被膜生成率の英語

被膜生成に必要な電気量を抑制し初回充放電効率を高める。例文帳に追加

To enhance initial charge/discharge efficiency by suppressing an electricity amount necessary for the formation of a coating film. - 特許庁

被膜生成に必要な電気量を抑制し初回充放電効率を高める。例文帳に追加

To raise a first-time charge/discharge efficiency by suppressing quantity of electricity required for a coat formation. - 特許庁

透明被膜がニオブ系酸化物微粒子を含んでいるために高屈折率で、耐候性、耐光性、基材との密着性、耐擦傷性、スクラッチ強度、鉛筆硬度等に優れ、さらには干渉縞が生成しない透明被膜付基材を提供する。例文帳に追加

To provide a substrate with a transparent coating having a high index of refraction since the transparent coating contains a niobium oxide fine particle, superior in weathering resistance, light resistance, adherence to the substrate, abrasion resistance, scratch strength, pencil hardness and the like, and further creating no interference fringe. - 特許庁

ＣＶＤ法に伴う反応で微粒子を生成させ、これを被膜内に混在させることにより、表面に凹凸を有する薄膜付きガラス板を効率的に製造する。例文帳に追加

To efficiently manufacture a glass plate with thin film having ruggedness on its surface by generating fine particles by a reaction accompanied by the CVD method and including the particles in the coating film. - 特許庁

第１の電解質塩により負極２２に被膜が生成され、第２の電解質塩により高いイオン伝導率が得られると共に、４−フルオロエチレンカーボネートにより正極２１で起こる電解液の酸化分解反応が抑制される。例文帳に追加

A film is produced on the negative electrode 22 by the first electrolyte salt and a high ionic conductivity is obtained by the second electrolyte salt 22, and furthermore, oxidative degradation reaction of the electrolyte solution brought about at the positive electrode 21 is suppressed by 4-fluoroethylene carbonate. - 特許庁

光を用いたＣＶＤ法による半導体製造装置におけるウエハに生成される被膜の固体間の膜厚品質を安定させ、かつ面内膜厚均一性を改善することによって生産効率の優れた半導体製造装置を実現する。例文帳に追加

To attain a semiconductor manufacturing apparatus of excellent production efficiency by stabilizing the film thickness quality among films formed on individual wafers and improving intra-wafer film-thickness uniformity in the semiconductor manufacturing apparatus in which a CVD method using light is applied. - 特許庁

光を用いたＣＶＤ法による半導体製造装置におけるウエハに生成される被膜の固体間の膜厚品質を安定させ、かつ面内膜厚均一性を改善することによって生産効率の優れた半導体製造装置を実現する。例文帳に追加

To obtain an apparatus for manufacturing a semiconductor having superior production efficiency by controlling variations in film thickness qualities of films formed on wafers and improving film thickness uniformity in the plane in the apparatus for manufacturing the semiconductor by using a CVD method with light. - 特許庁