周方向欠陥の英語

超音波を装置軸心方向にしか発射できず、被検体外周の欠陥検出が難しいネジ歯面内欠陥検出に関して、従来装置の不具合を解消できる超音波探傷装置を提供する。例文帳に追加

To provide an ultrasonic inspection device capable of removing deficiency of a conventional device, concerning flaw detection in a screw tooth flank in which an ultrasonic wave can be emitted only in the device axial center direction and flaw detection of the test object circumference is difficult. - 特許庁

２乗和処理により、画像の輝度情報の符号が反転するので、欠陥のエッジの周囲にそって明のリング状の画像部分が形成され、方向性の無い欠陥像が撮像される。例文帳に追加

Since the sign of the luminance information of the image is inverted by the sum-of-squares processing, a bright ring-like image part is formed along the periphery of the edge of the defect, and the image of the defect free from directivity is picked up. - 特許庁

被検体に存在する周期性欠陥を検出するための信号処理方法であって、前記周期性欠陥を複数周期以上含んだ測定信号を、一定間隔で区切り、前記測定信号のデータ列方向に対して直交する方向に、前記区切った測定信号を並べて２次元データ列を作成し、その２次元データ列をパターン処理して欠陥を認識する。例文帳に追加

This signal processing method for detecting the periodic defects existing in a specimen partitions measured signals including the periodic defects with a plurality of periods, at a fixed interval, arrays the partitioned measured signals along a direction orthogonal to a data sequential direction of the measured signals to prepare a two-dimensional data sequence, and pattern-processes the two-dimensional data sequence to recognize the defects. - 特許庁

具体的には、前記トレンチの狭幅領域における前記周期パターンを所定方向に整列させて実質的に欠陥の無い状態にする。例文帳に追加

Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. - 特許庁

ロール３の表面にゴミ５などが付着すると、ウエブ状物体１には、走行方向２に沿って一定の周期で欠陥４が発生する。例文帳に追加

If a dust 5 or the like adheres to the surface of a roll 3, a fault 4 is periodically generated on a web-shaped body 1 along its traveling direction 2. - 特許庁

補正手段は、欠陥画素判定部２２にて注目画素が欠陥画素であると判定され、さらに、エッジ方向判定手段２８エッジ方向でないと判定したときに、注目画素を中心に対称に配列された周辺画素の画素データから求めた補正値で補正する。例文帳に追加

The correction means makes correction by the correcting value obtained from the pixel data of circumference pixel arrayed in symmetry centering the pixel of interest when the pixel of interest is determined as a defective pixel by the defective pixel determining unit 22 and the direction is not determined as the edge direction by an edge direction-deciding means 28. - 特許庁

ＧａＮから成る半導体基板１の結晶成長面σでは、結晶欠陥の少ない平坦で結晶品質の良好な領域と、結晶欠陥集中領域とがａ軸方向において、略一定の周期Λ（≒４００μｍ）で繰り返し現れる。例文帳に追加

An area having less crystal defect that is flat and superior in crystal quality and another area having concentrated crystal defect appear repeatedly at a nearly constant cycle Λ (≈400 μm) in an (a) axis direction on the crystal growth surface σ of a semiconductor substrate 1 made of GaN. - 特許庁

本方法は、ＧａＮ層１５を透明な基板１０上に成長させる際、低欠陥密度領域と高欠陥密度領域とが交互に周期的にＧａＮ層内に形成される横方向成長の成長工程を備えた、半導体素子の作製方法である。例文帳に追加

The method has a lateral growing process in which a region having a low defect density and a region having a high defect density are formed alternately and periodically to grow a GaN layer 15 on a transparent substrate 10. - 特許庁