「高電位」に関連した英語例文の一覧と使い方(7ページ目) - Weblio英語例文検索

接地電極には接地電位が与えられ、接地電極と対向電極との間には接地電極の電位より対向電極の電位が高くなる直流パルス電圧が繰り返し印加される。例文帳に追加

A ground potential is applied to a ground electrode, and DC pulse voltage at which the potential of a counter electrode is made higher than the potential of the ground electrode is repeatedly applied to between the ground electrode and the counter electrode. - 特許庁

筋電位検出電極の位置が多少ずれたとしても筋電位を感度よく検出でき、取扱いが容易で汎用性が高い筋電位センサを提供する。例文帳に追加

To provide a myogenic potential sensor which can detect a myogenic potential sensitively even if a myogenic potential detecting electrode takes a bad position more or less, and is easy to handle and high in versatility. - 特許庁

また、通信線Ｌ１，Ｌ２には、通信線Ｌ１，Ｌ２の電位に対し一定電圧だけ高い目標電位Ｖ１，Ｖ２及び一定電圧だけ低い目標電位Ｖ３，Ｖ４を生成する電圧源１１〜１４を設ける。例文帳に追加

In addition, voltage sources 11 to 14 which generate target potential V1 and V2 higher than potential between the communication lines L1 and L2 by a specified voltage and target potentials V3 and V4 lower than the potential between the communication lines L1 and L2 by a specified voltage are arranged for the communication lines L1 and L2. - 特許庁

電位差検出部によって検出された電位差が所定の電位差より高い場合に、電力の供給が停止させられるので、電極接触部に溶着及び溶断が発生することがなくなる。例文帳に追加

Since electric power supply is stopped when the electric potential difference detected by the electric potential difference detection unit is higher than the predetermined electric potential difference, welding and fusion cutting at the electrode contact unit can be prevented. - 特許庁

クリーニングバイアスＶｃ１は感光体ドラム電位Ｖｏと同極性でＶｏより低い電位であり、Ｖｃ２は同極性でＶｏより高い電位である。例文帳に追加

The cleaning bias Vc1 is potential having the same polarity as the potential Vo of the photoreceptor drum and lower than the Vo, and the cleaning bias Vc2 is potential having the same polarity as the Vo and higher than the Vo. - 特許庁

陰電位を常時継続的に出力させることができ、また出力の高い陰電位を継続して発生させることができる、陰電位治療器を提供すること。例文帳に追加

To provide a negative electric potential therapeutic apparatus capable of constantly and sequentially outputting a negative electric potential and sequentially generating the high-output negative potential. - 特許庁

リセット期間では、リセットトランジスタからの電位の入力がｎｏｄｅＤにおいては支配的となり、ｎｏｄｅＤの電位が選択トランジスタのゲート電位より高くなった時点で選択トランジスタはオフする。例文帳に追加

In the reset period, input of a potential from the reset transistor is dominant in a node D, and when the potential in the node D exceeds a gate potential of a selection transistor, the selection transistor is turned off. - 特許庁

生体を高電圧によるプラス電位とマイナス電位をかける電界内に置くことにより治療する電位治療器において、生体イオンの急激な移動により発生する不快感を防止する。例文帳に追加

To prevent a sense of discomfort generated by abrupt movements of biological ions in the potential treatment apparatus for treating a living body by putting it in an electric field charged by a positive potential and a negative potential. - 特許庁

さらに、各ソース線に接地電位よりも高く電源電位よりも低いソースバイアス電位を供給する複数のソースバイアス制御回路１２１が各ソース線に対応して設けられる。例文帳に追加

Moreover, a plurality of source bias control circuits 171 which supply source bias potentials higher than a ground potential and lower than a power source potential to the respective source wires are provided corresponding to the respective source wires. - 特許庁

検出用電極は、第１電位の液体を吐出するノズルと所定間隔を空けて対向し、電源によって第１電位よりも高い第２電位とされる。例文帳に追加

The electrode for detection faces a nozzle for ejecting a liquid with a first electric potential at a specified interval and is made to have a second electric potential higher than a first electric potential by the electric power source. - 特許庁

短絡検出回路５は、昇圧回路部３ａの出力端とコンバータ回路１の高電位側の出力端との間の電位差を検出しており、２点間の電位差の変化から短絡の発生を検出する。例文帳に追加

A short circuit detection circuit 5 detects the potential difference between the output end of the boosting circuit 3a and the output end on high potential side of the converter circuit 1, and detects the occurrence of short circuit from the change of the potential difference between two points. - 特許庁

パワーモジュールに大きな電流を流すインバータ装置であっても、高電位側ＩＧＢＴを駆動する信号の基準電位端子とゲート駆動ＩＣの基準電位端子間の逆サージを効果的に回避する。例文帳に追加

To effectively avoid inverse surge between a reference potential terminal of a signal for driving a high potential side IGBT and a reference potential terminal of a gate drive IC even in an inverter apparatus which feeds a large current to a power module. - 特許庁

試料の絶縁体に帯電した帯電電位をより正確に測定する帯電電位測定機能、及び測定した帯電電位の情報を用いて試料上のパターンを高精度に計測するシステムを提供する例文帳に追加

To provide a charged potential voltage measuring function for accurately measuring a potential voltage charged on an insulating body of a sample, and to provide a system for precisely measuring a pattern on the sample using information about charged potential which is measured. - 特許庁

第１及び第２端子１，２が短絡した場合には第２端子２の電位が上昇してＶ_LIMITよりも大きくなるような第２端子２の電位よりも高い電位が第１端子１に与えられる。例文帳に追加

In a case when first and second terminals 1 and 2 are short-circuited, a potential which raises the potential of the second terminal 2 to be larger than a prescribed value and is higher than the potential of the second terminal is given to the first terminal 1. - 特許庁

さらに、ＭＯＳ容量ＭＯＳ１の上部電極を構成する電極Ｅ１を低電位（例えば、ＧＮＤ）に接続し、ＭＯＳ容量ＭＯＳ２の上部電極を構成する電極Ｅ３を高電位（例えば、電源電位）に接続する。例文帳に追加

In addition, an electrode E1 constituting an upper electrode of the MOS capacitor MOS1 is connected to the low potential (for instance, GND), and an electrode E3 constituting an upper electrode of the MOS capacitor MOS2 is connected to the high potential (for instance, power potential). - 特許庁

不純物拡散層へ電位を与える単位で、ウエルへ同一電位を与えることができ、ウエル電位を安定化し、高集積化された半導体装置及びその製造方法を提供する。例文帳に追加

To provide a highly integrated semiconductor device, and its fabricating method, in which the identical potential can be applied to a well in units of potential being applied to an impurity diffusion layer and the well potential can be stabilized. - 特許庁

ＭＯＳＦＥＴＱ２のゲート電位に対してソース電位（電極１０の電位）がＶｆ以上高くなるとダイオード２０が導通し、ＭＯＳＦＥＴＱ２のゲート・ソース間電圧はＶｆ以下に制限される。例文帳に追加

When a source potential (a potential of the electrode 10) becomes higher than the gate potential of the MOSFET Q2 by Vf or more, the diode 20 is electrified, and a voltage between the gate and the source of the MOSFET Q2 is limited to Vf or lower. - 特許庁

そして、この排出Ｔｒ２１５をＯＮしたときのチャネル電位と、転送Ｔｒ２１１をＯＮしたときのチャネル電位の両方をＰＤ２１９の完全空乏化電位よりも高くなるように設定する。例文帳に追加

Then both the channel potential which is provided when the discharge Tr 215 is turned on and the channel potential which is provided when the transfer Tr 211 is turned on are set as to be higher than the completely depleted potential of the PD 219. - 特許庁

第１シリーズレギュレータ１０の低電位側端子は、低電位側端子に仮想電源電圧生成回路５０により生成される固定電圧が印加される第１負荷の高電位側端子に接続される。例文帳に追加

A low potential side terminal of the first series regulator 10 is connected to a high potential side terminal of a first load to the low potential side terminal of which the fixed voltage generated by the virtual supply voltage generation circuit 50 is applied. - 特許庁

走査信号供給回路は、ＴＦＴをオン状態にする高電位とオフ状態にする低電位との途中に、走査信号を中間電位に所定時間だけ固定する。例文帳に追加

The scanning line supply circuit fixes the scanning signals at intermediate potential in process of high potential for making the TFT into the on state and low potential for making the TFT into an off state just for a prescribed time. - 特許庁

ステップ３で、電極１０５ｂに高電位、電極１０５ａに低電位、電極１０５ｃ、１０５ｄに中間の電位を印加し、ＯＦＦ側の電極１０５ａ，１０５ｂに発生する電界の向きをステップ１とは反対にする。例文帳に追加

At step 3, the high potential is applied to the electrode 105b; the low potential is applied to the electrode 105a; the intermediate potential is applied to the electrodes 105c, 105d; and the direction of the electric field generated across the OFF side electrodes 105a, 105b is made inverse to that at the step 1. - 特許庁

第１のトランスの１次巻線の高電位端子と、第２のトランスの１次巻線の低電位端子との電位差が該当する、電圧共振によるスイッチング電圧の波形を正弦波とする。例文帳に追加

The waveform of the switching voltage by the voltage resonance that the potential difference between the high-potential terminal of the primary winding of the first transformer and the low-potential terminal of the primary winding of the second transformer is applicable to is made a sine wave. - 特許庁

クリーニングバイアスＶｃ１０は感光体ドラム電位Ｖｏと同極性でＶｏより低い電位であり、Ｖｃ２０は同極性でＶｏより高い電位である。例文帳に追加

The cleaning bias Vc10 is potential having the same polarity as the potential Vo of the photoreceptor drum and lower than the Vo, and the cleaning bias Vc20 is potential having the same polarity as the Vo and higher than Vo. - 特許庁

第２シリーズレギュレータ２０の低電位側端子は、低電位側端子に接地電圧が印加される第２負荷の高電位側端子に接続される。例文帳に追加

A low potential side terminal of the second series regulator 20 is connected to a high potential side terminal of a second load to the low potential side terminal of which ground voltage is applied. - 特許庁

ウェハテスト時にノーマルビット線に電位を印加するパッドとダミービット線に電位を印加するパッドとを設けることにより、ノーマルビット線より高い電位をダミービット線に印加することができる。例文帳に追加

A potential being higher than that of a normal bit line can be applied to a dummy bit line by providing a pad applying a potential to a normal bit line and a pad applying a potential to a dummy bit line. - 特許庁

出力Ｖｂ１は定常バイアス電位であり、出力Ｖｂ２はスイッチ２４のオン制御から所定期間高バイアス電位であり、所定期間後に定常バイアス電位となる。例文帳に追加

The output Vb1 is at a stationary bias potential, and the output Vb2 is at a high bias potential for a predetermined period from ON-control by the switch 24, and is made to the stationary bias potential after the predetermined period. - 特許庁

ＷＳＬｊ消光期間において、最終段の走査線２１３を一旦オン電位（Ｖｏｎ）にした後に、電源線４１０の電源電位を高レベル電源電位（Ｖｃｃ＿Ｈ）に切り替える。例文帳に追加

During a WSLj extinction period, the scanning line 213 of a last stage is set to on-potential (V on), and then the power supply potential of a power supply line 410 is switched to a high-level power supply potential (Vcc_H). - 特許庁

臨界核径に近いダイヤモンド微粒子の分散液のゼータ電位と、基材表面のゼータ電位や表面電位制御することにより、ダイヤモンド微粒子の再凝集を防止し、且つ基材への高密度に定着させる。例文帳に追加

To prevent diamond fine particles from reaggregation and fix them onto a base material in a high density, by controlling the zeta potential of a dispersing liquid of the diamond fine particles having a critical nuclear diameter, and the zeta potential and surface potential of the base material. - 特許庁

駆動トランジスタに供給する電源電位を高電位と低電位で切り替えることによって発光期間／非発光期間の制御を行なう構成を採る場合において、所望の閾値補正を確実に行えるようにする。例文帳に追加

To surely make desired threshold correction when employing a configuration arranged such that control over a light-emission period/non-light-emission period is performed by switching a power source potential supplied to a driving transistor is switched between a high potential and a low potential. - 特許庁

地盤破壊・崩壊予測の信頼性を高めるため、地盤の電位差データから外的要因による電位変化を除去して、内的要因による電位変化を的確に把握するための方法を提供する。例文帳に追加

To provide a method for acquiring precisely a potential change caused by an internal factor by removing a potential change caused by an external factor from potential difference data of the ground in order to heighten reliability of ground breakage/collapse prediction. - 特許庁

電位センサ制御部１０７の高圧電源１０７ｂにより感光ドラム１の表面電位と等しい電圧を発生し、電位センサ制御部１０７の分圧出力部１０７ｂにより電圧を減衰して出力する。例文帳に追加

A voltage equal to a surface potential of the photosensitive drum 1 is generated by a high voltage power source 107b of the potential sensor control part 107 and is attenuated by a voltage dividing output part 107b of the potential sensor control part 107 and is output. - 特許庁

低電位領域Ａから高電位領域Ｃへの電源電圧の伝送と、映像信号の伝送とは、全て中間電位領域Ｂを経由する。例文帳に追加

Both of the transmission of a power source voltage from the low potential area A to the high potential area C and the transmission of a video signal are allowed to pass through the middle potential area B. - 特許庁

そして、この排出Ｔｒ２１５をＯＮしたときのチャネル電位と、転送Ｔｒ２１１をＯＮしたときのチャネル電位の両方をＰＤ２１９の完全空乏化電位よりも高くなるように設定する。例文帳に追加

Then both the channel potential when the discharge Tr 215 is turned on and the channel potential when the transfer Tr 211 is turned on are set higher than the completely depleted potential of the PD 219 so that the signal charge of the PD 219 may be transferred completely from both the transfer Tr 211 and discharge Tr 215. - 特許庁

ゲート電位の変動を“減衰させずに”かつ“遅延なく”基板電位に伝達させて高速動作を可能とし、かつゲート電位の変動が無い時における寄生ダイオードリーク電流を低減させる。例文帳に追加

To communicate variation in a gate potential to a substrate potential without attenuation and delay to enable a high-speed operation, and to reduce a parasitic diode leakage current in the case where the gate potential does not change. - 特許庁

サンプリング用トランジスタ３１がオンされたとき、即ち、走査線の電位が高電位に設定されたとき、補助容量２３１は、そこに供給される電荷を蓄え、所定の電位を保持する。例文帳に追加

When the sampling transistor 31 turns on, namely, when a scanning potential is set at a high potential, an auxiliary capacitor 231 accumulates electric charges supplied thereto and holds a prescribed potential. - 特許庁

待機時においては、ビット線ＢＬ１、／ＢＬ１をプリチャージしておき、ワード線ＷＬ１、ＷＬ２の電位を接地電位よりやや高い電位に設定する。例文帳に追加

At the time of standby, bit lines BL1, /BL1 are pre-charged and potentials of word lines WL1, /WL2 are set to a slightly higher potential than a ground potential. - 特許庁

炭化水素系の高分子電解質と、高分子電解質に含有される金属イオンと、を有し、金属イオンの標準電極電位が、水素イオンの標準電極電位より高く、かつ白金イオン（Ｐｔ^２＋）の標準電極電位より低いことを特徴とする高分子電解質組成物。例文帳に追加

The polymer electrolyte composition comprises a hydrocarbon-based polymer electrolyte and metal ions contained in the polymer electrolyte, and the standard electric potential of the metal ion is higher than that of hydrogen ion, and lower than that of platinum ion (Pt^2+). - 特許庁

第１の電圧変換回路１１は、電源電位ＧＮＤと電源電位ＶＤＤＬとの間の振幅を有する入力信号ＩＮが入力されると共に、電源電位ＶＤＤＬよりも高い電源電位ＶＤＤＨが供給される。例文帳に追加

An input signal IN having an amplitude between a power supply potential GND and a power supply potential VDDL is input to the first voltage conversion circuit 11, and a power supply potential VDDH higher than the power supply potential VDDL is supplied thereto. - 特許庁

また、コンデンサ３３の右端には、定電圧源３４から一定の正電位が付与されており、還流ダイオード２２ａのアノード端子の電位は、カソード端子の電位を基準として、常に、還流ダイオード２２ａの立ち上がり電圧よりも高い電位となっている。例文帳に追加

A constant positive potential is applied to the right end of the capacitor 33 from a constant voltage source 34, and the potential of an anode terminal of a reflux diode 22a always has a higher potential than a rising voltage of the reflux diode 22a, based on the potential of a cathode terminal. - 特許庁

流路ユニット９が電位０Ｖの低電位電極となり、共通電極１３４が電位＋１Ｖの高電位電極となるように両電極間に電界を印加し（Ｓ７）、電界を印加したままで両電極間の抵抗値を測定する。例文帳に追加

An electric field is applied between both electrodes so that the flow path unit 9 becomes the low-potential electrode of potential 0V and the common electrode 134 becomes a high-potential electrode of potential+1V (S7), and the resistance value between the both electrodes is measured while applying the electric field. - 特許庁

そして、自行ｉに属する電源電位ＤＳｉを低電位Ｖｉｎｉから高電位Ｖｃｃｐに切り替えるときに、電源供給線３２ｉ−１の電位ＤＳｉ−１を一時的に下げることで、駆動トランジスタ２２の寄生容量Ｃｄｓによる影響を抑える。例文帳に追加

When the power supply potential DSi that belongs to the own row i is switched from low potential Vini to high potential Vccp, the potential DSi-1 of the power supply line 32i-1 is temporarily decreased, thereby suppressing the influence by the parasitic capacitance Cds of the driving transistor 22. - 特許庁

流路ユニット９が電位＋５Ｖの高電位電極となり、共通電極１３４が電位０Ｖの低電位電極となるように、両電極間に電界を印加し（Ｓ３）、両電極間の抵抗値を測定した後、両電極間の電圧を解除する（Ｓ４）。例文帳に追加

An electric field is applied between both electrodes of a flow path unit 9 and a common electrode 134 so that the flow path unit 9 becomes a high-potential electrode of potential+5V and the common electrode 134 becomes a low-potential electrode of potential 0V (S3), after measuring the resistance value between the both electrodes, the voltage between the both electrodes is released (S4). - 特許庁

時刻ｔ_44以降は、映像信号線ＤＴＬ１０−１乃至１０−Ｎそれぞれの電位を基準電位Ｖｏｆｓよりも高い第２基準電位Ｖｏｆｓ２に設定しての分割閾値補正動作と、信号電位Ｖｓｉｇによる映像信号の書き込みとが、線順次に行われる。例文帳に追加

After the time t_44, respective electric potentials of picture image signal wires DTL10-1 to DTL10-N are set to the second reference electric potential Vofs2 being higher than the reference electric potential Vofs to perform divided threshold value correction operation and picture image signal writing by the signal electric potential Vsig according to the order of wires. - 特許庁

具体的には、ローレベル電位ＶｄｄＣ＿Ｌを、リセットトランジスタ５のローレベル印加時のチャネル電位や、転送ゲート２のローレベル印加時のチャネル電位や、フォトダイオード１のチャネル電位より高くすれば、雑音の少ない再生画像を読み出すことができる。例文帳に追加

Concretely, the low level potential VddC-L is made higher than a channel potential of the reset transistor 5 in low level application, a channel potential of the transfer gate 2 in low level application or a channel potential of the photo-diode 1 in low level application, thereby reading the noise-reduced regenerative image. - 特許庁

入力回路１０の入力には入力(IN)１の信号が印加されると共に入力回路１０の出力は１次側すなわち低圧側の高電位電源の電位と低電位電源の電位間でレベル変化するようにされている。例文帳に追加

A signal at an input (IN) 1 is applied to an input of the input circuit 10, and a level of the output of the input circuit 10 changes between levels of a primary side, that is, a low voltage side high level power supply and a low voltage side low level power supply. - 特許庁