「reaction substrate」に関連した英語例文の一覧と使い方(5ページ目) - Weblio英語例文検索

To suppress plasma damage caused on a substrate when reaction products are laminated on a surface of the substrate by the ALD method and plasma modification is conducted to the reaction products.例文帳に追加

ＡＬＤ法により基板の表面に反応生成物を積層すると共にこの反応生成物に対してプラズマ改質を行うにあたり、基板に対するプラズマダメージを抑えること。 - 特許庁

To decrease a leakage amount to improve substrate treatment quality and to reduce running cost when sealing the boundary between a reaction tube and an adapter using a sealing gas in substrate treatment equipment having the reaction tube and the adapter.例文帳に追加

反応管とアダプタを有する基板処理装置に於いて、反応管とアダプタの境界部をシールガスでシールする場合に、リーク量を減少させ、基板の処理品質を向上させると共にランニングコストを低減する。 - 特許庁

As to a thin film forming device, a rotating electrode 18 is confronted with a substrate, and, while plasma is generated between both, this plasma is fed with reaction gas to cause chemical reaction, by which a thin film is formed on the substrate.例文帳に追加

回転する電極１８を基板１４に対向させて両者間にプラズマを発生させながら、このプラズマに反応ガスを供給して化学反応を起こさせることにより基板１４上に薄膜２３を形成する薄膜形成装置。 - 特許庁

A reaction phase formed through reaction of ceramics component in the ceramics substrate layers 21, 24 and glass component in the surface conductor 5 is deposited on the interface of the ceramics substrate layers 21, 24 and the surface conductor 5.例文帳に追加

セラミックス基板層２１，２４中のセラミックス成分と表面導体５中のガラス成分とが反応することにより形成された反応相がセラミックス基板層２１，２４と表面導体５の界面に析出している。 - 特許庁

A light emitting layer 16 to which a light emitting material emitting light through an electrochemical oxidation reaction or reduction reaction is provided between the first substrate 11 and the second substrate 12.例文帳に追加

第１基板１１及び第２基板１２の間には、電気化学的な酸化反応、或いは、還元反応を経て発光する発光材料を注入する発光層１６が設けられている。 - 特許庁

When the substrate holder 107 is installed at the inside of the reaction vessel, the lower part of the substrate holder 107 is electrically connected to the bottom plate (not shown in figure) of the reaction vessel via a rotation supporting mechanism (not shown in Figure).例文帳に追加

基体ホルダ１０７が反応容器の内部に設置されたとき、基体ホルダ１０７の下部は回転支持機構（不図示）を介して反応容器の底板（不図示）に電気的に接続される。 - 特許庁

A material gas is introduced into a reaction container in which a substrate is placed, and a semiconductor material generated by the chemical reaction of the material gas is deposited on the main surface of the substrate, thereby epitaxially growing the semiconductor layer serving as the light-emitting layer section.例文帳に追加

基板を配置した反応容器内に原料ガスを導入し、該原料ガスの化学反応により生ずる半導体材料を基板の主表面上に堆積させることにより、発光層部をなす半導体層を気相成長させる。 - 特許庁

To provide a substrate holding structure of vapor depositing equipment which can take out a rotating shaft and a bearing pipe from an inside of a reaction tube and easily adjust a location of the substrate without atmosphere entering in the reaction tube.例文帳に追加

反応管内から回転軸及び軸受管を簡単に取り出し可能であり、反応管内に大気が入ることなく基板の位置を容易に調整可能な気相成長装置の基板保持構造を提供する。 - 特許庁

The manufacturing method for the fine pore structural body has a process for preparing a reaction solution containing a metallic compound and the surfactant, a process for applying the reaction solution on a substrate and a process for holding the substrate in an atmosphere containing steam.例文帳に追加

金属化合物と界面活性剤を含有する反応溶液を用意する工程、該反応溶液を基板上に塗布する工程及び該基板を水蒸気を含む雰囲気中に保持する工程を有する細孔構造体の製造方法。 - 特許庁

Vertical-type CVD system as substrate treatment equipment, which treats a substrate W at a prescribed treatment temperature is provided with an external reaction tube 11, formed of quartz and an internal reaction tube 12 formed of quartz which are arranged concentrically.例文帳に追加

所定の処理温度で基板Ｗを処理する基板処理装置としての縦型ＣＶＤ装置は、同心状に配設された石英製外部反応管１１と石英製内部反応管１２とを備える。 - 特許庁

The deposited film formation device comprises: a reaction vessel 111 in which a substrate 112 is installed, and pressure can be reduced; and an exhaust means capable of reducing the pressure in the reaction vessel, and forming a deposited film on the substrate 112.例文帳に追加

基体１１２が設置される減圧可能な反応容器１１１と、該反応容器内を減圧可能とする排気手段とを含み、基体１１２上に堆積膜を形成する堆積膜形成装置である。 - 特許庁

A substrate treatment apparatus has a reaction chamber for treating a substrate, and the shower head 236 for supplying the inside of the reaction chamber with a raw material gas (the treating gas) G1 and radicals (the treating gas) G2 in a shower shape.例文帳に追加

基板処理装置は、基板を処理する反応室と、反応室内に原料ガス（処理ガス）Ｇ１、ラジカル（処理ガス）Ｇ２をシャワー状に供給するシャワーヘッド２３６とを有する。 - 特許庁

The raw material gas is introduced into a reaction chamber to generate plasma, and a substrate support part 1, on which a semiconductor substrate as the processing object is placed, is arranged within the reaction chamber in the plasma processing apparatus provided for the plasma processing.例文帳に追加

反応室内に原料ガスを導入し、プラズマを発生させて、プラズマ処理を行うプラズマ処理装置において、反応室の内部に、処理対象となる半導体基板が載置される基板支持部１を配置する。 - 特許庁

The substrate processor has a reaction chamber 10 for processing a substrate 41, process-gas feeding means 11, 12, 13 for feeding a process gas into the reaction chamber 10, and heat sources 20 for activating the process gas to generate active species in it.例文帳に追加

基板４１に処理を施す反応室１０と、反応室１０内に処理用ガスを供給する処理用ガス供給手段１１、１２、１３と、処理用ガスを活性化して活性種を生成するための熱源２０とを備える。 - 特許庁

The reaction tub is formed by adsorbing, to the plane substrate to be adsorbed, a sheet 202 that is apt to adsorbing to the plane substrate and where a recess defining the reaction tub is processed in its lower surface.例文帳に追加

反応槽は，平面基板に吸着しやすく，下面に反応槽となる窪みが加工されたシート２０２を吸平面基板の上に，吸着させることによって形成される。 - 特許庁

A semiconductor manufacturing device forms a film on a substrate, by utilizing the catalytic cracking reaction between the wire 16 provided near a substrate 15, set up in a reaction chamber 12 and a gaseous starting material supplied to the chamber 12.例文帳に追加

半導体製造装置は、反応室１２内の基板１５の近傍に設けられた素線１６と、反応室１２内に供給される原料ガスとの接触分解反応を利用して基板１５に成膜する。 - 特許庁

While the gas flowing toward the near part of the axis of the substrate carrier contains a relatively high-concentration carrier gas and a relatively low-concentration reaction gas, the gas flowing toward the distant part from the axis of the substrate carrier contains the relatively high-concentration reaction gas.例文帳に追加

基板キャリアの軸に近い部分に向かうガスは、比較的高濃度のキャリアガスと比較的低濃度の反応ガスを含み、基板キャリアの軸から遠い部分に向かうガスは、高濃度の反応ガスを含む。 - 特許庁

In the case of forming the p-type noncrystalline semiconductor film 3, there are the conditions of substrate temperature ≤210°C and reaction pressure ≥100 mTorr, more preferably, substrate temperature ≤180°C and reaction pressure ≥200 mTorr.例文帳に追加

ｐ型非晶質半導体膜３を形成する際の条件は、基板温度：２１０℃以下、反応圧力：１００ｍＴｏｒｒ以上、より好ましくは、基板温度：１８０℃以下、反応圧力：２００ｍＴｏｒｒ以上とする。 - 特許庁

A microchip 1 is equipped with a substrate 5 having upper and under surfaces, one or more reaction chambers 6 provided to the substrate 5 and one or a plurality of temperature sensors 10 provided to the parts other than the reaction chambers 6 of the inside, under surface and upper surface of the substrate 5 or to the inner surfaces of the reaction chambers 6 to output temperature detection signals to the outside of the substrate 5.例文帳に追加

マイクロチップ１は、表面と裏面を有する基板５と、その基板５に設けられた１以上の反応チャンバ６と、その基板５の内部、裏面及び表面の反応チャンバ６以外の部分、又は反応チャンバ６の内面に設けられ、その基板５外へ温度検出信号を出力する１又は複数の温度センサ１０とを備える。 - 特許庁

The system contains a reaction chamber having a substrate holder, a substrate placed on the substrate holder, precursor gas lines extending from precursor gas sources to the inside of the reaction chamber, a background gas line for supplying background gas into the reaction chamber, and a separation means for separating the precursor gases until the precursor gases come adjacent to the substrate.例文帳に追加

そのシステムは、基板支持体を有する反応チャンバと、基板支持体上に位置する基板と、前駆体ガスソースから反応チャンバ内に延長する前駆体ガスラインと、反応チャンバ内にバックグラウンドガスを供給するためのバックグラウンドガスラインと、前駆体ガスが基板に隣接するまで前駆体ガスを分離するための分離手段とを含む。 - 特許庁

There are provided: the photosynthesis substrate immobilizing an electron carrier, a photosensitizing dye molecule, and an enzyme on at least the surface of a base material; the method for producing the photosynthesis substrate; the method for photosynthesis reaction including bringing a reaction raw material solution into contact with the photosynthesis substrate; and the photosynthesis apparatus using the internal surface of a flow channel wherein the reaction raw material solution flows as the photosynthesis substrate.例文帳に追加

基材の少なくとも表面に電子伝達体、光増感色素分子および酵素を固定してなる光合成基板、光合成基板の製造方法、反応原料溶液を前記の光合成基板に接触させる光合成反応法、および反応原料溶液が流れる流路内面を前記の光合成基板として使用してなる光合成装置。 - 特許庁

A substrate processing method includes: a first step of carrying a substrate into a reaction chamber, supplying a material gas into the reaction chamber, irradiating the supplied material gas with the ultraviolet light, processing the substrate with an induced gas, and then carrying the substrate out; and a second step of supplying an etching gas into the reaction chamber after the first step and irradiating the supplied etching gas with the ultraviolet light.例文帳に追加

基板を反応室内へ搬入し、材料ガスを反応室へ供給し、供給された材料ガスに紫外光を照射し、誘起されたガスで基板を処理し、その後基板を搬出する第一のステップと、第一のステップの後、反応室内にエッチングガスを供給し、供給されたエッチングガスに紫外光を照射する第二のステップを有する基板処理方法。 - 特許庁

To provide a method for forming a deposition film, which can form a reaction film in a satisfactory bottom-coverage rate even on a substrate with a groove of a high aspect ratio and a hole and even on a substrate with a low heat-resistance such as a resin substrate, regardless of material of the substrate.例文帳に追加

アスペクト比の高い溝、及びホールを有する基板に基板の材質を問わず、例えば樹脂基板のような耐熱性の低い基板にボトムカバレッジ率よく反応膜を成膜できる堆積膜形成法を提供すること。 - 特許庁

Further, the substrate cooling mechanism for cooling the substrate in the reaction chamber is included, due to which the force cooling of the substrate after the film deposition is made possible and the additional reduction of the thermal load exerted on the substrate is made possible.例文帳に追加

更に、反応室内の基板を冷却する基板冷却機構を備えることで、成膜後において基板の強制冷却が可能となり、これにより基板に加わる熱的負荷の更なる低減を図れるようになる。 - 特許庁

In the substrate treating device which treats a substrate by introducing the reactive gas to the reaction chamber, the introducing position of the source gas is made rotatable relatively to a substrate 13 in a plane parallel to the surface of the substrate 13.例文帳に追加

反応室に反応ガスを導入して基板を処理する基板処理装置に於いて、反応ガスの導入位置が基板表面と平行な面内を基板１３に対して相対回転可能とした。 - 特許庁

Since a reaction substrate can mainly be irradiated with main reaction light having a wavelength of nearly 370 nm causing the polymerization reaction (main reaction), without an expensive light-irradiation device which irradiates only a monochromatic light, a side reaction can be controlled to obtain the gene transfer agent comprising a branched polymer having a narrow molecular weight distribution.例文帳に追加

単色光のみを照射する高価な光照射装置を用いることなく、反応基質に対して重合反応（主反応）を生じさせる３７０ｎｍ付近の波長の主反応光を主に照射することができるため、副反応を抑制して、分子量分布が狭い分岐型重合体よりなる遺伝子導入剤を得ることができる。 - 特許庁

This method for producing the enzyme reaction product comprises using a water-based enzyme reaction composition in which oxygen is contained and the substrate is dispersed, wherein the enzyme reaction product is produced by using the enzyme reaction composition which contains polysaccharides containing at least rhamnose, glucronic acid, glucose, and fucose as constitutive monosaccharides in the enzyme reaction composition.例文帳に追加

酵素を含み、基質が分散した水系の酵素反応組成物を用いた酵素反応生成物の製造方法において、前記酵素反応組成物中に少なくともラムノース、グルクロン酸、グルコース及びフコースを構成単糖として含む多糖類を含有する酵素反応組成物を用いて酵素反応生成物を製造する方法。 - 特許庁

To provide a nucleic acid analysis device in which the size of a reaction substrate for carrying out a base elongation reaction at one molecule unit is minimized without being influenced by the size of object lens, when the object lens is disposed as closely as to the reaction substrate and a base elongation reaction of one molecule unit is fluorescently observed, the observation accuracy is improved.例文帳に追加

一分子単位で塩基伸長反応を行う反応基板の寸法を、対物レンズ寸法の影響を受けることなく最小化でき、しかも対物レンズを、反応基板に極力接近配置して、一分子単位の塩基伸長反応を蛍光観察する場合に観察精度を高める核酸分析デバイスを提供する。 - 特許庁

Forming an interfacial reaction suppression layer 12 for suppressing an interfacial reaction between the oxide and the nitride between a ZnO single crystal substrate 11 as the oxide and an InGaN semiconductor layer 13 as the nitride can suppress the interfacial reaction between the ZnO single crystal substrate 11 and the InGaN semiconductor layer 13, thereby suppressing the formation of the reaction layer (Al_2ZnO_4) at the interface.例文帳に追加

酸化物であるZnO単結晶基板１１と窒化物であるInGaN半導体層１３との間に、酸化物と窒化物との界面反応を抑制するための界面反応抑制層１２を形成しているので、ZnO単結晶基板１１とInGaN半導体層１３との間での界面反応を抑制でき、その界面に反応層（Al_2ZnO_4）が形成されるのを抑制できる。 - 特許庁

In the process for producing a crystal of Al based III nitride such as aluminium nitride by causing reaction of the gas of Al based III halide such as aluminium trichloride and ammonia gas on a substrate held in a reaction region thereby causing vapor phase epitaxy on the substrate, the Al based III halide gas is touched to metal aluminium 15 before being fed out to a growth reaction tube 16 to cause reaction.例文帳に追加

三塩化アルミニウム等のAl系III族ハロゲン化物ガスとアンモニアガス等とを反応域に保持された基板上で反応させることにより、基板上に気相成長させて窒化アルミニウム等のAl系III族窒化物結晶を製造する方法において、該Al系III族ハロゲン化物ガスを金属アルミニウム１５と接触させた後に成長反応器１６に流出せしめて反応させる。 - 特許庁

The singly coiled coil-shaped carbon fiber 10 is produced by using particles of ironic metal stuck to a ceramic substrate obtained by rubbing the ironic metal on the ceramic substrate as a catalyst, arranging the catalyst in a reaction vessel, feeding a raw material gas forming carbon by being thermally decomposed, and a gas for accelerating the reaction to the reaction vessel, and heating the reaction vessel to carry out the thermal decomposition.例文帳に追加

この一重巻きのコイル状炭素繊維１０は、鉄系金属をセラミック基板に摺り付けて鉄系金属の粒子をセラミック基板上に密着させたものを触媒として用い、該触媒を反応容器中に配置し、同反応容器中に熱分解して炭素を生成する原料ガス及び反応促進用ガスを供給し、加熱して熱分解反応を行うことにより得られる。 - 特許庁

The substrate treatment apparatus comprises a reaction chamber 200 to treat a substrate 201, a susceptor (a supporter) 202 to support the substrate 201 in the reaction chamber 200, a heater 204 which is provided below the susceptor 202 to heat the substrate 201, and a ring-shaped cover plate 203 provided above the substrate 201 so as to cover at least an outer circumferential part of the substrate 201.例文帳に追加

基板処理装置は、基板２０１を処理する反応室２００と、反応室２００内で基板２０１を支持するサセプタ（支持具）２０２と、サセプタ２０２下方に設けられ基板２０１を加熱するヒータ２０４と、少なくとも基板２０１の外周部を覆うように基板２０１上方に設けられたリング状のカバープレート２０３とを有する。 - 特許庁

A reaction device for nucleic acid analysis includes a reaction channel formed by laminating a first substrate with a sample fixing layer and a second substrate through a spacer, in which the first substrate and the sample fixing layer come into contact with the spacer.例文帳に追加

サンプル固定層を有する第一の基板と第二の基板がスペーサを介して貼り合されることによって形成される反応流路を有する核酸分析用反応デバイスであって、前記第一の基板とサンプル固定層がスペーサと接する。 - 特許庁

The reaction zone is operated under the conditions in which the aromatic substrate is in the gas phase and causing vapor phase alkylation of the aromatic substrate as the aromatic substrate and the alkylating agent flow through the reaction zone and pass from one catalyst bed to the next.例文帳に追加

反応区域は、芳香族基質がガス状態にあり、芳香族基質およびアルキル化剤が反応区域を通って流れ一つの触媒ベッドから次へと通過して行く際、芳香族基質の蒸気相でのアルキル化が起こる条件で操作される。 - 特許庁

The device for producing a semiconductor comprises a reaction tube 31, a susceptor 11 for supporting a substrate disposed in the reaction tube, an adapter 35 for supporting the susceptor 11 and moving it up and down, and a substrate carrying robot having a susceptor replacing tweezer 28 for transferring the substrate onto the susceptor 11.例文帳に追加

半導体製造装置は、反応管３１と、反応管内に設けられ基板を支持するサセプタ１１と、サセプタ１１を支持し且つ上下動させるアダプタ３５と、基板をサセプタ１１上に移載するサセプタ交換用ツィーザ２８を有する基板搬送ロボットとを備える。 - 特許庁

In this plasma treatment process in which plasma treatment is performed to a substrate arranged in a reaction vessel, after the completion of the plasma treatment to the substrate, the inside of the reaction vessel is charged with a cooling gas under the pressure of 100-100,000 Pa, and the substrate is subjected to cooling treatment.例文帳に追加

反応容器内に配置した基体にプラズマ処理を行うプラズマ処理方法において、前記基体へのプラズマ処理の終了後に、前記反応容器内に冷却ガスを１００〜１００，０００Ｐａの圧力で充填し、前記基体の冷却処理を行うことを特徴とするプラズマ処理方法。 - 特許庁

A roll-shape long substrate 1 prepared by winding a long substrate multiple times into a roll shape with a prescribed space between the respective rolled parts is immersed in a reaction solution 6 for inorganic film formation in a reaction tank 5, to deposit an inorganic film on a surface of the long substrate.例文帳に追加

長尺基板を各巻部同士の間に所定の間隔を設けた状態でロール状に複数回巻回してなるロール状長尺基板１を、反応槽５内の無機薄膜形成用反応液６に浸漬して長尺基板表面に無機薄膜を析出させる。 - 特許庁

The substrate processing apparatus includes a reaction chamber which can be decompressed, and a shower head having a gaseous diffusion plate 9 in which through holes 10, 11' and 11 are formed to supply processing gas to the interior of the reaction chamber, and a substrate supporting part for installing the substrate.例文帳に追加

基板処理装置は、減圧可能な反応室と、貫通孔１０、１１’、１１が形成されたガス拡散プレート９を有し、反応室の内部に処理ガスを供給するシャワーヘッドと、基板を設置するための基板支持部とを備えている。 - 特許庁

In the electrophotographic photoreceptor 1 comprising a conductive substrate 2 and a photosensitive layer 3 containing a prescribed resin formed on the substrate 2, an area from a surface opposite to the substrate 2 up to a prescribed depth is modified by reaction of reactive lubricants with each other and/or reaction of a reactive lubricant with the resin.例文帳に追加

導電性基体２と、所定樹脂を含んで基体２上に形成された感光層３とを備える電子写真感光体１において、基体２と反対側の表面から所定深さまでの領域を、反応性潤滑剤同士の反応及び／又は反応性潤滑剤と樹脂との反応により改質する。 - 特許庁

The two perpendicular/horizontal transport mechanisms 100 insert the substrate-holding tool 18 into a reaction pipe 5, through a hole 13 for installing a substrate-holding tool in a rotating carriage 9 and an opening 6 of the reaction pipe 5, in a state of making the jointing member 32 hold the substrate-holding tool 18.例文帳に追加

２つの垂直・水平移動機構１００は、基板保持器具１８が連結部材３２に保持された状態で、回転台９の基板保持器具設置孔１３および反応管５の開口部６を介して、基板保持器具１８を反応管５内に挿入する。 - 特許庁

When the enzyme activity is exalted in the enzyme reaction liquid, an enzyme suspension, or an organism, the substrate concentration is set to a concentration approximately equal to, or higher than, a substrate concentration (optimum substrate concentration) required for realizing a maximum rate (Vmax) of the enzyme reaction, and then the liquid, the suspension, or the organism is irradiated with the magnetic field.例文帳に追加

酵素反応液、酵素懸濁液又は生体内の酵素活性を亢進させる場合、基質濃度を、その酵素の最大反応速度（Ｖｍａｘ）に必要な基質濃度（至適基質濃度）の前後、又は、それ以上の濃度に設定し、磁界を照射する。 - 特許庁

Gaseous raw material is introduced into a reaction chamber 1 having an exhaust means 6 and electric power is supplied between a substrate holder 4 and electrode 5 disposed in the reaction chamber to convert the gaseous raw material to plasma, by which the thin photocatalyst film is formed on a substrate of a prescribed temperature held on a substrate holder.例文帳に追加

排気手段６を有する反応チャンバー１内に原料ガスを導入し、反応チャンバー内に設けた基板ホルダー４と電極５との間に電力を供給して原料ガスをプラズマ化し、基板ホルダーに保持した所定温度の基板上に光触媒薄膜を形成する。 - 特許庁

In a microbial fuel cell, a substrate tank 12 where a substrate to be decomposed by an anaerobic microorganism is stored and a reaction tank 14 to store a medium for the anaerobic microorganism are separated by a negative electrode 16, and the anaerobic microorganism which releases electron by decomposing the substrate is supported at a reaction tank side of the negative electrode 16.例文帳に追加

嫌気性微生物により分解される基質が収容される基質槽１２と、嫌気性微生物の培地を収容する反応槽１４とが、陰極１６により分離され、基質を分解して電子を放出する嫌気性微生物が陰極１６の反応槽１４側に担持されている。 - 特許庁

The plasma CVD device to form a thin film on a substrate 2 comprises a reaction vessel 1, a grounding electrode 3 which is provided inside the reaction vessel 1 and provided with the substrate 2 thereon, and a counter electrode 4 which is provided inside the reaction vessel 1 and arranged opposite to the substrate 2, and a surface 4a of the counter electrode 4 is mirror finished.例文帳に追加

基板２上に薄膜を形成するためのプラズマＣＶＤ装置であって、反応容器１と、反応容器１の内部に設けられ基板２が配置される接地電極３と、反応容器１の内部に設けられ基板２と対向するように配置された対向電極４とを備え、対向電極４の表面４ａは、鏡面仕上げにされている。 - 特許庁

To provide a technique capable of performing a superior process by preventing a plurality of reaction gases from being mixed with one another on a substrate when forming a thin film by mounting the substrate on a rotary table to rotate the substrate, and sequentially supplying the plurality of reaction gases reacting with one another to laminate multiple layers of reaction products.例文帳に追加

回転テーブルに基板を載置し、この基板を回転させて基板の表面に互いに反応する複数の反応ガスを順番に供給して反応生成物の層を多数積層して薄膜を形成するにあたり、基板上にて複数の反応ガスが混合されることを防止して良好な処理を行うことができる技術を提供すること。 - 特許庁