「substrate temperature」に関連した英語例文の一覧と使い方(10ページ目) - Weblio英語例文検索

Subsequently, in an annealing treatment process, an annealing treatment is carried out to the silicon oxide film (241a) under the temperature condition that a treatment temperature is set at a temperature of a distortion point of the glass substrate (210) or less, and at an annealing temperature of an activation temperature of a semiconductor layer to be formed on the glass substrate (210) or higher.例文帳に追加

次に、アニール処理工程では、ガラス基板（２１０）の歪み点温度以下であり、且つ、ガラス基板（２１０）上に形成されるべき半導体層の活性化温度以上の温度であるアニール温度に処理温度が設定された温度条件下で、シリコン酸化膜（２４１ａ）にアニール処理を施す。 - 特許庁

To realize highly reliable electric inspection for a semiconductor substrate by uniformly adjusting the temperature of an object to be inspected, and preventing the object from being deformed owing to a local temperature difference of the object when applying low temperature and high temperature to the semiconductor substrate taking ordinary temperature as a reference.例文帳に追加

半導体基板に常温を基準として低温及び高温を印加するに際して、容易・迅速且つ確実に検査体の温度を均一に調節し、検査体の局所的の温度差に起因する検査体の変形の発生を防止し、半導体基板の信頼性の高い電気的検査を実現する。 - 特許庁

The method of manufacturing the optical recording medium 1 having the recording layer 5 on a substrate 2 comprises forming the recording layer 5 by sputtering and controlling the temperature of the substrate contact surface of a substrate holder on which the substrate 2 is held to the temperature within a specified temperature range with respect to the arbitrary set temperature selected from the temperature within a range from 30 to 40°C in sputtering.例文帳に追加

基板２上に記録層５を有する光記録媒体１を製造する方法であって、記録層５をスパッタリングによって形成し、該スパッタリングに際して、基板２が保持される基板ホルダーの基板接触面の温度を、３０〜４０℃の範囲内から選択される任意の設定温度に対して一定の温度範囲内に制御することを特徴とする、光記録媒体の製造方法。 - 特許庁

To provide a method and a device for elevating the temperature of a substrate quickly to a predetermined processing temperature and for sustaining the predetermined processing temperature in processing of a semiconductor substrate.例文帳に追加

半導体基板の処理において、基板を所定の処理温度まで迅速に昇温して該所定の処理温度に保つ方法及びその装置を提供する。 - 特許庁

At the time of manufacturing the semiconductor laser element 500, a temperature is first elevated so as to turn the temperature of the sapphire substrate 1 to 1150°C, held for 30 minutes and thereafter, lowered until the substrate temperature becomes 600°C.例文帳に追加

半導体レーザ素子５００の作製時には、まずサファイア基板１の温度が１１５０℃になるまで昇温して３０分間保持し、その後、基板温度が６００℃になるまで降温する。 - 特許庁

To provide a substrate heating apparatus which can make whole substrate surface into uniform temperature of a short time in any of temperature rising and temperature falling cases and to provide a deposition apparatus.例文帳に追加

昇温及び降温のいずれの場合にも短時間で基板全面を均一な温度にすることが可能な基板加熱装置、製膜装置を提供する。 - 特許庁

To provide a substrate processing apparatus of high energy efficiency excellent in temperature control accuracy of object of temperature control, and a temperature controlling device used for this substrate processing apparatus.例文帳に追加

本発明は、エネルギー効率が高く且つ、温度制御対象の温度制御精度のより優れた基板処理装置、及びそのような基板処理装置に用いられる温度調節装置を提供することを課題とする。 - 特許庁

In the first heating, the substrate 1a is heated at a heating temperature lower than a boiling point of water, and in the second heating, the substrate 1a is heated at a temperature higher than the first heating temperature.例文帳に追加

第１の加熱では基板１ａを水の沸点より低い加熱温度で加熱し、第２の加熱では基板１ａを第１の加熱の温度よりも高い温度で加熱する。 - 特許庁

A heater 3 adjusts the temperature of the sidewall 1 while the semiconductor substrate installed in the processing chamber 10 reaches a target temperature based on the acquired temperature of the semiconductor substrate.例文帳に追加

そして、取得された半導体基板の温度に基づいて、処理室１０内に設置された半導体基板が目標温度となる状態に、側壁１の温度がヒータ３により調整される。 - 特許庁

At that time, the temperature regulating operation is carried out so that the temperature control of the under surface of the substrate member disposed on the underside and the temperature control of the upper surface of the substrate member disposed on the upside may be done simultaneously.例文帳に追加

その時、その温度調整操作は、下側に配置した前記基板部材の下面の温度制御と、上側に配置した基板部材の上面の温度制御とを両方同時に行なうようにする。 - 特許庁

The temperature of the substrate placing section, in which a heat is robbed by the substrate and the temperature is lowered, can be returned quickly in this case, and the temperature can be stabilized rapidly.例文帳に追加

この場合、基板に熱を奪われて温度が低下した基板載置部の温度を素早く復帰させることができ、かつ速やかに温度を安定させることができる。 - 特許庁

A surface mounted infrared ray detector 205 and a temperature sensor element 206 detecting the temperature of the substrate 201 as the reference temperature are mounted on the upper face of the substrate 201.例文帳に追加

基板２０１の上面には、表面実装型の赤外線検出器２０５と、基準温度として基板２０１の温度を検出する温度センサ素子２０６とが搭載されている。 - 特許庁

To provide a screen printing method and a screen printing machine with a substrate temperature-adjustment function which enables homogeneous printing when a substrate or a pallet of a different temperature from a recommended printing temperature is used for printing.例文帳に追加

印刷推奨温度と温度差のある基板やパレットを使用して印刷する場合において、均質な印刷を可能とするスクリーン印刷方法及び基板温度調節機能付きスクリーン印刷装置を提供する。 - 特許庁

A temperature sensor 20 is mounted on a substrate 51 inside the electronic controller 5 and the atmospheric temperature of the controller 5 is estimated from the substrate temperature by a CPU 9.例文帳に追加

電子制御装置５内部の基板５１に温度センサ２０を実装し、この基板温度から制御装置５の周囲温度をＣＰＵ９により推定する。 - 特許庁

To provide a substrate heating apparatus capable of rising the temperature at high speed while ensuring the uniformity and temperature stability of the in-plane temperature of a substrate without increasing apparatus cost.例文帳に追加

装置コストを高くすることなく、基板の面内温度の均一性および温度安定性を確保しつつ高速昇温が可能な基板加熱装置を提供すること。 - 特許庁

To provide a substrate processing device where a substrate temperature in the middle of a processing can precisely and easily be measured, and a temperature control mechanism can precisely be controlled on the basis of a measured temperature thus obtained.例文帳に追加

処理中の基板温度を正確かつ簡便に測定することができ、得られた測定温度に基づいて正確な温調機構の制御を行うことができる基板処理装置を提供する。 - 特許庁

To provide a temperature measuring apparatus that can measure, with high precision, an actual temperature of a substrate which is processed in a heating process unit when a heat transient characteristic of a portion around a temperature sensor is close to an actual heat transient characteristic of the substrate.例文帳に追加

温度センサ周辺の熱の過渡特性が実際の基板の熱の過渡特性に近く、加熱処理ユニット内で処理される基板の実際の温度を高い精度にて測定することができる温度測定用装置を提供する。 - 特許庁

As compared with conventional methods of applying down flow of temperature-controlled air to a substrate to cool, a smaller volume of gas is temperature-controlled, and the temperature of the substrate 1 can be adjusted efficiently using a smaller volume of gas.例文帳に追加

従来の温度調節したエアを基板へダウンフローして基板を冷却する方法に比べ、温度調節する気体が少なく済み、少ない気体で効率良く基板１の温度が調節される。 - 特許庁

To provide a temperature measuring method for directly measuring a temperature in the outermost layer or the like of a substrate, to provide a temperature measuring apparatus and to provide an electronic-device-substrate treatment apparatus using the measuring apparatus.例文帳に追加

基材の最表面層等の温度を直接計測することが可能な温度測定方法、装置およびこれを用いた電子デバイス基材処理装置を提供する。 - 特許庁

Then, on film deposition, a temperature is detected with the thermocouple 6 fitted to the upper face 3b of the substrate holder 3 via the insulator 5, and the surface temperature of the substrate 4 is acquired based on the detected temperature and the above correlation.例文帳に追加

成膜時には、基板ホルダ３の上面３ｂに絶縁物体５を介して取り付けられた熱電対６を用いて温度を検出し、検出した温度と前記相関関係とに基づき、基板４の表面温度を取得する。 - 特許庁

In addition, it is preferable that the difference between the central temperature of the gas existing on the substrate and the temperature of the substrate is ≤200°C and the central temperature of the gas is ≥1,300°C.例文帳に追加

また、基板上に存在するガスの中心温度と基板温度との差が２００℃以下であり、かつ、該ガスの中心温度が１３００℃以上であることが好ましい。 - 特許庁

Here, a temperature T of the process substrate W is calculated using measured emission intensities I1 and I2 as well as acquired effective reflectivity R1 and R2, and a control part 60 controls a lamp based on the temperature T for temperature-control the substrate W.例文帳に追加

その際、計測される放射強度Ｉ1，Ｉ2と、求めた実効反射率Ｒ1，Ｒ2とを用いて処理基板Ｗの温度Ｔを算出し、制御部６０は、温度Ｔをもとにランプを制御し、基板Ｗの温度管理を行う。 - 特許庁

The system is provided with substrate heating heaters 40 comprising a plurality of rod heaters 20, a temperature sensor 3 measuring a temperature of an object 61 to be heated, and a temperature control unit 2 controlling heat generation of the substrate heating heaters 40.例文帳に追加

複数の棒状ヒータ２０を含む基板加熱ヒータ４０と、加熱する対象物６１の温度を測定する温度センサ３と、基板加熱ヒータ４０の発熱を制御する温度制御部２とを具備する。 - 特許庁

A temperature-distribution imparting means (heating lamp 2) imparts a temperature distribution before a carrying-in so as to relax the initial temperature distribution on the surface of the substrate, before the substrate is carried into the heating chamber 3, i.e., it is present at a standby place (cooling plate 4).例文帳に追加

温度分布付与手段（加熱ランプ２）は、待機位置（冷却プレート４）にて待機する加熱室３に搬入される前の基板の表面に、前記初期温度分布を緩和するような搬入前温度分布を付与する。 - 特許庁

The respective thermopile detectors HJ2a and CJ2b are located at the central part and the peripheral part on the inner surface of the substrate positioned in a sealed space 1 formed from the protecting case 4, and the temperatures of a high temperature part and a low temperature part caused by the temperature gradient on the inner surface of the substrate are detected.例文帳に追加

サーモパイルの各検出素子HJ2a,CJ2b を保護ケース４による密閉空間１に位置する基板内面の中央部と周辺部とに配置し、基板内面の温度勾配による高温部と低温部の温度を検出する。 - 特許庁

To provide a heat treatment apparatus in which the temperature at the edge of a substrate can be controlled locally and easily, temperature difference between the center part and the vicinity of the edge is reduced, and uniformity of actual temperature of the substrate can be improved easily.例文帳に追加

本発明は、基板の端縁部の温度を局所的に容易に制御でき、中央部と端縁部近傍との温度差を低減し、基板の実際の温度の均一性を容易に向上させることができる熱処理装置を提供する。 - 特許庁

Next, the IC chip 8 is pressed against the circuit substrate 9 while being heated to a temperature higher than the melting temperature of the substrate 91 composed of a thermoplastic resin and lower than the melting temperature of the bumps 81 or 200-300°C, for example.例文帳に追加

次に、ＩＣチップ８を、熱可塑性樹脂からなる基材９１の溶融温度以上、かつ、バンプ８１の溶融温度以下、例えば、２００℃〜３００℃にまで加熱しながらＩＣチップ８を回路基板９に向けて加圧する。 - 特許庁

When forming an oxide semiconductor film, a substrate is heated at a first temperature or more and less than a second temperature, while only a portion of the substrate having a typical length from 1 nm to 1 μm is heated to the second temperature or more.例文帳に追加

酸化物半導体の膜を形成するに際し、基板を第１の温度以上第２の温度未満に加熱しつつ、基板の、典型的な長さが１ｎｍ乃至１μｍの部分だけ、第２の温度以上の温度に加熱する。 - 特許庁

To provide a semiconductor mounting substrate mounting a chip thereon wherein, when the chip is configured by a wide-band gap semiconductor which can operate at a high temperature, the semiconductor mounting substrate obtains a structure which can endure up to a temperature area of the high temperature operation.例文帳に追加

基板上にチップの実装される半導体実装基板において、該チップを高温動作が可能なワイドバンドギャップ半導体によって構成した場合にその高温動作の温度域まで耐えられるような構成を得る。 - 特許庁

In some embodiment of the present invention, a thin-film solar cell 100 is provided which includes, on one surface of a substrate 5, a ground layer 11 containing a material which exhibits a lower thermal decomposition temperature or evaporation start temperature than the thermal decomposition temperature of the substrate.例文帳に追加

本発明のある態様においては、基板５の一方の面に基板の材質の熱分解温度より低い熱分解温度または気化開始温度を示す材質を含む下地層１１を備える薄膜太陽電池１００が提供される。 - 特許庁

To provide a plasma processing apparatus capable of highly accurately measuring the temperature of a substrate or the like and capable of highly accurately and efficiently performing plasma processing of the substrate, and to provide a temperature measuring method and a temperature measuring apparatus.例文帳に追加

基板等の温度を精度良く測定することができ、より精度良くかつ効率良く基板のプラズマ処理を行うことのできるプラズマ処理装置及び温度測定方法並びに温度測定装置を提供する。 - 特許庁

To appropriately control the temperature of a protective shield even in a plasma treatment device of, for instance, dry etching of a high aspect ratio or the like which processes a substrate by keeping the substrate at a relatively low temperature close to room temperature.例文帳に追加

室温近傍の比較的低い温度で基板を維持して加工する、例えば高アスペクト比のドライエッチング等のプラズマ処理装置でも、防護シールドの温度を適切に制御する。 - 特許庁

Even when film-deposition temperature at the time of deposition reaches nearly 200°C, generation of wrinkles on the surface of the substrate 24 can be suppressed since the glass transition temperature is sufficiently higher than the heated temperature of the substrate 24.例文帳に追加

蒸着時の成膜温度が２００℃前後に達しても基板２４の加熱温度よりも、ガラス転移温度が十分に高いので基板２４の表面に生ずる皺の発生を抑制できる。 - 特許庁

To provide a method for predicting the substrate temperature at the time of reflow heating step for obtaining a temperature condition which does not bring about a damage or the like at a circuit substrate by a simple method when a lead-free solder having a high melting temperature is used.例文帳に追加

溶融温度の高い鉛フリーはんだを用いた場合に、回路基板を破損等起こさない温度条件を簡易な手法で求められるリフロー加熱工程時の基板温度予測方法を提供する。 - 特許庁

The Raman scattered light derived by the substrate placement apparatus 1 is introduced into a temperature measurement apparatus 10 via the optical path body 4, and the temperature measurement apparatus 10 then measures the temperature of the substrate 9 to be processed.例文帳に追加

温度測定装置１０は基板載置装置１によって導出したラマン散乱光を光路体４を介して導入し温度測定を行う。 - 特許庁

Between sensors for performing temperature measurement at two points in the flow meter, the first temperature sensor 18 is provided on the first substrate 18 of the measurement element 1 while the second temperature sensor 15 is provided on the second substrate 14 within the casing 5.例文帳に追加

空気流量計における２点の温度測定を行うセンサのうち、第１温度センサ１８は、流量測定素子１の第１基板１８に設けられ、第２温度センサ１５は、ケーシング５内部の第２基板１４に設けられる。 - 特許庁

To provide a ceramic substrate which is excellent in temperature-rise/ temperature-fall characteristics and dielectric strength at a high temperature, has less warp and is optimum as a substrate for a semiconductor manufacturing/ inspecting device.例文帳に追加

昇温降温特性や高温での耐電圧に優れ、反り量も少ない、半導体製造・検査装置用の基板として最適なセラミック基板を提供すること。 - 特許庁

The exposure apparatus includes a holding member having a holding surface for holding a substrate irradiated with an exposure light, and a temperature control device for controlling the temperature of the substrate before being held in the holding member depending on the temperature of the holding surface.例文帳に追加

露光装置は、露光光が照射される基板を保持する保持面を有する保持部材と、保持面の温度に応じて、保持部材に保持される前の基板の温度を調整する温度調整装置とを備えている。 - 特許庁

To manufacture an SOI substrate by dividing a semiconductor substrate and joining a semiconductor layer separated from the semiconductor substrate to a glass substrate with a low heat resistant temperature, and to reproduce the semiconductor substrate after separation.例文帳に追加

半導体基板を分割し、かつ当該半導体基板から分離した半導体層をガラス基板など耐熱温度が低い基板に接合させることで、ＳＯＩ基板を作製する。 - 特許庁

To evenly get a treated gas across the whole area of a substrate to be processed that is mounted on a substrate mounting platform, and control the heat transfer coefficient between the substrate and the substrate mounting platform, thus making the temperature of the substrate uniform across its whole surface.例文帳に追加

基板載置台に載置した被処理基板に処理ガスを該基板の全域に均等に行き渡らせると共に、該基板と基板載置台間の熱伝達率を制御し、被処理基板の温度を面全域で均一化する。 - 特許庁

In the antireflection film deposition method for depositing the antireflection film by vapor-depositing metal fluoride onto a substrate, substrate temperature at which vapor-deposition onto a substrate surface is performed is 25 to 60°C lower than substrate temperature at which vapor-deposition onto a substrate rear surface is performed.例文帳に追加

本発明に関わる反射防止膜形成方法は、基板に金属フッ化物を蒸着することで反射防止膜を形成する方法において、前記基板の表面を蒸着する基板温度が、前記基板の裏面を蒸着する基板温度より25〜60℃低いものである。 - 特許庁

The processor has a substrate holder 10 for holding and spinning a substrate W, and a hot fluid feeder 24 for contacting a temperature-controlled hot fluid with the substrate W to control the temperature of the substrate W being held and spun by the substrate holder 10.例文帳に追加

基板Ｗを保持し回転させる基板保持部１０と、基板保持部１０で保持し回転させた基板Ｗに温度を制御した加熱流体を接触させて基板Ｗの温度を制御する加熱流体供給部２４とを有する。 - 特許庁

To provide a substrate treatment system capable of detecting an abnormality of the chip on a substrate in a stage before the inspection process of the substrate is performed in-line by measuring the temperature or temperature distribution of the substrate accompanied by operation or the chip on the substrate during treatment.例文帳に追加

動作を伴う基板や処理中の基板上のチップの温度または温度分布をインラインで計測して、基板の検査工程を行う前の段階で基板上のチップの異常を検出できる基板処理システムを提供する。 - 特許庁

In a pre-process for processing a substrate before forming a gate oxide film on a silicon carbide semiconductor substrate, while keeping the temperature of the substrate in a range from the room temperature to 1200 degree centigrade and applying ultraviolet rays to the substrate, the substrate is exposed to ozone to form the interface between oxide film/silicon carbide.例文帳に追加

炭化珪素半導体基板上に、ゲート酸化膜を形成する前の基板前処理工程において、基板の温度を室温から１２００℃の範囲に保ち、紫外線を照射しつつオゾン暴露を行って酸化膜／炭化珪素界面の作成する。 - 特許庁

To provide a rapid thermal processing apparatus and method ensuring accurate measurement of substrate temperature and high precision heating of a semiconductor substrate even under a low temperature state of a low translucence semiconductor substrate.例文帳に追加

遮光性の低い半導体基板の温度が低い状態においても正確な基板温度の測定及び半導体基板に対する高い精度の加熱を可能にする急速熱処理装置及び方法を提供する。 - 特許庁