「compound-semiconductor surface」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

This wide-gap semiconductor device is obtained by coating an external surface of the wide-gap semiconductor element with a synthetic polymer compound.例文帳に追加

ワイドギャップ半導体素子の外面を、合成高分子化合物で被覆する。 - 特許庁

METHOD FOR TREATING COMPOUND SEMICONDUCTOR LAYER SURFACE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE例文帳に追加

化合物半導体層の表面処理方法及び半導体装置の製造方法 - 特許庁

To provide the method of polishing a compound semiconductor substrate in which oxygen on the surface of the compound semiconductor substrate is reduced, the compound semiconductor substrate, the method of manufacturing a compound semiconductor epi-substrate, and the compound semiconductor epi-substrate.例文帳に追加

化合物半導体基板の表面に存在する酸素を低減する化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板を提供する。 - 特許庁

COMPOUND SEMICONDUCTOR SUBSTRATE, METHOD FOR INSPECTING THE SAME, METHOD FOR SURFACE-TREATING COMPOUND SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR CRYSTAL例文帳に追加

化合物半導体基板の検査方法、化合物半導体基板、化合物半導体基板の表面処理方法、および化合物半導体結晶の製造方法 - 特許庁

To provide a method for inspecting a compound semiconductor reducing a cost while decreasing the quantity of impurities on the surface of a compound semiconductor substrate, the compound semiconductor substrate, the method for surface-treating the compound semiconductor, and a manufacturing method for a compound semiconductor crystal.例文帳に追加

コストを低減するとともに、化合物半導体基板の表面の不純物量を減少できる化合物半導体の検査方法、化合物半導体基板、化合物半導体の表面処理方法、および化合物半導体結晶の製造方法を提供する。 - 特許庁

METHOD FOR TREATING SURFACE OF ZnTe BASE COMPOUND SEMICONDUCTOR CRYSTAL AND ZnTe BASE COMPOUND SEMICONDUCTOR CRYSTAL例文帳に追加

ＺｎＴｅ系化合物半導体結晶の表面処理方法およびＺｎＴｅ系化合物半導体結晶 - 特許庁

Further, the compound semiconductor crystal 10 preferably has a flat surface 11 at its side surface.例文帳に追加

化合物半導体結晶１０は、側面に平坦面１１を有することが好ましい。 - 特許庁

REAR SURFACE REFLECTION COMPOUND SEMICONDUCTOR SOLAR CELL AND ITS MANUFACTURING PROCESS例文帳に追加

裏面反射型化合物半導体太陽電池およびその製造方法 - 特許庁

SURFACE TREATMENT METHOD OF ZnTe BASED COMPOUND SEMICONDUCTOR AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE例文帳に追加

ＺｎＴｅ系化合物半導体の表面処理方法および半導体装置の製造方法 - 特許庁

The ZnO compound semiconductor crystal is grown on the main surface.例文帳に追加

主表面上に、ＺｎＯ系化合物半導体結晶を成長させる。 - 特許庁

METHOD FOR DETECTING SURFACE DEFECTS OF ZnO-BASED COMPOUND SEMICONDUCTOR CRYSTAL例文帳に追加

ＺｎＯ系化合物半導体結晶の表面欠陥の検出方法 - 特許庁

To provide a surface treatment method of a compound semiconductor substrate which reduces a concentration of an impurity of surface of the substrate composed of a compound semiconductor to reduce a concentration of impurity of a layer formed on the substrate, to provide a compound semiconductor manufacturing method, to provide a compound semiconductor substrate, and to provide a semiconductor wafer.例文帳に追加

化合物半導体からなる基板の表面の不純物濃度を低減して、基板上に形成される層の不純物濃度を低減する化合物半導体基板の表面処理方法、化合物半導体の製造方法、化合物半導体基板、および半導体ウエハを提供する。 - 特許庁

In the wet etching method of a compound semiconductor, a laminated compound semiconductor layer is formed, which includes two layers of compound semiconductor layers 31 and 32 having different etching rates, and etching is carried out from the end surface of the laminated compound semiconductor layer, to form a tapered shape 113 on the end surface of the lower compound semiconductor layer 31.例文帳に追加

２層のエッチングレートの異なる化合物半導体層３１、３２より成る積層化合物半導体層を形成し、この積層化合物半導体層にその端面からエッチングを施して下層の化合物半導体層３１端面にテーパ形状１１３を形成する化合物半導体ウェットエッチング方法。 - 特許庁

A III-V compound semiconductor layer 106 is formed on the surface part 105.例文帳に追加

表面部１０５上にIII-V族の化合物半導体層１０６を成膜する。 - 特許庁

To further reduce the surface level of laminated structure of a compound semiconductor.例文帳に追加

化合物半導体の積層構造体の表面準位をより低減する。 - 特許庁

STABILIZATION OF SURFACE OF COMPOUND SEMICONDUCTOR AND MANUFACTURE OF SEMICONDUCTOR LASER DEVICE USING THE METHOD, AND SEMICONDUCTOR DEVICE SUCH AS SEMICONDUCTOR LASER DEVICE例文帳に追加

化合物半導体表面の安定化方法、それを用いた半導体レーザ素子の製造方法、および半導体レーザ素子等の半導体素子 - 特許庁

Nitrogen atoms are introduced onto the surface of a semiconductor, the components of the semiconductor near the of the surface semiconductor, where the nitrogen atom is introduced is combined with the nitrogen atom, a nitride compound that is the compound between the component of the semiconductor and the nitrogen atom is formed on the surface of the semiconductor, and the nitride compound is used as the protective film on the surface of the semiconductor.例文帳に追加

窒素原子を半導体の表面に導入し、窒素原子を導入された半導体の表面近傍の半導体の構成元素と窒素原子とを化合させて、半導体の表面に半導体の構成元素と窒素原子との化合物たる窒化化合物を形成し、窒化化合物を半導体の表面の保護膜とする。 - 特許庁

To realize a reduction in the surface level density and an improvement in a surface stability in a compound semiconductor device.例文帳に追加

化合物半導体デバイスにおいて、表面準位密度の低減・表面安定化を実現する。 - 特許庁

SURFACE PURIFICATION METHOD, SURFACE SMOOTHNESS IMPROVEMENT METHOD, AND PURIFICATION DEVICE OF COMPOUND SEMICONDUCTOR SUBSTRATE例文帳に追加

化合物半導体基板の表面清浄化方法、表面平滑度向上方法および清浄化装置 - 特許庁

SURFACE TREATMENT METHOD FOR SUBSTRATE, SUBSTRATE AND METHOD FOR GROWING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR例文帳に追加

基板の表面処理方法、基板、窒化ガリウム系化合物半導体の成長方法 - 特許庁

METHOD OF GROWING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND METHOD OF PROCESSING SUBSTRATE SURFACE例文帳に追加

窒化ガリウム系化合物半導体の成長方法及び基板の表面処理方法 - 特許庁

The surface treatment method of a compound semiconductor substrate includes a substrate preparing process (S10) and a first cleaning process (S20).例文帳に追加

基板準備工程（Ｓ１０）と、第１洗浄工程（Ｓ２０）とを備えている。 - 特許庁

To provide a compound semiconductor substrate which substantially improves the crystallinity of a gallium nitride-based compound semiconductor that is epitaxially grown on the surface of the semiconductor substrate.例文帳に追加

表面にエピタキシャル成長される窒化ガリウム系化合物半導体の結晶性を大幅に改善することができる化合物半導体基板を提供すること。 - 特許庁

The compound semiconductor substrate has the surface roughness Rms of 0.2 nm or less measured by the method for inspecting the compound semiconductor substrate.例文帳に追加

化合物半導体基板は、上記化合物半導体基板の検査方法により測定される表面粗さＲｍｓが０．２ｎｍ以下である。 - 特許庁

SURFACE TREATMENT METHOD FOR SUBSTRATE, SUBSTRATE, METHOD FOR GROWING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM-NITRIDE-BASED COMPOUND SEMICONDUCTOR, LIGHT-EMITTING ELEMENT AND ELECTRONIC ELEMENT例文帳に追加

基板の表面処理方法、基板、窒化ガリウム系化合物半導体の成長方法、窒化ガリウム系化合物半導体、発光素子及び電子素子 - 特許庁

This semiconductor near-field light source has a compound semiconductor layer in a surface emission laser structure 12 on a compound semiconductor substrate 11, a compound semiconductor layer 15 in a trigonal pyramid structure on the compound semiconductor layer surface, and a micro aperture 13 in an oscillated wavelength order or smaller of the surface emission laser in the vicinity of an apex of the trigonal pyramid structure.例文帳に追加

半導体近接場光源は、化合物半導体基板１１上に、面発光レーザ構造１２の化合物半導体層を有し、化合物半導体層表面に三角錐構造の化合物半導体層１５を有し、三角錐構造の頂点近傍に面発光レーザの発振波長オーダ以下の微小開口１３を有する。 - 特許庁

A compound semiconductor thin film includes a rear surface electrode 22, a p-type compound semiconductor thin film 23, an n-type compound semiconductor thin film 24, a buffer layer 25, a window layer 26 and a transparent conductive film 27.例文帳に追加

基板２１上に形成された裏面電極２２、ｐ型化合物半導体薄膜２３、ｎ型化合物半導体薄膜２４、バッファ層２５、窓層２６および透明導電膜２７を含む。 - 特許庁

To provide a compound semiconductor substrate having an uneven surface on which elements with suppressed characteristic deterioration can be precisely formed, a compound semiconductor device, and a manufacturing method of the compound semiconductor substrate.例文帳に追加

特性劣化が抑制される素子を精密に形成することができる凹凸表面を有する化合物半導体基板、化合物半導体デバイス及び化合物半導体基板の製造方法を提供する。 - 特許庁

The optical semiconductor device comprises an optical semiconductor element having an element region on a compound semiconductor substrate wherein an angle of 5-85° is set between the dicing direction of the optical semiconductor element and the orientation of cleavage surface of the compound semiconductor.例文帳に追加

化合物半導体基板上に素子領域が形成された光半導体素子を備え、光半導体素子のダイシング方向と、化合物半導体の割れ結界面方位との角度を５〜８５度とする。 - 特許庁

A III nitride compound semiconductor layer is grown on the surface of the base layer.例文帳に追加

そして、下地層の表面にIII族窒化物系化合物半導体層を成長させる。 - 特許庁

First, the photoluminescence measuring of a surface 10a of a compound semiconductor board 10 is performed.例文帳に追加

まず、化合物半導体基板１０の表面１０ａのフォトルミネッセンス測定を行う。 - 特許庁

First, photoluminescence measuring of the surface 10a of the compound semiconductor substrate 10 is performed.例文帳に追加

まず、化合物半導体基板１０の表面１０ａのフォトルミネッセンス測定を行う。 - 特許庁

Gas containing a halogen atom is brought into contact with the surface of the compound semiconductor substrate 1.例文帳に追加

化合物半導体基板１の表面にハロゲン原子を含むガスを接触させる。 - 特許庁

Spectral ellipsometry measurement is performed on a surface 10a of a compound semiconductor substrate 10.例文帳に追加

化合物半導体基板１０の表面１０ａの分光エリプソメトリ測定を行う。 - 特許庁

ZnO COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING A-SURFACE SAPPHIRE SUBSTRATE, AND MANUFACTURING METHOD THEREFOR例文帳に追加

Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法 - 特許庁

SURFACE PROCESSING METHOD OF SUBSTRATE AND MANUFACTURING METHOD OF GROUPS III-V COMPOUND SEMICONDUCTOR例文帳に追加

基板の表面処理方法およびＩＩＩ−Ｖ族化合物半導体の製造方法 - 特許庁

WAFER INCLUDING COMPOUND SEMICONDUCTOR SURFACE LAYER CONTAINING INDIUM AND CARRIER DENSITY EVALUATION METHOD THEREOF例文帳に追加

Ｉｎを含む化合物半導体表面層を含むウエハとそのキャリヤ密度評価方法 - 特許庁

The surface treatment of the ZnTe-based compound semiconductor also includes a second surface treatment process (process A) wherein, while atomic hydrogen is irradiated on the ZnTe-based compound semiconductor substrate, the compound semiconductor substrate is annealed at a temperature ranging between 80°C and 150°C, before the first surface treatment process is conducted.例文帳に追加

さらに、前記第１の表面処理工程の前に、前記ＺｎＴｅ系化合物半導体基板に原子状水素を照射しながら８０℃から１５０℃の温度範囲でアニールする第２の表面処理工程（工程Ａ）を有するようにした。 - 特許庁

The compound semiconductor device is provided with: a compound semiconductor multilayer structure 2; a surface protective film 10 which is formed on the compound semiconductor multilayer structure 2; a source electrode 4 which is formed above the compound semiconductor multilayer structure 2; a drain electrode 5; and a gate electrode 6.例文帳に追加

化合物半導体積層構造２と、化合物半導体積層構造２上に形成された表面保護膜１０と、化合物半導体積層構造２上方に形成されたソース電極４、ドレイン電極５及びゲート電極６と、が設けられている。 - 特許庁

To form the chip separating surface of a group III nitride-based compound semiconductor element chip formed on a substrate to be an inclined surface.例文帳に追加

基板上に形成されたIII族窒化物系化合物半導体素子チップのチップ分割面を傾斜面とする。 - 特許庁

To provide a manufacturing method of a group III nitride compound semiconductor substrate by which quality such as crystal quality, warping and surface flatness and(or) productivity of the group III nitride compound semiconductor substrate are improved.例文帳に追加

III族窒化物系化合物半導体の結晶品質、反り、表面平坦度などに関する品質や、或いは生産性を向上させること。 - 特許庁

To provide a manufacturing method of a high quality compound semiconductor wafer with no stain attached to the surface of the compound semiconductor light emitting element wafer.例文帳に追加

化合物半導体発光素子ウェハーの表面に汚れが付着していない高品質な化合物半導体ウェハーの製造方法を提供すること。 - 特許庁

To provide a polishing method for a compound semiconductor crystal wafer obtaining the compound semiconductor crystal wafer having a uniform surface in finishing polishing.例文帳に追加

仕上げポリッシュの際に表面が均一な化合物半導体結晶ウェハが得られる化合物半導体結晶ウェハの研磨方法を提供する。 - 特許庁

An antisurfactant is stuck on the compound semiconductor surface and antimony-based quantum dots are grown and formed on the compound semiconductor surface on which the antisurfactant stick.例文帳に追加

化合物半導体表面上に、アンチサーファクタントを付着させ、次いで、アンチサーファクタントが付着した上記化合物半導体表面上に、アンチモン系量子ドットを成長させて形成する。 - 特許庁

The semiconductor for photoelectric conversion material has a compound expressed in formula (1) adsorbed on the surface of the semiconductor.例文帳に追加

下記一般式（１）で表される化合物が半導体表面に吸着されている光電変換材料用半導体。 - 特許庁