USGとは 意味・読み方・使い方

A undoped silicate glass(USG) film 26 is made to cover aluminum wiring 24 arranged on a field oxide film 22, and an organic SOG(spin-on- glass) layer 28 which is apt to be thick is made in the recess on the surface of the USG layer 26.例文帳に追加

フィールド酸化膜２２上に配置されたアルミ配線２４を覆うようにＵＳＧ層２６を形成し、ＵＳＧ層２６の表面の凹部に、厚肉を形成しやすい有機ＳＯＧ層２８を形成する。 - 特許庁

An electronic circuit component is formed on a semiconductor substrate 11, and a thin film resistor 14 is formed on a USG film 13 on the surface of the component.例文帳に追加

半導体基板１１に電子回路を構成する素子を形成し、その表面上のＵＳＧ膜１３上に薄膜抵抗体１４を形成する。 - 特許庁

Then, the USG film 7 and LTO film 8 are polished through a CMP method until the surface of the silicon nitride film 3 is exposed.例文帳に追加

次に、シリコン窒化膜３表面が露出するまで、ＵＳＧ膜７及びＬＴＯ膜８をＣＭＰ法を用いて研磨する。 - 特許庁

Then, after the photoresist pattern 4 is removed, a USG film 7 and an LTO film 8 are successively deposited so as to fill up the groove 5.例文帳に追加

次に、フォトレジストパターン４を除去した後、溝５を埋設するように、ＵＳＧ膜７及びＬＴＯ膜８を順次堆積する。 - 特許庁

The laminate ML1 is provided with a lower selection gate LSG, and the laminate ML3 is provided with an upper selection gate USG.例文帳に追加

積層体ＭＬ１には下部選択ゲートＬＳＧを設け、積層体ＭＬ３には上部選択ゲートＵＳＧを設ける。 - 特許庁

The GOJ was represented by State Secretary forForeign Affairs Mr.Chiaki Takahashi and senior officials from METI and theCabinet Office and the USG was represented by Deputy Administrator forProtection and National Preparedness for FEMA Mr.Timothy Manning, as well asofficials from the Department of State and the United States Agency forInternational Development.例文帳に追加

本会合は、東日本大震災後、被災地で開催された初の政府系国際会議である。 - 経済産業省

To provide a low temperature wet etching method for a highly insulated thin layer which is advantageous for manufacturing a highly insulated gate insulating layer of a CMOS, an insulating film of a highly insulated capacitor of a DRAM, and the like and solves a problem of forming ruggedness over silicon in an active area or over USG in an isolate block.例文帳に追加

CMOSの高絶縁性ゲート絶縁層やDRAMの高絶縁性コンデンサの絶縁膜製造に有利で且つアクティブエリアのシリコンや隔離区のUSGに凹凸を形成する問題を解決するべく高絶縁性薄層の低温ウェットエッチング法を提供する。 - 特許庁

In the manufacturing method of a semiconductor device for forming the USG film 5 on a semiconductor substrate 1 on which an n+-type active region 2 and a p+-type active region 3 are formed, an oxide film 4 is formed on the surface of the substrate 1 and the USG film 5 is formed on the oxide film 4.例文帳に追加

Ｎ＋型活性領域２およびＰ＋型活性領域３が形成された半導体基板１上にＵＳＧ膜５を形成する半導体装置の製造方法において、半導体基板１の表面に酸化膜４を形成し、酸化膜４の上にＵＳＧ膜５を形成する。 - 特許庁