critical strainとは 意味・読み方・使い方

The billet is then worked at a temperature below the γ' solvus temperature of the superalloy so as to form a worked article wherein the billet is worked so as to maintain strain rates above a lower strain rate limit to control average grain size and below an upper strain rate limit to avoid critical grain growth.例文帳に追加

ビレットを次いで、超合金のγ′ソルバス温度未満の温度で加工して加工品を形成するが、その際、歪速度が平均結晶粒径を制御するための下限歪速度を超え、しかも臨界結晶粒成長を避けるための上限歪速度未満に維持されるようにビレットを加工する。 - 特許庁

In a multiple-quantum well layer of this semiconductor electroluminescent device, the value of interface strain at an interface between the well layer and the barrier layer is smaller than that of critical interface strain depending on the value of a layer thickness which is larger one out of a thickness of the well layer and that of the barrier layer.例文帳に追加

半導体発光素子の多重量子井戸層における井戸層と障壁層の界面歪の大きさが、該井戸層と該障壁層の層厚のうち大きい層厚値より定まる臨界界面歪の大きさより小さいことを特徴とする。 - 特許庁

To provide a high performance semiconductor laser by improving differential gain also while making increase of number (N_w) of quantum well layers compatible with that of strain amount (ε_w) and layer thickness (L_w) within limit of critical film thickness in a strain multiple quantum well semiconductor laser.例文帳に追加

歪多重量子井戸型半導体レーザにおいて、臨界膜厚の限界内において、量子井戸層の層数Ｎ_ｗの増加と、歪量ε_ｗ及び層厚Ｌ_ｗの増加を両立しつつ、微分利得をも向上させることによって、高い特性を有する半導体レーザを提供する。 - 特許庁

The spun-dyed polypropylene-based fiber to which is stuck 0.1-5.0 mass% of an fishing oil in which the critical strain value of ABS resin by the resistance test by a 1/4 ellipse method is ≥0.30% value.例文帳に追加

耐薬品性試験「１／４楕円法」により、ＡＢＳ樹脂の臨界歪み値が０．３０％以上の値となる油剤が０．１〜５．０質量％付着してなる原液着色ポリプロピレン系繊維。 - 特許庁

A luminous semiconductor device is formed in the active area of a group III nitride and in the vicinity of the area, and contains a group III nitride layer having a thickness exceeding a critical thickness to loosen strain in the group III nitride layer.例文帳に追加

発光半導体デバイスが、ＩＩＩ族窒化物の活性領域と、該活性領域の近くに形成され、ＩＩＩ族窒化物層内の歪みの緩和のために臨界厚さを超える厚さを有するＩＩＩ族窒化物層とを含む。 - 特許庁

To provide a low-cost semiconductor substrate of high throughput and a method for manufacturing it in which a high degree of relaxation is achieved in a strain SiGe film, even when the SiGe film having a thickness thinner than that of a critical film of high Ge concentration is formed on a substrate.例文帳に追加

基板上に高濃度のＧｅ濃度を有する臨界膜厚以下の歪ＳｉＧｅ膜を有する場合でも、このＳｉＧｅ膜において高い緩和度を達成することができ、さらにスループットが高く、安価な、半導体基板及びその製造方法を提供すること。 - 特許庁

The method of evaluating the high temperature embrittlement of the continuous cast slab is the method for evaluating the occurrence of the transverse crack on the continuous cast slab, and based on the premeasured critical strain for crack formation in steel of the same steel grade as the cast slab during casting, the transverse crack sensibility in the cast slab is evaluated.例文帳に追加

本発明の連続鋳造鋳片の高温脆化評価方法は、連続鋳造鋳片の横割れの発生を評価する高温脆化評価方法であって、鋳造中の鋳片と同一鋼種において予め測定した割れ発生限界歪に基づいて、鋳片の横割れ感受性を評価する。 - 特許庁

To provide a method for efficiently producing, on a continuous substrate of 1 m length or more, an oxide superconductor highly resistant to flexural strain also taking its application to superconductive coils and the like into account, furnished with an oxide superconductive layer of high crystal orientation and high critical current density.例文帳に追加

本発明は、１ｍを超える長尺の基材上に製造でき、結晶配向性に優れた臨界電流密度の高い酸化物超電導層を備え、超電導コイル等への応用も加味した曲げ歪に強い酸化物超電導導体を効率良く製造する方法の提供を目的とする。 - 特許庁