導体２上にフッ素樹脂からなる絶縁層４を設けた絶縁電線１において、導体２と共に絶縁層４を熱処理して導体２に対する絶縁層４のピール強度を０．０５Ｎ／ｍｍ以上にしたものである。例文帳に追加

In the insulated electric wire 1 having the insulating layer 4 formed of fluorine resin on the conductor 2, the insulating layer 4 is subjected to induction heating treatment together with the conductor 2 to have a peeling strength of 0.05 N/mm or more with respect to the conductor 2. - 特許庁

半導体素子４と回路配線部３２とが絶縁物６により覆われる。例文帳に追加

The semiconductor element 4 and circuit wiring part 32 are covered with an insulator 6. - 特許庁

耐放射線性を有する絶縁ゲート型半導体素子、絶縁ゲート型半導体集積回路を提供する。例文帳に追加

To provide an insulated gate semiconductor device, along with an insulated gate semiconductor integrated circuit, having radiation resistance. - 特許庁

３００℃以上の高温雰囲気でも長期間安定した高い絶縁耐力を有する耐熱絶縁線輪用素線導体、耐熱絶縁線輪、および耐熱絶縁線輪の製造方法を提供すること。例文帳に追加

To provide a strand conductor for heat resistant insulated coils, a heat-resistant insulated coil and its manufacturing method which has high deterioration strength stable for a long time even in a high temperature atmosphere over 300°C. - 特許庁

半導体基板とゲート絶縁膜、層間絶縁膜、配線層、保護絶縁膜等の半導体装置に形成される膜又は層の界面近傍での重水素元素濃度が1x10^19cm^-3以上であることを特徴とする金属−絶縁膜−半導体（MIS）構造を有する半導体装置とする。例文帳に追加

The semiconductor device comprises a metal-insulation film-semiconductor (MIS) structure having a heavy hydrogen concentration equal to or more than 1×10^19 cm^-3 in the neighborhood of an interface between a semiconductor substrate and films or layers formed in the semiconductor device such as a gate insulation film, an interlayer insulation layer, and a protective insulation film. - 特許庁

半導体基板とゲート絶縁膜、層間絶縁膜、配線層、保護絶縁膜等の半導体装置に形成される膜又は層の界面近傍での重水素元素濃度が1x1019cm-3以上であることを特徴とする金属−絶縁膜−半導体（MIS）構造を有する半導体装置。例文帳に追加

A semiconductor device having a metal-insulator-semiconductor (MIS) structure in which each deuterium concentration near interfaces between a semiconductor substrate and a film or a layer formed in the semiconductor device such as a gate insulation film, an interlayer insulation film, a wiring layer and a protective insulation film is 1x1019 cm-3 and over. - 特許庁

半導体基板とゲート絶縁膜、層間絶縁膜、配線層、保護絶縁膜等の半導体装置に形成される膜又は層の界面近傍での重水素元素濃度が1x10^19cm^-3以上であることを特徴とする金属−絶縁膜−半導体（MIS）構造を有する半導体装置。例文帳に追加

The semiconductor device has a metal-insulating film-semiconductor (MIS) structure wherein the deuterium-element concentration is not smaller than 1×10^19/cm^-3 present near such films or layers formed in a semiconductor device as a semiconductor substrate, a gate insulating film, an interlayer insulating film, a wiring layer, and a protective insulating film. - 特許庁

絶縁膜中の貫通配線が、絶縁膜よりも下層に配置されている配線層あるいは半導体素子層の配線と剥離するのを防ぐ。例文帳に追加

To provide a wiring substrate preventing a through wiring in an insulating film from exfoliating from a wiring layer arranged in a layer lower than the insulating film, or a wiring of a semiconductor element layer. - 特許庁

導体の周囲が架橋アクリルゴムを含む絶縁層で被覆されている絶縁電線において、前記絶縁層に安定剤として芳香環を有する窒素系安定剤を含有せしめて絶縁電線を構成した。例文帳に追加

In an insulation electric wire in which the circumference of a conductor is coated by an insulating layer containing crosslinked acrylic rubber, the insulation electric wire is configured so that the insulating layer contains a nitrogen-based stabilizer having an aromatic ring as a stabilizer. - 特許庁

非接触給電コイルにおいて、絶縁されていない複数本の素線２からなる導体３を巻回し、絶縁体４によりモールドしたこと、あるいは、絶縁されていない複数本の素線を絶縁体でケーブル化して導体とし、この導体を巻回した。例文帳に追加

In the non-contact power supply coil, a conductor 3 comprising a plurality of strand wires 2 that are not insulated is wound and molded by an insulator 4, or the plurality of strand wires 2 that are not insulated are made into a cable by the insulator to form the conductor to be wound. - 特許庁

絶縁基材１と、絶縁基材上に整列して設けられた複数の導体配線２と、導体配線の半導体素子搭載領域７に各々形成され、導体配線の長手方向を横切って導体配線の両側の絶縁基材上の領域に亘り形成された突起電極３とを備える。例文帳に追加

The wiring board comprises an insulating substrate 1, a plurality of wiring conductors 2 arranged on the insulating substrate, and a bump electrode 3 formed in each semiconductor element mounting region 7 of the wiring conductor over the region on the insulating substrate, on the opposite sides of the wiring conductor, while traversing the wiring conductor in the longitudinal direction. - 特許庁

複数の素線が撚り合わせてなる撚線導体の外周に絶縁層が被覆し、前記絶縁層の被覆と同時に前記撚線導体の素線相互間の空隙部および前記撚線導体と絶縁層間の空隙部に水密コンパウンドを充填する水密絶縁電線の製造方法において、前記素線の表面をプラズマ処理することを特徴とする水密絶縁電線の製造方法で解決できる。例文帳に追加

With the manufacturing method of the watertight insulated wire with an insulation layer coated around the outer periphery of a stranded conductor composed of a plurality of stranded wires and at same time, with a gap between the element wires of the stranded conductor and the gap between the stranded conductor and the insulation layer filled with a watertight compound, the surface of the element wires is subjected to plasma treatment. - 特許庁

半導体集積回路は、半導体素子が一方の主面上に集積化された半導体基板と、この基板上に配置された絶縁層と、絶縁層上に配置された一つ以上の半導体素子と、絶縁層に形成された窓を通り、半導体基板上に集積化された半導体素子と絶縁層上に配置された一つ以上の半導体素子とを電気的に接続する配線を有する。例文帳に追加

The semiconductor integrated circuit comprises a semiconductor substrate where semiconductor elements are integrated on one main surface, an insulating layer provided on the substrate, one or more semiconductor elements provided on the insulating layer, and a wiring which electrically connects, through a window formed at the insulating layer, the semiconductor elements integrated on the semiconductor substrate to at least one semiconductor element provided on the insulating layer. - 特許庁

導体の周囲が、架橋シリコーンゴムと架橋フッ素ゴムとを混合した架橋ゴムを含む絶縁層で被覆されている絶縁電線とする。例文帳に追加

The insulated wire comprises a conductor covered with an insulating layer containing cross-linked rubber made by mixing cross-linked silicone rubber and cross-linked fluororubber. - 特許庁

圧力センサ素子１０は、絶縁基板１１を備え、この絶縁基板１１上には、銅等からなる線路導体１２が敷設されている。例文帳に追加

The pressure sensor element 10 is provided with an insulation substrate 11, a wire conductor 12 of copper laid down on the insulation substrate 11, and the like. - 特許庁

ビット線２４、接続導体層２５及びＭＴＪ素子３０が形成された層間絶縁膜２２上には、層間絶縁膜２６が形成されている。例文帳に追加

An interlayer dielectric 26 is formed on an interlayer dielectric 22 where a bit line 24, a connecting conductor layer 25, and an MTJ element 30 are formed. - 特許庁

第２の絶縁膜及び第１の絶縁膜の内部に埋め込まれた導電性の接続部材が、第１の配線と半導体素子とを電気的に接続する。例文帳に追加

A conductive connection member buried in the second insulating film and the first insulating film electrically connects first wiring and the semiconductor element. - 特許庁

絶縁性のボビン部９に周囲が絶縁物で被覆された導体素線１が巻回された電磁拡管用コイルを製造する方法である。例文帳に追加

This is a method for manufacturing a coil for an electromagnetic expanded the tube wound with conductor strands 1 covering the a periphery of an insulating bobbin 9 with an insulator on the bobbin 9. - 特許庁

半導体装置１０は、素子領域を有する半導体基板１１上に形成された低誘電率絶縁層１７と、低誘電率絶縁層１７で絶縁されたＣｕ配線１８、２０とを有する。例文帳に追加

A semiconductor device 10 includes a low-permittivity insulating layer 17 which is formed on a semiconductor substrate 11 having an element region and Cu wires 18 and 20 which are insulated by the low-permittivity insulating layer 17. - 特許庁

半導体装置は、配線１１を有する絶縁性基板１と、絶縁性基板１上に実装され、かつ絶縁性基板１側の面に電極２１を有する半導体素子２とを備える。例文帳に追加

The semiconductor device includes an insulating substrate 1 having wiring 11, and a semiconductor element 2 which is mounted on the insulating substrate 1 and has an electrode 21 on the surface of side of the insulating substrate 1. - 特許庁

パワー半導体モジュールが、絶縁板と絶縁板の主表面に設けられた配線層とを含む絶縁基板と、配線層上に固定された半導体素子と、絶縁板の主表面に略平行な接合面を有し、配線層上に接合面が半田層で接続された内部電極とを含む。例文帳に追加

The power semiconductor module includes an insulating substrate containing wiring layers, provided on an insulating board and the main surface of the insulating board, a semiconductor device fixed on the wiring layers, and an internal electrode where the main surface of the insulating board has an almost parallel jointing surface on it and the composition plane is connected to the wiring layers with a solder layer. - 特許庁

金属線からなる導体、炭素繊維からなる導体、およびこれらの導体を被覆する絶縁体を有することを特徴とする自動車用電線。例文帳に追加

The electric wire for an automobile is composed of a conductor made of metal wires, a conductor made of carbon fibers, and an insulation body covering those conductors. - 特許庁

金属−絶縁体−金属キャパシタ及びダマシン配線構造を有する半導体素子の製造方法例文帳に追加

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT HAVING METAL-INSULATOR-METAL CAPACITOR AND DAMASCENE WIRING STRUCTURE - 特許庁

基板３及び配線４を被覆する絶縁膜５を半導体素子１の下側にまで配置する。例文帳に追加

An insulation film 5 covering a substrate 3 and a wiring 4 is arranged down to the underside of a semiconductor element 1. - 特許庁

半導体素子２０と配線層５０との間に絶縁樹脂層４０が設けられている。例文帳に追加

An insulating resin layer 40 is provided between a semiconductor element 20 and a wiring layer 50. - 特許庁

規定形状に成形した導体素線を電気絶縁基材で巻回した電気絶縁線輪単体に前記エポキシ樹脂組成物を含浸後に硬化した電気絶縁線輪。例文帳に追加

The electrically insulated wire ring is manufactured by impregnating an electrically insulated wire ring unit formed by insulation-coating conductor strands shaped regularly with an electric insulation basic material with the epoxy resin composition and then being cured. - 特許庁

コイルの導体６２の回りに素線絶縁６３を施したコイル導体６１を束ね、束ねたコイル導体６１の回りにプリプレグテープ２０をマイカ面が導体６２側になるように重ね巻きして絶縁体１を設ける。例文帳に追加

Coil conductors 61 performed a strand insulation 63 are respectively bundled around coil conductors 62 and a prepreg tape is lap-wound around the bundled coil conductors 61 in such a way that a mica surface faces the sides of the conductors 62 to provide an insulator 1. - 特許庁

導体100を複数の分割素線100A、100Bで構成し、各分割素線100A、100Bに芯線絶縁被膜を形成することで、各分割素線間を電気的に絶縁し、大きな渦電流が導体断面に発生することを抑制する。例文帳に追加

By constituting the conductor 100 the plurality of divided element wires 100A, 100B and forming the core wire insulation coating on each divided element wire 100A, 100B, between each divided element wire is electrically insulated to suppress a large eddy current from occurring in a conductor cross-section. - 特許庁

複数の素線が撚り合わせてなる撚線導体の外周に絶縁層が設けられて、前記撚線導体の素線相互間の空隙部および前記撚線導体と絶縁層間の空隙部に水密コンパウンドが満たされている水密絶縁電線において、前記素線の表面粗さ（Ｒａ）が０．１μｍより大きいことを特徴とする水密絶縁電線で解決される。例文帳に追加

With he watertight insulated wire provided with an insulated layer at an outer periphery of a stranded conducting wires composed of a plurality of element wires and filled with a watertight compound in a gap between element wires themselves of the stranded conducting wires and between the stranded conducting wires and the insulated layer, surface roughness (Ra) is larger than 0.1 μm. - 特許庁

各分割素線100A、100Bは、導体芯線110A、110Bと、導体芯線110A、110Bを覆う芯線絶縁被膜（酸化膜120A、120B）とから構成される。例文帳に追加

Each divided element wire 100A, 100B comprises a conductor core wire 110A, 110B and a core wire insulation coating (oxide films 120A, 120B) covering the conductor core wire 110A, 110B. - 特許庁

ＴＦＴアレイ基板２００は、基板１０上に半導体層１、ゲート絶縁膜２、走査線３及び容量線３ｂ、平坦化処理された層間絶縁膜４、層間絶縁膜７、画素電極９ａが順次積層されて構成される。例文帳に追加

The TFT array substrate 200 is formed by successively laminating a semiconductor layer 1, gate insulating film 2, scanning line 3 and capacitor line 3b, flattened interlayer insulating film 4, interlayer insulating film 7 and pixel electrodes 9a on a substrate 10. - 特許庁

可撓性絶縁基材と、可撓性絶縁性基材上に整列して設けられた複数本の導体配線２と、各導体配線の半導体素子４を搭載する領域に位置する端部に設けられた突起電極３とを備える。例文帳に追加

The wiring board is provided with a flexible insulating substrate, a plurality of conductor wirings 2 arranged in line on the flexible insulating substrate, and a projection electrode 3 which is located at ends in an area wherein semiconductor elements 4 of the respective conductor wirings are mounted. - 特許庁

複数の素子電極１１が配列された半導体素子１０の主面上に形成された第１絶縁膜１９と、第１絶縁膜１９上に形成された第１配線層２８と、第１配線層２８を覆うように第１絶縁膜１９上に形成された第２絶縁膜２２と、第２絶縁膜２２上に形成された第２配線層３３を備える半導体装置である。例文帳に追加

The semiconductor device includes a first insulating film 19 formed on the main surface of a semiconductor element 10 where a plurality of element electrodes 11 are arranged, a first conductor layer 28 formed on the film 19, a second insulating film 22 formed on the film 19 so as to cover the layer 28, and a second conductor layer 33 formed on the film 22. - 特許庁

素子領域の形成された半導体基板表面に、層間絶縁膜と配線層とを備えた半導体装置であって、前記層間絶縁膜のうち、前記半導体基板端縁部で、少なくとも前記配線層と当接する、不純物を含む層間絶縁膜が、除去されている。例文帳に追加

Among the interlayer insulating films, an interlayer insulating film containing impurities is removed which abuts on the wiring layer at least at the edge of the semiconductor substrate. - 特許庁

次に、酸化絶縁膜９が形成されたソース・ドレイン電極配線７間に窒素プラズマを照射し、半導体層４と酸化絶縁膜９界面に窒化絶縁膜１１を設ける。例文帳に追加

Then a nitrogen plasma is projected between the source/drain electrode wirings 7 where the oxidized insulating film 9 is formed, and a nitride insulating film 11 is provided at the interface between a semiconductor layer 4 and the oxidized insulating films 9. - 特許庁

素線絶縁されたコイル導体１４をコイル形状に巻回した後、静電スプレー法により、スプレーガン３２で、粉体絶縁塗料３４を吹き付けて、コイル外周に電気絶縁層３６を形成する。例文帳に追加

A coil conductor 14 insulated with a strand is wound into a coil form and thereafter, and an insulating powder coating 34 is sprayed on the conductor 14 with a spray gun 32 by an electrostatic spray method to form an electrical insulating layer 36 on the outer periphery of a coil. - 特許庁

中心導体１１上に、絶縁長尺体の巻回等により形成された絶縁層１２を設け、さらに導体素線の編組により形成した外部編組導体層１３、保護シース１４を設ける。例文帳に追加

An insulating layer 12 formed by winding or the like of an insulating long body is provided on a central conductor 11, and furthermore, the external braided conductor layer 13 formed by braiding conductive element wires and a protective sheath 14 are provided. - 特許庁

本発明の実施の形態による半導体装置は、表面に半導体素子を有する半導体基板と、前記半導体基板上に形成された配線と、前記配線の下側に接続されるビアと、前記ビアと同じ層に形成された第１の絶縁膜と、前記第１の絶縁膜と前記配線との間、および前記第１の絶縁膜と前記ビアとの間に一体に形成された第２の絶縁膜と、を有する。例文帳に追加

The semiconductor device includes: a semiconductor substrate having a semiconductor device on a surface thereof; an interconnection formed on the semiconductor substrate; a via connected to the under side of the interconnection; a first insulating film formed on the same layer of the via; and a second insulating film integrally formed between the first insulating film and the interconnection, and between the first insulating film and the via. - 特許庁

金属配線同士の間に絶縁物質を埋め込んで電気的に絶縁させる過程において、間隔の狭い金属配線同士の間にもボイドなく容易に絶縁物質を埋め込むことが可能な半導体素子の層間絶縁膜形成方法を提供すること。例文帳に追加

To provide a method of forming an interlayer insulation film of semiconductor device which allows easily embedding of an insulation material between metal wirings having narrow spacing without generating a void in a process of embedding an insulation material between metal wirings for electrical insulation. - 特許庁

極細電線１１は、３本の素線１２を撚り合わせてなる導体１３と、この導体１３を被覆する絶縁体１４とを備えて構成されている。例文帳に追加

The extra fine electric wire 11 is structured by including a conductor 13 formed by twisting three wires 12, and an insulator 14 for covering the conductor 13. - 特許庁

半導体素子用超低誘電多孔性配線層間絶縁膜およびその製造方法ならびにそれを用いた半導体素子例文帳に追加

ULTRA-LOW DIELECTRIC POROUS WIRING INTERLAYER DIELECTRIC FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE USING THE FILM - 特許庁

導体上に発泡度７０％以上の超々高発泡ふっ素樹脂絶縁層が被覆してあり、且つ該超々高発泡ふっ素樹脂絶縁層上に極薄樹脂テープ巻層が巻回して成ることを特徴とする超々高発泡ふっ素樹脂絶縁電線及びこの超々高発泡ふっ素樹脂絶縁電線を線芯として用いて成る超々高発泡ふっ素樹脂絶縁ケーブルにある。例文帳に追加

This is an ultrahigh foaming fluororesin insulating wire in which an ultrahigh forming fluororesin insulating layer of 70% or more of the degrees of foaming is coated over the conductor and an ultrathin resin tape wound layer is wound over the ultrahigh foaming fluororesin insulating layer, and an ultrahigh foaming fluororesin insulating cable using this ultrahigh fluororesin insulating wire as a core wire is also provided. - 特許庁

撚線導体と絶縁体間の密着強度を高めると共に、素線の強度及びはんだぬれ性の低下、変色及び腐食を防止でき、且つ端末加工性に富んだ絶縁被覆撚線導体を提供する。例文帳に追加

To provide an insulation coating stranded wire conductor, in which the adhesive strength between the stranded wire conductor and an insulator is enhanced, and reduction in element wire strength, solder wettability, discoloration and corrosion can be prevented, and which is rich in the terminal workability. - 特許庁

絶縁被覆２が切断された箇所では、撚線導体１の素線１ｓ間の隙間、撚線導体１の外周面および絶縁被覆２の切断面間の隙間が止水用樹脂３で埋められて止水部が形成されている。例文帳に追加

Water cut-off parts are formed by filling gaps among element wires 1s of the stranded wire conductor 1, gaps between peripheral surfaces of the stranded wire conductor 1 and the insulation coating 2, and gaps between cut surfaces of the insulation coating 2, with resin 3 for water cut-off. - 特許庁