rapid thin layerとは 意味・読み方・使い方

In this manufacturing method, a rapid thermally oxidized porous polysilicon layer 6 is formed on the surface side of an n-type silicon board 1 as a conductive board, and a gold thin film 7 of a metallic thin film is formed on the quick thermally oxidized porous polysilicon layer 6.例文帳に追加

導電性基板たるｎ形シリコン基板１の表面側に急速熱酸化された多孔質ポリシリコン層６を形成し、急速熱酸化した多孔質ポリシリコン層６上に金属薄膜たる金薄膜７を形成する。 - 特許庁

To provide an etching agent composition for a thin film having high permittivity to be used in manufacturing processes of a semiconductor device which uses a thin film having high permittivity, specifically, a semiconductor device which uses an extremely thin gate insulation film layer and a gate electrode which are essential to increase of integration and rapid operation of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).例文帳に追加

高誘電率薄膜を用いた半導体装置、特にＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field-Effect Transistor）の高集積化と高速化に不可欠な極薄ゲート絶縁膜層、ゲート電極を用いた半導体装置の製造工程に使用される高誘電率薄膜エッチング剤組成物を提供する。 - 特許庁

To provide an etchant composition for a thin film having a high dielectric constant to be used in manufacturing processes of a semiconductor device which uses a thin film having a high dielectric constant, specifically, a semiconductor device which uses an extremely thin gate insulation film layer and a gate electrode which are essential to a higher degree of integration and rapid operation of a MOSFET.例文帳に追加

高誘電率薄膜を用いた半導体装置、特にＭＯＳＦＥＴの高集積化と高速化に不可欠な極薄ゲート絶縁膜層、ゲート電極を用いた半導体装置の製造工程に使用される高誘電率薄膜エッチング剤組成物を提供する。 - 特許庁

By impressing a voltage between the gold thin film 7 and an ohmic electrode 2, using the gold thin film 7 as an positive electrode for the n-type silicon board 1, electrons injected form the n-type silicon board 1 into the rapid thermally oxidized porous polysilicon layer 6 are emitted through the gold thin film 7.例文帳に追加

金薄膜７をｎ形シリコン基板１に対して正極として金薄膜７とオーミック電極２との間に電圧を印加することにより、ｎ形シリコン基板１から急速熱酸化された多孔質ポリシリコン層６に注入された電子が金薄膜７を通して放出される。 - 特許庁

The organic thin-film transistor can be put to a mass production with a simple, rapid and easy form at a low cost, because it contains the azole-metal complex compound used for the gate-insulating layer.例文帳に追加

有機薄膜トランジスタ（ＯＴＦＴ）は上記ゲート絶縁層に使用される上記アゾール−金属錯化合物を含むことから、簡素で迅速かつ容易な様式で低コストにて大量に製造される。 - 特許庁

To provide a photodetector which achieves accurate wavelength identification capability and simple layer structure by utilizing a rapid change of the absorptivity at specific wavelength found in an organic semiconductor thin film without use of external wavelength selection element for wavelength detection and by steepening a change in the photoelectric signal.例文帳に追加

波長検出に外部の波長選択素子を使用せず、有機半導体薄膜のもつ特定波長での吸収率の急激な変化を利用し、さらに光電信号の変化を急峻にすることで、精度の良い波長の同定の機能を有し、且つ簡便な層構造の光検出器を提供する。 - 特許庁

A cope is separated into a ring-shaped thin outer circumferential cope for molding the vicinity of a back flange part and an inner cope for molding a disk part from a rim part, a thermocouple and a cooling channel are arranged at the outer circumferential cope, and rapid cooling is performed to secure a dense layer.例文帳に追加

上型を、後部フランジ部近傍を成型するリング状の薄い外周上型とリム部からディスク部を成型する内部上型に分離し、外周上型に熱電対と冷却水路を配して急冷し緻密層を確保する。 - 特許庁