「高電位」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

電源回路部は、正の電源電位よりも高い第１の電位と、負の第２の電位と、を生成する。例文帳に追加

A power circuit section generates a first potential higher than a positive power supply potential, and a second negative potential. - 特許庁

放電電圧から高電位しきい値における高電位デジタル信号と、低電位しきい値における低電位デジタル信号とを生成する。例文帳に追加

A high potential digital signal with a high potential threshold value and a low potential digital signal with a low potential threshold value are generated from the discharge voltage. - 特許庁

高電位側の第１入力電位（ＶＣＣ）を第Ｇ電位（Ｖ３）として供給し、低電位側の第２入力電位（ＧＮＤ）を第Ｊ電位（ＶＣ）として供給し、第３入力電位（Ｖｅｅ）を第１電位（ＶＨ）又は第Ｎ電位（ＶＬ）のいずれかとして供給する。例文帳に追加

The power source circuit is configured so as to supply a 1st input potential (VCC) of a high potential side as a Gth potential (V3), a 2nd input potential (GND) of a low potential side as a Jth potential (VC), and a 3rd input potential (Vee) as a 1st potential (VH) or an Nth potential (VL). - 特許庁

低速用高電位側ブラシ６と高速用高電位側ブラシ７とは、いずれかが選択されて高電位側電源に接続される。例文帳に追加

One of the low speed high potential side brush 6 and the high speed high potential side brush 7 is selected and connected to a high potential side power supply. - 特許庁

第１駆動電圧は、第１電極の電位である第１電位が、第２電極の電位である第２電位よりも高い。例文帳に追加

In the first driving voltage, a first potential as a potential of the first electrode is higher than a second potential as a potential of the second electrode. - 特許庁

可変電位駆動電圧は、通常モードで低電位駆動電圧とし、一斉モードでは高電位駆動電圧又は低電位駆動電圧を取り得る。例文帳に追加

The variable-potential driving voltage is low-potential driving voltage in a normal mode and is either high-potential driving voltage or low-potential driving voltage in a simultaneous mode. - 特許庁

このデジタル信号は、高レベルのときには電源電位ＶＤＤと同電位となり、低レベルのときには電源電位ＶＳＳと同電位である。例文帳に追加

An H level of the digital signal is equal to the power supply potential VDD, and an L level of the digital signal is equal to the power supply potential VSS. - 特許庁

導体ＣＬＧには低電位側の電源電位が印加され、導体ＣＬＶには高電位側の電源電位が印加される。例文帳に追加

Power supply potential on the lower potential side is applied to the conductor CLG, and power supply potential on a higher potential side is applied to the conductor CLV. - 特許庁

コンデンサ素子２２の耐圧は、高電位Ｖｄｄと低電位Ｖｓｓとの電位差より低く、高電位Ｖｄｄと中間電位Ｖｃｅとの電位差以上あればよい。例文帳に追加

The withstanding voltage of the capacitive element 22 is lower than a difference between a high potential Vdd and a low potential Vss and is equal to a difference between the high potential Vdd and the intermediate potential Vce or over. - 特許庁

ＰＭＯＳ２１のバックゲート電位はドレイン電位あるいはソース電位のどちらか高い方に吊られ、レベルシフタ２５によりゲート電位のＨレベルもドレイン電位あるいはソース電位のどちらか高い方に吊られる。例文帳に追加

The back gate of the PMOS 21 is pulled up by its drain and source potentials, whichever higher, and a level shifter 25 keeps the H-level of the gate potential also pulled up to the drain and source potentials, whichever higher. - 特許庁

ブラシ装置４は、低電位側ブラシ５と、低速用高電位側ブラシ６と、高速用高電位側ブラシとを備える。例文帳に追加

This brush device 4 has a low potential side brush 5, a low speed high potential side brush 6, and a high speed high potential side brush 7. - 特許庁

電位設定部１１は、各電位出力端Ｄ_１〜Ｄ_ｎから、コモン電極電位Ｖ_ＣＯＭより高い電位とＶ_ＣＯＭより低い電位とを電位出力端の配置順に交互に出力する。例文帳に追加

A potential setting section 11 alternately outputs a potential higher than a common electrode potential V_COM and a potential lower than V_COM from respective potential output ends D_1 to D_n in order of arrangement of the potential output ends. - 特許庁

ＬＤＭＯＳＦＥＴのベース電位とソース電位とは独立に制御され、ＬＤＭＯＳＦＥＴのオン時にはベース電位をソース電位よりも高くし、オフ時にはベース電位をソース電位と等しくする。例文帳に追加

The base potential and the source potential of the LDMOSFET are controlled independently, and the base potential is made higher than the source potential when the LDMOSFET is "on", and the base potential is made equal to the source potential when it is "off". - 特許庁

ＶＢＢ制御回路３４は、負電位である基板電位ＶＢＢを受けて電源電位ＩＮＴＶＤＤと接地電位との間の分圧電位を出力する中間電位発生回路７２と、分圧電位を受けて基板電位が所望の値に対して高いか低いかを判定するインバータ７４とを含む。例文帳に追加

A VBB control circuit 34 includes an intermediate potential generating circuit 72 for outputting a voltage divided between power source potential INTVDD and an earth voltage by receiving substrate potential VBB which is negative potential, and an inverter 74 determining whether the substrate potential VBB is high or low compared with a prescribed value, by receiving the voltage-divided potential. - 特許庁

高速且つ高精度な電位測定を行うことができる電位測定装置を提供する。例文帳に追加

To provide a potential measuring device capable of performing high speed and highly accurate potential measurement. - 特許庁

高帯電性、高感度、低残留電位、電位安定性に優れた電子写真感光体を提供する。例文帳に追加

To provide an electrophotographic photoreceptor high in chargeability and sensitivity and low in residual potential and potential stability. - 特許庁

高速な電源電位の上昇と同様に高速な電源電位の下降を検知する電源電位検知回路を提供する。例文帳に追加

To provide a power potential detection circuit that detects a high-speed increase and a high-speed decrease in a power potential. - 特許庁

メインアイソレーション信号ＭＩＳ１、ＭＩＳ２の高電位側の電位を外部電源電位ＶＤＤ、サブアイソレーション信号ＳＩＳ１、ＳＩＳ２の高電位側の電位を外部電源電位ＶＤＤを昇圧してなる昇圧電位ＶＰＰとする。例文帳に追加

The electric potential of a high electric potential side between main isolation signal MIS1 and MIS2 is defined as external power supply potential VDD, and the electric potential of a high electric potential side between sub isolation signals SIS1 and SIS2 is defined as boosted electric potential VPP obtained by boosting the external power supply potential VDD. - 特許庁

電源供給線の電位ＤＳの高電位Ｖｃｃから低電位Ｖｓｓへの遷移、即ち立ち下がりの過渡応答（トランジェント）を、低電位Ｖｓｓから高電位Ｖｃｃへの遷移、即ち立ち上がりの過渡応答よりも遅くする。例文帳に追加

A transition of the potential DS of the power supply line from a high potential Vcc to a low potential Vss, i.e. transient response of a fall is made slower than a transition from the low potential Vss to the high potential Vcc, i.e. transient response of a rise. - 特許庁

保持容量線電位切換回路１０１が保持容量線２１７の電位を第１の電位Ｖｓｃ１から当該第１の電位Ｖｓｃ１より高い第２の電位Ｖｓｃ２に切り換えると同時に、電源電位切換回路１０２が電源線２１５の電位を第１の電源電位ＰＶｄｄ１から当該第１の電源電位ＰＶｄｄ１より低い第２の電源電位ＰＶｄｄ２に切り換える。例文帳に追加

A storage capacitor line potential switching circuit 101 switches potential of a storage capacitor line 217 from first potential Vsc1 to second potential Vsc2 higher than the first potential Vsc1, and at the same time, a power source potential switching circuit 102 switches potential of a power source line 215 from first power source potential PVdd1 to second power source potential PVdd2 lower than the first power source potential PVdd1. - 特許庁

また、前記非画像形成領域に前記カソード側に高電位側配線と低電位側配線と前記高電位側配線と前記低電位側配線と間の電子放出素子とを備え、前記異常放電の際に前記高電位側配線と前記低電位側配線間に所定電圧を印加することを特徴とする。例文帳に追加

Moreover, the image forming device is characterized by being provided with electron emission elements between high potential side wiring and low potential side wiring to apply a prescribed voltage between the high potential side wiring and the low potential side wiring in the case of the abnormal discharge. - 特許庁

高電位側電圧供給回路１２０及び低電位側電圧供給回路１３０は、１画素を構成する色成分ごとに用意された高電位側電圧及び低電位側電圧を、色成分ごとに切り替えて抵抗回路の両端に高電位側電圧及び低電位側電圧を供給する。例文帳に追加

The high potential side voltage supply circuit 120 and the low potential side voltage supply circuit 130 supply the high potential side voltage and the low potential side voltage prepared for each of color components comprising one pixel to both terminals of the resistor circuit while switching the high potential side voltage and the low potential side voltage for each color component. - 特許庁

その後、走査回路２０によって、増幅トランジスタ５のドレイン側電位を高くして読み出し信号線７の電位を上記第１の電位(Ｖg)よりも高い第２の電位(Ｖrst)にすることにより、信号電荷蓄積部３の電位をリセット直後の電位よりも高くする。例文帳に追加

The drain-side potential of the amplifying transistor 5 is made higher and the potential of the read signal line 7 is made into second potential (Vrst) higher than the first potential (Vg) thereafter by the scanning circuit 20, so that the potential of the signal charge accumulation unit 3 is made higher than a potential just after reset. - 特許庁

高電位側電圧供給回路１２０及び低電位側電圧供給回路１３０は、１画素を構成する色成分ごとに用意された高電位側電圧及び低電位側電圧を、色成分ごとに切り替えて抵抗回路の両端に高電位側電圧及び低電位側電圧を供給する。例文帳に追加

The high potential-side voltage supply circuit 120 and low potential-side voltage supply circuit 130 supply the high potential-side voltage and low potential-side voltage to both the ends of the resistance circuit by switching high potential-side voltages and low potential-side voltages prepared by color components constituting one pixel. - 特許庁

電位差を単位量分高めるのに必要な電気量例文帳に追加

the amount of electrical charge required to increase electric potential difference  - EDR日英対訳辞書

短時間で感光ドラムの電位を高精度に測定する。例文帳に追加

To accurately measure the potential of a photosensitive drum in a short time. - 特許庁

酸化電位の低い高分子化合物、還元電位の高い高分子化合物であって発光効率の高い高分子化合物を提供する。例文帳に追加

To provide a polymeric material having a high light emitting efficiency with a low oxidation potential and a high reduction potential. - 特許庁

ノードＮ５の電位は、抵抗４３に生じる電位差分だけ出力ノードＮ１よりも高くなる。例文帳に追加

The potential of the node N5 becomes higher than an output node N1 by potential difference generated by a resistor 43. - 特許庁

インバータ３、４の高電位端７６と低電位端７５との間にはコンデンサ５が蓄積される。例文帳に追加

A capacitor 5 is arranged between the high potential end 76 and the low potential end 75 of the inverters 3, 4. - 特許庁

これにより、駆動用ＴＦＴ２１４のゲート電位が、そのソース電位に比して高くなる。例文帳に追加

Thus, the gate potential of the TFT 214 for drive becomes higher than its source potential. - 特許庁

ＦＦＣ７１には、信号配線７５、低電位配線７６及び高電位配線７８が形成されている。例文帳に追加

In the FFC 71, signal wiring 75, low-potential wiring 76 and high-potential wiring 78 are formed. - 特許庁

昇圧電位を受けて高速に出力電位を変化させることができるアンプ回路を提供する。例文帳に追加

To provide an amplifier circuit in which an output potential can be varied at high speed by receiving a boosting potential. - 特許庁

このため、その電位はノードＮ１の電位が引き上げられたときのものよりも高くなる。例文帳に追加

Thereby, the potential is made higher than a potential to which a potential of the node 1 is raised. - 特許庁

低電位基準回路部ＬＶの下と高電位基準回路部ＨＶの下にのみ支持基板２を残す。例文帳に追加

A support substrate 2 is left only below a low-potential reference circuit part LV and a high-potential reference circuit part HV. - 特許庁

ここで、第１の電極１０を陰極(低電位)とし、第２の電極１１を陽極(高電位)とする。例文帳に追加

The first electrode 10 is made negative (low potential) and the second electrode 11 is made positive (high potential). - 特許庁

ＭＲＩ装置１００が、低電位側導電体と高電位側導電体とを備える。例文帳に追加

The MRI apparatus 100 includes a low-potential side conductor and a high-potential side conductor. - 特許庁

接地電位とランプ端子の電位差が高くならない、放電灯装置を実現する。例文帳に追加

To provide a discharge lamp device for avoiding an increase of a difference between ground potential and the potential of a lamp terminal. - 特許庁

ステップＳ２において、ＤＡ変換器に入力される高電位と低電位とをそれぞれ選択する。例文帳に追加

In a step S2, high potential and low potential to be inputted in a DA converter are selected, respectively. - 特許庁

次に、バックゲートにＧＮＤ電位より高い電位を印加しデータを読出す機能テストを行なう。例文帳に追加

Next, the functional test is performed for applying the potential higher than the GND potential to the back gate and for reading out the data. - 特許庁

信号を高電位側、低電位側に対しバランス良く対称に増幅する。例文帳に追加

To symmetrically amplify a signal to a high potential side and a low potential side in a well-balanced manner. - 特許庁

トランジスタのゲートには、第２の高電源電位または接地電位が入力される。例文帳に追加

To the gate of the transistor, a second high power supply potential or a ground potential is input. - 特許庁

これにより、セル面内の電位差をターン部６２側が高電位となるように変更する。例文帳に追加

By the above, a potential difference in a cell face is changed so that the potential at the turn part 62 side becomes high. - 特許庁

また、基板電位を電源電位にしたときと比較して、ｎＭＯＳを高耐圧化することができる。例文帳に追加

Furthermore, the nMOS can be made highly voltage-resistant in comparison with a case where the substrate potential is set to the power supply potential. - 特許庁

列電極電位指示信号出力回路１は、補正期間のうちの補正電位設定期間の間、各列電極の電位を最高輝度または最低輝度となる電位に設定する電位指示信号を出力する。例文帳に追加

The column electrode potential indicating signal output circuit 1 outputs a potential indicating signal for setting each column electrode to a potential at which the brightness becomes highest or lowest for a correction potential setting period in a correction period. - 特許庁

電位勾配形成部３は、第２方向に沿って低くされた電位勾配を形成する第１電位勾配形成領域と、第２方向に沿って高くされた電位勾配を形成する第２電位勾配形成領域とを有する。例文帳に追加

The potential gradient formation part 3 has a first potential gradient formation region forming a potential gradient decreasing along the second direction, and a second potential gradient formation region forming a potential gradient increasing along the second direction. - 特許庁