quantum well stateとは 意味・読み方・使い方

As for a quantum logic element which uses the electron state of a semiconductor quantum structure, inter-polarization interaction between excitons having polarization in a semiconductor quantum well structure is used.例文帳に追加

本発明は、半導体量子構造の電子状態を利用した量子論理素子に関し、半導体量子井戸構造中の分極を有する励起子間の分極間相互作用を利用する。 - 特許庁

The surface state of the N-InP substrate 1 is restrained from being transmitted to an InGaAsP multi-quantum well layer 4 by the N-InP buffer layer 2.例文帳に追加

ｎ−ＩｎＰバッファ層２によって，ｎ−ＩｎＰ基板１の表面の状態は，ＩｎＧａＡｓＰ多重量子井戸層４に伝達されることはない。 - 特許庁

To block harmful X rays and increase the light emission efficiency in a conventional deep UV source arranged so that an Al_xGa_1-xN/AlN multiple quantum well (MQW) layer of a wide band gap semiconductor having no harmful substance mercury is excited by an electron beam to obtain deep UV light from the multiple quantum well staying in its excitation state.例文帳に追加

有害物質水銀を含まないワイドバンドギャップ半導体のAl_xGa_1-xN/AlN多重量子井戸（MQW）層を電子線で励起して励起状態の多重量子井戸から深紫外光を得る従来の深紫外光源において、有害なＸ線を阻止して、発光効率を高める。 - 特許庁

As the above fluorescent coloring matter has high quantum yield in a solid state(including solid and semi-solid), this cosmetic composition has high fluorescence intensity even in a dry state, thus having excellent color-brightening effect and being high in light resistance as well.例文帳に追加

この蛍光色素は、固体状態（固体及び半固体を含む）で高い量子収率を有しているので、乾燥状態でも高い蛍光強度を有しており、優れた明色化効果を有し、かつ耐光性にも優れている。 - 特許庁

Each material and each thickness of the barrier layer 21 and the quantum well layer 22 is selectively set so that electrons can pass through the barrier layer 21 by a tunnel effect, and that the X level of the barrier layer 21 which is present in a Γ mini-band and the Γlevel of the quantum well layer 22 can be turned into a resonating state.例文帳に追加

障壁層２１と量子井戸層２２の各材料と各厚さを、電子が障壁層２１をトンネル効果により通過可能であり、Γミニバンド中に障壁層２１のＸ準位が存在して障壁層２１のＸ準位と量子井戸層２２のΓ準位とが共鳴状態となるように選択設定される。 - 特許庁

The barrier layer of a multiple quantum well semiconductor element is respectively formed of a plurality of internal barrier layers, and the height of a hetero barrier to a hole between the barrier layer and quantum well layer is changed in a step state, from higher hetero barrier to lower hetero barrier, in the respective barrier layers along the direction from a clad layer with a first conductivity toward one with a second conductivity.例文帳に追加

多重量子井戸半導体素子の障壁層をそれぞれ複数の内部障壁層で構成し、各障壁層内において当該障壁層と量子井戸層の間のホールに対するヘテロ障壁高さを、第１の導伝性を有するクラッド層から第２の導伝性を有するクラッド層の方向に沿って、大きいヘテロ障壁高さから小さいヘテロ障壁高さへと階段状に変化させる。 - 特許庁

By changing the distance and an applied voltage between the metal probe and the multilayer film surface, the quantum well state generated in the multilayer film is changed, and the relative magnetization between the magnetic metal layers is changed.例文帳に追加

金属探針と多層膜表面との間の距離、印加電圧を変化させることにより、多層膜中に生じる量子井戸状態を変化させ、磁性金属層間の相対的な磁化を変化させる。 - 特許庁