引上げ速度の英語

次いで引上げ機と同型機により過去に引上げた際に得られた、無欠陥となるインゴットの引上げ速度Ｖ及び温度分布Ｇの比Ｃ＝Ｖ／Ｇの経験値と、上記プログラムを用いて算出した温度分布Ｇとからインゴットの引上げ速度Ｖを決定する。例文帳に追加

Then, the pulling speed V of the ingot is determined from an experience value of the ratio C=V/G of the pulling speed V of a defect-free ingot to the temperature distribution G, obtained when ingots were pulled by using the same machine as the pulling machine 10 in past times, and from the temperature distribution G calculated by using the above mentioned programs. - 特許庁

この固液界面の高さを制御するために、単結晶棒の引上げ速度、単結晶棒の回転速度、ルツボ２の回転速度、磁場の強度を制御しながら、単結晶棒の引上げを行う。例文帳に追加

The single crystal rod is pulled up while controlling pulling up speed of the single crystal rod, rotating speed of the single crystal rod, rotating speed of the crucible 2, and intensity of magnetic field. - 特許庁

予め設定した引上げ速度に従って単結晶の引上げを実施した後、その引上げにおける結晶変形率の実績値と目標値との偏差を求める。例文帳に追加

Then, a single crystal is pulled at a pulling rate previously determined and the deviation of a practical deformation degree of a crystal obtained by the pulling from the target value is calculated. - 特許庁

ＣＺ法による単結晶の引上げにおいて、結晶変形率を目標値に制御し、且つgrown-in欠陥の密度を上限値以下に抑制しつつ、可及的に速い引上げ速度で安定な引上げを行う。例文帳に追加

To stably pull a single crystal at a high pulling speed while controlling the deformation degree of the single crystal to a target value and suppressing the density of grow-in defects to be not more than an upper limit value when the single crystal is pulled by a CZ method. - 特許庁

また引上げ機構４による引上げ速度Ｖを調整するとともに、クーラの冷却量を調整して、前記Ｇ１を大きくさせた状態で、Ｖ／Ｇ１を臨界値近傍まで低下させて、シリコン結晶が引上げ成長される。例文帳に追加

The silicon wafer is pulled up and grown by lowering V/Gi down near to the critical value in the state of increasing G1 by regulating the pull-up speed V by means of the pull-up mechanism 4 and by regulating the rate of cooling of the cooler. - 特許庁

次に引上げ速度Ｖでインゴットを引上げ、この引上げ中に概略測定した一部の炉内部材の劣化量に対する温度勾配Ｇの変化量を上記プログラムを用いて概略予測する。例文帳に追加

Thereafter, ingots are pulled at a pulling speed V, and the change amount of the temperature gradient G to the deterioration amount of some members in the furnace, approximately measured during pulling, is approximately estimated by using the above mentioned programs. - 特許庁

結晶中心部にＯＳＦが生じはじめる結晶引上げ速度をＶ_0 として、Ｖ_0 を超える定常速度で結晶育成を行う。例文帳に追加

When a pulling-up speed at which OSF begins to occur at the center part of the crystal is defined as Vo, the crystal is grown at a stationary speed higher than the speed Vo. - 特許庁

また、単結晶１１の引上げの妨げにならないよう、単結晶引上げ速度と同じ速度で単結晶１１と共に、熱遮蔽板５４が引き上げられるようにした。例文帳に追加

The heat shielding plate 54 is lifted together with the single crystal 11 at a speed equal to the single crystal pulling speed to prevent the hindrance to the pulling operation of the single crystal. - 特許庁