研央の英語

この研磨によってワークの外周縁部は中央部より薄く研磨されるので、両面または片面の研磨装置による二次研磨工程の時に中央部を研磨して外周縁部の厚みに合わせるようにする。例文帳に追加

As the outer peripheral edge part of the work is polished thinner than the central part by this polishing, the central part is polished to match the thickness of the outer peripheral edge part at the time of the secondary polishing process by the polishing device of the both surfaces or the one single surface. - 特許庁

市町村職員中央研究所という,市町村職員の研修機関例文帳に追加

a training and research center for the government employees of nearby cities, towns, and villages発音を聞く  - EDR日英対訳辞書

研磨ドラム４Ａは相対的にウェハ１のエッジの上面側を研磨し、研磨ドラム４Ｂは相対的にウェハ１のエッジの中央を研磨し、研磨ドラム４Ｃは相対的にウェハ１のエッジの下面を研磨する。例文帳に追加

The polishing drum 4A relatively polishes the upper face side of the edge of the wafer 1, the polishing drum 4B relatively polishes the center of the edge of the wafer 1, and the polishing drum 4C relatively polishes the lower face of the edge of the wafer 1. - 特許庁

研磨ドラム４Ａは相対的にウェハ１のエッジの上面側を研磨し、研磨ドラム４Ｂは相対的にウェハ１のエッジの中央を研磨し、研磨ドラム４Ｃは相対的にウェハ１のエッジの下面を研磨する。例文帳に追加

The polishing drum 4A relatively polishes the upper face of the edge of the wafer 1, the polishing drum 4B relatively polishes the center of the edge of the wafer 1, and the polishing drum 4C relatively polishes the lower face of the edge of the wafer 1. - 特許庁

支持板２上における中央領域に第１研磨パッド４ａを配し、中央領域を包囲する外周領域に、第１研磨パッド４ａよりも研磨スラリーに対する保持性が低い第２研磨パッド４ｂを配する。例文帳に追加

A first grinding pad 4a is disposed in a center area on a supporting plate 2, and a second grinding pad 4b with the holding property of the grinding slurry lower than that of the first grinding pad 4a is disposed on an outer circumferential area surrounding the center area. - 特許庁

研磨時の基板中央付近へのスラリー保持量を増加させることにより、基板中央部の研磨不足を解消し、基板研磨量の面内均一性を向上させた研磨クロス、それを備えたＣＭＰ装置及びＣＭＰ研磨方法を提供する。例文帳に追加

To provide a polishing cloth, a CMP apparatus provided with the same and a CMP method in which in-plane uniformity of a wafer polishing quantity is improved by eliminating lack of polishing in a middle portion of the wafer by increasing a quantity of slurries to be held near the middle of the wafer during polishing. - 特許庁

中央部に貫通孔が形成された磁気記録媒体用ガラス基板の端面を研磨する場合に、外周端面の研磨工程を第１研磨工程と第２研磨工程に分け、第１研磨工程と第２研磨工程の研磨条件を変える。例文帳に追加

When an end face of a glass substrate for a magnetic recording medium having a through hole formed at the center is subjected to polishing, the polishing step of the circumferential end face comprises a first polishing step and a second polishing step, in which the polishing conditions are varied between the first polishing step and the second polishing step. - 特許庁

つまり、被研磨物の中央部とそれ以外では、研磨レートが大きく異なるが、被研磨物の中央部に接触する第２領域２４の硬さを高め、被研磨物の中央部に接触しない第１領域２３および第３領域２５の硬さを低くすることによって、被研磨物全面において研磨レートを均一にすることができる。例文帳に追加

Though the polishing rate at the central part of the workpiece is largely different from the other part, the polishing rate can be made to be uniform in the whole surface of the workpiece by increasing the hardness of a second area 24 contacting the workpiece and decreasing the hardness of a first area 23 and a third area 25 not contacting the central part of the workpiece. - 特許庁