「plasma oxidation process」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

That is, a HD plasma oxidation process is performed, produces reactive oxygen species, removes Si-C couplings of the SiC substrate, and forms free atoms Si and C on the SiC substrate.例文帳に追加

つまり、ＨＤプラズマ酸化プロセスは実行され、反応酸素種を生成し、ＳｉＣ基板のＳｉ—Ｃ結合をはずし、ＳｉＣ基板に遊離原子ＳｉおよびＣを形成する。 - 特許庁

A plasma process in which a gas including fluorine and oxygen gas are introduced is performed to a conductive metal film embedded in the cracks between the wirings or such conductive metal film is dissolved and removed by oxidation thereof with an oxidation agent solution and then using chemical solutions for selectively removing the oxide.例文帳に追加

配線間の亀裂に埋め込まれた導電性金属膜をフッ素含有ガスおよび酸素ガスを導入したプラズマ処理、若しくは酸化剤溶液により酸化し、酸化物を選択的に除去する薬液を用いて、溶解除去を行う。 - 特許庁

A method for manufacturing a multi-layer circuit wiring board laminating the film having a conductor layer with an adhesive comprises a process for heat-processing the surface of the film in a non-oxidation gas phase atmosphere in preferably residual oxygen concentration of 0.5 % or less, a process for performing plasma treatment, and a process for laminating by the adhesive.例文帳に追加

導体層を有するフィルムを接着剤により積層する多層回路配線板の製造方法において、少なくとも、フィルム表面を好ましくは残留酸素濃度０．５％以下の非酸化性気相雰囲気中で熱処理する工程、プラズマ処理を行う工程、接着剤により積層する工程、を具備する。 - 特許庁

This manufacturing method of reformed graphite for a nonaqueous electrolyte secondary battery comprises: an oxidation treatment process for forming oxidized graphite by oxidatively treating material graphite; and a hydrogen plasma treatment process for forming reformed graphite having an expansion coefficient of 1.1 to 1.4 with respect to the material graphite by heat-treating the oxidized graphite in a hydrogen plasma atmosphere at 1,000-2,800°C.例文帳に追加

原料黒鉛を酸化処理して酸化黒鉛となす酸化処理工程と、酸化黒鉛を、１０００℃以上２８００℃以下の水素プラズマ雰囲気中で熱処理して、原料黒鉛に対する膨張率が１.１以上、１.４以下である改質黒鉛となす水素プラズマ処理工程と、を備える非水電解質二次電池用改質黒鉛の製造方法。 - 特許庁

In the pretreatment process, RPH (Remote Plasma Hydrogenation) treatment for supplying hydrogen radical onto a substrate is performed (202), RPN (Remote Plasma Nitriding) treatment for supplying nitrogen radical onto the substrate is performed (203), and then RPO (Remote Plasma Oxidation) treatment for supplying oxygen radical onto the substrate is performed (204) in the middle of substrate temperature increment for increasing a substrate temperature to a depositing one.例文帳に追加

前処理工程は、基板温度を成膜温度まで昇温させる基板昇温の途中で、水素ラジカルを基板上に供給するＲＰＨ（リモートプラズマ水素化）処理を行い（２０２）、その後、窒素ラジカルを基板上に供給するＲＰＮ（リモートプラズマ窒化）処理を行い（２０３）、その後、酸素ラジカルを基板上に供給するＲＰＯ（リモートプラズマ酸化）処理を行う（２０４）。 - 特許庁

In the process A, a film-forming material is supplied (202) to allow inorganic starting gas to attach to the substrate being unreacted during the heating of the substrate up to a film-forming temperature, and an oxygen radical is supplied to the substrate for performing (203) RPO (remote plasma oxidation) treatment to form the first film layer thereon.例文帳に追加

第１薄膜層形成工程Ａは、基板温度を成膜温度まで昇温させる基板昇温加熱の途中で、有機原料ガスを基板上に未反応のまま付着させる成膜原料供給を行なった後（２０２）、酸素ラジカルを基板上に供給して第１の薄膜層を形成するＲＰＯ（リモートプラズマ酸化）処理を行なう（２０３）。 - 特許庁

In order to remove a germanium (Ge) contaminant stuck in a manufacturing process of a semiconductor device, a treatment is performed using a solution containing hafnium (HF) after a treatment using an oxidative solution such as an ammonia-hydrogen peroxide solution (APM), hydrochloric acid-hydrogen peroxide solution (HPM), sulfuric acid-hydrogen peroxide solution (SPM), and aqua regia or oxidation treatment such as oxidative plasma treatment.例文帳に追加

半導体デバイス製造過程において付着したゲルマニウム（Ｇｅ）汚染物を除去するために、酸化力を有する溶液、例えば、アンモニア−過酸化水素水（ＡＰＭ），塩酸−過酸化水素水（ＨＰＭ）、硫酸−過酸化水素水（ＳＰＭ）、王水等による処理、もしくは、酸素プラズマ処理等の酸化処理に連続して、弗酸（ＨＦ）含有水溶液による処理を行なう。 - 特許庁