void latticeとは 意味・読み方・使い方

ELECTRODE HAVING VOID LATTICE LAYER AND BATTERY HAVING THE SAME例文帳に追加

空隙格子層を有する電極および当該電極を有する電池 - 特許庁

A structure 6 of a structure in which a void material is comprised of a steel pipe material 3 and the void steel pipes 3 are separated upward from a steel plate 2 with the axes of the void steel pipes 3 in parallel with the flat surface of the steel plate 2 and are integrally joined together by the steel plate 2 and welding W via lattice materials 4 is used.例文帳に追加

ボイド材が鋼管材３からなり、このボイド鋼管３が、鋼板２の平面方向に管軸線方向を向け、鋼板２から上方に離間され、ラチス材４を介して鋼板２と溶接Ｗにより接合一体化された構造の構造物６を用いる。 - 特許庁

The void of a unit lattice of skutterudite compound CoSb3 is filled with Yb which is a rare earth element, to cause a phonon scatter due to rattling effect independent of surrounding lattice oscillation, providing a relatively low lattice heat conductivity.例文帳に追加

スクッテルダイト化合物ＣｏＳｂ_3 の単位格子の空隙に希土類元素であるＹｂを充填し、これによって空隙に充填されたＹｂが周りの格子振動と無関係にガラガラのように鳴る運動（rattling効果）によるフォノン散乱を生じさせて、相対的に小さい格子熱伝導率を得る。 - 特許庁

This shock absorbing member is composed of a plate-like part 12 and a lattice rib 13 on a back of the plate-like part 2, and is an integrally formed body formed from fiber containing thermoplastic resin where a mean void ratio of the plate-like part 12 is 5-90%.例文帳に追加

板状部と板状部の裏面の格子状リブからなり、繊維含有熱可塑性樹脂で形成される一体成形体であって、板状部の平均空隙率が５〜９０％である衝撃緩衝部材。 - 特許庁

Therefore, the distribution of the flow to the individual fuel assemblies 21 can be calculated by the calculation of the difference in pressure between the tip end and the bottom end of the core 7 without need of the void ratios of the individual lattice channels 11a.例文帳に追加

従って、各格子流路１１ａのボイド率を必要とせず、炉心７の上端と下端との差圧計算により、各燃料集合体２１の流量配分を計算する。 - 特許庁

In the compound semiconductor manufactured like this, a compressive strain is imposed on a crystal and an expansive strain, in the crystal, caused from a void of nitrogen can be relaxed, therefore, the manufactured compound semiconductor is a proper compound semiconductor superior in a crystallinity of less lattice defect.例文帳に追加

このようして製造された化合物半導体にあっては、結晶に圧縮歪みを与え、窒素空孔に起因する結晶中の拡張歪を緩和することができるので、格子欠陥の少ない結晶性に優れた良好な化合物半導体となる。 - 特許庁

A wiring structure is formed, a background (temperature, current density) is solved by a finite element method, and a diffusion analysis is carried out by the use of an electron wind power proportional to a current density and diffusion coefficients (lattice, grain boundary, interface, surface) related to crystal structures, to obtain void density.例文帳に追加

配線の構造を作成し、背景場（温度、電流密度）を有限要素法で解き、電流密度に比例した電子風力と各結晶構造に関わる拡散係数（格子、粒界、界面、表面）を用いて拡散解析を行い、空孔濃度を求める。 - 特許庁