I‐V characteristicの英語

The I-V characteristic of a sample D whose electron mobility is by three times larger than that of the sample C, and whose dislocation density is at 1/3 or less is not different from that of the sample C.例文帳に追加

試料Ｃよりも電子移動度が３倍大きく、転位密度が１／３以下の試料ＤのＩ−Ｖ特性は試料Ｃと変わらない。 - 特許庁

The I-V characteristic (d) of the cell to be analyzed in a state of distinction is assumed by a curve obtained by the voltage value of the characteristic (c) from the voltage value of the characteristic (b) with respect to the same current value.例文帳に追加

当該被解析対象セルの減光した状態でのＩ−Ｖ特性ｄは、同一電流値について特性ｂの電圧値から特性ｃの電圧値を減じた曲線にて推定される。 - 特許庁

Accordingly, even when the increasing rate of the I/V value of the TFD by the annealing process at the center area of the initial circuit board 200 is small, the I/V characteristic does not fluctuate since a thick insulating film is formed to the first metal layer 222 formed in such a region.例文帳に追加

従って、元基板２００の中心領域でのアニール処理によるＴＦＤのＩ／Ｖ値のアップ度合いが小さい場合でも、このような領域に形成されている第１金属層２２２には厚い絶縁層が形成されるので、Ｉ／Ｖ特性がばらつかない。 - 特許庁

"A (short-circuited) I-V characteristic (c) of the cell other than the cells to be analyzed from the module" is approximated by characteristics of (n-1)/n times a voltage value of the characteristic (a).例文帳に追加

「モジュールから当該被解析対象セルを除いた（短絡した）Ｉ−Ｖ特性ｃ」を、特性ａの電圧値を（ｎ−１）／ｎ倍した特性で近似する。 - 特許庁

Ni Schottky contacts are formed on four kinds of n-GaN wafers whose electron mobilities are different, and their I-V characteristic is measured at room temperature.例文帳に追加

電子移動度の異なる４種類のｎ−ＧａＮウエハにＮｉショットキー接触を形成し、室温でＩ−Ｖ測定行った結果によれば、電子移動度１００ｃｍ^２／Ｖｓ以下の試料Ａ，ＢのＩ−Ｖ特性は漏れ電流が大きい。 - 特許庁

To provide a technique for accurately, generically creating a current-voltage curve (I-V curve) under arbitrary insolation intensity and solar cell temperature conditions based on characteristic values of a solar cell.例文帳に追加

太陽電池の特性値から、任意の日射強度・太陽電池温度条件の電圧—電流カーブ（Ｉ−Ｖカーブ）の正確かつ汎用的な作成技術を提供する。 - 特許庁

To provide a superconducting junction using a high temperature superconductor, which permits evaluation of junction characteristics based on I/V characteristic and the reduction of a substrate region, and a method for manufacturing the superconducting junction.例文帳に追加

本発明は、Ｉ−Ｖ特性に基づく接合特性の評価と基板面積の縮小化が可能な高温超電導体を用いた超電導接合及びその製造方法を提供することを課題とする。 - 特許庁

To provide a method capable of creating an accurate and general-purpose voltage-current curve (I-V curve) under arbitrary conditions of solar radiation intensity and temperature using characteristic values of a solar cell and further, a method of accurately and appropriately evaluating an amount of generated power of a photovoltaic power generation system.例文帳に追加

太陽電池の特性値を使い、任意の日射強度・温度条件における正確かつ汎用的な電圧—電流カーブ（Ｉ−Ｖカーブ）の作成ができ、さらに、太陽光発電システムの発電量を正確・的確に評価できる方法を提供する。 - 特許庁