《略》 Coefficient of Thermal Expansionの英語

The film electrode has a coefficient of thermal expansion that substantially matches the coefficient of thermal expansion of the underlying base substrate layer as well as the coefficient of thermal expansion of the protective coating film layer.例文帳に追加

フィルム電極の熱膨張係数は、下側のベース基板層の熱膨張係数及び保護コーティング層の熱膨張係数と略合致する。 - 特許庁

A first layer 31 in the sub-mount 30 has approximately the same coefficient of thermal expansion as the LD bar 10 in copper tungsten (CuW) or the like, and a second layer 32 has approximately the same coefficient of thermal expansion as the heat sink 20 in copper (Cu) or the like.例文帳に追加

サブマウント３０の第１層３１は、銅タングステン（ＣｕＷ）など、ＬＤバー１０に略等しい熱膨張係数とし、第２層３２は、銅（Ｃｕ）など、ヒートシンク２０に略等しい熱膨張係数とする。 - 特許庁

Then, a thermal expansion suppressing member H1310 of a thermal expansion coefficient nearly equal to that of a second plate H1400 is bonded to a rear face of the electric wiring tape H1300, thereby reducing the trouble because of the thermal expansion.例文帳に追加

そこで、第２のプレートＨ１４００と熱膨張係数の略等しい熱膨張抑制部材Ｈ１３１０を電気配線テープＨ１３００の裏面に接着し、熱膨張によるトラブルを低減する。 - 特許庁

A thermal expansion coefficient of the polycarbonate filled with 20% of the glass fiber is brought into a value substantially same to a thermal expansion coefficient of aluminum that is a material of the housing 13.例文帳に追加

ガラスファイバーが２０％充填されたポリカーボネイトの熱膨張係数は、ハウジング１３の材質であるアルミニウムの熱膨張係数と略同一の値とされている。 - 特許庁

An insulating substrate of the flexible circuit substrate includes: a first region with its thermal expansion coefficient approximately identical to that of a metal conductor; and a second region with its thermal expansion coefficient different from that of the first region.例文帳に追加

フレキシブル回路基板の絶縁性基板は、熱膨張係数が金属導体と略同一の第１の領域と、熱膨張係数が第１の領域と異なる第２の領域とを有する。 - 特許庁

A heat spreader 10 comprises a radiation section 11 that is formed nearly in a square flat plate shape by copper having a high thermal coefficient of expansion, and a frame section 12 that is formed in a square frame shape by an invar having a low thermal coefficient of expansion.例文帳に追加

ヒートスプレッダー１０は、高熱伝導率の銅によって略四角平板状に形成された放熱部１１と、低熱膨張率のインバーによって四角枠状に形成された枠部１２とからなる。 - 特許庁

A DC voltage is applied for a prescribed period in a state to heat the n-type silicon wafer 1' at a temperature higher than the temperature of the glass substrate 10' in such a manner that the thermal deformation of the n-type silicon wafer 1' having small thermal expansion coefficient becomes nearly equal to the thermal deformation of the glass substrate 10' having large thermal expansion coefficient.例文帳に追加

熱膨張係数の小さなｎ形シリコンウェハ１’と熱膨張係数の大きなガラス基板１０’との熱変位が略等しくなる程度に、ｎ形シリコンウェハ１’の温度がガラス基板１０’の温度よりも高くなるように加熱した状態で直流電圧を所定時間だけ印加する。 - 特許庁