thick film integrated circuitとは 意味・読み方・使い方

For increasing the storage capacitance of a capacitor produced in a semiconductor integrated circuit device, storage electrodes 14 with a thick thickness and metal wirings 15 in a peripheral circuit region are doubled with a conductive film which is made of the same metal material and prepared in the same layer as both the storage electrode 14 and the metal wirings 15.例文帳に追加

キャパシタの蓄積容量を増加するために厚さの厚い蓄積電極１４と周辺回路部の金属配線１５を同一層内に設けた同一金属材料の導電膜で兼用する。 - 特許庁

To efficiently resolve a breach of delay limitations of wiring by using actively a wiring layer with a low resistance having a thick film in a design method for semiconductor integrated circuit using a wiring layer with multilayer.例文帳に追加

多層配線層を用いる半導体集積回路の設計方法において、膜厚の厚い低抵抗な配線層を積極利用して、配線の遅延制約違反を効率的に解消する。 - 特許庁

A first insulating resin film 14 is formed thick, breakdown voltage characteristic is improved, by mixing a filler the heat of a heater element is transmitted satisfactorily to a hybrid integrated circuit board 11.例文帳に追加

第１の絶縁樹脂膜１４を厚く形成し、耐電圧特性の向上を改善し、且つフィラーの混入により発熱素子の熱を良好に混成集積回路基板１１に伝えられる様にした。 - 特許庁

A flat magnetic induction element 11 is formed via an IC protection film 2 on a silicon substrate 1 wherein a semiconductor integrated circuit device is formed and a thick ferrite magnetic plate 8 is formed on the upper surface of a thin film coil 6 of the flat magnetic induction element 11 via an upper insulation film 7.例文帳に追加

半導体集積回路装置を形成したシリコン基板１上にＩＣ保護膜２を介して平面型磁性誘導素子１１を形成し、この平面型磁性誘導素子１１の薄膜コイル６の上面に上部絶縁膜７を介して厚いフェライト磁性板８を形成する。 - 特許庁

In this semiconductor integrated circuit device including a capacitive element formed with an MISFET, a capacitive element C_1 in an analog PLL circuit wherein the leakage current becomes a problem is formed with a p-channel type MISFET using a thick gate oxide film (9B).例文帳に追加

ＭＩＳＦＥＴで構成された容量素子を有する半導体集積回路装置において、リーク電流が問題となるアナログＰＬＬ回路内の容量素子Ｃ_１は、厚いゲート酸化膜（９Ｂ）を使ったｐチャネル型ＭＩＳＦＥＴで構成する。 - 特許庁

To obtain the wiring board which can tightly be joined to a substrate of a protection glass, a resistance body, a Cu plating layer, and a wiring conductor for a ceramic insulating substrate and suitable to a hybrid integrated circuit board equipped with a reliable thick-film resistance body layer.例文帳に追加

セラミック絶縁基板に対して保護ガラス−抵抗体−Ｃｕめっき層−配線導体の基板に対して強固な接合が得られ、信頼性の高い厚膜抵抗体層を具備した混成集積回路基板に適した配線基板を得る。 - 特許庁

A hybrid integrated circuit device consists of an insulated substrate 10, a thick film circuit 25 formed on a substrate which has the copper conductive films 21 and 22 made by baking the copper conductive pastes 21A and 22A where organic metals have been added to metal powders, and electronic components 38 soldered on the copper conductive films by solders 35 and 36.例文帳に追加

混成集積回路装置は、絶縁性の基板１０と、基板上に形成され銅粉末に有機金属を添加した銅導体ペースト２１Ａ及び２２Ａを焼成して成る銅導体膜２１及び２２とを含む厚膜回路基板２５と、銅導体膜上にはんだ３５及び３６によりはんだ付けされた電子部品３８とから成る。 - 特許庁

In the light-emitting device 1 wherein the light-emitting element 6 and a lighting control circuit 7 are arranged on a metal base FPC 5 formed by making a flexible printed (FPC) board 8 formed by integrating copper foil patterns 9 (conductors) with a film integrated with a flexible metal base 12, an end of the metal base FPC 5 is formed as a thick-walled terminal.例文帳に追加

銅箔パターン９（導電体）をフィルムに一体化して形成したフレキシブルプリント（ＦＰＣ）基板８を可撓性を有する金属製ベース１２に更に一体化することによって形成したメタルベースＦＰＣ５に発光素子６と点灯制御回路７を設けた照明装置１であって、メタルベースＦＰＣ５の端部を厚肉状の端子部として形成した。 - 特許庁