自己ドーピングの英語

Mercaptoetanol、Decanethiol、Thioxyreol、Calix[6]arenethiol、4-Poly(propylene oxide)-calix[6]arenethiolおよび4-N-isopropylacrylamide-Calix[6]arenethiol等のチオール化合物の自己集合膜が表面に形成されている銅金属粒子等の遷移金属粒子を、ポリピロール等の電解重合膜にドーピングする。例文帳に追加

Transition metal particles such as copper metal particles on the surface of which a self-assembly film of a thiol compound such as Mercaptoethanol, Decanethiol, Thioxylenol, Calix[6]arenethiol, 4-Poly(propylene oxide)-calix[6]arenethiol and 4-N-isopropylacrylamide-Calix[6]arenethiol is formed are doped into an electrolytic polymerization film of a polypyrrole or the like. - 特許庁

本発明は、基板を照射方向に対して３０°〜６０°傾けてドーピングを行い、ゲート電極と重なる低濃度不純物領域（Ｌｏｖ）を自己整合的に形成してＧＯＬＤ構造を備えたＴＦＴを作製することを特徴とする。例文帳に追加

A substrate is doped being inclined by 30-60° with respect to a direction of irradiation to form a self-aligned impurity region (Lov) of low concentration that overlaps a gate electrode, and thus to form a TFT having a GOLD (gate-drain overlapped lightly doped drain) structure. - 特許庁

自己整合的にＬＤＤ構造を形成可能とし、ドーピング領域の長さを制御できると共に、過飽和な水素原子の注入に伴う特性の不安定化を抑制できる半導体装置の製造方法、半導体装置、電気光学装置用基板、電気光学装置、及び電子機器を提供する。例文帳に追加

To provide a manufacturing method capable of forming an LDD structure in a self-alignment way, controlling the length of a doping region, and suppressing the instability of a characteristic attended with the implantation of supersaturated hydrogen atoms, and to provide a semiconductor device, a board for an electrooptical device, the electrooptical device, and an electronic apparatus. - 特許庁

また、オフセット領域或いはＬＤＤ領域を形成する際のドーピングマスクとして、金属膜のドライエッチング時にパターン側壁部に自己整合的に形成される反応生成物、或いは厚い絶縁膜の異方性エッチングを行った時に自己整合的に形成される側壁絶縁膜を用いる。例文帳に追加

Moreover, a reaction product formed in a pattern sidewall part in self-alignment in dry etching of a metal film or a sidewall insulation film formed in self-alignment in an isotropic etching of a thick insulation film is used as a doping mask in the formation of an offset region or an LDD region. - 特許庁

ＡｌとＮの複合体形成の方が、Ａｌ単独ドーピングに伴う自己補償に比べてエネルギー利得が大きくなるため、ＺｎＳ結晶中でｎ型ドーパントが安定化し、自己補償の抑制効果やｎ型ドーパントの濃度増大効果が生まれ、キャリア濃度増大と共に安定したＺｎＳ薄膜の低抵抗化が可能になる。例文帳に追加

As the compound material of Al and N gives a larger energy gain compared to the self-compensation by Al single doping, the n-dopant is stabilized in the ZnS crystal, inducing an effect of suppressing the self-compensation and an effect of increasing the n-dopant concentration, which results in an increase in the carrier concentration and low resistance of the stable ZnS thin film. - 特許庁