「光電流増倍」に関連した英語例文の一覧と使い方(2ページ目) - Weblio英語例文検索

外部発光素子１０から出射された書込み光が、光書込み表示素子７に受光されると、キャリアが光導電層の電流増幅機構によって増倍され、エレクトロクロミック層に電圧が印加されて、書込み光の受光部分のみに発消色反応が生じて表示が行われる。例文帳に追加

When the addressing light emitted from the external light emitting element 10 is accepted by the photo-addressable display element 7, the carrier is multiplied by the current amplification mechanism of the photoconductive layer and a voltage is applied on the electrochromic layer to cause the developing or erasing reaction only in the part where the addressing light is accepted and to display an image. - 特許庁

半導体受光素子（ＡＰＤ）１１では、ｎ−ＩｎＧａＡｓＰ光吸収層２３とｎ−ＩｎＰ増倍層２５との間に、低キャリア濃度又はノンドープのＩｎＰトンネル電流抑制層２４が形成されているため、ヘテロ界面近傍でのキャリア濃度が抑えられる。例文帳に追加

In the semiconductor light-receiving element (APD: avalanche photodiode) 11, a low carrier-concentration or undoped InP tunnel-current suppression layer 24 is formed between an n-InGaAsP optical absorption layer 23 and an n-InP multiplication layer 25, and the concentration of carriers near a hetero-interface is suppressed. - 特許庁

光通信の分野において、印加されるバイアス電圧に応じて電流増倍率が変化する光電変換素子のバイアス電圧を受信信号の光強度に応じて変更することにより、光強度が異なる光信号を確実に受信できるようにした光信号受信方法、光信号受信装置、光通信装置、及び光通信システムの提供を目的とする。例文帳に追加

To provide an optical signal receiving method, an optical signal receiver, an optical communication device, and an optical communication system in which an optical signal having different light intensity can be surely received by changing the bias voltage of a photoelectric transducer for changing a current amplification factor in accordance with impressed bias voltage on the basis of the light intensity of the received signal in the field of optical communication. - 特許庁

光電流増倍層２はＭｅ−ＰＴＣとＰｈＥｔ−ＰＴＣの共蒸着薄膜（膜厚５００ｎｍ）からなリ、その両側をＩＴＯ電極４と膜厚２０ｎｍのＡｕ電極６とでサンドイッチ状に挟んでセルを構成しており、ガラス基板１０により支持している。例文帳に追加

A photocurrent multiplying layer 2 is formed of a coevaporation film (a film thickness of 500 nm) of Me-PTC and PhEt-PTC, its both sides are nipped in a sandwich form between an ITO electrode 4 and an Au electrode 6 with a film thickness of 20 nm to constitute a cell, and the cell is supported by a glass substrate. - 特許庁

これにより、光電子増倍管１１のアノード電流Ｉａに対応した信号電圧Ｖout がログアンプＬｇから対数特性で出力されるので、線形特性のままこのような電圧が出力される場合に比べて、対数変換されて圧縮されるぶん、ダイナミックレンジを拡大できる。例文帳に追加

By this, since the signal voltage Vout corresponding to the anode current Ia of the photomultiplier tube 11 is output in logarithmic characteristics from the log amplifier Lg, compared with the case in which such a voltage is output still in linear characteristics, all the more because of logarithmic conversion and compression, the dynamic range is expanded. - 特許庁

この光受信装置は、前記のＡＰＤ１１に流れる電流をモニタする第１のモニタ手段と、前記のＰＩＮ−ＰＤ３１に流れる電流をモニタする第２のモニタ手段と、第１のモニタ手段と第２のモニタ手段に基づいてＡＰＤ１１の増倍率が所定の値になるようにバイアス電圧を制御する制御手段２０と、を備えている。例文帳に追加

The optical receiver includes first monitor means for monitoring a current flowing through the APD 11; a second monitor means for monitoring a current flowing through the PIN-PD 31; and control means 20 for controlling the bias voltage such that an amplification rate of the APD 11 becomes a predetermined value based on the first monitor means and the second monitor means. - 特許庁

互いに異なる波長域の光により励起されて光電流増倍現象を示す２種類の有機半導体層を積層したヘテロ接合体にさらに有機電界発光素子を積層一体化した構造を持つ多層有機薄膜構造、及びその多層有機薄膜構造に電圧を印加する電極を備えた有機光演算素子８０に高電圧を印加して発光させておく。例文帳に追加

An organic optical operation element 80 which has the multilayered organic thin-film structure having a structure obtained by laminating and integrating an organic electric field light emitting element to a heterozygote laminated with two kinds of organic semiconductor layers indicating a photocurrent multiplication phenomenon when excited by light of wavelength regions different from each other and electrodes for impressing a voltage to the multilayered organic thin-film structure is kept to emit light by applying the high voltage thereto. - 特許庁

半絶縁性の埋込ガードリング層を有するＡＰＤに対して、光結合の良否判定を容易にするとともに、増倍率の設定を高精度化し、低暗電流かつ高信頼性を有する埋込メサ型ＡＰＤとそれを用いた高感度な光受信モジュール、光受信装置を安価に提供する。例文帳に追加

To provide at a low cost a buried mesa APD having a low dark-current and high reliability wherein the quality judgement of the optical coupling of the APD having a semi-insulating buried guard ring layer is facilitated and the setting of its multiplication factor is made accurate; to provide at a low cost a highly sensible optical receiving module and optical receiver which use the buried mesa APD. - 特許庁

光電流増倍素子１は、素子基板２上のＩＴＯ電極３と、ＩＴＯ電極３上のキャリアー選択性のあるＴＡＺ層４と、ＴＡＺ層４上のＮＴＣＤＡ層５と、ＮＴＣＤＡ層５上のＡｕ電極６と、Ａｕ電極６に＋電圧を印加しＩＴＯ電極３に−電圧を印加する駆動電源１０とを備える。例文帳に追加

This element 1 is equipped with an ITO electrode 3 on an element board 2, a TAZ layer 4 having carrier selectivity on the ITO electrode 3, an NTCDA(naphthalene tetracarboxylic acid) layer 5 on the TAZ layer 4, an Au electrode 6 on the NTCDA layer 5, and a drive power source 10 for applying a positive voltage to the Au electrode 6 and applying a negative voltage to the ITO electrode 3. - 特許庁