スピン依存散乱の英語

このため、スピン偏極ホットエレクトロン２７は、第２の強磁性障壁層６の伝導帯を伝導できず、ベース２２とコレクタ２３との界面においてスピン依存散乱又は反射を受けてエネルギーを失う。例文帳に追加

Consequently, the spin-polarized hot electrons 27 can not conduct in the conduction band of the second ferromagnetic barrier layer 6, thereby losing their energies in the interface between the base 22 and a collector 23 by spin-dependent scatterings or reflections. - 特許庁

スピンバルブ型素子において、磁化固着層（１６）あるいは磁化自由層（２０）の非磁性中間層（１８）側にスピン依存界面散乱が大きい材料からなる界面挿入層（３２、３４）を挿入する。例文帳に追加

In a spin valve type element, an interface insertion layer (32 or 34), made of material with large spin dependent interface scattering, is inserted at a magnetized fixed layer (16) or a magnetized free layer (20) on the side of a nonmagnetic intermediate layer (18). - 特許庁

スピン依存散乱効果を有効に利用しながら、適当な抵抗値を有し、高感度化が可能で、かつ制御すべき磁性体層の数が少ない、実用的な磁気抵抗効果素子を提供することができる。例文帳に追加

Through effectively using a spin-dependent scattering effect, a practical magnetoresistance effect element is formed, which has an appropriate resistance value, high sensitivity, and a small number of magnetic materials to be controlled. - 特許庁

さらに、下部および上部界面磁性層３８，４８はＣｏＦｅＮｉを主成分とするので、スピン依存界面散乱が増加し、磁気抵抗変化量ΔＲＡがさらに増加する。例文帳に追加

Furthermore, the lower and upper interface magnetic layers 38 and 48 are constituted of CoFeNi as main components, spin dependence interface distribution is increased, and the magnetic resistance variation ΔRA is further increased. - 特許庁

また、Ｃｏ_２Ｍｎ（Ｇｅ_１−ｘＳｎ_ｘ）合金が非磁性材料層に拡散しにくくなり、フリー磁性層又は固定磁性層と非磁性材料層の界面におけるスピン依存界面散乱係数γが向上する。例文帳に追加

Furthermore, the Co_2Mn(Ge_1-xSn_x) alloy is hard to disperse in a nonmagnetic material layer, for improved spin-dependent interface dispersion coefficient γ at the interface between the free magnetic layer or fixed magnetic layer and the nonmagnetic material layer. - 特許庁

反強磁性層と固定層の交換結合磁界が低下することなく、スピン依存散乱を十分に得ることができ、従来よりもＧＭＲ効果が高い磁気抵抗効果型素子および磁気抵抗効果型ヘッドを提供する。例文帳に追加

To provide a magnetoresistive effect element and a magnetoresistive effect head which can sufficiently obtain spin dependent scattering without lowering an exchange coupling magnetic field between a diamagnetic layer and a fixed layer and has higher GMR effect than usual. - 特許庁

また、非磁性中間層と接しない側の界面に、非磁性背面層（３６）を挿入すると、磁化固着層／非磁性背面層界面あるいは磁化自由層／非磁性背面層界面でのスピン依存界面散乱を利用することができ、出力が増大する。例文帳に追加

In addition, when a nonmagnetic back face layer (36) is inserted in an interface on the side which is not in contact with the nonmagnetic intermediate layer, a spin-dependent interface scattering at an interface of magnetized fixed layer/nonmagnetic back face layer or at an interface of magnetized free layer/nonmagnetic back face layer is available, and the output can be increased. - 特許庁

磁気検出素子の多層膜Ｔ１の多層膜上流部Ａと多層膜下流部Ｂのスピンバルク依存散乱量を非対称にして、多層膜上流部Ａの磁気抵抗変化量×素子面積ΔＲＡを多層膜下流部ＢのΔＲＡよりも小さくする。例文帳に追加

The quantity of a spin bulk dependent scattering of a multilayer film upstream part A and a multilayer film downstream part B of a multilayer film T1 of the magnetic detecting element is asymmetric, and a magnetic resistance variation×an element area ΔRA of the multilayer film upstream part A is made smaller than a ΔRA of the multilayer film downstream part B. - 特許庁