electrode interfacesとは 意味・読み方・使い方

When the deviation is large, it is determined that the adhesion on the interfaces of the catalyst layer with the electrolyte membrane of the membrane electrode assembly is poor (a solid line B).例文帳に追加

一方、乖離が大きい場合には、膜電極接合体の触媒層と電解質膜の界面の密着性が悪いと判定する（実線Ｂ）。 - 特許庁

According to such a configuration, when an electric field is generated between the pixel electrode 20 and the linear part 22E of the common electrode 22, the stored amounts of charge charged on the interfaces A, B on the linear part 22E are substantially equal to the stored amount of charge charged on the interfaces D, E on the slit part 22S, respectively.例文帳に追加

この構成により、画素電極２０と共通電極２２の線状部２２Ｅとの間に電界を生じさせた場合、線状部２２Ｅ上の各界面Ａ，Ｂに帯電する電荷の蓄積量と、スリット部２２Ｓの各界面Ｄ，Ｅに帯電する蓄積量とは略等しくなる。 - 特許庁

When an electric field is generated between the pixel electrode 20 and the linear portion 22E of the common electrode 22 in this constitution, the accumulation amount of electric charges accumulated on the respective interfaces A, B and C of the linear portion 22E is nearly equal to that on the respective interfaces D, E and F of the slit portion 22S.例文帳に追加

この構成により、画素電極２０と共通電極２２の線状部２２Ｅとの間に電界を生じさせた場合、線状部２２Ｅ上の各界面Ａ，Ｂ，Ｃに帯電する電荷の蓄積量と、スリット部２２Ｓの各界面Ｄ，Ｅ，Ｆに帯電する蓄積量とは略等しくなる。 - 特許庁

According to such a configuration, when an electric field is generated between the pixel electrode 20 and the linear part 22E of the common electrode 22, the stored amount of charge charged on the interfaces A, B, C on the linear part 22E are substantially equal to the stored amounts of charge charged on the interfaces D, E, F on the slit part 22S, respectively.例文帳に追加

この構成により、画素電極２０と共通電極２２の線状部２２Ｅとの間に電界を生じさせた場合、線状部２２Ｅ上の各界面Ａ，Ｂ，Ｃに帯電する電荷の蓄積量と、スリット部２２Ｓの各界面Ｄ，Ｅ，Ｆに帯電する蓄積量とは略等しくなる。 - 特許庁

To provide a highly reliable semiconductor device, in which the occur rence of disconnections in the junction interfaces between junctions and IC electrode sections and between the junctions and substrate electrode sections is reduced by reinforcing the jointing strengths between the junctions and elec trode sections in the interfaces.例文帳に追加

接合部およびＩＣ電極部と、接合部および基板電極部の間の接合界面における両者の接合強度を補強し、これらの接合界面で断線しにくい、信頼性の高い半導体装置を提供することを目的とする。 - 特許庁

A compound layer 115 resulting from alloying a material of the p-side electrode 114 and respective semiconductor layer materials is formed at interfaces of respective semiconductor layers in contact with the p-side electrode 114.例文帳に追加

ｐ側電極１１４と接する各々の半導体層の界面に、ｐ側電極１１４の材料と各々の半導体層材料とが合金化した化合物層１１５を形成する。 - 特許庁

To provide a method and device for evaluating a membrane electrode assembly capable of determining the quality of the adhesion on the interfaces of an electrolyte membrane with a catalyst layer of the membrane electrode assembly.例文帳に追加

膜電極接合体の電解質膜と触媒層の界面の密着性の良否を判定することが可能な膜電極接合体の評価方法及び評価装置を提供する。 - 特許庁