semiconductor layer and the substrate; and to provide manufacturing methods of the substrate for the growth of a low defect density nitride semiconductor crystal, the nitride semiconductor substrate, and the nitride semiconductor base layer desorption substrate. - 特許庁