エネルギ帯構造の英語

携帯型情報通信端末の内蔵デバイスの保護に用いられる衝撃吸収体を薄くしても、衝撃エネルギーを十分に吸収可能な耐衝撃構造を提供する。例文帳に追加

To provide an impact resistant structure capable of sufficiently absorbing impact energy even if thickness of an impact absorbing body used for protection of a built-in device of a portable information communication terminal is reduced. - 特許庁

環境負荷の低いエネルギー源で感電や漏電の危険性もなく、構造が簡単でメンテナンスも容易であり、水道の蛇口さえあればどこでも使用可能な携帯性に優れた水圧駆動かみそりを提供する。例文帳に追加

To provide a hydraulically driven razor which uses an energy source of low environmental load, which is free from the risk of electrification and short circuit, which is easy to maintain due to simple structure and which is excellent in portable use since it can be used wherever only the faucet of running water exists. - 特許庁

これらの層の側面に、価電子帯のエネルギー準位が、第１ｐ−InPクラッド層４よりも大きく、InGaAsP活性層３よりも小さいInGaAsP中間層７を設けた構造とする。例文帳に追加

Side faces of these layers are configured to provide an InGaAsP intermediate layer 7 in which an energy level of a valence band is greater than the first p-InP clad layer 4 and smaller than the InGaAsP active layer 3. - 特許庁

水を噴霧する構造部品が絶縁できており、高電圧の帯電部が衝突部のみの容易な構造にでき、かつ、コロナ放電させず水を噴霧し衝突エネルギーで微細化すると同時に水に帯電させるため、オゾンを含まない安全なイオン化粒子を供給することができること。例文帳に追加

To provided an ion generator in which a structural component for spraying water is insulated, and a high voltage electrostatic charged portion can be a simple structure having only a collision portion and moreover, a corona discharge is not conducted and water is sprayed and is pulverized by a collision energy and water is electrified simultaneously, and as a result, safe ion particles not containing ozone can be supplied. - 特許庁

本発明は帯電粒子着脱乾燥技術を利用し、高エネルギー帯電粒子が形成する駆動力と電場を利用し、水分子と除湿構造間の吸着力を直接改変可能で、こうして湿気は吸着部品上に着脱される。例文帳に追加

Use of a charged particle desorbing/drying technology and driving force and an electric field formed by the high energy charged particles allows direct alteration of adsorption force between water molecules and the dehumidifying structure, to desorb humidity on the absorption part. - 特許庁

さらに、伝導帯、価電子帯ともにソース部がチャネル部に対して高いエネルギーとなるため、電子・正孔ともに加速した電荷をチャネルに注入できる構造が実現でき、同一の材料系で容易に超高速のＣＭＯＳＦＥＴを作製することが可能となる。例文帳に追加

Furthermore, since the source part of both conduction band and valence band has a high energy with respect to the channel part, a structure for injecting accelerated electrons and holes into the channel can be realized and an ultrahigh speed CMOSFET can be fabricated easily using the same material system. - 特許庁

６Ｈ—ＳｉＣの基板１１と３Ｃ—ＳｉＣの薄膜１２は、その結晶構造（六方晶系と立方晶系）の相違によりバンドギャップのエネルギレベルがずれており、伝導帯は薄膜１２より基板１１が高く、価電子帯も薄膜１２より基板１１が高い。例文帳に追加

Energy level of band gap is shifted between the 6H-SiC substrate 11 and the 3C-SiC thin film 12 due to difference of the crystal structure (hexagonal system and cubic system) wherein the conduction band of the substrate 11 is higher than that of the thin film 12 and the valence band of the substrate 11 is also higher than that of the thin film 12. - 特許庁

キャリアが正孔の場合は、前記底部絶縁膜はその価電子帯頂面に関して該中間膜に接する側を該第１の半導体領域に接する側よりエネルギーの高い電子構造とすることにより、前記離散化したキャリア捕獲サイトからの正孔の放出を容易とする。例文帳に追加

When the carrier is a positive hole, an electronic structure is provided in which regarding a valence band top, the bottom insulating film has one side making contact with the intermediate film with higher energy than the other side making contact with the first semiconductor area, so that the positive hole is readily released from the discrete carrier trap site. - 特許庁