「再結晶温度」に関連した英語例文の一覧と使い方 - Weblio英語例文検索

また、再上昇温度と塩化ニッケル結晶のニッケル品位の関係式を事前に求めておき、再上昇温度変化量から塩化ニッケル結晶のニッケル品位を推定する塩化ニッケル結晶の製造方法である。例文帳に追加

Alternatively, a relational equation between the temperature change after the temperature rise and the grade of nickel is obtained in advance and the grade of nickel in the nickel chloride crystal is estimated by the temperature change during the temperature rise. - 特許庁

種結晶を用いた昇華再結晶法により炭化珪素単結晶を成長させる方法において、雰囲気圧力を結晶成長温度到達後に低下させる際に、成長用坩堝温度を降下させ、減圧時の一時的な坩堝内温度上昇を抑制する。例文帳に追加

In the method of growing the silicon carbide single crystal by a sublimation recrystallization method using a seed crystal, the temperature of a crucible for growth is lowered to suppress the temporary temperature elevation in the crucible during pressure reduction when the atmosphere pressure is dropped after the temperature for the growth of the crystal is attained. - 特許庁

その製造方法は、７００℃以上再結晶温度Ｔｓ以下の温度域で熱間圧延を終了し、再結晶温度Ｔｓ以下の温度域での総圧下率を１５％以上とし、熱間圧延後５００℃超８５０℃未満の温度域で巻き取り、続いて強制的に冷却する。例文帳に追加

In the production method therefor, the steel is hot-rolled so as to be finished at 700°C to a recrystallization temperature Ts, the total draft in the temperature range of the recrystallization temperature Ts or below is controlled to ≥15%, and, after the hot rolling, it is coiled in the temperature range of >500 to <850°C, and is successively subjected to forced cooling. - 特許庁

このような結晶は、５０〜７０℃の温度範囲で１時間以上保持する条件で再結晶化することによって得られる。例文帳に追加

Such the crystal is obtained by recrystallization under a condition of holding for ≥1 hr within a temperature range of 50-70°C. - 特許庁

高強度・高再結晶温度の高融点金属系合金材料とその製造方法例文帳に追加

ALLOY MATERIAL OF HIGH MELTING-POINT METAL HAVING HIGH STRENGTH AND HIGH RECRYSTALLIZATION TEMPERATURE, AND PRODUCTION METHOD THEREFOR - 特許庁

引き続き行われる二次再結晶焼鈍もしくは純化焼鈍は、焼鈍温度1050℃以上で行う。例文帳に追加

The successive secondary recrystallization annealing or purification annealing is carried out at ≥1,050°C annealing temperature. - 特許庁

例えば、再結晶温度（７５０℃程度）〜９５０℃以下の範囲内で加熱を行ったものとする。例文帳に追加

For example, the iron and steel is heated in a recrystallization temperature range from (about 750°C to 950°C). - 特許庁

高純度金の再結晶温度を正確かつ経済的に測定する方法を提供する。例文帳に追加

To provide a method for correctly and economically measuring the crystallization temperature of high purity gold. - 特許庁

昇華再結晶法による炭化珪素単結晶等の製造において、種結晶及び成長結晶の表面温度の径方向の均一化効果が顕著で、高品質でかつ長尺の単結晶の製造を可能とする遮蔽部材及びそれを備えた単結晶成長装置を提供する。例文帳に追加

To provide a shield member and an apparatus for growing a single crystal equipped with the member, which can produce a high quality and long-sized single crystal by virtue of prominent effects in uniformizing surface temperatures of the seed crystal and the grown crystal in the radial direction, in the production of a silicon carbide single crystal, etc., by a sublimation recrystallization method. - 特許庁

出発材料としては予め結晶粒がマクロ化処理されたものを用いるか、結晶析出処理を施す前に再結晶化温度以上に加熱処理して結晶粒のマクロ化を施すことが好ましい。例文帳に追加

It is preferable to use a material having crystal grains previously enlarged as a starting material, or enlarge the crystal grains by heat-treating a material at a recrystallization temperature or higher before carrying out the crystal-highlighting treatment. - 特許庁

そして、アニオン包接結晶７にマイクロ波を照射するマイクロ波発生装置１０を備えるとともに、温度制御手段１６，２０によってアニオン包接結晶７の結晶格子中に活性酸素が再生される再生温度域に触媒装置４の温度を制御する。例文帳に追加

The anion clathrate crystal 7 is provided with a microwave generator 10 for radiating micro wave to the anion clathrate crystal 7, and temperature control means 16 and 20 control temperature of the catalyst apparatus 4 to a regeneration temperature zone where active oxygen is regenerated in a crystal lattice of the anion clathrate crystal 7. - 特許庁

その製法として、再結晶を伴なう熱間圧延後、１７０〜３５０℃の非再結晶温度域で３０％以上の圧下率で異周速圧延を行なった後、再結晶熱処理を施す。例文帳に追加

In its production method, after hot rolling accompanied by recrystallization, different peripheral speed rolling is performed at a draft of ≥30% in the nonrecrystallization temperature region of 170 to 350°C, and thereafter, a recrystallization heat treatment is performed. - 特許庁

その製法として、再結晶を伴なう熱間圧延後、１７０〜３５０℃の非再結晶温度域で３０％以上の圧下率で異周速圧延を行なった後、再結晶を伴なう溶体化処理を施す。例文帳に追加

In its production method, after hot rolling accompanied by recrystallization, different peripheral speed rolling is performed at a draft of ≥30% in the nonrecrystallization temperature region of 170 to 350°C, and thereafter, solution treatment accompanied by recrystallization is performed. - 特許庁

さらには、フィレット部温度がオーステナイトの再結晶温度以下になるまでの圧延を上流側の圧延機のみで行なう。例文帳に追加

Furthermore, the rolling until the temperature in the fillet part becomes not higher than the recrystallization temperature of austenite is performed only by the rolling mill on the upstream side. - 特許庁

焼き鈍し段階は、金属層を形成する金属の再結晶温度よりも高い温度で金属層を焼き鈍しする。例文帳に追加

The annealing step anneals the metal layer at a temperature higher than a recrystallization temperature of the metal that forms the metal layer. - 特許庁

具体的には、材料が固相状態を保つことができ、かつ再結晶温度以上の温度下で、１万ｇ以上の重力加速度を印加する。例文帳に追加

Concretely, gravitational acceleration of ≥10,000 g is applied at a temperature in which the material can hold a solid phase state and which is also the recrystallization temperature thereof or above. - 特許庁

昇華再析出法によるＳｉＣ単結晶の製造において、坩堝の自己発熱によらない加熱方法により、種結晶の温度、原料の温度、及び成長空間領域の温度分布を容易に制御できるＳｉＣ単結晶の製造装置および製造方法を提供する。例文帳に追加

To provide an apparatus and a method for producing a SiC single crystal by which the temperature of a seed crystal, the temperature of a raw material and the temperature distribution in a growth space area can be easily controlled by a heating method not depending on self-heating of a crucible, in the production of the SiC single crystal by a sublimation and redeposition method. - 特許庁

５７０℃以下のフェライトが再結晶しない温度領域で全５０％以上の多パス圧延を行い、次いで最終の２パス以内でこれより高温でフェライトが動的再結晶する温度領域で圧延する。例文帳に追加

Multipass rolling by ≥50% of the whole is performed in the temperature region of ≤570°C in which ferrite is not recrystallized, and next, rolling is performed in the temperature region higher than the above, and in which ferrite is dynamically recrystallized within the final 2 passes. - 特許庁

そのために、温度は、電気めっきの際に形成されるクロム結晶が再結晶化されて、それによってbcc 構造の再結晶組織が得られるように選択される。例文帳に追加

The temperature is selected so that the chromium crystal formed during electroplating is re-crystallized to thereby obtain a bcc-type recrystallization structure. - 特許庁

鋼の組成が液相線温度においてオーステナイト相を呈する鋼について、凝固組織を微細化することにより、その後の圧延または鍛造における再結晶を促進し、圧減比や鍛造比の節減、および再結晶温度の低温化、再結晶時間の短時間化による製造コスト削減を図る。例文帳に追加

To accelerate recrystallization in subsequent rolling or forging of a steel having a steel composition showing austenitic phase at liquidus temperature by refining the solidification structure of the steel and to reduce manufacturing cost by reducing reduction ratio and forging ratio, lowering recrystallization temperature, and shortening recrystallization time. - 特許庁

熱処理に続いて焼入れ処理したチタン合金の熱処理で、合金の温度を、合金の再結晶温度よりも高く、合金のベータ-トランサス温度よりも低い温度まで上げて、合金内部で移相を引き起す。例文帳に追加

In thermal treatment of the titanium alloy subjected to quenching following thermal treatment, the temperature of the alloy is raised to a temperature higher than the recrystalization temperature of the alloy and lower than the beta-transus temperature of the alloy to cause a phase shift within the alloy. - 特許庁

試料２０を、第１の材料の包晶温度を超える温度に加熱し、包晶温度未満の温度に冷却し、続いて試料を、包晶温度を超える温度に急速に再加熱し、包晶温度未満の温度に再冷却して、実質的に二次核生成３０のない超伝導結晶構造体を作製する複数回の温度スパイクに曝す。例文帳に追加

The sample 20 is exposed to temperature spikes a plurality of times where it is heated to a temperature exceeding the peritectic temperature of the first material, is cooled to a temperature lower than the peritectic temperature, is rapidly reheated to a temperature exceeding the peritectic temperature, and is recooled to a temperature lower than the peritectic temperature so as to produce a superconductive crystal structural body substantially free from secondary nucleation 30. - 特許庁

また、ＰＰＳフィルムを再結晶温度〜融点の温度で熱処理することにより、結晶化度が２５％以上のＰＰＳフィルムを製造することができる。例文帳に追加

Further, by applying heat treatment at a temperature between a recrystallization temperature and a melting point, the PPS film with the crystallinity of 25% or more can be formed. - 特許庁

次いで、再び反応室の温度を１０４０℃まで上げ、ＧａＮ単結晶膜を成長させることにより、下地結晶基板上にＣｒＮ膜、ＧａＮバッファー層を介して厚さが約２０μｍのＧａＮ単結晶膜を得た。例文帳に追加

Subsequently, the temperature of the reaction chamber is again raised up to 1,040°C and a GaN single crystal film with a thickness of about 20 μm is obtained on the base crystal substrate through the CrN film and the GaN buffer layer by growing the GaN single crystal film. - 特許庁

さらには、圧延材のフィレット部温度がオーステナイトの再結晶温度以下になるまでは任意の圧延機で圧延し、未再結晶温度域で少なくとも１パスの圧延を上流側の圧延機群で行い、しかる後に下流側の圧延機群で中間圧延を終了する。例文帳に追加

Rolling is performed with an arbitrary rolling mill until the temperature in the fillet part of a rolled stock becomes not higher than the recrystallization temperature and the rolling of at least one pass is performed by a rolling mill group on the upstream side in the region of unrecrystallization temperature and, after that, the intermediate rolling is completed by the rolling mill group on the downstream side. - 特許庁

Ｃｕめっき層７ａ，７ｂの形成後、Ｃｕめっき層７ａ，７ｂが再結晶化する温度以上の温度で、かつ、導電性ペーストに含まれるガラスが軟化しない温度で熱処理することによりＣｕめっき層７ａ，７ｂを再結晶化させる。例文帳に追加

After forming the Cu plating layers 7a, 7b, the Cu plating layers 7a, 7b are recrystallized by performing a heat treatment at a temperature more than a temperature at which the Cu plating layers 7a, 7b are recrystallized, and at a temperature at which any glass contained in conductive paste is not softened. - 特許庁

このような組織状態は、時効処理した銅合金に対し、[1] 温間加工して平均結晶粒径１μｍ以下の微細結晶粒組織とする工程、[2] 再結晶温度未満の温度域で加熱処理する工程、を施すことによって得られる。例文帳に追加

The structural state is obtained by subjecting an aging-treated copper alloy to a stage [1] of performing worm working, so as to be a fine crystal grain structure, and a stage [2] of performing heating treatment in the temperature range less than a recrystallization temperature. - 特許庁

射出後の結晶性熱可塑性樹脂が金型に接触して温度が低下し、再結晶化温度よりも低い所定の温度（例えば約６５℃）まで冷却されると、制御装置は加熱媒体供給源を作動させて流路に水蒸気を流入させ、加熱を開始する（ステップＳ２）。例文帳に追加

When the injected resin is contacted with the mold to decrease its temperature and cooled to a prescribed temperature (for example about 65°C) lower than the re-crystallization temperature of the resin, water vapor is supplied into a channel by actuating a heating medium supply source by a controller to start heating (step S2). - 特許庁

水素透過性を有する水素透過性金属層などの構成部材のロウ付け接合処理温度を、水素透過性金属層の再結晶化温度をＴ１とし、電池やモジュールの使用環境の上限温度を再結晶化温度Ｔ１より低いＴ２としたとき、Ｔ１＞Ｔｋ＞Ｔ２を満たす処理温度Ｔｋで実行することとした。例文帳に追加

Brazing joint processing is executed by setting the brazing joint processing temperature of a constituent member such as a hydrogen permeable metal layer having hydrogen permeability at a processing temperature Tk satisfying T1>Tk>T2 when it is assumed that the recrystallization temperature of the hydrogen permeable metal layer is T1 and the upper limit temperature of a use environment of the hydrogen permeable metal layer is T2 lower than the recrystallization temperature T1. - 特許庁

未再結晶温度域での圧延温度履歴をフランジとフィレット、ウェブの３点間で近接化させるために、未再結晶温度域での総圧下率および仕上げ温度の部位間差、各部位における仕上温度を制御すること等により、均一な機械的特性を有する低降伏点比高靭性耐火Ｈ形鋼を製造する。例文帳に追加

For making rolling temperature histeresis in an unrecrystallized temperature region close among the three points of a flange, a fillet and a web, for example, the total draft, the difference in finishing temperature among the parts and the finishing temperature in each part in an unrecrystallized region are controlled, so that the low yield point ratio, high toughness, fire resistant wide flange shape having uniform mechanical properties is produced. - 特許庁

母材を加熱した後の冷却工程における再結晶温度未満、（めっき浴温度−３０）℃以上の温度領域において、母材表面に０．１％以上、１０％以下の歪みを付与する。例文帳に追加

In the temperature region lower than the recrystallization temperature and not lower than (plating bath temperature -30)°C in a cooling step after heating of a base material, 0.1-10% strain is applied to the surface of the base material. - 特許庁

トリウムタングステン電極より仕事関数が小さくて動作温度を低くでき、電極材がアークと接触する範囲以外は、電極材温度を再結晶温度（1500℃）以下にすることができるので、電極の変形範囲が最小となる。例文帳に追加

As a material for the negative electrode, 2 wt.% of La2O3-W is used, and as a material for the positive electrode, pure W is used. - 特許庁

再結晶焼鈍は、真空または不活性ガス雰囲気の熱処理炉内で行い、再結晶焼鈍条件は、加熱温度を４３０〜７５０℃に設定し、０．５〜２４時間保持する。例文帳に追加

The recrystallization annealing is performed in a heat treating furnace in a vacuum or inert gas atmosphere, and as the recrystallization annealing condition, the heating temperature is set to 430-750°C and held for 0.5-24 hours. - 特許庁

また、最終冷延後、再結晶温度まで加熱した後、圧延方向とほぼ直角方向に線状あるいは不連続な線状の溝を機械加工によって形成した後、二次再結晶を目的とする焼鈍を行う。例文帳に追加

The manufacturing method includes heating the sheet to a recrystallization temperature after a final cold rolling, forming the linear or discontinuously linear grooves in the approximately transverse direction against the rolling direction by machining, and then annealing it for the purpose of secondary recrystallization. - 特許庁

フェライト域潤滑圧延法において、鋼材の再結晶温度上昇を防止し自己焼鈍によって再結晶可能な深絞り性の良好な鋼材及びその製造方法を提供する。例文帳に追加

To provide a steel sheet in deep drawability which is obtained in a ferrite region lubrication rolling method so that a recrystallization temperature rise is prevented, and recrystallization is possible by self-annealing, and to provide its producing method. - 特許庁

具体的には、ある重量比で有機溶媒と粗ＴＣＰＡを混合し、加熱、溶解させた後、冷却温度及び再結晶回数を管理することにより、ＨＣＢ含有量の少ないＴＣＰＡを再結晶精製している。例文帳に追加

Specifically, recrystallization refinement can produce TCPA with a low HCB concentration by controlling the cooling temperature and the number of recrystallizations after an organic solvent and crude TCPA are mixed at a certain rate of weight, heated and dissolved.  - 経済産業省

温度ヒステリシス、氷の再結晶阻害活性を人工的に向上させた不凍タンパク質を提供する。例文帳に追加

To provide an antifreeze protein having artificially improved temperature hysteresis and ice recrystallization inhibiting activity. - 特許庁

回復または再結晶を起こす温度での延性、好適には鍛造性に優れた黄銅材を提供することを主目的とする。例文帳に追加

To provide a brass material excellent in ductility, in particlar in forgeability at a temperature in which strain recovery and recrystallization occurs. - 特許庁

温度ヒステリシス活性、氷の再結晶阻害活性等の不凍活性の高い不凍タンパク質を提供する。例文帳に追加

To provide an anti-freeze protein having high nonfreezing activities such as temperature hysteresis activity, ice recrystallization inhibitory activity, etc. - 特許庁

本発明は、特に、電気・電子部品の結線用の金線として使用される高純度金の再結晶温度の測定方法として利用価値が高い。例文帳に追加

This method is effectively utilized as the measuring method for recrystallization temperature of high purity gold used as gold wire for electric and electronic components. - 特許庁

この製法は、合金MA956中の非常に細かい構造の再結晶化を阻止するための１２００℃未満の温度および時間で行う。例文帳に追加

This manufacturing process is conducted at a temperature of lower than 1200 °C and the time to inhibit recrystallization of a highly-fine structure in the alloy MA956. - 特許庁

強誘電体薄膜の形成方法に関し、結晶化温度の低下を図るとともに、電気的特性等を再現性良く向上する。例文帳に追加

To lower crystallization temperature and to improve electric characteristics or the like with excellent reproductivity in a method of forming a ferroelectric thin film. - 特許庁

押圧加工ステップは、母材の再結晶点未満の温度で押圧加工し、また犠牲材を除去する。例文帳に追加

The press molding step includes pressing and molding the mixed material at a lower temperature than the recrystallization point of the base material, and removing the sacrificial material therefrom. - 特許庁

二次再結晶開始温度に達した時点で温度勾配が鋼帯コイルに付与されていれば、二次再結晶粒が圧延方向と交差する歪付与領域に沿って成長し、歪取り焼鈍でも消失しない磁区細分化効果が得られる。例文帳に追加

According to give the temperature gradient to a steel strip coil at the time of reaching to the starting temperature of a secondary recrystallization, the secondary recrystallized grains are grown along the strain-giving region crossed with the rolling direction, and thus the subdividing effect, that the magnetic domain does not dissipate even after performing the strain-removal annealing, is obtained. - 特許庁

この内、再結晶部１０２ａは、凹部１１０ａの形成段階において、外装缶１０を構成するＡｌ−Ｍｎ系合金が有する再結晶温度以上融点未満の範囲内の温度まで達する加熱を受けた領域である。例文帳に追加

Out of them, the recrystallized part 102a is a region receiving heating, during the forming step of a concave part 110a, up to temperatures within the range of recrystallization temperature or higher and less than a melting point of an Al-Mn group alloy constituting the outer package can 10. - 特許庁