「substrate temperature」に関連した英語例文の一覧と使い方(11ページ目) - Weblio英語例文検索

To provide a cooling method of a glass substrate wherein a heating quantity of a heater required for adjusting the temperature distribution of the substrate is reduced when cooling the glass substrate after being heated at a maximum temperature.例文帳に追加

最高温度で加熱した後のガラス基板を冷却する際において、基板の温度分布調整に要するヒーターの発熱量を低減することができるガラス基板の冷却方法を提供する。 - 特許庁

Such a quartz substrate 1 is placed in between heater blocks from upper and lower directions; and when the temperature of the quartz substrate is raised to attain to a desired temperature, the quarts substrate is pressurized by a press.例文帳に追加

このような水晶基板１を、上下方向からヒーターブロックで挟み込み、水晶基板の温度を昇温して所望の温度に到達した時点で、プレスにより押圧する。 - 特許庁

The low-temperature diffused junction of the electrode to the substrate is carried out by pressure heating at low temperature the substrate with the electrode in which the electrode of the metal thin film is formed in the insulative substrate.例文帳に追加

絶縁性の基板上に金属薄膜の電極が形成された電極付き基板を低温で加圧加熱して基板に電極を低温拡散接合する。 - 特許庁

Light is radiated onto a semiconductor layer 103 on a substrate 101 at 100°C or lower in substrate temperature for crystallization, and then the semiconductor layer 103 is treated by a plasma at 100°C or lower in substrate temperature.例文帳に追加

基板１０１上の半導体層１０３に基板温度１００℃以下で光照射による半導体層１０３の結晶化をおこない、しかる後に基板温度１００℃以下で半導体層１０３にプラズマ処理を施す。 - 特許庁

To suppress variation in height of the surface of a substrate by making distortion of a table mounted with the substrate small by effectively cooling the table when the substrate having temperature above room temperature is supported.例文帳に追加

常温より高い温度の基板を支持する際、基板を搭載するテーブルを効果的に冷却し、テーブルの歪を小さくして、基板の表面の高さの変動を抑制する。 - 特許庁

It is preferred that after the adhesive agent is provided, the glass substrate be cooled in the dry atmosphere, until the surface temperature of the glass substrate reaches a temperature at which the photoresist material can be applied on the surface of the glass substrate.例文帳に追加

該密着剤を付与した後、ガラス基板の表面温度が該ガラス基板表面にフォトレジスト材料を塗布可能な温度になるまで該ガラス基板を乾燥雰囲気中で冷却する態様などが好ましい。 - 特許庁

To conduct a heat treatment having a high accuracy in a short time when a substrate is placed on a substrate placing section, the temperature of the substrate is stabilized at an aimed process temperature and the specified heat treatment (a heating or a cooling) is conducted.例文帳に追加

基板載置部の上に基板を載置して、その温度を目標とするプロセス温度に安定させて所定の熱処理（加熱あるいは冷却）をする際において、高精度な熱処理を短時間で行うこと。 - 特許庁

Arsenic ions are implanted in a silicon substrate 11 in a state that a substrate temperature is kept at a low temperature of 100°C or lower and thereafter, a heat treatment is performed to form source/drain diffused layers 16 in the substrate 11.例文帳に追加

基板温度を１００℃以下の低温に保った状態で、シリコン基板１１に砒素イオンを注入した後、熱処理を行ってソース／ドレイン拡散層１６を形成する。 - 特許庁

To provide a high-reliability and low-temperature cofired ceramics multilayer substrate (LTCC substrate) by preventing occurrence of a crack around a castellation electrode of the low-temperature cofired ceramics multilayer substrate.例文帳に追加

低温焼成セラミックス多層基板のキャスタレーション電極周辺におけるクラックの発生を防止し、信頼性の高い低温焼成セラミックス多層基板（ＬＴＣＣ基板）を提供する。 - 特許庁

To provide a substrate processing apparatus capable of improving the throughput, a temperature control method of the substrate processing apparatus, and a method of manufacturing a device which uses the substrate processing apparatus and the temperature control method.例文帳に追加

スループットを改善することのできる基板処理装置、及び基板処理装置の温調方法、及びこれら基板処理装置や温調方法を用いるデバイスの製造方法を提供する。 - 特許庁

To provide a substrate holding body that can be heated to a prescribed temperature, even if it is a large substrate-holding body and ensures temperature uniformity of the enlarged substrate placing surface.例文帳に追加

大型の基板保持体であっても、所定の温度まで加熱することができ、かつ大型化した基板載置面の温度均一性を確保することが可能な基板保持体を提供する。 - 特許庁

By this bonding method, the deflection which is caused by thermal expansion of the second substrate and the first substrate can be reduced more than in the case of other junction substrate which is bonded before a temperature difference becomes smaller than a predetermined temperature difference.例文帳に追加

このような接合方法によれば、その温度差が所定温度差より小さくなる前に接合された他の接合基板に比較して、その第２基板とその第１基板との熱膨張に起因する反りをより低減することができる。 - 特許庁

The substrate 1 is heated to a state of a substrate temperature higher by 10 to 100°C than a desired deposition temperature in a heating chamber 4, following which the substrate is cooled in an atmosphere of nitrogen or hydrogen or a gaseous mixture composed of the nitrogen and the hydrogen in a transfer chamber 6.例文帳に追加

基板１を加熱室４で基板温度を所望の成膜温度よりも１０℃から１００℃高い状態に加熱した後、移載室６で窒素または水素または窒素と水素の混合ガス雰囲気で冷却する。 - 特許庁

To prevent deformation of the wiring board at the temperature near the soldering temperature without providing any base material for the reinforcement to an insulated substrate in the wiring board, in which the wiring is provided on the surface of the insulated substrate using a resin material or on the surface and interior of the same substrate.例文帳に追加

樹脂材料を用いた絶縁基板の表面、もしくは表面及び内部に配線を設けた配線板において、絶縁基板に補強用の基材を設けなくてもはんだ付け温度の近傍での配線板の変形を防ぐ。 - 特許庁

The substrate is heated to the crystallization temperature of the ferroelectric material or higher, and at the same time, the heating of the substrate is controlled so that a difference between highest and lowest values of the in-plane temperature of the substrate becomes ≤0.7×ΔQ_MAX (°).例文帳に追加

基板を、強誘電体材料の結晶化温度以上まで加熱するとともに、基板面内の温度の最高値と最低値との差が０．７×ΔＱ_ＭＡＸ〔°〕以下になるように制御する。 - 特許庁

To provide a heat treatment device for a substrate, which can evenly treat the substrate over the whole surface by reducing the temperature difference between a temperature compensating ring and the substrate at the time of heat treatment.例文帳に追加

加熱処理時における温度補償リングと基板との温度偏差を低減し、基板全面にわたり均一な処理を行える基板熱処理装置を提供する。 - 特許庁

To enable precise temperature detection to be executed even if a substrate for an inkjet head is a long substrate having a large number of heater elements and enable an increase in the width of a substrate caused by the arrangement of a temperature sensor to be also suppressed.例文帳に追加

発熱素子の数が多い長尺基板であっても正確な温度検出が行い得、かつ温度センサの配置に伴う基板幅の増加も抑制できるようにする。 - 特許庁

To provide a resin sealing apparatus having low-cost and small-size in which the temperature of a substrate is not remarkably lowered during a period until a preheated substrate is set in a mold or an unevenness does not occur at the temperature of the substrate.例文帳に追加

予備加熱された基板を金型にセットするまでの間に、基板の温度が著しく低下せず、あるいは、基板の温度にバラツキが生じない小型で安価な樹脂封止装置を提供することにある。 - 特許庁

The semiconductor device comprises a substrate 21, an inverter 14 mounted on the substrate 21, and a temperature detection element 17 arranged between the substrate 21 and the inverter 14 and detecting the temperature of the inverter 14.例文帳に追加

基板２１と、基板２１上に実装されるインバータ１４と、基板２１とインバータ１４との間に配置されインバータ１４の温度を検出する温度検出素子１７とを備える。 - 特許庁

To provide a substrate processing method which reduces to the utmost an influence of time required for a temperature adjusting process on decrease of throughput, and to provide a substrate processing apparatus which achieves temperature control accurately in a process unit for conducting a liquid process to the substrate.例文帳に追加

基板の温調処理に要する時間がスループットの低下に与える影響を極力減らすことができる基板処理装置及び基板処理方法を提供すること。 - 特許庁

Hence, right after the end portion of the substrate W is made to rise to the temperature corresponding to the chemical liquid processing, the chemical liquid is supplied to the end portion of the substrate W which is heated and temperature-risen by the rotation of the substrate W.例文帳に追加

このため、基板Ｗの端部が薬液処理に応じた温度に昇温された直後に基板Ｗの回転により加熱昇温された基板Ｗの端部に薬液が供給される。 - 特許庁

To provide a gripping device which achieves the bonding of a workpiece and a substrate at an optimum bonding temperature by detecting the temperature of a bonded portion when the workpiece is mounted on the substrate, in the gripping device to grip the workpiece to be mounted on the substrate.例文帳に追加

基板上に実装されるワークを把持する把持装置において、ワークを基板へ実装したときの接合部温度を検知し、最適な接合温度によるワークと基板との接合を可能とする把持装置を提供する。 - 特許庁

The magnetic multilayered film is formed as the substrate is kept at a temperature of 120 to 240°C, so that a heat load imposed on the substrate is more reduced in this manufacturing method than in a conventional manufacturing method in which the substrate is heated up to temperature of around 500°C.例文帳に追加

また、基板温度を１２０〜２４０℃として磁性多層膜を形成するので、基板温度が５００℃程度にされる従来の製造方法に比して基板等への温度負荷が低減される。 - 特許庁

Since the temperature of each heater H (H1-H4) becomes substantially constant excepting the opposite ends thereof, temperature distribution on the die surface (substrate supply set surface 113) is made uniform along the long side direction L of the substrate 400 on the substrate surface.例文帳に追加

これにより、各ヒータＨ（Ｈ１〜Ｈ４）における両端以外の部分の温度がほぼ一定になるので、型面（基板供給セット面113 ）における温度分布は基板面における基板400 の長手方向Ｌに沿って均一化される。 - 特許庁

Furthermore, after the resist 105 is removed, the semiconductor substrate 1 where the impurities have been injected is subjected to a heat retaining process of heating the semiconductor substrate 1 up to a prescribed temperature and keeping the semiconductor substrate 1 at the prescribed temperature for a prescribed time, and thus the deep well 10 can be obtained (Figure (c)).例文帳に追加

更に、レジスト１０５を取り除いた後、上記不純物の注入された半導体基板１を、所定の温度に加熱して保持する保熱処理を行うことで、ディープウェル１０を形成する（図２（ｃ））。 - 特許庁

To provide a method for measuring temperature for a finely writing device which can form a high-accuracy pattern by accurately measuring the temperature of a substrate while the substrate is transported and while the pattern is written on the substrate.例文帳に追加

搬送途中の基板温度及び描画中の基板温度を正確に測定し、高精度なパターンを形成できる微細描画装置における温度測定方法を提供することを目的とする。 - 特許庁

The surface or the back of the substrate whose temperature is to be measured is irradiated with light, an interference of reflected light from the substrate with reference light is measured, and the temperature on the surface and/or in the inside of the substrate is measured.例文帳に追加

温度を測定すべき基材の表面又は裏面に光を照射して、該基材からの反射光と参照光との干渉を測定することにより、前記基材の表面および／又は内部の温度を測定する。 - 特許庁

Bumps of the chip, held with the chip-holding means, are contacted to the substrate held with the substrate-holding means and the temperature change around the bumps on the substrate surface is recognized by the temperature-recognizing means.例文帳に追加

チップ保持手段に保持されたチップのバンプを、基板保持手段に保持された基板に接触させ、温度認識手段により基板の表面におけるバンプ周辺の温度変化を認識する。 - 特許庁

The exposure device EX for irradiating an exposure light EL on a substrate P through the liquid LQ for exposing the substrate P has a substrate holder PH that holds the substrate P; a substrate stage PST that is movable with a substrate P held on the substrate holder PH; and a temperature control system 60 that regulates the temperature of the substrate holder PH.例文帳に追加

露光装置ＥＸは、液体ＬＱを介して基板Ｐ上に露光光ＥＬを照射して、基板Ｐを露光するものであって、基板Ｐを保持する基板ホルダＰＨを有し、この基板ホルダＰＨに基板Ｐを保持して移動可能な基板ステージＰＳＴと、基板ホルダＰＨの温度調整を行う温調システム６０とを備えている。 - 特許庁

A substrate 1, prior to being conveyed to a chuck 10, is mounted on a substrate mount base 31 disposed in a substrate-temperature adjusting device 30 that adjusts the temperature of the substrate 1, and the lower face of the substrate 1 is supported by a plurality of projections 33 provided on the surface of the substrate mount base 31 for forming a gap between the substrate-mounting base 31 and the substrate 1.例文帳に追加

チャック１０へ搬送する前の基板１を、基板１の温度を調節する基板温度調節装置３０に設けた基板搭載台３１に搭載し、基板搭載台３１の表面に設けた複数の突起３３により基板１の下面を支持して、基板搭載台３１と基板１との間に隙間を形成する。 - 特許庁

This heat treatment apparatus is controlled with a programmed temperature profile that represents a relation between elapsing time and programmed temperature, wherein the programmed temperature profile is specified so as to contain both a center high-temperature condition where the temperature of the central part of the substrate is higher under film deposition and a periphery high-temperature condition where the temperature of the peripheral part of the substrate is higher.例文帳に追加

時間の経過と設定温度との関係を表した設定温度プロファイルによって熱処理装置を制御すると共に、設定温度プロファイルとして、成膜中の基板面上の温度分布が基板の中央近傍が高温の中央高温状態と基板の周縁が高温の周縁高温状態の双方が含まれるように規定されたものを用いる。 - 特許庁

To obtain a local heating device which becomes to have an ideal temperature profile by carrying out a temperature feedback control while accurately carrying out real-time temperature detection at heating by using a radiation thermometer in order to accurately detect a solder melting temperature, a heat resistant temperature of parts, and a temperature of an electronic circuit substrate.例文帳に追加

１．半田溶融温度、２．部品の耐熱温度、３．電子回路基板の温度を正確に検出するめ、放射温度計を用い、加熱時にリアルタイムな温度検出を正確に行いながら温度フィードバック制御を行って、理想的な温度プロファイルになる局所加熱装置を得ること。 - 特許庁

To provide a piezoelectric oscillator capable of compensating oscillation-frequency-to-temperature characteristics by linear approximation for both of a high temperature side and a low temperature side even when the temperature characteristics of an oscillation circuit (excluding a vibrator) including a substrate change over the high temperature side to the low temperature side.例文帳に追加

基板を含む発振回路（振動子を除く）の温度特性が高温側から低温側に亘って変化しても、高温側、低温側ともに発振周波数対温度特性を直線近似をもって補償することが可能な圧電発振器を提供する。 - 特許庁

Thereafter the temperature of the supercritical carbon dioxide is maintained below a decomposition temperature of the Pt catalyst complex, and the temperature of the CNT 14 without carrying a catalyst is maintained above the decomposition temperature of the Pt catalyst complex through heating of the substrate 12.例文帳に追加

その上で、超臨界二酸化炭素の温度を、Ｐｔ触媒錯体の分解温度以下に維持し、基板１２の加熱を経て、触媒未担持のＣＮＴ１４の温度を、Ｐｔ触媒錯体の分解温度以上に維持する。 - 特許庁

The substrate is subsequently annealed typically in vacuo at a temperature dependent on the particular patterning material, such as a carbide-forming temperature, a carbon-dissolution temperature or a low melting point metal-melting temperature.例文帳に追加

次に、基板は典型的な場合真空中で、具体的なパターン形成材料に依存した温度、たとえばカーバイド形成が起こる温度、カーボン分解が起こる温度又は低融点金属が溶融する温度で、アニールされる。 - 特許庁

The device 140 controls a driving of the member 110 so that the detected temperature by the element 120 is the temperature at the time of fix adjusting the contact shoe 150 to the substrate 100 or the temperature close to that temperature.例文帳に追加

温度制御装置１４０は、温度検出素子１２０の検出温度が基板１００に接触子１５０の取り付け調整を行った温度又はその温度の近傍の温度になるように温度制御部材１１０の駆動を制御する。 - 特許庁

A load cell unit 420 includes the first temperature sensor 428 measuring the temperature of a load cell 429 and the second temperature sensor 427a measuring the temperature of a weight signal processing substrate 427.例文帳に追加

ロードセルユニット４２０は、ロードセル４２９の温度を計測する第１温度センサ４２８と、計量信号処理基板４２７の温度を計測する第２温度センサ４２７ａとを有する。 - 特許庁

To provide a substrate processing apparatus which can increase the rate of temperature increase of a wafer, by suppressing overshoot of a temperature detected by a thermocouple inside a reaction tube, relative to the target temperature during the increase of the wafer temperature.例文帳に追加

ウエハ昇温時における反応管内の熱電対による検出温度が目標温度に対してオーバーシュートするのを抑制し、ウエハの昇温速度を向上させることができる基板処理装置を提供する。 - 特許庁

The mirror 2 with the temperature adjusting function includes a temperature measurement element 21, a thermo-element 22, a temperature adjusting electrode 23 and a temperature non-adjusting electrode 24 for energizing the thermo-element 22, and a substrate 20.例文帳に追加

温度調節機能付き鏡２は、測温素子２１と、熱電素子２２と、熱電素子２２に通電するための温調電極２３，非温調電極２４と、基板２０を備える。 - 特許庁

Resistance value of the temperature detection element 25 is varied corresponding to the temperature variation in order to detect the temperature of an exothermic resistor formed on the backside of the substrate 11 on which the temperature detecting element 25 is formed.例文帳に追加

温度変化に対し温度検出素子２５の抵抗値を変化させ、温度検出素子２５が形成された基板１１の裏面側に形成された発熱抵抗体の温度の検出を行うことができる。 - 特許庁

After drying the particle dispersion layer and the coating layer to some degree at a low temperature, a temperature of the substrate is raised to a temperature Ta satisfying inequalities: T2<Ta<T3 in a temperature raising process.例文帳に追加

低い温度で粒子分散層および被覆層をある程度乾燥させた後、昇温工程において、基板は、Ｔ２＜Ｔａ＜Ｔ３を満たす温度Ｔａに昇温される。 - 特許庁

Then, the wafer 10 is introduced supportively into a high-temperature region (position C in the vertical direction) of the temperature space 8 to increase its substrate temperature to its heat treatment temperature, and as to perform its heat treatment during a predetermined time.例文帳に追加

次に、温度空間８の高温域（鉛直方向位置Ｃ）に、ウエハ１０を導入して保持し、基板温度を熱処理温度まで上昇させるとともに、所定時間の熱処理を実行する。 - 特許庁

To provide a temperature regulator that can shorten the temperature raising time and temperature lowering time by means of thermal treatment equipment, and to provide a temperature regulation system and a substrate processing apparatus equipped with the system.例文帳に追加

熱処理装置による昇温時間および降温時間を短縮することができる温度調整器、温度調整システムおよびそれを備えた基板処理装置を提供する。 - 特許庁

A temperature adjusting table apparatus has a table 2 placing a disk substrate 1 and a refrigerant flow path 8 in which a refrigerant which controls the temperature of the table 2 and of which the temperature is controlled by an external temperature adjusting machine is made to flow.例文帳に追加

温調テーブル装置は、ディスク基板１を載置するテーブル２と、テーブル２の温度を制御するための、外部の温調機によって温度が制御される冷媒が流れる冷媒流路８とを有している。 - 特許庁

In the film deposition process, deposition is performed under such a condition that the temperature of the substrate during deposition is controlled to be in a range from the eutectic temperature of zinc oxide and the flux to a temperature higher by 150°C or less than the eutectic temperature.例文帳に追加

成膜工程では、堆積時の基板温度を酸化亜鉛とフラックスの共晶温度以上共晶温度＋１５０℃以下の範囲に制御した条件で堆積するものである。 - 特許庁