segregation coefficientとは 意味・読み方・使い方

For instance, for the boron, as it has a small segregation coefficient, the concentration in the vicinity of the surface decreases by an oxidation.例文帳に追加

例えばホウ素の場合、偏析係数が小さいので、酸化によって表面近くの濃度が減少する。 - 特許庁

This is because the segregation coefficient of arsenic at the interface between a silicon film 4 and the oxide film 3 is small.例文帳に追加

その後、前記多結晶シリコン膜に偏析係数がリンのそれより小さいｎ型半導体をイオン注入する。 - 特許庁

To improve the reliability of a gate insulating film while voidance of a gate electrode prevented, by providing a gate electrode with a lower part region where only phosphorus is introduced as impurity and an upper part region where phosphorus and n-type semiconductor whose segregation coefficient is smaller than it are introduced as impurities.例文帳に追加

ゲート絶縁膜の信頼性を向上させることができると共に、ゲート電極の空乏化を防止することができる電界効果トランジスタ及びその製造方法を提供する。 - 特許庁

The silicon crystal is doped with a dopant which determines a conductivity type and an auxiliary dopant whose conductivity type has a polarity opposite to that of the main dopant and whose segregation coefficient is not more than that of the main dopant.例文帳に追加

導電型を規定する主ドーパントと、該主ドーパントとは導電型が反対の極性を有し且つ主ドーパントの偏析係数以下の偏析係数を有する副ドーパントとが添加されてなるシリコン結晶。 - 特許庁

A concentration distribution of the impurity varies in the vicinity of the surface of the substrate at the time of oxidation according to a size of a segregation coefficient of the impurity, a diffusion speed in an Si and an SiO_2 of the impurity, or the like, in an Si-SiO_2 interface.例文帳に追加

Ｓｉ−ＳｉＯ_2界面においては、不純物の偏析係数、不純物のＳｉ及びＳｉＯ_2中の拡散速度の大小等によって、酸化時に基板表面近くで不純物の濃度分布が変化する。 - 特許庁

To provide a silicon crystal of which the change in resistivity in a longitudinal direction may be decreased even when a dopant with a small segregation coefficient is added and of which the production cost may be reduced by enhancing its yield, provide a silicon crystal wafer, and provide a method for producing the silicon crystal.例文帳に追加

偏析係数の小さなドーパントを添加しても、シリコン結晶インゴットの長さ方向における抵抗率の変化を小さくでき、収率を高くして製造コストを低減できるシリコン結晶及びシリコン結晶ウエーハ並びにその製造方法を提供する。 - 特許庁

To make apparent segregation coefficient large with a simple means, to make the specific resistance of a silicon single crystal uniform and to improve the yield so as to obtain a silicon wafer having a desired specific resistance in the longitudinal direction of a p-type rod-shaped silicon single crystal obtained by doping boron as a main dopant.例文帳に追加

ボロンを主添加剤とするｐ型の棒状シリコン単結晶の長さ方向に所要の比抵抗値を有するシリコンウェーハを得るため、できるだけ簡便な手段で見かけの偏析係数を大きくして、シリコン単結晶の比抵抗値を均一にして歩留りを向上させる。 - 特許庁