液空間速度の英語

各圧電素子に供給される駆動信号は、メイン液滴及びサテライト液滴が孤立飛行空間だけ飛行した後に合一するように、サテライト液滴がノズルから切断される際に同サテライト液滴のノズル側の切断点の速度をメイン液滴の速度よりも高くするように設定される。例文帳に追加

A driving signal supplied to each piezoelectric element is set so that the speed of a cutting point in the nozzle side of the satellite droplets in the cutting of the satellite droplets from the nozzle is made higher than the speed of main droplets to unite the main droplet and the satellite droplets with each other after the main droplets and the satellite droplet fly only by an isolated flight space. - 特許庁

この触媒の存在下、水素分圧３〜８ＭＰａ、温度３００〜４２０℃、液空間速度０．３〜５ｈｒ^−１で、減圧蒸留軽油留分を接触反応する。例文帳に追加

In the presence of the catalyst, the vacuum-distilled gas oil fraction is catalylically reacted under 3-8MPa hydrogen partial pressure, at temperatures of 300-420°C and 0.3-5/h liquid space velocity. - 特許庁

上記触媒の存在下、水素分圧３〜８ＭＰａ、３００〜４２０℃、液空間速度０．３〜５ｈｒ^−１で、硫黄分を含む軽油留分の接触反応を行う。例文帳に追加

The contact reaction of the light oil fraction which contains sulfur is performed in the presence of the catalyst under a hydrogen partial pressure of 3-8 MPa, at 300-420°C, at a liquid space velocity of 0.3-5 hr-1. - 特許庁

この触媒の存在下、水素分圧３〜８ＭＰａ、３００〜４２０℃、液空間速度０．３〜５ｈｒ^−１で、硫黄分を含む軽油留分の接触反応を行う。例文帳に追加

A sulfur-containing gas oil fraction is subjected to a catalytic reaction in the presence of the catalyst under conditions including a hydrogen partial pressure of 3-8 MPa, a temperature of 300-420°C and a liquid hourly space velocity of 0.3-5 hr-. - 特許庁

本発明の方法は、８０〜２２０℃の温度、１〜１０ｈ^−１の液空間速度、０．５〜５ＭＰａの圧力で供給材料を触媒と接触させることからなる。例文帳に追加

The method of selective hydrogenation using the catalyst with controlled porosity comprises a step of bringing a supplied material into contact with the catalyst at the temperature of 80-220°C at the liquid space velocity of 1-10 h^-1 under the pressure of 0.5-5 MPa. - 特許庁

上処理空間４１が、ウエハＷの中心から周縁部に向かうにつれて徐々に狭くなっているので、ウエハＷの上面の全域において、処理液の速度がほぼ等しい。例文帳に追加

Since the upper treatment space 41 becomes gradually narrower from the center of the wafer W to the periphery, the speed of the treatment liquid is nearly equal in the entire region of the upper surface of the wafer W. - 特許庁

本発明の方法は、８０〜２２０℃の温度、１〜１０ｈ^−１の液空間速度および０．５〜５ＭＰａの圧力で供給材料を触媒と接触させることからなる。例文帳に追加

The method according to the present invention comprises bringing a feed material into contact with a catalyst at a temperature of 80 to 220°C, a liquid hourly space velocity of 1 to 10 h^-1 and pressure of 0.5 to 5 MPa. - 特許庁

塗布液膜の周縁部の上方を覆うようなカバーを設けて、塗布液膜の周縁部において局所的に溶媒蒸気が滞留する空間を作り、この空間の大きさを乾燥中に制御させることによって、塗布液膜周縁部での蒸発速度を調節し、塗布液膜内の濃度分布を均一にすることで周縁部の膜厚不均一を抑制する。例文帳に追加

A cover which covers above the peripheral part of the coating liquid film is provided to form a space where solvent vapor locally stays in the peripheral part of the coating liquid film; the evaporation rate in the coating liquid film peripheral part is adjusted by controlling a size of the space during drying; and the film thickness ununiformity of the peripheral part is controlled by evening up the concentration distribution in the coating liquid film. - 特許庁