「plating current」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

To provide a barrel plating device and a barrel plating method in which plating of high quality and high efficiency can be performed by improving a current density and a current distribution inside a plating bath.例文帳に追加

メッキ浴内における電流密度や電流分布を改善して、高品質で高効率のメッキを行い得るバレルメッキ装置およびバレルメッキ方法を提供する。 - 特許庁

In the electrolytic plating method, the current value in the electrolytic plating is continuously shifted toward a minus direction with the plating time.例文帳に追加

電解めっき時の電流値をめっき時間に対して連続的にマイナス方向へ増大させる電解めっき方法。 - 特許庁

At this time, the plating is performed while a magnetic field is applied into the plating solution in the direction parallel to the direction of the current flowing in the plating solution, by which the dispersion plating film is obtained.例文帳に追加

この際に、めっき液中に流れる電流の向きに平行な方向に磁場を印加しながらめっきを行うことで分散めっき皮膜を得る。 - 特許庁

Plating is conducted by changing the current density at at least two steps in an electrolytic plating step.例文帳に追加

電解めっき工程において、電流密度を少なくとも2段階に変化させてめっきを行う。 - 特許庁

SULFURIC ACID BATH FOR PLATING Sn ON COPPER ALLOY SHEET AT HIGH CURRENT DENSITY, AND METHOD FOR PLATING Sn例文帳に追加

銅合金板への高電流密度Ｓｎめっき用硫酸浴及びＳｎめっき方法 - 特許庁

A change in electrification current for each plating cell is measured by a plating rectifier and from the waveform change of the electrification current, and the position where a plating appearance defect occurs is specified.例文帳に追加

各めっきセル毎の通電電流の変化を、めっき整流器により測定し、該通電電流の波形変化により、めっき外観不良の発生箇所を特定する。 - 特許庁

By applying current to the power supply film 12, electrolytic copper plating is performed, and a Cu plating film 15 is deposited on the plating base film 14.例文帳に追加

ついで、給電膜１２に通電して電解銅メッキを行ない、メッキ下地膜１４の上にＣｕメッキ被膜１５を析出させる。 - 特許庁

The electroplating is performed by repeating an energizing cycle comprising a projection nuclei formation treatment of increasing plating current, a normal plating treatment of holding the increased plating current, and a posttreatment of lowering the held plating current for a plurality of times.例文帳に追加

この電気めっきは、めっき電流を上昇させる突起核の生成処理と、上昇させためっき電流を保持する本めっき処理と、保持しためっき電流を低下させる後処理とを有する通電サイクルを複数回繰り返して行なう。 - 特許庁

The current value to be supplied between the main substrate and a anode is dropped to a weak current or controlled to zero in the current value after the plating layer is formed and before the plating solution is discharged.例文帳に追加

メッキ層を形成後、メッキ液を排液する前に、主基板とアノード間に供給される電流値を微弱電流に落とすかあるいは電流値をゼロに制御する。 - 特許庁

Using a plating device with an anode and a cathode in which current value is adjustable, a plating film is deposited at a low current density in the initial stage, and the current density is stepwise increased to deposit a plating film.例文帳に追加

電流値を可変できるアノードとカソードを有するめっき槽を備えためっき装置を使用して、初期には低い電流密度でめっき皮膜を形成し、段階的に電流密度を高めてめっき皮膜を形成する。 - 特許庁

Impurity concentration in the plating film can be set by controlling a current density, a plating temperature and a liquid composition.例文帳に追加

めっき膜中の不純物濃度は電流密度、めっき温度、液組成などにより設定することができる。 - 特許庁

Preferably, the Sn plating layer of the negative current collector rod is formed by an electrolytic plating method.例文帳に追加

前記負極集電棒に係るＳｎメッキ層は、電解メッキ法により形成されたものであることが好ましい。 - 特許庁

The copper-zinc alloy plating is conducted at cathode current density exceeding 10A/dm^2 during plating.例文帳に追加

めっき処理の際に、１０Ａ／ｄｍ^２を超える陰極電流密度で銅−亜鉛合金めっき処理を行う。 - 特許庁

The method for manufacturing such a plated magnetic thin-film includes employing a plating treatment through applying plating current of, for instance, direct current, pulse current, bipolar pulse current, pulse adjusting current, or these combinations.例文帳に追加

このようなコバルト鉄系合金磁性めっき薄膜は、例えば、直流電流，パルス電流，両極性パルス電流，パルス調整電流またはこれらを組み合わせためっき電流を印加するめっき処理を用いて製造される。 - 特許庁

An electrode 23 of the semiconductor element 21 is connected to the constant-current circuit 31 in the electrolytic plating of electrolytic plating bump formation, and breaking is made after the electrolytic plating.例文帳に追加

電解めっきバンプ形成の電解めっき時に半導体素子２１の電極２３と定電流回路３１とを接続し、電解めっき後に遮断する。 - 特許庁

To reduce the variance in plating thickness by keeping the current density to be uniform in effecting the electrolytic plating on a silicon wafer, etc.例文帳に追加

シリコンウェハー等に電解メッキを施す際に、電流密度を均一に保ち、メッキ厚みのばらつきを小さくする。 - 特許庁

To provide a tin/copper alloy plating bath capable of depositing bright plating film in a current density region in a wide range.例文帳に追加

広範囲の電流密度領域において光沢めっき皮膜を形成できる錫／銅合金めっき浴を提供する。 - 特許庁

In 88FeNi plating bath, a 88FeNi film is prepared by DC current, and pulse plating is carried out in succession in the same bath, thus preparing a 20FeNi film.例文帳に追加

88FeNiめっき浴においてDC電流で88FeNi膜を作製し、同一浴で続けてパルスめっきを行い20FeNi膜を作製した。 - 特許庁

In the plating tank of the poststage to which plating current is reduced, galvanizing in which plating current density is 1 to 30 A/dm^2 and coating weight is 0.01 to 20 g/m^2 is performed.例文帳に追加

前記めっき電流を小さくする後段のめっき槽は、めっき電流密度が１Ａ／ｄｍ^2以上３０Ａ／ｄｍ^2以下で、付着量が０．０１ｇ／ｍ^2以上２０ｇ／ｍ^2以下の亜鉛めっきを行う。 - 特許庁

There are a semiconductor element 21, the electrolytic plating bump 28, and a constant-current circuit 31 for regularly controlling each plating current when the electrolytic plating bump is formed for each bump inside a semiconductor wafer.例文帳に追加

半導体素子２１と、電解めっきバンプ２８と、電解めっきバンプ形成時のめっき電流を個々のバンプ毎に一定に制御する定電流回路３１とを半導体ウエーハ内に備えている。 - 特許庁

Using the gold plating liquid comprising gold iodate complex ions and the nonaqueous solvent, plating electric current with pulse waves of only positive electric current or positive-negative electric current is applied in a suitable pulse electric current wave form, and gold plating is applied to opening parts 6a formed in photoresists 6 so as to form a gold bump.例文帳に追加

ヨウ化金錯イオン及び非水溶媒を含有する金メッキ液を用い、正電流のみ或いは正負電流のパルス波のメッキ電流を適切なパルス電流波形で印加してフォトレジスト６に形成された開口部６ａに金メッキを施すことで金バンプを形成する。 - 特許庁

To provide an electrolytic plating device and an electrolytic plating method capable of simply adjusting and changing an electric current shielding structure with a shielding plate and uniformizing a plating thickness.例文帳に追加

遮蔽板による電流遮蔽構造を簡易に調整・変更でき、めっき厚の均一化が図れる電解めっき装置及び電解めっき方法を提供する。 - 特許庁

Preferably, negative electrode current density is 0.5 A/dm^2-50 A/dm^2, the temperature of plating bath is 10°C-60°C, the pH of the plating bath is 4.5-6.5, and plating period is 1 minute-30 minutes.例文帳に追加

また、陰極電流密度は０．５〜５０Ａ／ｄｍ^2、めっき浴の温度は１０〜６０℃、めっき浴のｐＨは４．５〜６．５、めっき時間は１〜３０分であることが好ましい。 - 特許庁

In applying electric plating on a parent material 2, overcurrent is made to flow at an initial stage of the electric plating, and afterwards, normal current is made to flow to form a silver plating on the parent material 2.例文帳に追加

母材２に電機メッキを施す際、電気メッキの初期段階において過電流を流し、その後は通常値の電流を流して母材２に銀メッキを形成する。 - 特許庁

To provide an improved copper plating method relating to copper plating of a doped semiconductor wafer forming a front current track.例文帳に追加

前面電流トラックを形成したドープ半導体ウェハの銅めっきに関する改善された銅めっき方法を提供する。 - 特許庁

To provide a barrel plating device in which the occurrence of the variation of plating thickness is prevented by grasping the current flowing in respective cathode rods.例文帳に追加

陰極棒のそれぞれの電流の流れを把握してメッキ厚さ偏差の発生を予防するバレルメッキ装置を提供する。 - 特許庁

To provide a cylinder block plating apparatus and a cylinder block plating method, capable of suppressing any plating failure at an opening end of a cylinder bore on which the current is concentrated, and forming a uniform plating layer.例文帳に追加

電流が集中するシリンダボアの開口端部における花咲きを抑制するとともに、均一なめっき層を形成可能なシリンダブロックのめっき処理装置およびシリンダブロックのめっき処理方法を提案する。 - 特許庁

To provide a plating device and a plating method capable of enhancing the uniformity of a plated film thickness and the uniformity of a plated film surface by controlling the current density distribution in a plating tank uniformly and regulating the flow of a plating solution.例文帳に追加

めっき槽内の電流密度分布を均一に調整し且つめっき液の流れを調整してめっき膜厚均一性とめっき表面の均一性を高めるめっき装置及びめっき方法を提供する。 - 特許庁

METHOD AND DEVICE FOR REALIZING UNIFORM PLATING THICKNESS BY CONTROLLING LOCAL CURRENT例文帳に追加

局所電流を制御して均一なめっき厚を実現するための方法および装置 - 特許庁

The electrolytic copper plating is carried out first, at a low- current density of 1.5 A/dm^2 or lower in an allowable current range of plating bath and thereafter the remaining plating is carried out at a higher current density (for example, 3A/dm^2).例文帳に追加

前記電解銅メッキを行う際に、先ず電流密度がメッキ浴の許容電流範囲における１．５Ａ／ｄｍ^2以下の低電流密度で行って、膜厚１μｍ以上を析出させた後、残りのメッキをそれより高い電流密度（例えば、３Ａ／ｄｍ^2）で行う。 - 特許庁

Plating is performed by allowing the plating current to independently run in an electrode for the first and second portions, or by allowing electrolyte to independently flow therein.例文帳に追加

第１、第２の部分のための電極に独立にメッキ電流を与えたり、または独立に電解液を流すことによって行う。 - 特許庁

Subsequently, a field insulating film is formed on the hole H at a state wherein the plating current is increased by the leveller- containing plating solution 23.例文帳に追加

次いで、平坦化剤を含むめっき液２３によりめっき電流を増大させた状態でホールＨ上のフィールド成膜を行う。 - 特許庁

To provide an external plating method for semiconductor devices where the variation in the thickness of plating in a lead frame caused by the concentration of electric current is reduced.例文帳に追加

電流集中によるリードフレーム内のめっき厚ばらつきの小さい半導体装置の外装めっき方法を提供する。 - 特許庁

Further, a part where the silver plating is formed in the first plating tub 3a is set in a second plating tub 3b, a normal-value current is made to flow between the parent material and the electrodes, and a silver component is piled on the above silver plating to form a silver plating with a necessary thickness.例文帳に追加

続いて、第１メッキ漕３ａで銀メッキが形成された部分が第２メッキ漕３ｂにセットされ、その母材と電極との間に通常値の電流が流され、先程の銀メッキに銀成分を積み重ねることで必要な厚みを有した銀メッキを形成する。 - 特許庁

The method further comprises the steps of filling the hole 1 in the electrolytically plating step, and executing an electrolytically plating treatment using an electrolytic current having a waveform alternately inverted in a current conducting direction for a predetermined time in the plating step.例文帳に追加

このビアホール１を電解めっき工程により充填すると共に、この電解めっき工程において、通電方向が交互に反転する波形を有する電解電流を用いた電解めっき処理を一定時間施す。 - 特許庁

Further, anode current is supplied to the crystal oscillator after plating by using a QCM plating power source 10, by which the plating layers are dissolved and the reuse of the crystal oscillator is made possible.例文帳に追加

さらに、めっき後に水晶振動子にＱＣＭめっき電源１０を用いてアノード電流を通電することでめっき層を溶解し、水晶振動子の再使用を可能とした。 - 特許庁

To provide an electrolytic plating apparatus which controls the thickness uniformity of a plated film by controlling the distribution of a plating current through changing a distance between electrodes and an area of an anode in electrolytic plating treatment.例文帳に追加

電解めっき処理において、電極間距離やアノード電極の面積を変えることで、めっき電流分布を調整して、めっき厚みの均一性を制御することを目的とする。 - 特許庁

To provide a sulfuric acid bath for plating Sn at a high current density which foams little, has reduced production quantity of sludge and does not cause plating burning upon plating Sn on a copper alloy sheet at a high current density, and to provide a method for plating Sn on a copper alloy sheet with the use of the sulfuric acid bath.例文帳に追加

銅合金板に高電流密度でＳｎめっきを施すに際し、泡立ちが少なくてスラッジの発生量も少なくめっき焼けも発生しない高電流密度Ｓｎめっき用硫酸浴及びその硫酸浴を用いた銅合金板へのＳｎめっき方法を提供する。 - 特許庁

When electroplating is carried out by using a plurality of plating cells, an allowable lower limit value of current density is preobtained from the relationship between the current density and the plating efficiency, and the current density is controlled so that the current density does not fall below the allowable lower limit value by changing the number of the plating cells according to the line speed.例文帳に追加

複数のめっきセルを用いて電気めっきを施すに際し、予め電流密度とめっき効率との関係から電流密度の許容下限値を求めておき、ライン速度に応じてめっきセル数を切り替えることにより、電流密度が上記許容下限値を下回ることがないように、電流密度を制御する。 - 特許庁

The copper plating is performed so that a current step has a step where current is made to flow only at the opposite direction to the plating growth direction by only one step as shown in figure.例文帳に追加

銅めっきの電流ステップを図１に示すように、めっきを成長させる方向とは逆の方向にのみ電流を流すステップを１ステップのみ有するように銅めっきを実施する。 - 特許庁

This plating treatment device has a plating tank 201, plural conductive rollers 41 which are disposed in this plating tank 201, constitute cathodes and transport the works W, anodes 202 and 203 which are disposed across the conductive rollers 41 above and below the same within the plating tank 201 and a plating current supply section which supplies plating current to the conductive rollers 41.例文帳に追加

本発明のめっき処理装置は、めっき槽２０１と、前記めっき槽２０１内に設けられ、陰極を構成し、被処理物Ｗを搬送する複数の導電性ローラ４１と、前記めっき槽２０１内で前記導電性ローラ４１を挟んでその上下に設けられた陽極２０２，２０３と、前記導電性ローラ４１にめっき電流を供給するめっき電流供給部とを備える。 - 特許庁

The high-speed continuous plating apparatus is characterized in that the cooling unit for the plating apparatus is arranged between a power feed part and a plating bath and is opposed to the substrate and/or the power feed part and plating is done with >10 A/dm^2 current density.例文帳に追加

めっき処理装置用冷却装置が、給電部とめっき槽との間に基板および／または給電部と対向して配置されている１０Ａ／ｄｍ^２を超える電流密度でめっきを行う高速連続めっき処理装置。 - 特許庁

The tensile-stress plated layer and the compressive-stress plated layer can be formed by varying a type of a plating bath to be used in plating treatment, a type of a brightener to be added to the plating bath or a current density during the plating treatment.例文帳に追加

めっきに用いるめっき浴の種類、またはめっき浴に添加する光沢剤の種類、めっき中の電流密度を変えることにより、引張り応力めっき層、および圧縮応力めっき層を形成することができる。 - 特許庁

In the method for producing an electrogalvanized steel sheet where a steel sheet is subjected to galvanizing in a plurality of plating tanks for a plurality of times, the plating current density in the plating tank of the poststage is made lower than that in the plating tank of the prestage.例文帳に追加

複数のめっき槽で鋼板に複数回亜鉛めっきを施す電気亜鉛めっき鋼板の製造方法において、後段のめっき槽のめっき電流密度を前段のめっき槽のめっき電流密度より小さくする。 - 特許庁

When the fine recessed sections are filled with a plating layer, the polarity of the plating current supplied to the electroplating solution is inverted.例文帳に追加

前記微細な凹部がめっき層により充填された時点において、電解めっき液中に通電されるめっき電流の極性を反転させる。 - 特許庁