アクセプタ濃度の英語

基板１１は、溶解酸素濃度が８×１０^１７（ａｔｏｍｓ／ｃｍ^３）以下で、アクセプタあるいはドナーとなる不純物濃度が１×１０^１５（ａｔｏｍｓ／ｃｍ^３）以下である。例文帳に追加

A substrate 11 has the dissolved oxygen concentration which is not higher than 8×10^17(atoms/cm^3) and the impurity concentration which is to become an acceptor or a donor is not higher than 1×10^15(atoms/cm^3). - 特許庁

ゲート酸化膜４５直下のｐベース領域４２の表面層に、実効的なアクセプタ濃度が１×１０^13〜１×１０^16ｃｍ^-3と内部より低濃度のｐ^- チャネル領域５０を設ける。例文帳に追加

A p--channel area 50 with an effective concentration of acceptor of 1×1013-1×1016 cm-3 which is lower than that of the inside is provided on the surface layer of a p base area 42 just beneath a gate oxide film 45. - 特許庁

ｐ型ＭｇＺｎＯ薄膜１は、アクセプタとなるｐ型不純物の窒素が約５．０×１０^１８ｃｍ^−３以上の濃度で含まれている。例文帳に追加

In the p-type MgZnO-based thin film 1, nitrogen as a p-type impurity, which serves as an acceptor, is contained in a concentration of not less than about 5.0×10^18 cm^-3. - 特許庁

水溶液Ｗの製造方法は、ドナー性分子とアクセプタ性分子との会合体が分散した水溶液を粒子径が１μｍ以下になるよう微粒子化する工程と、水溶液が０．１％体積濃度以上５０％体積濃度以下となるようにアクセプタ性材料を添加する工程と、を有する。例文帳に追加

The manufacturing method of the aqueous solution W comprises a process of pulverizing aqueous solution with associated bodies of donor molecules and acceptor molecules dispersed into fine particles with a particle size of 1 μm or less, and a process of adding an acceptor material so as the solution to have not less than 0.1% and not more than 50% volume concentration. - 特許庁

光照射前の開放電圧の極大値に対して、０．８５〜０．９９倍になるように、ｐ型半導体のアクセプタ不純物濃度を設定しても良い。例文帳に追加

The acceptor impurity concentration of the p-type semiconductor can be set so that the open voltage before the irradiation of light can be set so as to be 0.85-0.99 times as large as the maximum value of the open voltage before the irradiation of light. - 特許庁

ｐ型ボディ領域２２のチャネル領域２９におけるアクセプタ濃度Ｎ_ａは１×１０^１６ｃｍ^−３以上２×１０^１８ｃｍ^−３以下である。例文帳に追加

The acceptor concentration N_a in the channel region 29 of the p-type body region 22 is no fewer than 1×10^16 cm^-3 nor more than 2×10^18 cm^-3. - 特許庁

或いは、水溶液Ｗ２の製造方法は、ドナー性分子とアクセプタ性分子との会合体が分散した水溶液にアクセプタ性材料を添加して０．１％体積濃度以上５０％体積濃度以下の水溶液を得る工程と、水溶液を粒子径が１μｍ以下になるよう微粒子化する工程と、を有する。例文帳に追加

Or, the manufacturing method of the aqueous solution W2 comprises a process of obtaining aqueous solution with a volume concentration of 0.1% or more and 50% or less by adding an acceptor material to aqueous solution with associated bodies of the donor molecules and acceptor molecules dispersed, and a process of pulverizing the solution into fine particles with a particle size of 1 μm or less. - 特許庁

窒化ガリウムエピタキシャル膜１３が１×１０^１６ｃｍ^−３以下のドナー濃度及び３×１０^１５ｃｍ^−３以下のアクセプタ濃度を有するので、窒化ガリウムエピタキシャル膜１３における補償が低く、窒化ガリウムエピタキシャル膜に１×１０^１６ｃｍ^−３以下のキャリア濃度が提供される。例文帳に追加

The gallium nitride epitaxial film 13 has a donor concentration which is not more than 1×10^16 cm^-3 and an acceptor concentration which is not more than 3×10^15 cm^-3, so that the compensation in the gallium nitride epitaxial film 13 is low and a carrier concentration which is not more than 1×10^16 cm^-3 is provided in the gallium nitride epitaxial film. - 特許庁