growth gradientとは 意味・読み方・使い方

To provide a method for manufacturing a semiconductor single crystal by which EPD (etch pit density) can be further reduced by grasping the exact position of the crystal growth interface in a crucible and controlling the position of a temperature gradient region relative to the crucible in single crystal growth by a vertical boat method, and to provide an apparatus therefor.例文帳に追加

縦型ボート法の単結晶成長において，るつぼ内の結晶成長界面の正確な位置を把握し，るつぼに対する温度勾配領域の位置調整を行う。 - 特許庁

An n-type GaAsP composition gradient layer 2 and an n-type GaAsP composition uniform layer 3 are formed in order on an n-type GaAs substrate 1 by an epitaxial growth.例文帳に追加

ｎ−ＧａＡｓ基板１上に、エピタキシャル成長によりｎ−ＧａＡｓＰ組成勾配層２とｎ−ＧａＡｓＰ組成均一層３を順次形成する。 - 特許庁

A composition in which the distribution (or gradient) in the growth axis direction becomes zero is determined through measurement of LSAW velocity distribution in the growth axis direction of crystals each having a composition quite close to a congruent composition, and the absolute relation with the LSAW velocity at the composition is obtained.例文帳に追加

コングルエント組成極近傍の組成の結晶の育成軸方向のLSAW速度分布測定を通して、育成軸方向分布(あるいは勾配)が0になる組成を決定し、その組成でのLSAW速度との絶対的関係を得る。 - 特許庁

In the method for producing a high quality single crystal by a Czochralski method, a lower portion of a solid-liquid interface of single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled.例文帳に追加

チョクラルスキー法による高品質シリコン単結晶の製造方法において、単結晶成長の固液界面の下部を中心部と外周部に分け、前記中心部の温度勾配と外周部の温度勾配をそれぞれ個別に制御する。 - 特許庁

To provide a method for manufacturing a silicon single crystal, by which the gradient of resistivity distribution in the crystal growth axis direction is made small in an ingot of the silicon single crystal.例文帳に追加

シリコン単結晶のインゴットにおいて、結晶成長軸方向の抵抗率分布の傾きを小さくすることが可能なシリコン単結晶の製造方法を提供する。 - 特許庁

Concentration of nitrogen in a silicon crystal and the growth condition V/G (V:growth rate and G: axial temperature gradient of the crystal) are controlled so as to have an OSF region.例文帳に追加

ＯＳＦ領域になるように、シリコン結晶中の窒素の濃度と成長条件Ｖ／Ｇ（Ｖ：成長速度、Ｇ：結晶の軸方向温度勾配）が制御される。 - 特許庁

The method comprises controlling growth conditions, such as growth velocity v, instantaneous axial temperature gradient G_o, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of the agglomerated defects.例文帳に追加

本発明の方法は、シリコン自己格子間物が移動性である温度範囲内で、成長条件、例えば成長速度ｖ、瞬時軸温度勾配Ｇ_０、および冷却速度を、凝集欠陥を形成しないように調節することを含んでなる。 - 特許庁

When the temp. gradient in the axial direction at the high temp. part close to the melting point of silicon is G' and the rate of pulling up is V, the rate of pulling up is controlled so that the V/G' value is kept constant against the change of temp. gradient G' in the axial direction with the progress of crystal growth.例文帳に追加

シリコン融点に近い高温部での軸方向温度勾配Ｇ′とし、引き上げ速度をＶとするとき、結晶育成の進行に伴う軸方向温度勾配Ｇ′の変化に対して、Ｖ／Ｇ′値が一定となるように、引き上げ速度Ｖを調整する。 - 特許庁