e GaNとは 意味・読み方・使い方

The main surface of a GaN wafer includes an area (b) to an area (e).例文帳に追加

ＧａＮウエハの主面は、エリア（ｂ）〜エリア（ｅ）を含む。 - 特許庁

A band gap E(15) of the group-III nitride crystal layer 15 is larger than a band gap E(GaN) of the gallium nitride semiconductor layer.例文帳に追加

III族窒化物結晶層１５のバンドギャップＥ（１５）は窒化ガリウム半導体層のバンドギャップＥ（ＧａＮ）より大きい。 - 特許庁

Next, the InN layer 13 formed under the GaN layer 14 is removed by polishing in the process shown in Fig. 1 (e).例文帳に追加

次に、図１（ｅ）に示す工程で、ＧａＮ層１４の下に形成されているＩｎＮ層１３を研磨により除去する。 - 特許庁

Thereafter, the p-type GaN substrate 7 is turned into a thin film so as to be restrained from increasing in resistance and turned to a p-type GaN electrode forming region 8 (Figure 1 (d)), and a p-type electrode 11 and an n-type electrode 12 are formed using evaporation, lithography, and dry etching (Figure 1 (e)).例文帳に追加

その後、抵抗値を抑えるためにｐ型ＧａＮ基板７を薄膜化してｐ型ＧａＮ電極形成領域８とし（図１（ｄ））、ｐ型電極１１およびｎ型電極１２を、蒸着、リソグラフィ、ドライエッチングを用いて形成する（図１（ｅ））。 - 特許庁

The method for producing the self-supporting substrate essentially consists of the step D of forming an intermediate layer comprising a thin ZnO film and a thick GaN film on the intermediate layer on a flat substrate comprising GaN in the given order a plurality of times and the step E of removing the plurality of intermediate layers and separating the substrate from the plurality of thick GaN films.例文帳に追加

ＧａＮからなる平板状の基材の上に、ＺｎＯ薄膜からなる中間層と中間層の上にＧａＮ厚膜を順に複数回形成する工程Ｄと、複数の中間層を除去し、基材と複数のＧａＮ厚膜とを分離する工程Ｅと、を少なくとも具備した自立基板の製造方法。 - 特許庁

When film formation has been completed and the substrate temperature has been lowered to almost the room temperature, manufacture of a p-type GaN based semiconductor 17a and an epitaxial wafer E is completed.例文帳に追加

成膜を完了して、基板温度を室温近傍まで低下させたとき、ｐ型ＧａＮ系半導体１７ａ及びエピタキシャルウエハＥの作製は完了している。 - 特許庁

Then, a ZnO single crystal film 130 is formed, and a treatment for preventing initial nitriding of the surface of the ZnO film 130 (e) is subsequently performed to impart Ga polarity to GaN 140 which grows a single crystal film on the ZnO film 130 (f).例文帳に追加

その後、ＺｎＯ膜１３０の表面の初期窒化を防ぐ処理する（ｅ）ことで、その上に単結晶膜を成長させるＧａＮ１４０の結晶極性をＧａ極性とする（ｆ）。 - 特許庁