「appearance potential」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

An electrophotographic photoreceptor 11 obtained by forming a photosensitive layer 4 containing the electric charge generating material on an electrically conductive substrate 1 has high dark attenuation, high photoreceptor sensitivity and low residual potential as well as good appearance and shape.例文帳に追加

従って、このような電荷発生材料を有する感光層４が、導電性支持体１上に形成されて成る電子写真感光体１１は、外観形状が良いだけでは無く、暗減衰や感光体感度が高く、残留電位は低いものになる。 - 特許庁

The requirements of Article 14 of the Commercial Code are as follows: (i) there must exist an appearance that makes potential customers believe that the nominee operates the business; (ii) the nominee is at fault for allowing the perpetration of the aforementioned appearance by permitting another party to use his name, and (iii) the counterparty believed without gross negligence that the nominee is the operator of the business. In the above mentioned judgment, requirement (ii) was not met; however, the judgment held that any party which allows another to make the aforementioned appearance should be held responsible by virtue of applying mutatis mutandis Article 14 of the Commercial Code by analogical interpretation of Article 14 of the Commercial Code. 例文帳に追加

商法第１４条適用の要件は、①名板貸人が営業主であるという外観の存在、②名義使用の許諾という名板貸人の帰責事由の存在、③取引の相手方が重大な過失なくして名板貸人が営業主であると誤認したことであるが、本判決は、②の名義使用の許諾はないが、上記のような外観の作出に関与した場合について、商法第１４条の理論的前提である外観法理を前提に、同条の類推適用を認めたものである。 - 経済産業省

A thin film of a constant film thickness is deposited without impairing the appearance of the thin film or even when multilayer films are mass-produced by electrically insulating a mask which surrounds the outer periphery of a substrate from a deposition-preventive plate which is disposed immediately above the mask without connecting a metal film deposited on the substrate to the grounding electric potential during the sputtering.例文帳に追加

スパッタリング中において基板上に形成される金属膜をアース電位に接続させることなく、かつ、基板の外周を取り囲むマスクと前記マスクの直上に設けられた防着板とを電気的に絶縁させることにより、外観上、薄膜に損傷を与えることなく、かつ、多層膜を量産した場合でも、安定した膜厚で薄膜を形成することができる。 - 特許庁

To provide a method and a device of inspecting a semiconductor device by charged particle beams and focused ion beams, for detecting, from a potential contrast difference of secondary electron images, a failure point such as leakage due to a defect in the semiconductor device, which cannot be detected merely through appearance shape observation in conventional semiconductor analysis.例文帳に追加

従来の半導体解析において外観形状観察だけでは検出することが不可能な、半導体装置内部の欠陥に基づくリーク等の不良箇所を、二次電子像の電位コントラスト差から検出する、荷電粒子ビームおよび集束イオンビームによる半導体装置の検査方法および検査装置を提供する。 - 特許庁