「PHOTOELECTRIC」に関連した英語例文の一覧と使い方(213ページ目) - Weblio英語例文検索

A solar cell module comprises: a plurality of solar cells 10 each having a photoelectric conversion section 20 and an electrode 21; a wiring material 11 electrically connecting the plurality of the solar cells 10 by directly contacting the electrode 21; and a resin adhesive 12 bonding the solar cells 10 and the wiring material 11 to each other.例文帳に追加

太陽電池モジュール１は、光電変換部２０及び電極２１を有する複数の太陽電池１０と、電極２１に直接接触することにより、複数の太陽電池１０を電気的に接続している配線材１１と、太陽電池１０と配線材１１とを接着している樹脂接着剤１２とを備えている。 - 特許庁

The dye-sensitized photoelectric conversion element 1 includes the working electrode constituted from a region formed by braiding a plurality of first base materials 8 and second base materials 9 having conductivity and forming a linear shape, and has a porous oxide semiconductor layer 13 formed only on the light receiving face side of the working electrode.例文帳に追加

導電性を有するとともに線状をなす複数の第１基材８および第２基材９が網目状に編まれてなる領域から構成される作用極を備える色素増感型光電変換素子１であって、前記作用極の受光面側にのみ多孔質酸化物半導体層１３が形成されていることを特徴とする色素増感型光電変換素子１。 - 特許庁

To provide a method for stably manufacturing a gas barrier film having high gas barrier properties without causing irregularity by improving coating properties and adhesion at the time when a coating type barrier layer is formed on a base material or film containing an organic resin component, the gas barrier film, and an organic photoelectric conversion element having the gas barrier film.例文帳に追加

本発明の目的は、有機樹脂成分を含有する基材又は膜上に塗布型バリア層を形成する際の塗布性及び密着性を改良し、安定にバラツキなく、高いガスバリア性能を有するガスバリアフィルムを製造する方法及びガスバリアフィルムを提供し、かつ、該ガスバリアフィルムを有する有機光電変換素子を提供することである。 - 特許庁

In a control unit for a photoelectric sensor, received light amount data input from a light receiver or measurement data acquired by measurement processing is stored on a memory, and sampling processing for reading at predetermined intervals data stored on the memory as sampling data is performed, while restricting a period which is to be an object for the reading.例文帳に追加

光電センサの制御部において、受光部より入力された受光量データまたは計測処理により得た計測データをメモリに蓄積すると共に、メモリに格納されたデータをサンプリングデータとして一定の間隔で読み出すサンプリング処理を、読み出しの対象となる期間を限定して実行する。 - 特許庁

The solar cell includes first and second electrodes 111 and 119 spaced apart from each other, and a photoelectric conversion layer 115 which is a layer adapted to form a pn junction between the first electrode 111 and the second electrode 119 and is made up of a p-type material including an organic material and a n-type material 116 including organic nanowires.例文帳に追加

互いに離隔されるように配置される第１電極及び第２電極１１１、１１９と、前記第１電極１１１と第２電極１１９との間でｐｎ接合を形成する層であって、有機物を含むｐ型物質及び有機ナノワイヤーを含むｎ型物質１１６からなる光電変換層１１５と、を備える。 - 特許庁

To provide a method of manufacturing a buffer layer for a CZTS-based semiconductor such that a CdS buffer layer having excellent characteristics can be formed on a light absorption layer made of the CZTS-based semiconductor, a CBD solution for the CZTS-based semiconductor used for such a method, and a photoelectric element having the buffer layer obtained by such the method.例文帳に追加

ＣＺＴＳ系半導体からなる光吸収層の上に良好な特性を持つＣｄＳバッファ層を形成することが可能なＣＺＴＳ系半導体用バッファ層の製造方法、このような方法に用いられるＣＺＴＳ系半導体用ＣＢＤ溶液、及び、このような方法により得られるバッファ層を備えた光電素子を提供すること。 - 特許庁

A functional device has a transparent photoelectrode consisting of a photoelectric substrate 11 and a photoelectrode layer 12a, a counter electrode substrate 18a consisting of a metal, an electrolyte solution 15 filling the gap of both substrates, and a corrosion-resistant conductive layer 17a formed on the counter electrode substrate and exhibits corrosion resistance to the electrolyte solution, and a conductive catalyst layer 16.例文帳に追加

機能性デバイスは、光電基板１１と光電極層１２ａからなる透明な光電極と、金属からなる対向電極基板１８ａと、両基板の間隙に充填された電解質溶液１５と、対向電極基板に形成され電解質溶液に対して耐腐食性を有する耐腐食性導電層１７ａ及び導電性触媒層１６を有する。 - 特許庁

The imaging device has a pixel part with a photoelectric conversion part, and multiple storage parts temporarily storing signals produced by the pixel part in units of rows, transfers a signal output from the same pixel to the multiple storage parts in units of rows, and adds and outputs the signals accumulated in the multiple storage parts in units of rows.例文帳に追加

光電変換部を有する画素部を有し、前記画素部により生成された信号を一時的に蓄える蓄積部を列毎に複数備え、前記列毎の複数蓄積部に同一画素から出力される信号を転送するとともに、前記列毎の複数蓄積部に蓄積された信号を加算して出力する。 - 特許庁

A solid-state imaging element 1 includes: the pixels which perform photoelectric conversion of incident light; and an amplifier circuit AP having an operational amplifier OP1, in which the signals from pixels or the signals according to them are input, which selectively performs a switched capacitor amplifier operation and a voltage follower operation according to a control signal, and which is shared by both operations.例文帳に追加

固体撮像素子１は、入射光を光電変換する画素と、前記画素からの信号又はこれに応じた信号が入力され、制御信号に応じてスイッチトキャパシタアンプ動作及びボルテージフォロワ動作を選択的に行い、両動作に共用される演算増幅器ＯＰ１を有する増幅回路ＡＰと、を備える。 - 特許庁

A photoelectric conversion element 100 comprises a substrate 11 having a flat surface S, a plurality of semiconductor nanowires 2 which are arrayed on the flat surface S and extend in a tapered shape from the flat surface S, and a semiconductor layer 30 which fills gaps between the plurality of semiconductor nanowires 2 and has a carrier type different from that of the semiconductor nanowires 2.例文帳に追加

平坦面Ｓを有する基板１１と、平坦面Ｓ上に配列され、平坦面Ｓから先細り状に延びる複数の半導体ナノワイヤー２と、複数の半導体ナノワイヤー２同士の間隙を充填し、半導体ナノワイヤー２とは異なるキャリアタイプの半導体層３０と、を備える光電変換素子１００。 - 特許庁

The photoelectric conversion cell includes a first electrode layer 2, a light absorbing layer 4 prepared on one side of the first electrode layer 2, a buffer layer 5 containing a group III-VI compound prepared on one side of the light absorbing layer 4, and a second electrode layer 6 containing the group III-VI compound prepared on one side of the buffer layer 5.例文帳に追加

光電変換セルは、第１の電極層２と、第１の電極層２の一方側に設けられた光吸収層４と、光吸収層４の一方側に設けられたIII-VI族化合物を含むバッファ層５と、バッファ層５の一方側に設けられたIII-VI族化合物を含む第２の電極層６と、を具備する。 - 特許庁

The photoelectric converter 10 has a first semiconductor layer which contains a mixed crystal compound composed of a metal chalcogenide, a metal oxide, and a metal hydroxide such that in the total of the number of atoms of chalcogen elements making up the metal chalcogenide and oxygen elements, a number-of-atoms ratio of the chalcogen elements is larger than a number-of-atoms ratio of the oxygen elements.例文帳に追加

光電変換装置１０は、金属カルコゲン化物と金属酸化物と金属水酸化物との混晶化合物を含み、前記金属カルコゲン化物を構成するカルコゲン元素および酸素元素の合計の原子数における前記カルコゲン元素の原子数比率が前記酸素元素の原子数比率よりも大きい第１の半導体層を具備する。 - 特許庁

In the dye-sensitized photoelectric conversion element 1 having conductivity and having the action pole 5 made from a range where a plurality of linear first base materials 8 and a plurality of linear second base materials 9 are knitted at a mesh, an opening rate of the mesh at the range knitted in the mesh is 0.4-80%.例文帳に追加

導電性を有するとともに線状をなす複数の第１基材８および第２基材９が網目状に編まれてなる領域からなる作用極５を備えてなる色素増感型光電変換素子１であって、前記網目状に編まれてなる領域の網目の開口率が０．４〜８０％であることを特徴とする色素増感型光電変換素子１。 - 特許庁

The solid-state imaging device has: a first semiconductor region 23 of a first conductivity type; a photoelectric conversion unit PD having a second semiconductor region 25 of a second conductivity type that is formed in a region isolated by an element isolation region 28 in the first semiconductor region; and pixel transistors (Tr1 to Tr4) formed in the first semiconductor region.例文帳に追加

第１導電型の第１の半導体領域２３と、第１の半導体領域の素子分離領域２８で分離された領域内に形成された第２導電型の第２の半導体領域２５を有する光電変換部ＰＤと、第１の半導体領域に形成された画素トランジスタ（Ｔｒ１〜）Ｔｒ４）を有する。 - 特許庁

The rotation pulse generator 10 installed in a body of rotation 11 includes a reflective tape 12 having a high-reflection part 15 and a low-reflection part 16 with different reflectances alternately formed against a rotating direction of the body of rotation 11, and a photoelectric sensor 13 irradiating the reflective tape 12 with light and detecting the reflected light therefrom.例文帳に追加

回転パルス発生器１０は、回転体１１に設けられ、反射率の異なる高反射部１５と低反射部１６とが回転体１１の回転方向に対して交互に形成された反射テープ１２と、反射テープ１２に光を照射するとともに、その反射光を検出する光電センサ１３と、を備える。 - 特許庁

To provide a base material for a solar cell capable of enduring a stress during a process of manufacturing a solar cell at a high temperature, has a surface capable of obtaining a light confinement effect, and is useful for manufacturing a solar cell that exhibits superior photoelectric conversion efficiency, when it is used as a base material for a flexible solar cell.例文帳に追加

高温での太陽電池の製造プロセスのストレスに耐えることができ、かつ光閉じ込め効果を得ることができる表面を備え、フレキシブルな薄膜太陽電池の基材として用いたときに、優れた光電変換効率を示す太陽電池を製造するのに有用な太陽電池用基材を提供する。 - 特許庁

To provide a new kind of dye-sensitized solar cell of high photoelectric conversion rate, in which component amount that contributes to power generation is not decreased, contact resistance is low, necking formation between metal oxide particulates such as titanium oxide or the like is not hindered, and an ink in order to form a semiconductor layer in the solar cell, and the dye-sensitized solar cell module.例文帳に追加

発電に寄与する成分量を減少させることなく、また接触抵抗が低く、酸化チタン等の金属酸化物微粒子同士のネッキング形成が阻害されない、光電変換率の高い新規な色素増感型太陽電池、及びその太陽電池における半導体層を形成するためのインキ、並びに色素増感型太陽電池モジュールを提供することを目的とする。 - 特許庁

To prevent a current collecting portion extended from a working electrode from short-circuiting with a counter electrode, in a dye-sensitized photoelectric conversion element having the working electrode of a textile structure formed by knitting a plurality of wire rods in meshes and is sealed in a space formed by a visible translucent film and the foil-shaped counter electrode.例文帳に追加

複数の線材が網目状に編まれてなるテキスタイル構造の作用極を有し、該作用極が可視光の透過性を有するフィルムと箔状の対極とにより形成された空間に封入された構成の色素増感型光電変換素子において、作用極より延在する集電部と対極との短絡を防ぐ。 - 特許庁

A porosity is raised by restraining condensation of the eosine Y in the zinc oxide film while a density of the eosine y in the zinc oxide film is adjusted at 100 μM or more and 130 μM or less, and the zinc oxide porous layer having a larger surface area is formed, in order to constitute the dye-sensitized solar cell having higher photoelectric conversion efficiency.例文帳に追加

浴液中のエオシンＹの濃度を１００μＭ以上、１３０μＭ以下に調整することで、酸化亜鉛被膜中のエオシンＹの凝集を抑制させて空隙率を高め、より表面積の大きな酸化亜鉛多孔質層を形成させて、高い光電変換効率を持つ色素増感太陽電池を構成させる。 - 特許庁

A solar cell module X is formed by laminating a substrate 1, a first optical transparent resin layer 2 disposed on the substrate, a photoelectric conversion portion composed of a solar cell array which is formed by connecting a plurality of solar cell elements 3 on the first resin layer, a second resin layer 4 disposed on the photo conversion part, and a rear sheet 5.例文帳に追加

太陽電池モジュールＸは、基板１と、該基板上に配置された透光性の第１樹脂層２と、該第１樹脂層上に配置された複数の太陽電池素子３を接続してなる太陽電池素子列で構成された光電変換部と、該光電変換部上に配置された第２樹脂層４と、裏面シート５とを積層してなる。 - 特許庁

The low-energy X-ray detector 10 also includes: a totally reflecting prism 14, placed in front of the scintillator 12 for low energy, for totally reflecting light emission in the scintillator for low energy by 90 degrees; and a photoelectric element 16 for low energy for outputting an electric signal proportional to an amount of the light emission reflected by the totally reflecting prism.例文帳に追加

低エネルギーＸ線検出器１０は、さらに、低エネルギー用シンチレータ１２の前面に位置し、低エネルギー用シンチレータ内の発光を９０度全反射する全反射プリズム１４と、全反射プリズムで反射された発光光量に比例する電気信号を出力する低エネルギー用光電素子１６とを備える。 - 特許庁

The substrate for optoelectric composition includes a conductor circuit and aligning guide projections which project from the surface of the substrate, and when the outer periphery of the optical waveguide member is abutted on the aligning guide projections from a direction parallel to the surface of the substrate, the optical waveguide member is aligned with a position at which the photoelectric conversion member is to be mounted.例文帳に追加

本発明の光電気複合用基板は、導体回路および、基板表面から突出する位置合わせ用ガイド突起を有しており、光導波路部材の外周部を、基板表面と平行な方向から前記位置合わせ用ガイド突起に対し当接させたときに、当該光導波路部材が光電気変換部材を搭載すべき位置に対し位置合わせされる。 - 特許庁

To provide a base substrate with a transparent conductive oxide film which has low resistance, high transparency, excellent light scattering performance over the entire wavelength range of sunlight, and especially, has sufficiently small variance in C-light-source haze ratio even when used for a transfer type CVD device; a method for producing the base substrate; and a photoelectric conversion element using the base substrate.例文帳に追加

低抵抗、高透明で、太陽光の全波長域で良好な光散乱性能を有し、特に、搬送型のＣＶＤ装置に用いた場合であってもＣ光源ヘイズ率のばらつきが十分に小さい、透明導電性酸化物膜付き基体およびその製造方法ならびに該基板を用いた光電変換素子の提供。 - 特許庁

The solid-state imaging device includes: the imaging area 10 where the unit pixels 11 are arranged in two dimensional matrix; a vertical line drive means for driving the unit pixels based on the line and setting the signal accumulation time in the photoelectric conversion means of the driven unit pixels; and an accumulation time control means 23 for variably controlling the signal accumulation time based on line unit.例文帳に追加

単位画素１１が二次元の行列状に配置された撮像領域１０と、単位画素を行単位で駆動し、駆動される単位画素内の光電変換手段における信号蓄積時間を設定する垂直ライン駆動手段と、信号蓄積時間を行単位で可変制御する蓄積時間制御回路２３とを具備する。 - 特許庁

The solid-state image sensor comprises: a plurality of pixels to output signals generated by photoelectric conversion; a reference signal generation part to generate a reference signal; and an operator part to calculate, based on a comparison between a signal from an arbitrary pixel and a reference signal,a pulse signal corresponding to a differential signal between signals from the arbitrary pixel and an adjacent pixel of the same color.例文帳に追加

光電変換により生じた信号を出力する複数の画素と、基準信号を発生する基準信号発生部と、任意の画素に基づく信号と基準信号との比較結果に基づいて、任意の画素に基づく信号と、その画素と近接する同色の画素に基づく信号との差分信号に相当するパルス信号を演算する演算部とを備える。 - 特許庁

The solid-state image pickup device 1 includes a semiconductor layer 20 with a photoelectric conversion element to generate a signal electric charge corresponding to a received light quantity, the insulating layer 29 having an insulating material buried in an opening part formed at the semiconductor layer 20, and protecting membranes 30, 31 formed at a surface side of the semiconductor layer 20 so as to cover the insulating layer 29.例文帳に追加

受光した光の光量に応じた信号電荷を生成する光電変換素子を有する半導体層２０と、半導体層２０に形成された開口部に絶縁材料が埋め込まれて形成された絶縁層２９と、絶縁層２９を被覆するように半導体層２０の表面側に形成された保護膜３０，３１とから固体撮像装置１を構成する。 - 特許庁

To provide a scintillator panel where deformation of sealing parts is not easily caused due to handling during the handling period of attaching a scintillator panel to a photoelectric conversion panel as well as shock during the transportation period, while deteriorating rate of sharpness and incidence rate of specific failure in a humidity test are both low, and climbing and peeling of sealing parts are avoided during the handling period.例文帳に追加

シンチレータパネルを光電変換パネルにとりつける際のハンドリングや輸送時の衝撃による封止部分の変形が生じにくく、耐湿試験での鮮鋭性の劣化率及び特異的な故障発生率が低く、取り扱い中に封止部分の折れ、剥がれのないシンチレータパネルを提供。 - 特許庁

The method of manufacturing the die that has a texture structure for printing on a surface of a die substrate, used for manufacturing the base structure of a transparent insulating substrate with the base structure used for the photoelectric conversion element, includes a step of performing a CVD film formation on an initial texture structure after a step of forming the initial texture structure on the surface of the die substrate.例文帳に追加

光電変換素子に用いる下地構造付透明絶縁基板の下地構造の製造に用いる、金型基板の表面に印刷用テクスチャ構造を有する金型の製造方法であって、前記金型基板の表面に初期テクスチャ構造を形成する工程の後に、初期テクスチャ構造上にＣＶＤ製膜を行う工程を含むことを特徴とする金型の製造方法。 - 特許庁

A digital still camera includes an image sensor which outputs an image signal by photoelectrically converting the optical image of an object imaged through a lens, a gyro sensor which detects a shake of the body, and a notification unit (S09) which gives notification on a displacement of the body based on the shake of the body which is detected by the gyro sensor while the image sensor is carrying out photoelectric conversion.例文帳に追加

デジタルスチルカメラは、レンズを介して結像した被写体の光学画像を光電変換することによって、画像信号を出力するイメージセンサと、本体の振れを検出するジャイロセンサと、イメージセンサが光電変換している間、ジャイロセンサにより検出された本体の振れに基づいた本体の変位を通知する通知部（Ｓ０９）と、を備える。 - 特許庁

This organic photoelectric conversion element has a first electrode, a second electrode, and an active layer located between the first electrode and the second electrode, wherein the active layer includes a conjugate polymer compound, and the first electrode is provided by a process of bringing a coupling agent into contact with at least a surface of the electrode on the active layer side, and thereafter applying a lyophilic treatment to the surface.例文帳に追加

第１の電極と、第２の電極とを有し、該第１の電極と該第２の電極との間に活性層を有し、該活性層が共役高分子化合物を含み、該第１の電極が、電極の少なくとも該活性層側の表面にカップリング剤を接触させた後、該表面に親液化処理を施す工程により得られる有機光電変換素子。 - 特許庁

The device 100 for inspecting formation unevenness of a coating film includes a turntable 5 rotating while holding a substrate W the surface of which is applied by the film, a light irradiating means 2 irradiating light to the substrate W, and a photoelectric conversion means 4 receiving specular reflection light from the surface of the substrate W by the light irradiating means 2 to output signal of imaged imageries.例文帳に追加

塗膜形成ムラ検出装置１００は、表面に膜を塗布した基板Ｗを保持し回転する回転テーブル５と、基板Ｗに光を照射する光照射手段２と、光照射手段２による基板Ｗ表面からの正反射光を受光し、撮像画像の信号出力する光電変換手段４と、を備える。 - 特許庁

To provide a clad substrate for forming a safe and low-cost insulating layer having improved quality of heat resistance properties, insulation properties, or the like, and to provide a method of manufacturing the clad substrate, to provide a photoelectric conversion device and a thin-film solar cell module using the clad substrate, and to provide a method of manufacturing the thin-film solar cell module.例文帳に追加

安全かつ低コストで耐熱性および絶縁性等の品質が良好な絶縁層を形成することができるクラッド基板およびその製造方法、このクラッド基板を用いた光電変換装置および薄膜太陽電池モジュール、ならびに薄膜太陽電池モジュールの製造方法を提供する。 - 特許庁

To provide a composite film and a method for forming the composite film for a solar cell capable of improving conversion efficiency of the solar cell by decreasing the contact resistance between a photoelectric conversion layer and a transparent conductive film, and between the transparent conductive film and a conductive reflection film, decreasing the serial resistance of the solar cell in power generation, and provide a composition for transparent conductive film formation.例文帳に追加

光電変換層と透明導電膜間、透明導電膜と導電性反射膜間の接触抵抗を低下させ、発電の際の太陽電池における直列抵抗を低下させることにより、太陽電池の変換効率を向上させ得る太陽電池用の複合膜の形成方法及び複合膜並びに透明導電膜形成用組成物を提供する。 - 特許庁

A photoelectric conversion element layer, an oxygen ion implantation layer acting as an element isolation layer, and a circuit layer such as pixel transistor are sequentially formed, from a silicon substrate (surface) side, on the semiconductor substrate, for example, such as an SOI substrate in which a silicon layer is provided on a support substrate part (insulator layer), and then, a wiring layer is formed on the silicon layer.例文帳に追加

例えばＳＯＩ基板のような支持基板部（絶縁体層）の上にシリコン層を設けた半導体基板に対し、シリコン基板（表面）側から光電変換素子層、素子分離層としての酸素イオン注入層、画素トランジスタ等の回路層を順次形成し、その後、シリコン層上に配線層を形成する。 - 特許庁

The photoelectric conversion device 10 includes: a semiconductor layer 3; a first metal chalcogen compound semiconductor layer 4a which is located on the semiconductor layer 3 and has a crystal surface on a principal surface; and a second metal chalcogen compound semiconductor layer 4b which is located on the principal surface of the first metal chalcogen compound semiconductor layer 4a and made of a material different from that of the first metal chalcogen compound semiconductor layer 4a.例文帳に追加

光電変換装置１０は、半導体層３と、半導体層３上に位置し、主面に結晶面を有する第１の金属カルコゲン化合物半導体層４ａと、第１の金属カルコゲン化合物半導体層４ａの主面上に位置し、第１の金属カルコゲン化合物半導体層４ａとは異なる材料からなる第２の金属カルコゲン化合物半導体層４ｂとを具備する。 - 特許庁

In this case, for example, a sensor 33M for monitoring with structure substantially the same as that of the sensor element 33 is arranged, and the voltage value equivalent to the charging voltage of the accumulation node due to the dark currents generated in the photoelectric conversion element of the sensor 33M for monitoring is obtained, and the value of the reset voltage Vrst 1 is variably controlled according to the obtained voltage value.例文帳に追加

この際、例えば、センサ素子３３と実質的に同一構造のモニタ用センサ３３Ｍを配置し、モニタ用センサ３３Ｍの光電変換素子で発生する暗電流による蓄積ノードの充電電圧に相当する電圧値を取得し、その電圧値に応じてリセット電圧Ｖｒｓｔ１の値を可変制御する。 - 特許庁

The photoelectric conversion device X includes: a translucent substrate 1 having a first main face; a support substrate 8 having a second main face opposing to the first main face; an electrolyte 4 arranged in a gap formed between the translucent substrate 1 and the support substrate 8; and a joining member 6 which is arranged via the electrolyte 4 and a void 5, and joins the translucent substrate 1 and the support substrate 8.例文帳に追加

光電変換装置Ｘは、第１の主面を有する透光性基板１と、第１の主面に対向する第２の主面を有する支持基板８と、透光性基板１と支持基板８間で形成された間隙内に配された電解質４と、電解質４と空隙５を介して配置された、透光性基板１と支持基板８とを接合する接合部材６と、を具備している。 - 特許庁

In the method of manufacturing the photoelectric conversion element which has a scribing step of forming a scribe 30 on a film 13 including the transparent electrically conductive film 12 which is formed on the glass substrate 11, the scribing step is performed with a laser beam 15 induced with water jet 16 having a diameter of ≤100 μm and the laser beam 15 is emitted from the side of the film 13 toward the side of the glass substrate 11.例文帳に追加

ガラス基板１１上に成膜された透明導電膜１２を含む膜１３にスクライブ３０を形成するスクライブ工程を有する光電変換素子の製造方法において、スクライブ工程は直径が１００μｍ以下の水ジェット１６で誘導したレーザー光線１５によって行われ、レーザー光線１５を膜１３側からガラス基板１１側に向かって照射する。 - 特許庁

The photodetector includes: a first light transmitting section 101 for receiving the signal light, optically amplifying the signal light, and for transmitting the signal light; a second light transmitting section 102 for receiving the signal light, and transmitting the signal light; and a photoelectric conversion section 103 for photoelectrically converting the lights transmitted and output from the first and second light transmission sections 101, 102.例文帳に追加

信号光を受光して、該信号光を光増幅して伝送する第１光伝送部101と、信号光を受光して、該信号光を伝送する第２光伝送部102と、第１光伝送部101および第２光伝送部102からそれぞれ伝送されて出力される光を光電変換する光電変換部103と、を備える。 - 特許庁

A back-illuminated solid-state imaging device includes: a pixel region where a plurality of pixels comprising a photoelectric conversion part and a pixel transistor are arrayed; a light-shielding film 39 corresponding to an optical black level region 23B in the pixel region; a first planarization film 52 serving as a substrate of the light-shielding film 39; and an antireflective film 36 serving as a substrate of the first planarization film 52.例文帳に追加

本発明は、裏面照射型の固体撮像装置であって、光電変換部と画素トランジスタからなる複数の画素が配列された画素領域と、画素領域の光学的黒レベル領域２３Ｂに対応した遮光膜３９と、遮光膜３９の下地となる第１平坦化膜５２と、第１平坦化膜５２の下地となる反射防止膜３６とを有する。 - 特許庁

To provide a semiconductor electrode layer composed of a metal oxide semiconductor porous layer, which can be manufactured by low temperature calcination and which has all of the performance as an electrode, the hardness and the adhesion to a support member and achieves a higher photoelectric conversion performance when it is used to form a dye-sensitized-type solar cell, and to provide a method of manufacturing the semiconductor electrode layer, and an electrochemical device having the semiconductor electrode layer.例文帳に追加

低温焼成によって作製することができ、電極としての性能と、硬度および支持体への密着性とを両立させることができ、かつ、色素増感型太陽電池を構成した場合により高い光電変換性能が得られる、金属酸化物半導体多孔質層からなる半導体電極層及びその製造方法、並びに、その半導体電極層を有する電気化学装置を提供すること。 - 特許庁

The photoelectric conversion part includes: a semiconductor region 61 of a first conductivity type, provided on a surface of a semiconductor substrate 43; a charge storage region 63 of a second conductivity type, provided inside the semiconductor substrate 43; and an intrinsic semiconductor region 62 held between the semiconductor region 61 and the charge storage region 63, or a p-type semiconductor region doped more lightly than the charge storage region 63 of a second conductivity type.例文帳に追加

光電変換部は、半導体基板４３の表面側の第１導電型半導体領域６１と、半導体基板４３の内部側の第２導電型電荷蓄積領域６３と、両領域６１及び６３との間に挟まれた真性半導体領域６２、又は第２導電型電荷蓄積領域６３より低不純物濃度のｐ型半導体領域とを有する。 - 特許庁

A control portion 12 controls the pixel so that it sorts the electric charges outputted by the photoelectric conversion portion in a predetermined time rate determined for every predetermined color to the electric charge storage portion and to the drain electrode for each time period of multiple time periods of divided exposure time period of the light receiving portion 11, and reads the electric charges stored in the charge storage portion, after the exposure of the light receiving portion 11 ends.例文帳に追加

制御部１２は、受光素子１１の露光時間を複数に分割した時間毎に、光電変換部が出力した電荷を、電荷蓄積部とドレイン電極とに所定の色毎に定められた所定の時間の割合で振り分けるように画素を制御し、受光素子１１の露光が終了した後、電荷蓄積部が蓄積した電荷を読み出す。 - 特許庁

This photoelectric encoder is equipped with: a scale 10 having a diffraction grating 11 formed at a prescribed pitch in a measuring axis direction; a detection head 30 including a first fiber 20 for propagating reflected light of light irradiated to the scale 10; first lenses 60, 62 for collecting the reflected light propagated through the first fiber 20; and a light receiving element 54 for receiving the collected reflected light, and converting the light into an electric signal.例文帳に追加

光電式エンコーダは、測定軸方向に所定ピッチで形成された回折格子１１を有するスケール１０と、スケール１０に照射された光の反射光を伝搬する第１ファイバ２０を備える検出ヘッド３０と、第１ファイバ２０を伝搬した反射光を集光する第１レンズ６０，６２と、集光された反射光を受光し、電気信号に変換する受光素子５４とを備える。 - 特許庁

A solar cell polarizing plate 21 includes: a grid-like film 31 where a plurality of fine recesses and protrusions having predetermined pitches or smaller are formed in a stripe pattern; lower layer wiring 33 provided along bottom surfaces of the recesses of the grid-like film 31; and photoelectric conversion layers 34 which are disposed in contact with the lower layer wiring 33 and have elongated shapes along the recesses of the grid-like film 31.例文帳に追加

ソーラセル偏光板２１は、所定のピッチ以下の微細な複数の凹部および凸部が縞状に形成された格子状フィルム３１と、格子状フィルム３１の凹部の底面に沿って設けられた下層配線３３と、下層配線３３に接して配置され、格子状フィルム３１の凹部に沿った細長い形状の光電変換層３４とを備える。 - 特許庁