結晶学方位の英語

透過電子顕微鏡のゴニオメ−タを利用した隣り合う結晶粒の結晶学的方位関係測定装置及びそれによる結晶粒界の特性の糾明方法例文帳に追加

APPARATUS FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIP OF ADJACENT CRYSTAL GRAINS USING GONIOMETER OF TRANSMISSION ELECTRON MICROSCOPE, AND METHOD OF EXAMINING CHARACTERISTICS OF GRAIN BOUNDARY USING THE SAME - 特許庁

立方晶系単結晶材料により形成された光学部材（３１）の熱処理などに際して、この光学部材の結晶方位＜１００＞と光学部材の光軸（Ｏ）とをほぼ一致させた状態で光学部材を保持する。例文帳に追加

The optical member is retained in the state that the crystal orientation (100) of the optical member is allowed to coincide with an optical axis O of the optical member upon the heat treatment etc. of the optical member 31 formed by the cubic single crystal substance. - 特許庁

次に、この単結晶インゴットを（１００）面方位に平行に切断して、（１００）面方位の紫外線光学素子の素材２を得る。例文帳に追加

Subsequently, the single-crystal ingot is so cut in parallel with the (100) face azimuth as to obtain the raw material 2 of an ultraviolet-ray optical element having the (100) face azimuth. - 特許庁

光学的な視認性に優れ、結晶軸の方位を示す特異な形態をもつドットマーク群を有する半導体ウェハと同ドットマーク群による結晶軸の方位特定方法を提供する。例文帳に追加

To provide a semiconductor wafer having a group of dotted marks, which are superior in optical visibility and have a peculiar form to show the orientation of the crystal axis of the wafer, and to provide a specifying method for the orientation of the crystal axis using the group of the dotted marks. - 特許庁

サブバウンダリーによって区画された複数のサブグレインを有し、隣接する前記サブグレインの結晶面方位の相対傾斜角が０．０２度以内、且つ、前記サブグレインの結晶面方位の最大傾斜角が０．２度以内のフッ化物単結晶を光学素子材料に用いる。例文帳に追加

The fluoride single crystal having a plurality of subgrains partitioned by subboundaries, wherein the relative inclination angle of the crystal face orientation of the adjacent subgrain is ≤0.02° and the maximum inclination angle of the crystal face orientation of the subgrain is within 0.2°, is used for an optical element material. - 特許庁

フッ化物結晶からなる光リソグラフィー用光学部材の評価方法において、光学部材の結晶面方位を測定する工程と、測定の結果に基づいて双晶の領域を特定する工程とを有する構成とする。例文帳に追加

A method of evaluating an optical member for photolithography composed of the fluoride crystal includes a step of measuring the crystal plane orientation of the optical member, and a step of specifying a twin crystal area based on the results of the measurement. - 特許庁

窒化インジウム（InN）を基とするIn_1-(x+y)Ga_xAl_yN薄膜を成長させる単結晶基板は、stillwellite型構造を持つ三方晶系に属する化学式REBGeO_5（REは希土類元素）で標記される単結晶からなり、結晶学的方位{0001}を基板面とする。例文帳に追加

The single crystal substrate for growing a thin film of In_1-(x+y)Ga_xAl_yN being based on indium nitride (InN) consists of a single crystal represented by chemical formula of REBGeO_5 (where RE represents a rare earth element) that belongs to a trigonal system having a stillwellite structure, and has a substrate face in a crystallographic orientation {0001}. - 特許庁

光学調整工程は、結晶透過部材を光軸廻りに微小角度だけ回転させる微小角度回転工程や、光学的に等価な別の結晶軸方位関係になるように結晶透過部材を光軸廻りに所定角度だけ回転させる所定角度回転工程を含む。例文帳に追加

The optical adjustment step comprises a step of turning the crystalline permeable member about the optical axis only through a small angle, or a step of turning the crystalline permeable member about the optical axis through a predetermined angle so as to establish another optically equivalent crystal orientation relationship. - 特許庁