「insulating-film」に関連した英語例文の一覧と使い方(7ページ目) - Weblio英語例文検索

An insulating film is formed on an first interlayer insulating film 2, the insulating film is patterned so as to cover a through-hole forming region, and a projection 3 is formed.例文帳に追加

第１の層間絶縁膜２上に絶縁膜を形成し、スルーホール形成領域を覆うようにパターニングし、突出部３を形成する。 - 特許庁

One of the main surface of a semiconductor substrate 10 is formed by successively laminating an insulating film 12, an insulating film 14, and an insulating film 16.例文帳に追加

半導体基板１０の一方の主面には、絶縁膜１２、絶縁膜１４及び絶縁膜１６を順次に重ねて形成する。 - 特許庁

COMPOSITION FOR FORMING INSULATING FILM, POLYMER AND PROCESS FOR PRODUCING THE SAME, PROCESS FOR PRODUCING INSULATING FILM, AND SILICA-BASED INSULATING FILM例文帳に追加

絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜 - 特許庁

The element isolation insulating film 30 is formed of two of a first element isolation insulating film 31, and a second element isolation insulating film 32.例文帳に追加

素子分離絶縁膜３０が、第１素子分離絶縁膜３１と第２素子分離絶縁膜３２の２つにより形成される。 - 特許庁

METHOD FOR PRODUCING INSULATING FILM-FORMING COMPOSITION, INSULATING FILM-FORMING COMPOSITION PRODUCED BY THE PRODUCTION METHOD, INSULATING FILM AND ELECTRONIC DEVICE例文帳に追加

絶縁膜形成用組成物の製造方法、該製造方法により製造された絶縁膜形成用組成物、絶縁膜および電子デバイス - 特許庁

Further, an inter-layer insulating film 7 is formed on the inter-layer insulating film 4, and then a pad 8 is provided in a pad region C on the inter-layer insulating film 7.例文帳に追加

更に、層間絶縁膜４上に層間絶縁膜７を形成し、層間絶縁膜７上におけるパッド領域Ｃにパッド８を設ける。 - 特許庁

To improve adhesibility by forming an adhesion layer, between an inter-metal interlayer insulating film and a protection insulating film, and to prevent a protective insulating film from peeling off near the outer periphery of a semiconductor substrate.例文帳に追加

メタル層間絶縁膜と保護絶縁膜との間に接着層を形成することにより、密着性を向上させる。 - 特許庁

A third insulating film 16 having a dielectric constant lower than that of the second insulating film 15 is formed on the second insulating film 15.例文帳に追加

第２の絶縁膜１５上に、第２の絶縁膜１５よりも比誘電率の低い第３の絶縁膜１６が形成されている。 - 特許庁

In the second place, providing a plasma process to the first insulating film removes a vacancy forming material to make the first insulating film a first porous insulating film 23.例文帳に追加

次に、第１の絶縁膜にプラズマ処理を施して空孔形成材を除去し、第１の絶縁膜を第１の多孔質絶縁膜２３にする。 - 特許庁

An upper interlayer insulating film 10, differing in etching properties from the lower interlayer insulating film, is formed to directly cover the lower interlayer insulating film.例文帳に追加

その下部層間絶縁膜を直接覆うように下部層間絶縁膜とはエッチング特性の異なる上部層間絶縁膜１０を形成する。 - 特許庁

The second interlayer insulating film 5 is covered by a third interlayer insulating film 6, constituted of a material which is harder than the second interlayer insulating film 5.例文帳に追加

そして、２層目層間絶縁膜５よりも硬い材料で構成された３層目層間絶縁膜６で２層目層間絶縁膜５を覆う。 - 特許庁

The semiconductor device includes an interlayer insulating film 1, a lower wiring line 5 formed within the interlayer insulating film 1, a liner film 11 formed on the interlayer insulating film 1, and an interlayer insulating film 12 formed on the liner film 11.例文帳に追加

半導体装置は、層間絶縁膜１と、層間絶縁膜１内に形成された下部配線５と、層間絶縁膜１上に形成されたライナー膜１１と、ライナー膜１１上に形成された層間絶縁膜１２とを備えている。 - 特許庁

A three-layer insulating film composed of a first insulating film, a high dielectric constant film on the first insulating film and a second insulating film on the high dielectric constant film, is formed on the substrate.例文帳に追加

基板に、第１の絶縁膜、及び、第１の絶縁膜上の高誘電率膜、及び、高誘電率膜上の第２の絶縁膜からなる３層絶縁膜を形成する。 - 特許庁

The electrode side insulating film 25 and semiconductor side insulating film 27 are both made of silicon oxide, and the film thickness of the electrode side insulating film 25 is smaller than the film thickness of the semiconductor side insulating film 27.例文帳に追加

電極側絶縁膜２５及び半導体側絶縁膜２７は共にシリコン酸化物からなり、電極側絶縁膜２５の膜厚は半導体側絶縁膜２７の膜厚よりも薄い。 - 特許庁

The kinds of elements are identical in each composition of the first insulating film 21, second insulating film 22, and third insulating film 23, and the charge trapping densities of the first insulating film 21 and the third insulating film 23 are lower than that of the second insulating film 22.例文帳に追加

第１絶縁膜２１、第２絶縁膜２２および第３絶縁膜２３の各組成に含まれている元素の種類が同じであり、かつ、第１絶縁膜２１および第３絶縁膜２３が、第２絶縁膜２２に比べ電荷トラップ密度が低い。 - 特許庁

The wiring structure has a 1st insulating film 710a on a lower- layer Cu wire, a 2nd insulating film 711a which does not have a step due to the lower-layer wire on the 1st insulating film, and a 3rd insulating film 713a which is formed on the 2nd insulating film and is thicker than the 2nd insulating film 711a.例文帳に追加

下層Ｃｕ配線上に第１の絶縁膜７１０ａを備え、該第１の絶縁膜上に下層配線起因の段差を有しない平坦な第２の絶縁膜７１１ａを備え、該第２の絶縁膜上に形成し、第２の絶縁膜の厚みよりも大きい厚みを有する第３の絶縁膜７１３ａとから成る。 - 特許庁

The ferroelectric memory device 1 comprises: a first interlayer insulating film 3; a ferroelectric capacitor 4; an insulating hydrogen barrier film 5; a second interlayer insulating film 6; and a contact hole 7 passing through the second interlayer insulating film 6, the insulating hydrogen barrier film 5, and the first interlayer insulating film 3.例文帳に追加

第１層間絶縁膜３と、強誘電体キャパシタ４と、絶縁性水素バリア膜５と、第２層間絶縁膜６と、第２層間絶縁膜６と絶縁性水素バリア膜５と第１層間絶縁膜３とを貫通するコンタクトホール７と、を備えた強誘電体メモリ装置１である。 - 特許庁

There are formed sequentially on a semiconductor substrate 1 a lower layer conductive film 3, a protective film 5, an insulating film 7, an etching stopper film 9, and an insulating film 11.例文帳に追加

半導体基板１上に下層導電性膜３、保護膜５、絶縁膜７、エッチングストッパ膜９、絶縁膜１１が順次形成される。 - 特許庁

A metallic film 291, an interlayer insulating film 151, a metallic film 292, and an interlayer insulating film 152 are successively deposited on a silicon nitride film 28.例文帳に追加

シリコン窒化膜２８上に金属膜２９１、層間絶縁膜１５１、金属膜２９２、層間絶縁膜１５２を、この順に堆積する。 - 特許庁

In this thin-film transistor, an underlying film, a gate insulating film and an interlayer insulating film are formed of a silicon oxide film.例文帳に追加

薄膜トランジスタにおいて、下地膜、ゲート絶縁膜、層間絶縁膜を酸化珪素膜で形成する。 - 特許庁

On a semiconductor substrate 20, there is formed a laminate film comprised of a gate insulating film 26; a charge storage film 27; an insulating film 28; a polysilicon film 29; a silicon oxide film 30; a silicon nitride film 31; and a cap insulating film 32.例文帳に追加

半導体基板２０上にゲート絶縁膜２６、電荷蓄積膜２７、絶縁膜２８、ポリシリコン膜２９、酸化シリコン膜３０、窒化シリコン膜３１およびキャップ絶縁膜３２からなる積層膜を形成する。 - 特許庁

POLYESTER FILM FOR INSULATING MOTOR AND POLYESTER FILM FOR INSULATING TRANSFORMER例文帳に追加

モーター絶縁用ポリエステルフィルム、およびトランス絶縁用ポリエステルフィルム - 特許庁

INSULATING PARTICULATE FILM, ITS MANUFACTURING METHOD, AND CAPACITOR USING INSULATING PARTICULATE FILM例文帳に追加

絶縁性微粒子膜およびその製造方法ならびに絶縁性微粒子膜を用いたコンデンサー - 特許庁

GRAIN ORIENTED SILICON STEEL SHEET HAVING INSULATING FILM CONTAINING NO CHROMIUM, AND INSULATING FILM AGENT THEREFOR例文帳に追加

クロムを含まない絶縁皮膜を有する方向性電磁鋼板及びその絶縁皮膜剤 - 特許庁

The insulating film 32 comprises an insulating region 322 obtained by oxidizing or nitriding a metal film.例文帳に追加

絶縁膜３２は、金属膜を酸化または窒化して得られた絶縁領域３２２を含む。 - 特許庁

After a high-permittivity insulating film is formed, the surface of the high-permittivity insulating film is subjected to a plasma treatment.例文帳に追加

高誘電率絶縁膜の形成後に、この高誘電率絶縁膜の表面にプラズマ処理を施す。 - 特許庁

A storage electrode is buried in the trench on the capacitor insulating film and the second insulating film.例文帳に追加

キャパシタ絶縁膜と第２の絶縁膜の上でトレンチ内に蓄積電極を埋め込む。 - 特許庁

A second interlayer insulating film IL2 is selectively formed on the first interlayer insulating film IL1.例文帳に追加

第２の層間絶縁膜ＩＬ２は第１の層間絶縁膜ＩＬ１上に選択的に形成されている。 - 特許庁

A first insulating film 2 and a second insulating film 3 are sequentially formed above a semiconductor substrate.例文帳に追加

半導体基板の上方に第１絶縁膜２、第２絶縁膜３が順次形成される。 - 特許庁

INSULATING FILM FOR CAPACITOR, CAPACITOR ELEMENT, METHOD OF MANUFACTURING INSULATING FILM FOR CAPACITOR, AND SEMICONDUCTOR DEVICE例文帳に追加

キャパシタ用絶縁膜、キャパシタ素子、キャパシタ用絶縁膜の製造方法及び半導体装置 - 特許庁

An insulating film 4 and an insulating film 5 of silicon nitride films are formed on the gate electrode 3.例文帳に追加

ゲート電極３には、シリコン窒化膜である絶縁膜４及び絶縁膜５が形成されている。 - 特許庁

The concentration of hydrogen in the second gate insulating film 17 is made lower than that in the first interlayer insulating film 22.例文帳に追加

第２ゲート絶縁膜17中の水素濃度を第１層間絶縁膜22中の水素濃度より低くする。 - 特許庁

The gas (45) containing Hf is supplied onto the insulating film to deposit Hf atoms (41) on the insulating film.例文帳に追加

絶縁膜の上にＨｆを含むガス(45)を供給して、絶縁膜の上にＨｆ原子(41)を堆積させる。 - 特許庁

A nitride insulating film is formed in a region of the insulating film 112 in which nitrogen is implanted.例文帳に追加

絶縁膜１１２のうちの窒素が注入された領域には、窒化絶縁膜が形成される。 - 特許庁

PHENYL-CONTAINING SILANE FOR INSULATING FILM AND METHOD FOR PRODUCING INSULATING FILM USING THE SAME例文帳に追加

絶縁膜用フェニル含有シランとそれを用いた絶縁膜の製造方法 - 特許庁

A second insulating film is formed on the semiconductor device separately from the first insulating film.例文帳に追加

第１絶縁膜から離隔され半導体装置上に第２絶縁膜が形成される。 - 特許庁

Here, the end face of the carbon-free insulating film is located outside from the end face of the carbon-containing insulating film.例文帳に追加

ここで、炭素非含有絶縁膜の端面が、炭素含有絶縁膜の端面より外側に位置している。 - 特許庁

RESIN COMPOSITION FOR INSULATING FILM, COATING VARNISH, INSULATING FILM AND SEMICONDUCTOR DEVICE USING THEM例文帳に追加

絶縁膜用樹脂組成物、コーティングワニス、絶縁膜及びそれらを用いた半導体装置 - 特許庁

An insulating diffusion barrier film 49 coating the insulating film and a surface of the Cu wiring pattern is formed.例文帳に追加

絶縁膜上と銅配線パターンの表面を覆う絶縁性拡散障壁膜４９を形成する。 - 特許庁

A control gate electrode is formed on the tunnel insulating film and the second gate insulating film.例文帳に追加

トンネル絶縁膜及び第２ゲート絶縁膜上にコントロールゲート電極を形成する。 - 特許庁

An insulating film 13 is formed thereon, and a semiconductor layer 14 is formed on the insulating film 13.例文帳に追加

全面に絶縁膜１３が形成され、その上には半導体層１４が形成されている。 - 特許庁

METHOD OF PRODUCING INSULATING FILM CONTACTING WITH ELECTRODE AND SEMICONDUCTOR DEVICE INCLUDING THE INSULATING FILM例文帳に追加

電極に接する絶縁膜の製造方法及びその絶縁膜を含む半導体装置 - 特許庁

COMPOSITION FOR POROUS INSULATING FILM, ITS MANUFACTURING METHOD, POROUS INSULATING FILM AND ITS MANUFACTURING METHOD例文帳に追加

多孔質絶縁膜用組成物、その製造方法、多孔質絶縁膜およびその製造方法 - 特許庁

Then, a similar insulating film 48 as the insulating film 43 is formed between an upper electrode 49 and a polar liquid 47.例文帳に追加

また、上部電極49と極性液体47との間に、絶縁膜43と同様の絶縁膜48を形成する。 - 特許庁

An insulating film 10 is formed on the insulating film 7 and the upper electrode 8.例文帳に追加

絶縁膜７や上部電極８上には絶縁膜１０が形成されている。 - 特許庁