impurity atomsとは 意味・読み方・使い方

In addition, the concentration of surface impurity in the region 13 is 1.0×10^19 atoms/cm^3 or more and 5.0×10^19 atoms/cm^3 or less.例文帳に追加

また、抵抗素子領域１３の表面不純物濃度が１.０×１０^１９atoms/cm^３以上５.０×１０^１９atoms/cm^３以下となっている。 - 特許庁

A semiconductor substrate is equipped with a first semiconductor and a second semiconductor formed over the first semiconductor, the second semiconductor having either an impurity which exhibits P-type conductivity or first-impurity atoms which exhibit N-type conductivity and further having second-impurity atoms which bring the Fermi level of the second semiconductor having the first-impurity atoms near to the Fermi level of the second semiconductor having no first-impurity atoms.例文帳に追加

第１半導体と、第１半導体の上方に形成された第２半導体とを備え、第２半導体は、Ｐ型の伝導型を示す不純物またはＮ型の伝導型を示す第１不純物原子と、第２半導体が第１不純物原子を有する場合のフェルミ準位を、第２半導体が第１不純物原子を有しない場合のフェルミ準位に近づける第２不純物原子とを有する半導体基板を提供する。 - 特許庁

Impurity density of the surface of the wafer may be 1×10^11 atoms/cm^2 or less.例文帳に追加

また、当該ウェハの表面の不純物密度を１×１０^11ａｔｏｍｓ／ｃｍ^2以下とすればよい。 - 特許庁

this causes the amount of impurity atoms in the p-type clad layer 25 to be increased, making the carrier concentration high.例文帳に追加

こうして、ｐ型クラッド層２５の不純物原子のドープ量を多くしてキャリア濃度を高くする。 - 特許庁

The Si layer 14 comprises an n-type Si layer with the concentration of an n-type impurity of about 7×10^18 atoms cm^-3, and a p-type Si layer with the concentration of a p-type impurity of about 2×10^17 atoms cm^-3 which is formed on the n-type Si layer.例文帳に追加

Ｓｉ層１４は、ｎ型不純物濃度が７ｘ１０^18atoms・cm^-3程度のｎ型Ｓｉ層と、ｎ型Ｓｉ層の上に形成され、ｐ型不純物濃度が２ｘ１０^17atoms・cm^-3程度のｐ型Ｓｉ層とからなる。 - 特許庁

A composition ratio of Al atoms of the semiconductor forming the impurity diffusion controlling region 13 is larger than that of Al atoms of the p^+-type semiconductor region 14.例文帳に追加

不純物拡散抑制領域１３を構成する半導体のＡｌ原子の組成比は、ｐ^＋型の半導体領域１４のＡｌ原子の組成比よりも大きい - 特許庁

The concentration of the first conductivity type impurity contained in the drift layer is not lower than 1×10^16(atoms/cm^3).例文帳に追加

ドリフト層に含まれる第１導電型の不純物濃度は、１×１０^１６（ａｔｏｍｓ／ｃｍ^３）以上である。 - 特許庁

The method for manufacturing the silicon carbide semiconductor element comprise the steps of generating silicon(Si) holes near an impurity ion implanted region, and reducing Si interstitial atoms.例文帳に追加

不純物イオン注入領域近傍にシリコン（Ｓｉ）空孔を生成させ、Ｓｉ格子間原子を減少させる。 - 特許庁