臨界欠陥の英語

次に、この膜を超臨界状態の二酸化炭素に曝すと、電荷や欠陥部あるいは不純物は、吸着された水と共に除去される。例文帳に追加

Then, if the films are exposed to the supercritical state carbon dioxide, the charges, the defects, or the impurities are removed with the adsorbed moisture. - 特許庁

高い臨界電流値を有し、膨れなどの欠陥がなく、さらに機械的強度の高い超電導線材を提供する。例文帳に追加

To provide a superconducting wire rod, which has a high critical current, has no defects, such as blistering or the like, and also has a high mechanical strength. - 特許庁

酸化膜耐圧特性に悪影響を及ぼす臨界サイズ以下の微細なベイカンシ欠陥を除去し、半径方向に均一なベイカンシ欠陥密度及び分布を有するシリコン単結晶インゴットを製造すること。例文帳に追加

To manufacture a single crystal silicon ingot having homogeneous vacancy defect density and distribution in a radial direction by removing minute vacancy defects not larger than a critical size that adversely affects the voltage-resistance characteristics of an oxide film. - 特許庁

電子コンポーネント製造中、それに関連する半導体ウェハ領域内の凝集した空格子点欠陥を、その領域内のサイズが臨界サイズを超えないよう収縮させる。例文帳に追加

During the manufacture of an electronic component, the defects accumulated by vacant lattice points in the region of a semiconductor are made to shrink to have the size in the region not exceeding the critical size. - 特許庁

１以上の欠陥を含む結晶及び反応条件下で超臨界流体となる適当な圧力媒体を用意し、結晶及び圧力媒体を高圧セル内に入れ、高圧セルを高圧装置内に置き、単結晶中の欠陥又は歪みを除去するのに十分な高い圧力及び温度の反応条件下で十分な長さの時間処理する。例文帳に追加

A crystal containing one or more defects and an appropriate pressure medium becoming supercritical fluid under a reaction condition are prepared, and the crystal and the pressure medium are placed in a high pressure cell, and the crystal is treated for a sufficiently long time at the reaction condition of high pressure and temperature for removing the defect or the strain in the crystal. - 特許庁

臨界温度よりも高い高温（常温）状態で物体１内での超電導体の状況（超電導体の存在割合や欠陥率など）を検査し、この高温状態での検査結果に基いて物体１の超電導特性を評価する。例文帳に追加

The state of the superconductor (the presence ratio or flaw ratio of the superconductor) in the matter 1 is inspected in a high temperature (normal temperature) state higher than a critical temperature and the superconductive characteristics of the matter are evaluated on the basis of the inspection result in this high temperature state. - 特許庁

単結晶引き上げ中、引き上げ速度Ｖと成長フロントにおける軸線方向温度勾配Ｇとの比Ｖ／Ｇを、臨界サイズを超えた大きさの凝集した空格子欠陥が単結晶中に生成されるようコントロールする。例文帳に追加

While forming the single crystal, the ratio V/G, where V is the velocity for drawing and G is a temperature gradient along an axial direction at a growing front, is controlled so that the defects accumulated by vacant lattice points with the size greater than the critical size can be generated. - 特許庁