spin conversionとは 意味・読み方・使い方

The laminated body is placed on a spin chuck 9 in a chamber 8 of a spin coater apparatus, a portion 2a which is of the photothermal conversion layer 2 and is exposed from the substrate 3, is removed with an alkaline aqueous solution 11, and then, the exposed portion is cleaned by a high-pressure cleaning nozzle 12.例文帳に追加

この積層体をスピンコーター装置のチャンバー８内のスピンチャック９上に載せ、光熱変換層２のうち、被処理基板から露出する部分２ａを、アルカリ性水溶液１１で除去した後、高圧洗浄用ノズル１２で洗浄する。 - 特許庁

By using spin conversion material 14a as the main material of a emission layer 14 which performs excitated state generation, the excitated state is used effectively to assumed composition, in which a luminescent material 14b is doped separately.例文帳に追加

励起状態生成を行う発光層１４の主要材料としてスピン転換材料１４ａを用い、それに発光材料１４ｂを別個に添加した構成をとって励起状態を有効に利用する。 - 特許庁

The spin conversion element is successively provided with a high-coercitivity magnetic layer 2 having magnetization fixed in one direction, an insulating layer 3, and a non-magnetic conductive layer 4 having each conduction electron that is ferromagnetically coupled with the high-coercitivity magnetic layer 2 via the insulating layer 3.例文帳に追加

一方向に固定された磁化を有する高保磁力磁性層２と、絶縁層３と、絶縁層３を介して高保磁力磁性層２と強磁性的結合した伝導電子を有する非磁性の導電層４とを順に備える。 - 特許庁

In recording, current magnetization inverse is used by electric field radiation cathode array by a half metal material, in reproducing, spin arrangement information of metal nano-particles 16 is read out by propagation of a near field light generated through a near field light switching element 17 being nano-processed by a near field light conversion element 18.例文帳に追加

記録はハーフメタル材料による電界放射陰極アレイで電流磁化反転を用い、再生はナノ加工された近接場光交換素子１７を通して発生させた近接場光の伝播で金属ナノ粒子１６のスピン配列情報を近接場光変換素子１８で読み出す。 - 特許庁

The second substrate layer 4 made of NiFeCr or NiCr is made to have (110) orientation of the bcc structure to make crystal grain size of a spin bulb film large and to improve (111) orientation of fcc structure and thereby thermal and magnetic high stability can be obtained, improvement of magnetic conversion characteristic such as high change rate of magnetoresistance and linearity of magnetoresistance change can be attained.例文帳に追加

ＮｉＦｅＣｒ又はＮｉＣｒからなる第２下地層をｂｃｃ構造の（１１０）配向させて、スピンバルブ膜の結晶粒径を大きくし、ｆｃｃ構造の（１１１）配向を向上させるため、熱的・磁気的に高い安定性が得られ、高い磁気抵抗変化率及び磁気抵抗変化の線形性など、磁気変換特性の向上を達成することができる。 - 特許庁