「高電位の」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

高電位側の第１入力電位（ＶＣＣ）を第Ｇ電位（Ｖ３）として供給し、低電位側の第２入力電位（ＧＮＤ）を第Ｊ電位（ＶＣ）として供給し、第３入力電位（Ｖｅｅ）を第１電位（ＶＨ）又は第Ｎ電位（ＶＬ）のいずれかとして供給する。例文帳に追加

The power source circuit is configured so as to supply a 1st input potential (VCC) of a high potential side as a Gth potential (V3), a 2nd input potential (GND) of a low potential side as a Jth potential (VC), and a 3rd input potential (Vee) as a 1st potential (VH) or an Nth potential (VL). - 特許庁

ＰＭＯＳ２１のバックゲート電位はドレイン電位あるいはソース電位のどちらか高い方に吊られ、レベルシフタ２５によりゲート電位のＨレベルもドレイン電位あるいはソース電位のどちらか高い方に吊られる。例文帳に追加

The back gate of the PMOS 21 is pulled up by its drain and source potentials, whichever higher, and a level shifter 25 keeps the H-level of the gate potential also pulled up to the drain and source potentials, whichever higher. - 特許庁

第１駆動電圧は、第１電極の電位である第１電位が、第２電極の電位である第２電位よりも高い。例文帳に追加

In the first driving voltage, a first potential as a potential of the first electrode is higher than a second potential as a potential of the second electrode. - 特許庁

導体ＣＬＧには低電位側の電源電位が印加され、導体ＣＬＶには高電位側の電源電位が印加される。例文帳に追加

Power supply potential on the lower potential side is applied to the conductor CLG, and power supply potential on a higher potential side is applied to the conductor CLV. - 特許庁

コンデンサ素子２２の耐圧は、高電位Ｖｄｄと低電位Ｖｓｓとの電位差より低く、高電位Ｖｄｄと中間電位Ｖｃｅとの電位差以上あればよい。例文帳に追加

The withstanding voltage of the capacitive element 22 is lower than a difference between a high potential Vdd and a low potential Vss and is equal to a difference between the high potential Vdd and the intermediate potential Vce or over. - 特許庁

ＬＤＭＯＳＦＥＴのベース電位とソース電位とは独立に制御され、ＬＤＭＯＳＦＥＴのオン時にはベース電位をソース電位よりも高くし、オフ時にはベース電位をソース電位と等しくする。例文帳に追加

The base potential and the source potential of the LDMOSFET are controlled independently, and the base potential is made higher than the source potential when the LDMOSFET is "on", and the base potential is made equal to the source potential when it is "off". - 特許庁

ＶＢＢ制御回路３４は、負電位である基板電位ＶＢＢを受けて電源電位ＩＮＴＶＤＤと接地電位との間の分圧電位を出力する中間電位発生回路７２と、分圧電位を受けて基板電位が所望の値に対して高いか低いかを判定するインバータ７４とを含む。例文帳に追加

A VBB control circuit 34 includes an intermediate potential generating circuit 72 for outputting a voltage divided between power source potential INTVDD and an earth voltage by receiving substrate potential VBB which is negative potential, and an inverter 74 determining whether the substrate potential VBB is high or low compared with a prescribed value, by receiving the voltage-divided potential. - 特許庁

電位設定部１１は、各電位出力端Ｄ_１〜Ｄ_ｎから、コモン電極電位Ｖ_ＣＯＭより高い電位とＶ_ＣＯＭより低い電位とを電位出力端の配置順に交互に出力する。例文帳に追加

A potential setting section 11 alternately outputs a potential higher than a common electrode potential V_COM and a potential lower than V_COM from respective potential output ends D_1 to D_n in order of arrangement of the potential output ends. - 特許庁

電源供給線の電位ＤＳの高電位Ｖｃｃから低電位Ｖｓｓへの遷移、即ち立ち下がりの過渡応答（トランジェント）を、低電位Ｖｓｓから高電位Ｖｃｃへの遷移、即ち立ち上がりの過渡応答よりも遅くする。例文帳に追加

A transition of the potential DS of the power supply line from a high potential Vcc to a low potential Vss, i.e. transient response of a fall is made slower than a transition from the low potential Vss to the high potential Vcc, i.e. transient response of a rise. - 特許庁

高速な電源電位の上昇と同様に高速な電源電位の下降を検知する電源電位検知回路を提供する。例文帳に追加

To provide a power potential detection circuit that detects a high-speed increase and a high-speed decrease in a power potential. - 特許庁

メインアイソレーション信号ＭＩＳ１、ＭＩＳ２の高電位側の電位を外部電源電位ＶＤＤ、サブアイソレーション信号ＳＩＳ１、ＳＩＳ２の高電位側の電位を外部電源電位ＶＤＤを昇圧してなる昇圧電位ＶＰＰとする。例文帳に追加

The electric potential of a high electric potential side between main isolation signal MIS1 and MIS2 is defined as external power supply potential VDD, and the electric potential of a high electric potential side between sub isolation signals SIS1 and SIS2 is defined as boosted electric potential VPP obtained by boosting the external power supply potential VDD. - 特許庁

このため、その電位はノードＮ１の電位が引き上げられたときのものよりも高くなる。例文帳に追加

Thereby, the potential is made higher than a potential to which a potential of the node 1 is raised. - 特許庁

保持容量線電位切換回路１０１が保持容量線２１７の電位を第１の電位Ｖｓｃ１から当該第１の電位Ｖｓｃ１より高い第２の電位Ｖｓｃ２に切り換えると同時に、電源電位切換回路１０２が電源線２１５の電位を第１の電源電位ＰＶｄｄ１から当該第１の電源電位ＰＶｄｄ１より低い第２の電源電位ＰＶｄｄ２に切り換える。例文帳に追加

A storage capacitor line potential switching circuit 101 switches potential of a storage capacitor line 217 from first potential Vsc1 to second potential Vsc2 higher than the first potential Vsc1, and at the same time, a power source potential switching circuit 102 switches potential of a power source line 215 from first power source potential PVdd1 to second power source potential PVdd2 lower than the first power source potential PVdd1. - 特許庁

その後、走査回路２０によって、増幅トランジスタ５のドレイン側電位を高くして読み出し信号線７の電位を上記第１の電位(Ｖg)よりも高い第２の電位(Ｖrst)にすることにより、信号電荷蓄積部３の電位をリセット直後の電位よりも高くする。例文帳に追加

The drain-side potential of the amplifying transistor 5 is made higher and the potential of the read signal line 7 is made into second potential (Vrst) higher than the first potential (Vg) thereafter by the scanning circuit 20, so that the potential of the signal charge accumulation unit 3 is made higher than a potential just after reset. - 特許庁

低電位基準回路部ＬＶの下と高電位基準回路部ＨＶの下にのみ支持基板２を残す。例文帳に追加

A support substrate 2 is left only below a low-potential reference circuit part LV and a high-potential reference circuit part HV. - 特許庁

酸化電位の低い高分子化合物、還元電位の高い高分子化合物であって発光効率の高い高分子化合物を提供する。例文帳に追加

To provide a polymeric material having a high light emitting efficiency with a low oxidation potential and a high reduction potential. - 特許庁

電位差を単位量分高めるのに必要な電気量例文帳に追加

the amount of electrical charge required to increase electric potential difference  - EDR日英対訳辞書

短時間で感光ドラムの電位を高精度に測定する。例文帳に追加

To accurately measure the potential of a photosensitive drum in a short time. - 特許庁

ノードＮ５の電位は、抵抗４３に生じる電位差分だけ出力ノードＮ１よりも高くなる。例文帳に追加

The potential of the node N5 becomes higher than an output node N1 by potential difference generated by a resistor 43. - 特許庁

インバータ３、４の高電位端７６と低電位端７５との間にはコンデンサ５が蓄積される。例文帳に追加

A capacitor 5 is arranged between the high potential end 76 and the low potential end 75 of the inverters 3, 4. - 特許庁

これにより、駆動用ＴＦＴ２１４のゲート電位が、そのソース電位に比して高くなる。例文帳に追加

Thus, the gate potential of the TFT 214 for drive becomes higher than its source potential. - 特許庁

ここで、第１の電極１０を陰極(低電位)とし、第２の電極１１を陽極(高電位)とする。例文帳に追加

The first electrode 10 is made negative (low potential) and the second electrode 11 is made positive (high potential). - 特許庁

トランジスタのゲートには、第２の高電源電位または接地電位が入力される。例文帳に追加

To the gate of the transistor, a second high power supply potential or a ground potential is input. - 特許庁

第１のリセット回路部１１ａは、高電位側電源Ｖddの中間レベル（Ｖdd／２）の第１の電位をプリチャージ電位としてリセット動作を行う。例文帳に追加

The section 11a conducts a reset operation making a first potential of an intermediate level (Vdd/2) of a high potential side power supply Vdd as a precharge potential. - 特許庁

その反転により各画素の絶対的な電位が上がっても、その電位は反転時の電位差よりも高くならない。例文帳に追加

Even when the implicit potential of each pixel is raised by the inversion, the potential does not become higher than an electric potential difference at the time of the inversion. - 特許庁

その結果、充電器プラグ離脱判定部４４の入力部の電位は、車体ボディ接地端GNDの電位よりも高電位となる。例文帳に追加

As a result, the electric potential at an input part of a charger plug separation-determining part 44 comes to be the potential higher than the electric potential of a car body ground terminal GND. - 特許庁

また、前記非画像形成領域に前記カソード側に高電位側配線と低電位側配線と前記高電位側配線と前記低電位側配線と間の電子放出素子とを備え、前記異常放電の際に前記高電位側配線と前記低電位側配線間に所定電圧を印加することを特徴とする。例文帳に追加

Moreover, the image forming device is characterized by being provided with electron emission elements between high potential side wiring and low potential side wiring to apply a prescribed voltage between the high potential side wiring and the low potential side wiring in the case of the abnormal discharge. - 特許庁

このため、リンギングにより高電位伝送線ＢＰの電位が低電位伝送線ＢＭの電位よりもある程度大きくなると、その電位差がダイオード６０の順方向降下電圧を超えた時点で、ダイオード６０がオンする。例文帳に追加

Thereby, when the potential of the high potential transmission line BP becomes larger than that of the low potential transmission line BM on some level due to ringing, the diode 60 becomes ON at the time when the potential difference exceeds the forward drop voltage of the diode 60. - 特許庁

上記第１,第２の期間でリセットゲート電位ＲＳ(i)を第１の電位(Ｖ_DD−△Ｖ)とし、第３の期間でリセットゲート電位ＲＳ(i)を第１の電位より所定電圧△Ｖ高い第２の電位Ｖ_D_Dとする。例文帳に追加

A reset gate potential RS(i) is defined as a first potential (VDD-ΔV) in the first and second periods and the reset gate potential RS(i) is defined as a second potential VDD higher than the first potential by prescribed voltage ΔV in the third period. - 特許庁

第２のリセット回路部１１ｂは、高電位側電源Ｖddレベルの第２の電位をプリチャージ電位としてリセット動作を行う。例文帳に追加

The section 11b conducts a reset operation making a second potential of the power supply Vdd level as a precharge potential. - 特許庁

第３手法は、ノズル組立体４０にバイアス電位５２を加えてノズル組立体４０の電位をアークの電位まで高めることを含む。例文帳に追加

A third solution includes increasing a potential of the nozzle assembly 40 to that of the arc by applying a bias voltage 52 to the nozzle assembly 40. - 特許庁

前記第１の低電位（Ｖｄｄ/２＋ａ）は前記第２の高電位（Ｖｄｄ/２−ａ）以上の電位に設定されている。例文帳に追加

The first low potential (Vdd/2+2) is set to a potential which is equal to or higher than the second high potential (Vdd/2-a). - 特許庁

このとき、電源電圧のローレベル電位ＶｄｄＣ＿Ｌを、ゼロ電位より高い所定の電位とする。例文帳に追加

At such a time, a low level potential VddC-L of the power supply voltage is defined as a predetermined potential higher than zero potential. - 特許庁

接地電位とランプ端子の電位差が高くならない、放電灯装置を実現する。例文帳に追加

To provide a discharge lamp device for avoiding an increase of a difference between ground potential and the potential of a lamp terminal. - 特許庁

これにより、セル面内の電位差をターン部６２側が高電位となるように変更する。例文帳に追加

By the above, a potential difference in a cell face is changed so that the potential at the turn part 62 side becomes high. - 特許庁

列電極電位指示信号出力回路１は、補正期間のうちの補正電位設定期間の間、各列電極の電位を最高輝度または最低輝度となる電位に設定する電位指示信号を出力する。例文帳に追加

The column electrode potential indicating signal output circuit 1 outputs a potential indicating signal for setting each column electrode to a potential at which the brightness becomes highest or lowest for a correction potential setting period in a correction period. - 特許庁

半導体装置１では、ＳＯＩ基板３１の裏面の電位（基板電位）がグランド電位と高圧電源電位との間の中間電位に制御される。例文帳に追加

In the semiconductor device 1, a potential (substrate potential) on a rear side of the SOI substrate 31 is controlled at an intermediate potential between a ground potential and a high-voltage power supply potential. - 特許庁

高電位側電圧供給回路１２０及び低電位側電圧供給回路１３０は、１画素を構成する色成分ごとに用意された高電位側電圧及び低電位側電圧を、色成分ごとに切り替えて抵抗回路の両端に高電位側電圧及び低電位側電圧を供給する。例文帳に追加

The high potential side voltage supply circuit 120 and the low potential side voltage supply circuit 130 supply the high potential side voltage and the low potential side voltage prepared for each of color components comprising one pixel to both terminals of the resistor circuit while switching the high potential side voltage and the low potential side voltage for each color component. - 特許庁

高電位側電圧供給回路１２０及び低電位側電圧供給回路１３０は、１画素を構成する色成分ごとに用意された高電位側電圧及び低電位側電圧を、色成分ごとに切り替えて抵抗回路の両端に高電位側電圧及び低電位側電圧を供給する。例文帳に追加

The high potential-side voltage supply circuit 120 and low potential-side voltage supply circuit 130 supply the high potential-side voltage and low potential-side voltage to both the ends of the resistance circuit by switching high potential-side voltages and low potential-side voltages prepared by color components constituting one pixel. - 特許庁

これらの電極の電位は、イオン閉じ込め電極２２の電位が、第１段ダイノード２４ａの電位よりも高く、イオントラップ電極２３の電位が、光電陰極２０の電位よりも高いかもしくは等しく、かつ、第１段ダイノード２４ａの電位よりも低く設定されている。例文帳に追加

Potential of the ion confinement electrode 22 is set higher than that of the first stage dynode electrode 24a, and the potential of the ion trap electrode 23 is set higher than or equal to that of the photocathode 20, while it is set lower than that of the first stage dynode 24a. - 特許庁

ボンドワイヤレス電源モジュールはまた高電位側素子のコレクタ２２０ａを高電位側素子のカソード２２４ａに接続させ、高電位側導電性クリップ２１８ａを介して別の電源モジュールの別の高電位側導電性クリップに電流を流す高電位側導電性クリップを備える。例文帳に追加

The bondwireless power module also includes a high potential-side conductive clip connecting a collector 220a of the high potential-side device to a cathode 224a of the high potential-side device, and supplying current through a high potential-side conductive clip 218a to another high potential-side conductive clip in another power module. - 特許庁

ツェナーダイオード23の保持電位は、各色の黒レベルと判断される電位であって可及的に高い電位である。例文帳に追加

The hold potential of the diode 23 is the potential which is judged to be the black level of each color and is made higher as much as possible. - 特許庁

ＭＯＳＦＥＴ（P4）は、下アーム側のＭＯＳＦＥＴ（N1）によって前記出力（Vout）の電位が高電位から低電位に変化する際にオンする。例文帳に追加

The MOSFET (P4) is turned on when the potential of the output (Vout) is changed from high potential to low potential by a MOSFET (N1) arranged on the lower arm side of the circuit (10). - 特許庁

次に、バックゲートにＧＮＤ電位より高い電位を印加しデータを読出す機能テストを行なう。例文帳に追加

Next, the functional test is performed for applying the potential higher than the GND potential to the back gate and for reading out the data. - 特許庁

この構造において、低電位側電極３を基準にして、高電位側電極２に正電位Ｖ_S を印加すると、渦巻き状の薄膜層６の高電位側電極２と接続する端にも電位Ｖ_S が印加され、この渦巻き状の薄膜層には均一な電位分布が形成される。例文帳に追加

In this structure, when positive potential V_S is applied to a high potential electrode 2 with reference to a low potential electrode 3, then the potential V_S is also applied to the end of the spiral thin film layer 6 connected to the high potential electrode 2, thereby forming uniform potential distribution over the spiral thin film layer. - 特許庁