添加物濃度の英語

血中インスリン濃度測定用添加剤組成物及びそれを含む採血管例文帳に追加

ADDITION AGENT COMPOSITION FOR MEASURING INSULIN CONCENTRATION IN BLOOD AND BLOOD COLLECTING TUBE INCLUDING THE SAME - 特許庁

（ｂ）半導体基板にレーザビームを照射して、相対的に浅い領域に添加された高濃度不純物は、高濃度不純物の添加領域よりも深い位置まで、半導体基板を溶融させて活性化させ、相対的に深い領域に添加された低濃度不純物は、半導体基板を、低濃度不純物の添加領域まで溶融させることなく活性化させる。例文帳に追加

(b) The semiconductor substrate is irradiated with a laser beam so that the high concentration impurities added to a relatively shallow region melt and activate the semiconductor substrate down to a position deeper than the region where the high concentration impurities are added, and the low concentration impurities added to a relatively deep region activate the semiconductor substrate, without melting, down to the region where the low concentration impurities are added. - 特許庁

０．０００１−１００ｐｐｂの濃度で飲食物に添加し、苦味又は酸味を低減する。例文帳に追加

The taste improver can reduce the bitterness and the acidity by adding the 3- methylnonane-2,4-dione in a proportion of 0.0001-100 ppb to the food and drink. - 特許庁

溶融シリカ物品に亘る水素濃度が所定の濃度範囲内にあるように、所定の温度で表面領域に水素を再添加する。例文帳に追加

The surface region is reloaded with hydrogen at a predetermined temperature so that the hydrogen concentration throughout the article is within a predetermined concentration range. - 特許庁

最大平均濃度および最小濃度を有する所定の濃度範囲内にある水素濃度を添加する方法を、幅広い厚さの溶融シリカ物品に同時に行う。例文帳に追加

To perform a method simultaneously on fused silica articles having thicknesses of a wide range, the method which loads hydrogen by a hydrogen concentration within a specified concentration range having a maximum average concentration and a minimum concentration. - 特許庁

石鹸の実添加量が上記適正添加量となるように調整した上で、被処理水中の窒素化合物の濃度が目標濃度になるまで窒素化合物を除去する。例文帳に追加

The actual addition amount of the soap is regulated to become the adequate addition amount, and then, the nitrogen compounds are removed until the concentration of the nitrogen compounds in the water to be treated becomes a target concentration. - 特許庁

（ａ）表層部の相対的に深い領域に、相対的に低濃度で不純物が添加され、相対的に浅い領域に、相対的に高濃度で不純物が添加されている半導体基板を準備する。例文帳に追加

(a) A semiconductor substrate in which impurities are added, at a relatively low concentration, to a relatively deep region of a surface layer, and added, at a relatively high concentration, to a relatively shallow region is prepared. - 特許庁

ソース電極８ｓおよびドレイン電極８ｄにそれぞれ接する高濃度不純物添加シリコン膜６ｓ，６ｄと、多結晶シリコン膜４との間に、無添加または低濃度（１００ｐｐｍ以下）不純物添加水素化非晶質シリコン層５ｓ，５ｄを化学気相成長法により形成する。例文帳に追加

Between the highly doped silicon films 6s and 6d which are in contact with a source electrode 8s and a drain electrode 8d, respectively, and the polycrystalline silicon film 4, non-doped or lightly doped (100 ppm or less) hydrogenated amorphous silicon layers 5s and 5d are formed by a chemical vapor deposition method. - 特許庁