「強誘電性膜」に関連した英語例文の一覧と使い方(8ページ目) - Weblio英語例文検索

半導体素子などにおける層間絶縁膜材料として、塗膜の耐クラック特性や機械的強度や誘電率特性に優れた膜形成用組成物を得る。例文帳に追加

To provide a composition for coating film formation that can form the coating film having excellent cracking resistance, mechanical strengths and dielectric properties as a material for interlayer insulation film. - 特許庁

低誘電率で、安定した絶縁性を示し、かつ、強度に優れ、膜厚や特性の不本意なばらつきが抑制された絶縁膜の形成に好適に用いることができる膜形成用組成物を提供すること。例文帳に追加

To provide a composition for forming a film, which can be suitably used for forming an insulating film which has low permittivity, a stable insulation property and excellent strength, and suppresses unexpected variation of a film thickness and characteristics. - 特許庁

均一な厚さで、塗膜の機械的強度やクラック耐性やＣＭＰ耐性に優れ、かつ低比誘電率の塗膜が得られる膜形成用組成物を得る。例文帳に追加

To obtain a film-forming composition yielding a coated film which has a uniform thickness and has an excellent mechanical strength, crack resistance and CMP resistance and a low dielectric constant. - 特許庁

ＣＦＲＡＭの強誘電体キャパシタの下部電極に対するコンタクトホール開口に際し、上部電極の一部がエッチングされることによって生じるキャパシタ特性の劣化やキャパシタリークの誘引を阻止し、強誘電体膜に加わるダメージを抑制して分極劣化を防止する。例文帳に追加

To hold back the degradation of capacitor characteristics or induction of the capacitor leakage due to etching of a part of upper electrodes in forming contact holes into lower electrodes of ferroelectric capacitors in a CFRAM, and suppress the damage to ferroelectric films to avoid the polarization deterioration. - 特許庁

複数の強誘電体キャパシタによる凹凸形状の影響を受けてキャパシタを被覆する水素バリア膜の水素拡散阻止能力が劣化すること、および強誘電体キャパシタの分極特性がばらつくことを防止する半導体記憶装置とその製造方法を提供する。例文帳に追加

To provide a semiconductor memory device that prevents the deterioration of the hydrogen diffusion blocking performance of a hydrogen barrier film covering a capacitor caused by an influence of an uneven shape by a plurality of ferroelectric capacitors, and the variation of a polarization characteristic of the ferroelectric capacitor, and to provide a manufacturing method therefor. - 特許庁

液相法において、組成制御性がよく、しかも鉛などの金属成分の再利用が可能な強誘電体形成用の前駆体組成物、該前駆体組成物の製造方法、および前駆体組成物を用いた強誘電体膜の製造方法を提供すること。例文帳に追加

To provide, in a liquid phase method, a precursor composition for forming a ferroelectric substance good in composition controllability, and capable of reuse of a metal component such as lead etc., a manufacturing method of the precursor composition, and a manufacturing method of a ferroelectric substance film using the precursor composition. - 特許庁

下部電極形成後（ステップＳ１）、不活性ガスとＯ_2ガスの混合ガス雰囲気中で所定温度まで昇温し（ステップＳ２）、その後、強誘電体膜を形成し（ステップＳ３）、上部電極形成およびパターニング等を行って（ステップＳ４，Ｓ５）、強誘電体キャパシタを形成する。例文帳に追加

After forming a lower electrode (step S1), temperature is raised up to a predetermined value in a mixture gas atmosphere of an inert gas and O_2 gas (step S2); thereafter a ferroelectric film is formed (step S3); and an upper electrode is formed and patterning and the like are executed (step S4, S5) to form the ferroelectric capacitor. - 特許庁

本発明は、プラズマを利用して強誘電体キャパシタ上部を覆う層間絶縁膜をエッチングする過程において、電子密度及びイオン密度増加による強誘電体キャパシタ特性低下を防止できる、半導体メモリ素子の製造方法を提供することを課題とする。例文帳に追加

To provide a manufacturing method of a semiconductor memory element wherein deterioration of characteristics of a ferroelectric capacitor which is to be caused by increase of electron density and ion density can be prevented in a process, in which an interlayer insulating film which covers an upper part of the ferroelectric capacitor is etched by using a plasma. - 特許庁

液相法において、組成制御性がよく、しかも鉛などの金属成分の再利用が可能な強誘電体形成用の前駆体組成物、該前駆体組成物の製造方法、および前駆体組成物を用いた強誘電体膜の製造方法を提供すること。例文帳に追加

To provide precursor compositions for forming ferroelectrics which have excellent composition controllability in a liquid phase method, and in which metal components such as lead can be reused, a method for manufacturing the precursor compositions, and a method for forming ferroelectric films using the precursor compositions. - 特許庁

本発明は、エッチングがし易いＲｕ下部電極上において優れた強誘電体諸特性をもつＰＺＴ容量のＭＯＣＶＤ法による成膜方法を示すと共に、これによって得られるＲｕとＰＺＴ界面構造を特定し、かつ強誘電体メモリデバイスに適用する。例文帳に追加

To provide a method of forming a film by MOCVD method of a PZT capacitance comprising various superior ferroelectric characteristics on an Ru lower electrode which is easy to etch and to specify an Ru-PZT interface structure obtained by the method so as to be applied to a ferroelectric memory device. - 特許庁

誘電特性、密着性、塗膜の均一性、機械強度に優れ、吸湿性を低減化した多孔質膜を形成し得る膜形成用組成物、多孔質膜とその製造方法、及びこの多孔質膜を内蔵する高性能かつ高信頼性を備えた半導体装置を提供する。例文帳に追加

To provide a composition for forming a porous film that forms a porous film having excellent dielectric characteristics, adhesiveness, coating uniformity, mechanical strength and reduced hygroscopicity and a high performance and reliable semiconductor device incorporating the porous film. - 特許庁

微細加工が困難な水素バリア膜を微小コンタクトホールエッチングすることなく、所定領域のみ導電性水素バリア層として上部の強誘電体または高誘電体からなる容量膜を含む容量素子とコンタクトプラグとを電気的に接続する。例文帳に追加

To establish an electrical connection between a capacitive element, which includes a capacitive film comprising an upside ferroelectric or highly dielectric material, and a contact plug, by converting a predetermined region of a hydrogen barrier film into a conductive hydrogen barrier layer, without etching a fine contact hole in the hydrogen barrier film which resists microprocessing. - 特許庁

高集積化し且つ高速の半導体装置の実現を可能にする低誘電率の絶縁膜の形成に有効な組成物と、これを使って得られる低誘電率且つ機械的強度の高い絶縁膜を含む高速且つ高信頼性の半導体装置を提供すること。例文帳に追加

To provide composition which is effective in forming an insulating film of low permittivity which can realize a semiconductor device of high level integration and high speed, and to provide a semiconductor device of high speed and high reliability which includes an insulating film which is obtained by using the composition and has low permittivity and high mechanical strength. - 特許庁

膜強度が高く、吸湿による誘電率上昇を防止できる低誘電率絶縁膜、寄生容量増大によるデバイス応答速度の遅延および信頼性の低下を防止できる多層配線装置およびその製造方法を提供する。例文帳に追加

To provide a low k insulating film which has high film strength and prevents increase of a dielectric constant caused by moisture absorption, to provide a multilayered wiring device which prevents delay of device response speed and deterioration of a reliability of the device, and to provide a manufacturing method thereof. - 特許庁

メモリ部のキャパシタに強誘電体膜又は高誘電体膜を使用したスタック型半導体記憶装置におけるキャパシタ特性に劣化を生ずることがなく、高集積化のための微細化が妨げられることもない構成の半導体装置及びその製造方法を提供する。例文帳に追加

To provide a semiconductor device which is constituted in such a way that the capacitor characteristic of a stack type semiconductor storage device using a ferroelectric or high dielectric film for the capacitor of its memory section is not degraded nor the micromachining of the device for a higher degree of integration is not obstructed and a method for manufacturing the device. - 特許庁

低誘電性、耐熱性、耐薬品性およびＣＭＰに耐え得る高い機械強度を有し、さらに、上層として無機系絶縁膜層が設けられた場合に密着性が高い絶縁被膜を形成することができる組成物の提供。例文帳に追加

To provide a composition having low dielectricity, heat resistance, chemical resistance and high mechanical strength capable of withstanding CMP, and capable of forming an insulating coating film having high adhesion when an inorganic insulating film layer is provided as an upper layer thereof. - 特許庁

有機溶剤に可溶で加工性に優れるとともに、硬化させて塗膜としたときの耐熱性、耐溶剤性、低誘電性及び機械的強度に優れたジイン含有（共）重合体、その製造方法及び硬化膜を提供する。例文帳に追加

To provide a diyne-containing (co)polymer which is soluble in an organic solvent and is excellent in the workability and also of which a coated and cured film has an excellent heat, resistance, solvent resistance, low dielectric and mechanical strength, and to provide a preparing process thereof and a cured film thereof. - 特許庁

水素の透過を効果的に抑制でき、水素バリア性の優れた拡散防止膜およびその製造方法を提供すると共に、安定した強誘電体特性または高誘電体特性を有するキャパシタを備えた歩留まりのよい半導体記憶素子およびその製造方法を提供する。例文帳に追加

To provide a diffusion prevention film which can effectively suppress the permeation of hydrogen and which is superior in a hydrogen barrier property, to provide a method of manufacturing the diffusion preventive film, to provide a semiconductor memory element which is equipped with a capacitor comprising a stable ferreoelectric characteristic or a high dielectric characteristic and whose yield is satisfactory, and to provide a method of manufacturing the semiconductor memory element. - 特許庁

一対の基板のそれぞれ内側に、セグメント形状のセグメント電極と対向電極とを備え、強誘電性液晶を用いた強誘電性液晶パネルであって、セグメント電極と対向電極の上には、それぞれ配向膜を設け、セグメント電極と配向膜との間、または対向電極と配向膜の間のどちらか一方にのみ絶縁膜を設ける。例文帳に追加

The ferroelectric liquid crystal panel using a ferroelectric liquid crystal including segment-like segment electrodes and counter electrodes positioned inside a pair of substrates respectively includes; oriented films on the segment electrode and the counter electrode respectively; and an insulating film provided either one of a part between the segment electrodes and the oriented film, and a part between the counter electrodes and the oriented film. - 特許庁

強誘電体キャパシタを有する半導体装置において、アモルファス層間絶縁膜と当該アモルファス層間絶縁膜内に配される導電性プラグとに跨る領域の上部に、アモルファス金属膜と導電性結晶膜と強誘電体キャパシタの下部電極とをこの順に積層する。例文帳に追加

In the semiconductor device having the ferroelectric capacitor; an amorphous metallic film, a conductive crystalline film, and a lower electrode of the ferroelectric capacitor are laminated in this order on an upper surface of a region which spreads across an amorphous interlayer insulating film and a conductive plug provided in the amorphous interlayer insulating film. - 特許庁

より高い生産性を有し、良好な特性を有する金属酸化物薄膜素子、特に強誘電体薄膜素子を製造する方法を提供することにあり、より詳細には、良好な特性を有する微細パターンを効率良く形成することが可能で、広範囲の強誘電体薄膜素子を生産性良く作製することが可能な前記素子の製造法を提供すること。例文帳に追加

To provide a method for producing a thin metal oxide film element, particularly a thin ferroelectric film element having good characteristics with higher productivity and to provide a method for producing the element by which a minute pattern having good characteristics is efficiently formed and various thin ferroelectric film elements are produced with good productivity. - 特許庁

高性能多孔性絶縁膜として期待される誘電率、機械強度を満たし、化学的安定性に優れる多孔質膜を形成し得る有機酸化ケイ素系微粒子を提供する。例文帳に追加

To provide an organic silicon oxide-based fine particles forming a porous membrane satisfying an expected dielectric constant and mechanical strength for a high performance porous insulation film and excellent in chemical stability. - 特許庁

高性能多孔性絶縁膜を得るために、期待される誘電率、機械強度を満たし、化学的安定性に優れる多孔質膜を形成できる有機酸化ケイ素微粒子等を提供する。例文帳に追加

To provide an organic silicon oxide fine particle etc. capable of forming a porous membrane satisfying an expected dielectric constant and mechanical strength to obtain a highly efficient porous insulation film and excellent in chemical stability. - 特許庁

多孔性シリカである絶縁性薄膜の比誘電率が低く、半導体素子の銅配線工程におけるＣＭＰ工程に十分耐える機械的強度を有する絶縁性薄膜を提供する。例文帳に追加

To provide an insulating thin film being porous silica which has low specific dielectric constant and mechanical strength sufficiently resistant to a CMP process in a copper wiring process of a semiconductor device. - 特許庁

十分なＣＭＰ耐性等の機械強度、及び、低誘電性、並びに、接着性に優れるシリカ系被膜を形成できるシリカ系被膜形成用組成物等を提供する。例文帳に追加

To provide such a composition for forming a silica-based coating film as capable of forming a silica-based coating film which is excellent in the mechanical strength such as sufficient resistance to CMP, low dielectric properties and also adhesive properties. - 特許庁

機械強度が十分であり、低誘電性に優れ、シリコンウエハーへの接着性に優れ、場合により電気的信頼性に優れたシリカ系被膜を容易に製造できるシリカ系被膜形成用組成物を提供する。例文帳に追加

To provide a composition for forming a silica-based film whereby a silica-based film can be readily prepared with sufficient mechanical strength, a sufficiently low dielectric property, high adhesion to a silicon wafer, and high electrical reliability in some cases. - 特許庁

十分なＣＭＰ耐性等の機械強度、及び、低誘電性、並びに、接着性に優れるシリカ系被膜を形成できるシリカ系被膜形成用組成物等を提供する。例文帳に追加

To provide a silica-based film forming composition and the like, which can form a silica-based film excellent in mechanical strength such as sufficient CMP (chemical mechanical polish) resistance, low dielectric properties, and adhesive properties. - 特許庁

十分なＣＭＰ耐性等の機械強度、及び、低誘電性、並びに、接着性に優れるシリカ系被膜を形成できるシリカ系被膜形成用組成物等を提供する。例文帳に追加

To provide a composition and the like for forming a silica-based coating film capable of forming a silica-based coating film having mechanical strengths such as sufficient CMP resistance, and excellent in low dielectric properties and adhesive properties. - 特許庁

十分なＣＭＰ耐性等の機械強度、及び、低誘電性、並びに、接着性に優れるシリカ系被膜を形成できるシリカ系被膜形成用組成物等を提供する。例文帳に追加

To provide a silica-based film forming composition and the like, which forms a silica-based film excellent in mechanical strength such as sufficient CMP (chemical mechanical polishing) resistance, low dielectric properties, and adhesive properties. - 特許庁

十分なＣＭＰ耐性等の機械強度、及び、低誘電性、並びに、接着性に優れる絶縁膜を形成できる層間絶縁膜形成用組成物等を提供する。例文帳に追加

To provide a composition for forming an interlayer insulating film and so on whereby an insulating film can be formed with high mechanical strength such as sufficient CMP resistance, a low dielectric property, and high adhesion. - 特許庁

半導体基板の上方に形成され、上部電極３０３と下部電極３０１との間に強誘電体膜（キャパシタ膜）３０２が挟持されてなるキャパシタにおいて、上部電極３０３の強誘電体膜３０２との界面に、成膜の時点で結晶化されている導電性酸化物膜３０３ａを設けるようにして、上部電極３０３と強誘電体膜３０２との界面に、結晶粒が粗大化した界面層が形成されてしまうのを回避する。例文帳に追加

A capacitor having a ferroelectric film (capacitor film) 302 that is formed above a semiconductor substrate and is sandwiched between an upper electrode 303 and a lower electrode 301, wherein a conductive oxide film 303a, which is crystallized at deposition, is provided on an interface between the upper electrode 303 and the ferroelectric film 302, thus evading the formation of an interface layer with coarsened crystal grains in the interface between the upper electrode 303 and the ferroelectric film 302. - 特許庁

低誘電率、高機械的強度を有し、疎水性の改良された多孔質膜及びその作製方法、この多孔質膜の前駆体組成物及びその調製方法、並びにこの多孔質膜を利用した半導体装置の提供。例文帳に追加

To provide a porous film having low permittivity, high mechanical strength, and improved hydrophobicity, to provide its making method, to provide a precursor composition for the porous film, to provide its preparation method, and to provide a semiconductor device using the porous film. - 特許庁

Ｓｉ基板上にエピタキシャル成長させたＴＡＮ薄膜上にさらに結晶性の良好なＴｉＯ_2薄膜をエピタキシャル成長させることにより、その上に良好なエピタキシャル強誘電体薄膜を成長させる。例文帳に追加

On a TAN thin film that is subjected to epitaxial growth on the Si substrate, a TiO2 thin film with even superior crystallizability is further epitaxially grown, thus growing the excellent epitaxial ferroelectric thin film on it. - 特許庁

半導体素子などにおける層間絶縁として、適当な均一な厚さを有する塗膜が形成可能で保存安定性に優れ、しかも塗膜の誘電率、機械的強度などに優れた膜を得る。例文帳に追加

To provide a film which is a coating film having an even and appropriate thickness and a superior dielectric constant and mechanical strength, and which has superior storage stability, as an interlayer insulation film in a semiconductor device or the like. - 特許庁

下部電極42と撥水膜44との間に、撥水膜44よりも絶縁性が高く、かつ、誘電率の高い絶縁膜43を新たに形成することにより、絶縁強度を補い、絶縁破壊を抑制する。例文帳に追加

By newly forming an insulating film 43 having higher insulating property and having a higher dielectric constant than a water repellent film 44 between a lower electrode 42 and the water repellent film 44, insulation strength is compensated and the dielectric breakdown is suppressed. - 特許庁

層間絶縁膜として低誘電率膜のように機械的強度が低い膜を用いた場合であっても配線の集積度が高く且つ信頼性を確保できる半導体装置及びその製造方法を提供する。例文帳に追加

To provide a semiconductor device having a higher degree of wiring integration and capable of ensuring reliability even if a film having a low mechanical strength such as a low permittivity film is used as an interlayer insulating film, and to provide a manufacturing method thereof. - 特許庁

強誘電体薄膜１６は、導電性薄膜１４から膜厚方向に向かって組成が変化した第１の層１８を含み、第１の層１８上に組成が一定の第２の層２０を形成する。例文帳に追加

The ferroelectrics thin film 16 contains a first layer 18 changed in composition as tending from the conductive thin film 14 toward to the thickness of the thin film, on which a second layer 20 of fixed composition is formed. - 特許庁

また、酸化物強誘電体薄膜のように、表面が露出していない場合は、該薄膜の形成前に、該薄膜を形成する下地層の表面に、同様の活性酸素を照射する。例文帳に追加

When the surface is not exposed like an oxide ferroelectric thin film, the surface of the underlayer for forming the thin film is irradiated with the active oxygen before forming the thin film. - 特許庁

ＦｅＲＡＭメモリセルの強誘電体膜からなる容量絶縁膜の膜質の劣化を防止し、ＦｅＲＡＭメモリセルの特性を向上させる技術を提供する。例文帳に追加

To provide a technology for preventing deterioration in the quality of a capacitor insulating film made of a ferrodielectric film of a FeRAM memory cell, and for improving the characteristics of the FeRAM memory cell. - 特許庁

半導体素子などにおける層間絶縁膜材料として、誘電率特性と機械的強度に優れたシリカ系膜が形成可能な膜形成用組成物を提供する。例文帳に追加

To provide a composition for film-forming, capable of forming a silica-based film excellent in dielectric constant characteristic and mechanical strength as an interlayer insulating film material in a semiconductor element, etc. - 特許庁

機械強度、均一性に優れた低誘電率の層間絶縁膜形成用組成物、該組成物を硬化して得られる層間絶縁膜および該組成物を用いた層間絶縁膜の形成方法を提供すること。例文帳に追加

To provide a composition for forming a low K interlayer insulating film with high mechanical strength and uniformity, an interlayer insulating film obtained by curing the composition, and a method of forming the interlayer insulating film using the composition. - 特許庁

半導体素子などにおける層間絶縁膜として使用するのに適し、均一な厚さに形成可能で、しかも誘電率特性、膜強度に優れた絶縁膜、およびその製造方法を提供する。例文帳に追加

To provide an insulating film which is suitable for using as an interlayer dielectric in a semiconductor element or the like, and can be formed in uniform thickness, and further, is superior in dielectric characteristics and film strength, and to provide a method of manufacturing the same. - 特許庁

スパッタリング法やＭＯＣＶＤ法などで成膜したのと同等の配向性を有した強誘電体薄膜を、スピンコート法、ＭＯＤ法などの塗布法で安価に成膜することを可能にする。例文帳に追加

To form a ferroelectric thin film having an orientation property equal to that of one film-formed by a sputtering method, an MOCVD method or the like, by a coating method such as a spin coating method or an MOD method at a low cost. - 特許庁

電子デバイスなどに用いられる誘電率、機械強度等の膜特性が良好な絶縁膜形成用組成物に関し、さらには該組成物を用いて得られる絶縁膜およびそれを有する電子デバイスを提供する。例文帳に追加

To provide a composition for forming an insulating film usable for electronic devices, having good film properties such as permittivity and mechanical strength, to provide an insulating film obtained by using the composition, and to provide electronic devices comprising the insulating film. - 特許庁

強誘電体膜上に形成される上部電極を第１の導電性酸化膜と第２の導電性酸化膜とにより構成し、前記第２の導電性酸化膜を前記第１の導電性酸化膜よりもより化学量論組成に近い組成に形成する。例文帳に追加

An upper electrode formed on a ferroelectric film is constituted of a first conductive oxide film and a second conductive oxide film, and the second conductive oxide film is formed nearer to stoichiometric composition than the first conductive oxide film. - 特許庁