成長双晶の英語

シリコン結晶体成形装置は、坩堝底部を冷やす方式で多結晶結晶粒の成長方向をコントロールし、該結晶粒に双晶境界を成形する。例文帳に追加

The silicon crystal forming apparatus controls the growing direction of polycrystalline crystal grains by a system of cooling the bottom part of a crucible, and forms twin boundaries at the crystal grains. - 特許庁

InP単結晶を成長させる際に、多結晶や双晶などの欠陥が発生するのを抑制し、単結晶化率を高め、歩留まりが高いInP単結晶の製造方法を提供する。例文帳に追加

To provide a process for producing an InP single crystal of a high yield by suppressing the generation defects, such as polycrystals and twins, when growing the InP single crystal, thereby enhancing a single crystallization rate. - 特許庁

縦型ボード法によってＧａＡｓなどの半導体単結晶を成長させる際に、ポリ結晶や双晶の発生率を低減して、歩留まりの低下を防止できる半導体単結晶の製造方法を提供する。例文帳に追加

To provide a method of producing a semiconductor single crystal, by which the ratio of generation of polycrystal or twin crystal is reduced and lowering of the yield can be prevented when the semiconductor single crystal such as GaAs is grown by a vertical board method. - 特許庁

金属基板上にＬＰＣＶＤ法により結晶性シリコン領域を形成すると、｛１１１｝面を双晶面とし、＜１１０＞方向、もしくは＜２１１＞方向に成長する多結晶体よりなるウィスカ状結晶性シリコンが得られる。例文帳に追加

A crystalline silicon region is formed over a metal substrate by an LPCVD method, whereby whisker-like crystalline silicon consisting of a polycrystalline body which grows in the <110> direction or the <211> direction by letting {111} plane be a twin crystal plane can be obtained. - 特許庁

エピタキシャル成長以外の付加的な工程を必要とせず、かつエピタキシャル成長させた結晶内に生じる反位相領域境界面や双晶のような面欠陥を低減し得る化合物半導体結晶基材及びその製造方法を提供すること。例文帳に追加

To provide a compound semiconductor crystal base material which is produced by an epitaxial growth process without requiring an additional process and reduces planar defects such as anti-phase area boundary planes or twins, which are formed in the epitaxially grown crystal, and to provide a method for producing the same. - 特許庁

種結晶を用いず融液表面から垂直方向に徐々に固化させる結晶成長法であって、多結晶、双晶のない単結晶を歩留まりよく生産できる化合物半導体単結晶の製造方法を提供する。例文帳に追加

To provide a method producing a compound semiconductor single crystal, which comprises growing a crystal by gradually solidifying in the vertical direction from the surface of a melt without using a seed crystal and by which the single crystal free from a polycrystal and a twin crystal can be produced with a good yield. - 特許庁

Ａｌ電極層４は、エピタキシャル成長した配向膜であり、かつＸ線回折極点図において観察される回折パターンが複数の対称中心を有する双晶構造を持つ多結晶薄膜となるようにされる。例文帳に追加

The Al electrode layer 4 is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers. - 特許庁

半導体薄膜のレーザ結晶化の際に、ドットパターン段差を一定間隔で配置した位相シフタを使い、エネルギ光の光軸の中心近傍に単一の成長性の結晶核を発生させ、放射状に横方向成長させることで、内部に双晶粒界のみを含む実質的に単一の大粒径結晶粒のアレイを作製する。例文帳に追加

At the time of crystallizing a thin semiconductor film with a laser beam, an array of a substantially single crystal grain having a large diameter and only containing a twin crystal grain boundary is created by generating a single growing crystal nucleus near the center of the optical axis of energy light by using a phase shifter, in which dot-pattern steps are arranged at fixed intervals and radially growing the crystal nucleus in the lateral direction. - 特許庁