割れ成長の英語

炭化珪素単結晶成長において、成長空間領域を均熱に保ち、炭化珪素単結晶の割れを防止することができる製造装置および製造方法を提供する。例文帳に追加

To provide a method and an apparatus for producing the silicon carbide single crystal preventing a silicon carbide single crystal from cracking while keeping a growth space region in a uniformly heated state, in the growth of the silicon carbide single crystal. - 特許庁

鏡面塗装体に部品を取り付けるなどのために加工を行い、塗膜に微細な割れが発生しても、割れが一定域を超えて成長するのを防止する。例文帳に追加

To prevent the growth of crack outside a fixed area even when fine cracks occurs on a coating film by performing processing for attaching components to a mirror coated body. - 特許庁

フェライト系ステンレス鋼の溶接における問題である、溶接金属の結晶組織が巨大に成長することを抑え、溶接時の割れと、応力が繰り返し加わることにより生じる割れが防げる溶接部を実現すること。例文帳に追加

To realize a weld zone in which the huge growth of the crystal structure of weld metal which is a problem in welding for ferritic stainless steel is suppressed, and cracks at the time of welding and cracks caused by the repeated application of stress can be prevented. - 特許庁

気相成長中の半導体基板の外周縁のキズを低減することで割れを防止し、さらには、半導体基板の偏心を抑制することで、成長させる単結晶薄膜の膜厚分布の悪化を防止できる気相成長用サセプタ及びそれを用いた気相成長方法を提供する。例文帳に追加

To provide a susceptor for vapor phase growth, which can prevent film thickness distribution of a single crystal thin film to grow from becoming deteriorated by preventing a crack with the reduction of injuries around outer periphery of a semiconductor substrate which is growing in a vapor phase and further by suppressing eccentricity of the semiconductor substrate, and to provide a method for vapor phase growth using the same. - 特許庁

加工時の割れや欠け、クラック、チップの発生を低減すると共に、エピタキシャル成長時に懸念される前記ティアドロップと共にエピタキシャル成長面のマイクロラフネスをも低減が可能なシリコンウェーハが得られるシリコン単結晶の切断方法。例文帳に追加

To provide a method for slicing single crystal of silicon capable of providing a silicon wafer which can reduce generation of cracking and chipping during the slicing, and reduce not only tear drop suspected during the epitaxial growth and micro-roughness of an epitaxial growth surface. - 特許庁

フローチャネル内壁への堆積物付着によるフローチャネルの割れを防止すると共に、結晶基板上に原料ガスを効率よく供給できる化合物半導体結晶気相成長方法及び気相成長装置を提供する。例文帳に追加

To provide a method of growing a compound semiconductor crystal in a vapor phase, by which the formation of cracks in a flow channel caused by the sticking of deposits on the inner wall of the flow channel can be prevented and a gaseous raw material can be supplied efficiently onto a crystal substrate. - 特許庁

３回回転対称性を有する半導体成長用基板において、切断方向を明示し、基板の切断を容易化し、チッピングや割れなどの不具合が無く、半導体装置を効率的に製造することが出来る半導体成長用基板を提供する。例文帳に追加

To provide a substrate for growing semiconductor, wherein its cutting directions are so indicated distinctly as to facilitate the cutting of the substrate, and faults such as chipping and cracks are eliminated, and further, semiconductor devices can be manufactured efficiently, with respect to the substrate for growing semiconductor having threefold rotational symmetry. - 特許庁

短辺側鋳型銅板11・11のテーパー率TR[%/m]を明瞭な判断基準で適正値に導けると共に、凝固シェルの均一成長を促して鋳片割れや割れ起因のブレークアウトを防止できる、中炭素鋼の連続鋳造方法を提供する。例文帳に追加

To provide a continuous casting method for medium carbon steel where the taper ratio TR [%/m] of short side mold copper plates 11, 11 can be introduced into a proper value on a clear judgement standard, and further, the uniform growth of a solidified shell is promoted, so as to prevent a slab crack and breakout caused by the crack. - 特許庁