六角錘の英語

サファイア基板１０上に、Ｍｇドープの第１のＧａＮバッファ層１１を、１０^6／ｃｍ^2程度の密度を持つ六角錘台形晶の成長核の密集層として形成する。例文帳に追加

A first Mg-doped GaN buffer layer 11 is formed as a highly dense layer of growth nucleus of truncated six-sided pyramid crystals having a density of about 10^6/cm^2, on a sapphire substrate 10. - 特許庁

ＬＥＤチップ１０を、六角錘状の透明錐体３よりもＬＥＤ薄膜部２が実装基板４０に近くなる形で実装基板４０に実装してある。例文帳に追加

An LED chip 10 is packaged on a packaging substrate 40 so that an LED thin-film section 2 is closer to the packaging substrate 40 than a transparent pyramid 3 in a hexagonal weight shape. - 特許庁

前記フレーム３０は前記取水管７０の基部７５に向かって狭まる六角錘台形状の骨組構造であり中央部に取水管７０を前記フレーム３０へ取り付ける取付手段５０を備える。例文帳に追加

The frame 30 is a hexagonal truncate framework structure narrowing toward a base section 75 of the intake pipe 70 and is equipped with a mounting means 50 for mounting the intake pipe 70 to the frame 30 on the central part. - 特許庁

透光性基台３は、各ＬＥＤチップ１それぞれの錐体１１が各別に挿入され各錐体１１を位置決めする複数の六角錘状の位置決め凹所３１が基板２に対向する上記一表面に形成されている。例文帳に追加

The light-transmissive base 3 has a plurality of positioning recessed parts 31 in a hexagonal pyramid shape to position each pyramid 11, into which pyramids 11 of the respective LED chips 1 are inserted individually to be positioned, formed on the one surface opposed to the substrate. - 特許庁

吸着コレット３０は、六角錘状の錐体１１を有するチップたるＬＥＤチップ１０を吸着するためのチップ吸着用凹所３１が先端部に形成され、チップ吸着用凹所３１に連通する真空吸着孔３２が形成されている。例文帳に追加

A collet chuck 30 is provided, at the distal end thereof, with a recess 31 into which an LED chip 10, i.e., a chip having a cone 11 of hexagonal prism, is sucked and further provided with a vacuum suction hole 32 which communicates with the recess 31. - 特許庁

ＬＥＤチップ１０は、ＬＥＤ薄膜部１２、カソード電極１８およびアノード電極１７が六角錘状の透明基体１１の下面１１ａ側に形成され、当該透明基体１１よりもＬＥＤ薄膜部１２が実装基板２０に近くなる形で実装されている。例文帳に追加

In the LED chip 10, an LED thin-film section 12 and cathode and anode electrodes 18, 17 are formed at the side of a lower surface 11a of a transparent substrate 11 of a hexagonal weight shape, and the LED thin-film section 12 is closer to the packaging substrate 20 than the transparent substrate 11 for packaging. - 特許庁

次に金属板１１の裏面側の配線パターン相当部分に第２のマスキング１５を形成し、この第２のマスキング１５の上からハーフエッチング処理して断面略六角形の紡錘型の金属バンプ１１Ｄを形成する。例文帳に追加

Then, second masking films 15 are formed on the wiring pattern corresponding part of the rear surface of the metal plate 11, and the metal plate 11 is subjected to half etching from above the second masking films 15 so as to form spindle-shaped metal bumps 11D that are nearly hexagonal in cross sections. - 特許庁

床材等を解体撤去して露出させた地盤１８を掘削して形成した柱穴２０の底部２４を浄化還元した後、セラミックス及び炭素体を用いて基礎層３０を形成して礎石２８を配置し、この礎石上に先端部２６Ａを六角錘状に削った地中柱２６を立てる。例文帳に追加

After the cleanup and reduction of a bottom part 24 of a column hole 290 formed by excavating the ground 18 exposed by breaking up and removing flooring or the like, a foundation layer 30 is formed using ceramics and carbon, to dispose a foundation stone 28, and an underground column 26 with its tip part 26A cut in hexagonal pyramid shape is erected on the foundation stone. - 特許庁