「substrate structure」に関連した英語例文の一覧と使い方(202ページ目) - Weblio英語例文検索

A method for manufacturing an antireflection film comprises steps of: applying a coating composition on a substrate to form a coated film; volatilizing a solvent from the coated film and drying it; and curing the coated film to form a cured layer, in this order, and thereby forming a multilayer structure composed of layers, each having different refractive indexes, from the coating composition.例文帳に追加

下記（Ａ）〜（Ｄ）成分を含有する塗布組成物を基材上に塗布し塗膜を形成する工程、該塗膜から溶剤を揮発させ乾燥させる工程、該塗膜を硬化し硬化層を形成する工程をこの順に有し、前記塗布組成物から屈折率の異なる多層構造を形成させる、反射防止フィルムの製造方法。 - 特許庁

To provide a method for manufacturing a light emitting element which can increase an internal quantum efficiency using a gallium-nitride compound semiconductor having a reduced dislocation density, and also to provide a method for manufacturing a light emitting element which can avoid cracks in the light emitting element and increase a light output efficiency by simplifying a step of forming a substrate having an unevenness structure.例文帳に追加

転位密度を低減した窒化ガリウム系化合物半導体を用いて内部量子効率を向上させた発光素子の製造方法、また基板の凹凸構造の形成工程を簡易化して発光素子にクラックが生ずるのを回避し、光の取り出し効率の向上した発光素子を製造できる製造方法を提供すること。 - 特許庁

An n-InP buffer layer 54, GalnAsP group MQW56 of light- emission wavelength, 1,550 nm, p-InP upper-part clad layer 58, p-GalnAs intermediate layer 60, and p-AllnAs oxidized layer 62 are epitaxial-grown sequentially on an n-InP substrate 52 by through MOCVD method, etc., forming a laminated structure.例文帳に追加

本作製方法は、ｎ−ＩｎＰ基板５２上に、ＭＯＣＶＤ法等によって、ｎ−ＩｎＰバッファー層５４、発光波長１５５０ｎｍのＧａｌｎＡｓＰ系ＭＱＷ５６、ｐ−ＩｎＰ上部クラッド層５８、ｐ−ＧａｌｎＡｓ中間層６０、及びｐ−ＡｌｌｎＡｓ被酸化層６２を、順次、エピタキシャル成長させて、積層構造を形成する。 - 特許庁

The reflection type spherical aberration correction element 40 includes a buckling type micro-actuator in which vibration plates (diaphragm) having such structure that a piezo thin film 44 is held between electrode films 43 and 45 are laminated on a semiconductor substrate 41, curvature of the reflection plane by the vibration plate is changed by controlling applied voltage to each electrode film 43, 45.例文帳に追加

この反射型球面収差補正素子４０は、半導体基板４１上にピエゾ薄膜４４を電極膜４３、４５で挟んた構造の振動板（ダイアフラム）を積層した座屈型マイクロアクチュエータを含むものであり、各電極膜４３、４５間の印加電圧を制御することで振動板による反射面の曲率を変化させる。 - 特許庁

The manufacturing method of the vertical magnetic recording medium provided with the magnetic recording layer in a granular structure having a non-magnetic grain boundary part between columnar magnetic particles on a non-magnetic substrate is characterized by impressing the high frequency of a specified frequency ≤13.56 MHz when depositing the magnetic recording layer.例文帳に追加

本発明の垂直磁気記録媒体の製造方法は、非磁性基板上に、柱状の磁性粒子間に非磁性の粒界部を有するグラニュラ構造の磁気記録層を具備する垂直磁気記録媒体の製造方法であって、前記磁気記録層の成膜時に、１３．５６ＭＨｚ以下の特定の周波数の高周波を印加することを特徴とする。 - 特許庁

A transparent electrode 12 and an auxiliary electrode 13, of a prescribed pattern installed on the surface of the transparent electrode, are formed on a transparent glass substrate 11, a first insulating layer 16 and a second insulating layer 17 to cover the auxiliary electrode 13 are formed in a lamination structure, and an organic EL layer 18 is formed over the transparent electrode 12.例文帳に追加

透明ガラス基板１１上において、透明電極１２および該透明電極１２表面に配設された所定パターンの補助電極１３が形成され、該補助電極１３を被覆する第１の絶縁層１６および第２の絶縁層１７が積層構造に形成され、透明電極１２上に有機ＥＬ層１８が形成される。 - 特許庁

The non-volatile semiconductor memory device includes a memory cell, having a self-aligned two-layer gate structure which includes a gate insulating film formed on a semiconductor substrate, a first conductor 3 serving as a floating gate layer, a second conductor 7 serving as a control gate layer, and an insulation film 6 for electrically insulating the first conductor and the second conductor.例文帳に追加

不揮発性半導体記憶装置は、半導体基板上に形成された、ゲート絶縁膜と、浮遊ゲート層となる第１の導電体３と、制御ゲート層となる第２の導電体７と、第１の導電体と前記第２の導電体を電気的に絶縁する絶縁膜６と、からなる自己整合的な二層ゲート構造を有するメモリセルを含む。 - 特許庁

To provide a semiconductor device wherein breakdown of a semiconductor element by thermal stress is prevented effectively, and primary packaging reliability and secondary packaging reliability can be ensured simultaneously in a semiconductor device in which a semiconductor element, especially a semiconductor element which uses silicon as semiconductor material is mounted on a wiring board having a ceramic insulating substrate, and to provide its packaging structure.例文帳に追加

半導体素子、特にシリコンを半導体材料として用いた半導体素子がセラミック絶縁基板を有する配線基板上に搭載された半導体装置において、熱応力による半導体素子の破壊が有効に防止され、１次実装信頼性と、２次実装信頼性とを同時に確保できる半導体装置とその実装構造を提供する。 - 特許庁

When manufacturing a photoelectric conversion element having a structure in which an electrolyte layer 10 provided between a porous electrode 5 provided on a transparent conductive layer 2 of a transparent substrate 1 and a counter electrode 8, current collector wiring 3 is formed by a conductive paste containing silver particles and low-melting-point glass frits on the transparent conductive layer 2.例文帳に追加

透明基板１の透明導電層２上に設けられた多孔質電極５と対極８との間に電解質層１０が設けられた構造を有する光電変換素子を製造する場合に、透明導電層２上に銀粒子と低融点ガラスフリットとを含む導電性ペーストにより集電配線３を形成する。 - 特許庁

This integrated circuit inductance structure includes a silicon substrate, a planar winding of a conductive track, a resistive layer which is not etched under the winding, an insulation layer between the winding and the resistive layer, and discontinuous conductive sections, individually parallel to a portion of the winding, which is the closest and electrically connected to ground and to the resistive layer.例文帳に追加

シリコン基板と、導電性トラックの平面巻き線と、該巻き線の下のエッチングされていない抵抗層と、巻き線と前記抵抗層の間の絶縁層と、最も近い巻き線部分に個別に平行であり、アース及び前記抵抗層に電気接続される不連続導電性部分とを含む、集積回路インダクタンス構造を提供する。 - 特許庁

Since the lead is not contained in a nickel film by a structure having an electrolytic nickel plating layer formed in a solder plating solution bath which does not contain a brightener on a conductor pattern formed on an insulating substrate, the printed wiring board which suited to environmental regulation systems, such as ELV instructions, RoHS instructions, etc., and a method of manufacturing it can be provided.例文帳に追加

絶縁基板上に形成された導体パターンの上に光沢剤を含有しないめっき液浴中で形成された電解ニッケルめっき層を備えた構造により、ニッケル皮膜中には鉛が含まれないため、ＥＬＶ指令、ＲｏＨＳ指令等の環境法規制に適合したプリント配線板とその製造方法を提供することができるものである。 - 特許庁

This method comprises the steps of embedding a conductive metallic material into fine recesses formed in a substrate, such as a semiconductor wafer (step 1), polishing the surface of the metallic material by a mechanical and chemical operation using a working solution (including a polishing solution, a chemical solution and a cleaning solution) from the outermost layer of the buried metal (step 2), whereby an interconnection structure is prepared.例文帳に追加

半導体ウエハ等の基材に設けた微細な凹みに導電性の金属材料を埋込み（工程１）、その後埋込み金属の最外層側から、金属材料表面を作業液（研摩液や薬液、洗浄液を含む）を用いて機械的・化学的作用によって研摩する（工程２）ことによって配線構造を製造する。 - 特許庁

As to a thermal recording material provided with a thermal color developing layer which contains a colorless or light colored coloring compound and a color developing compound which makes it develop color upon heating as main components on a substrate, the thermal material is characterized by containing bis(3-allyl-4-hydroxyphenyl)sulfone having α-type crystal structure as a color developing compound and a compound represented by the following formula (1).例文帳に追加

支持体上に通常無色ないし淡色の発色性化合物、該発色性化合物を熱時発色させうる顕色性化合物を主要成分として含有する感熱発色層を設けた感熱記録材料において、顕色性化合物としてα型の結晶型を有するビス（３−アリル−４−ヒドロキシフェニル）スルホンと下記式（１） - 特許庁

The ZnO buffer layer 3 having small specific resistance is grown on a conductive Si substrate 2, and n-type GaN, n-type AlGaN, InGaN (light emitting), p-type AlGaN, and p-type GaN layers 4, 5, 6, 7, and 8 are successively grown, thus forming the semiconductor light emitting device 1 having double hetero junction structure.例文帳に追加

導電性Ｓｉ基板２の上に比抵抗の小さなＺｎＯバッファ層３を成長させ、ＺｎＯバッファ層３の上に順次ｎ型ＧａＮ層４、ｎ型ＡｌＧａＮ層５、ＩｎＧａＮ層（発光層）６、ｐ型ＡｌＧａＮ層７、ｐ型ＧａＮ層８を成長させることにより、ダブルへテロ接合構造の半導体発光素子１を形成する。 - 特許庁

A surface emitting laser 40 is provided with an n-type buffer layer 14, a lower semiconductor multilayer film reflecting mirror 44, a luminous layer structure 18 and an upper semiconductor multilayer film reflecting mirror 20 in order on a GaAs substrate 12 and moreover, is provided with a surface electrode 22 on the upper surface thereof and is provided with a rear side electrode 24 and a rear multilayer film reflecting mirror 42 on the rear thereof.例文帳に追加

本面発光レーザ４０は、Ｇa Ａs 基板１２上に、順次、ｎ−ＧａＡｓバッファ層１４、下部半導体多層膜反射鏡４４、発光層構造１８、及び上部半導体多層膜反射鏡２０を備え、更に、上面に表面側電極２２、及び裏面に裏面側電極２４と裏面多層膜反射鏡４２を備えている。 - 特許庁

As a p-type contact layer composed of AlGaN is grown by a MOVPE method as the uppermost layer of the lamination structure of a GaN series semiconductor to be formed on a substrate, ammonia and an inert gas with respect to the GaN semiconductor are introduced into a growing furnace so that a ratio of ammonia is set to 0 to 0.025, while a temperature of the p-type contact layer is dropped.例文帳に追加

基板上に形成するＧａＮ系半導体の積層構造の最上層として、ＡｌＧａＮからなるｐ型コンタクト層をＭＯＶＰＥ法により成長した後、成長炉内にアンモニアと、ＧａＮ系半導体に対して不活性なガスとを、アンモニアの比率が０〜０．０２５となるように導入しながら、ｐ型コンタクト層の降温を行う。 - 特許庁

In the method, hardness information of in-vitro incubated tissue, having a three-dimensional structure in which hardness or elasticity thereof changes with passing of a cultivation period, is measured; the states of cell multiplication and the quantity of a product substrate are grasped from the measurement results; and transplantation aptitude of the incubated tissue judged from the states.例文帳に追加

インビトロで培養され、培養期間の経過に伴って硬さまたは弾性が変化する三次元構造を有する培養組織の硬さ情報を測定し、該測定結果に基づいて細胞の増殖および産生基質の量の状態を把握し、当該状態に基づいて、培養組織の移植適性を判定する培養組織の品質管理方法。 - 特許庁

A surface side electrode member has laminated structure comprising a transparent conductive film layer installed on the one side surface of a transparent substrate and a layer (A) comprising metal oxide fine particle group installed on the upper surface of the transparent conductive film layer, and the scratch hardness of the layer (A) is a pencil hardness of 3H or more.例文帳に追加

透明基板の片側表面に設けられた透明導電膜層及び該透明導電膜層の上面に設けられた金属酸化物の微粒子群からなる層（Ａ）が形成された積層構造を有し、層（Ａ）の引っかき強度が鉛筆硬度３Ｈ以上を有する色素増感太陽電池用の表面側電極部材。 - 特許庁

The other objective ink-jet printer has a head of electrostatic type consisting of a laminated structure made up of three Si single crystal substrates 101-103; wherein the 1st substrate is provided with a diaphragm 105, a liquid chamber 106, a fluid resistance unit 107 and an ink cavity 108.例文帳に追加

（Ｒ_1〜Ｒ_4は直鎖状、分岐状、環状アルキル基、ヒドロキシアルキル基、ハロゲン化アルキル基、置換／無置換のフェニル基を表す。）図５は静電方式のヘッド部の全体図で、ヘッドは３枚のＳｉ単結晶基板１０１〜１０３の積層構造からなり、第１基板に振動板１０５、液室１０６、流体抵抗部１０７、インクキャビティ１０８が設けられている。 - 特許庁

The vertically aligned liquid crystal device having an over-layer structure is provided with: a data line on the element substrate side; a switching element such as TFD connected with the data line; an insulating film formed on the data line and switching element; a pixel electrode formed on the insulating film; and a contact hole which connects the switching element to the pixel electrode.例文帳に追加

オーバーレイヤー構造を有する垂直配向方式の液晶装置であって、素子基板側にデータ線と、データ線と接続されたＴＦＤなどのスイッチング素子と、データ線とスイッチング素子の上に形成された絶縁膜と、当該絶縁膜の上に形成された画素電極と、スイッチング素子と画素電極とを接続するコンタクトホールとを備える。 - 特許庁

The coating liquid containing hydrophilic inorganic fine particles such as silica and preferably siliceous substance for binding and having 18 to 93 molar ratio of SiO2/alkali, is uniformly applied to a tile rear surface or a substrate structure surface, then is subjected to heat treatment or drying to form a hydrophilic layer in which the silica fine particles are bound by a siliceous binder.例文帳に追加

タイル裏面又は下地構造体表面にシリカ等の親水性無機質微粒子と好ましくは結合用珪酸質物質とを含有し、かつＳｉＯ_2／アルカリのモル比を１８〜９３とした塗布液を均一に塗付し、ついで熱処理又は乾燥することによりシリカ微粒子を珪酸質バインダーで結合した親水層を形成する。 - 特許庁

To provide an absorptive multilayer film ND (neutral density) filter which is constituted by providing an absorptive multilayer film for attenuating transmitted light in a visible light region on a resin film being a substrate, which is excellent in optical characteristics without changing film structure of the absorptive multilayer film and further in which no crack occurs even under high temperature and high humidity environment.例文帳に追加

基板である樹脂フィルムに可視光領域の透過光を減衰させる吸収型多層膜を設けた吸収型多層膜ＮＤフィルターについて、吸収型多層膜の膜構造を変更することなく、光学特性に優れると同時に、高温高湿環境下においてもヒビ割れが発生しない吸収型多層膜ＮＤフィルターを提供する。 - 特許庁

To obtain a unit cell structure suited to a highly integrated device and a high speed operation in a semi-customized conductor integrated circuit device wherein the degree of freedom about the substrate design of transistors is improved and the wiring layer conversion for processing input/output signals of unit cells which would obstruct the layout of other wiring layers is possibly reduced.例文帳に追加

セミカスタム半導体集積回路装置において、トランジスタの下地の設計に関する自由度を向上させ、更に、他の配線層敷設の妨げとなるような、ユニットセルの入出力信号を処理するための配線層変換を極力低減した、設計自由度が高く、高集積化および高速動作に適したユニットセルの構造を実現する。 - 特許庁

To provide a manufacturing method of a semiconductor device having a structure in which a first transistor and a second transistor are formed on the same semiconductor substrate so as to share the drain region and the source region with each other, which can efficiently form embedded insulation films directly below the source region and the drain region of each transistor.例文帳に追加

第１のトランジスタと第２のトランジスタが、ぞれぞれのドレイン領域とソース領域を共有して同一の半導体基板上に形成される構成の半導体装置の製造において、それぞれのトランジスタのソース領域およびドレイン領域の直下に埋め込み絶縁膜を効率的に形成できる製造方法を提供する。 - 特許庁

In the electrophotographic photoreceptor having a photosensitive layer on a conductive substrate, a vinyl chloride resin is used which is obtained by subjecting a vinyl chloride polymer having hydroxyl groups, epoxy groups and sulfur-containing strong acid radicals as substituents to esterification treatment with an acid to provide a structure in which the epoxy groups and the hydroxyl groups are partly converted into ester groups.例文帳に追加

導電性基体上に感光層を備えた電子写真感光体において、水酸基、エポキシ基、および硫黄を含む強酸根を置換基としてもつ塩化ビニル系重合体に酸によるエステル化処理が施され、エポキシ基および前記水酸基が部分的にエステル基となっている構造を持つ塩化ビニル系樹脂を用いた。 - 特許庁

An oxide semiconductor element includes: a gate electrode disposed on a substrate; a gate insulation layer including a recess structure; a source electrode disposed on one side of the gate insulation layer; a drain electrode disposed on the other side of the gate insulation layer; and an active pattern disposed on the gate insulation layer, the source electrode, and the drain electrode.例文帳に追加

酸化物半導体素子は、基板上に配置されるゲート電極と、リセス構造を含むゲート絶縁層と、ゲート絶縁層の一側上に配置されるソース電極と、ゲート絶縁層の他側上に配置されるドレーン電極と、ゲート絶縁層、ソース電極、及びドレーン電極上に配置されるアクティブパターンとを含むようにすることができる。 - 特許庁

The crystal silicon device has a structure where a single crystal silicon substrate 10, and a plurality of nano-Si poles (almost cylindrical crystal silicone) 16 which stand perpendicularly so that they may have the same crystal plane orientation as a main surface, are sandwiched with a transparent electrode 19 which is brought into contact with upper faces of the nano-Si poles (almost cylindrical crystal silicone) 16 and a metallic electrode 18.例文帳に追加

単結晶シリコン基板１０と、その主表面と同一の結晶面方位を有するように略垂直に立つ複数個のナノＳｉ柱（略円柱状結晶シリコン）１６とを、ナノＳｉ柱（略円柱状結晶シリコン）１６の上面に接する透明電極１９及び金属電極１８で挟み込む構造を有する結晶シリコン素子。 - 特許庁

This plasma CVD device has a hollow structure of plasma confinement electrode plate 5 for plasma isolation being provided with a plurality of holes, between a plasma generation region and a substrate processing region, and the plasma confinement electrode plate 5 is provided with a radical passage hole and a neutral gas passage hole, and plural sheets of gas diffusion plates 7 (11 and 12) having holes are provided inside the plasma confinement electrode plate.例文帳に追加

プラズマ生成領域と基板処理領域との間に、複数の孔が設けられたプラズマ分離用の中空構造のプラズマ閉込電極板５を有し、プラズマ閉込電極板５には、ラジカル通過孔と中性ガス通過孔が設けられ、プラズマ閉込電極板の内側には、孔を有するガス拡散板７（１１，１２）が複数枚設けられている。 - 特許庁

This inertia sensor is provided with an oscillation driving part 15 and an oscillation detecting part 17 constituted of a piezoelectric element having structure layered respectively with lower side electrodes 19, 21, piezoelectric thin film layers 23, 25 and an upper side electrode 27, to be juxtaposed along a direction orthogonal to a direction aligned with the first and second node parts N1, N2, on one face 6 of the substrate 5.例文帳に追加

基板５の片面６上に、第１及び第２の節部Ｎ１及びＮ２が並ぶ方向と直交する方向に並ぶように、それぞれ下側電極層１９，２１と圧電体薄膜層２３，２５と上側電極層２７とが積層された構造を有する圧電素子から構成された振動駆動部１５及び振動検出部１７とを備えている。 - 特許庁

The floor substrate structure is constructed by arranging a plurality of heat insulation plates 3 side by side on a floor slab 1 obtained by closely laying a plurality of concrete panels 2, inserting spacer members 5 which each have a height equal to or larger than the thickness of the heat insulation plate, into a plurality of through holes 4 formed in the heat insulation plates 3, and laying floor substrates 6 on the spacer members 5.例文帳に追加

複数のコンクリートパネル２を敷きつめてなる床スラブ１の上に、複数枚の断熱板３が並べられるとともに、該断熱板３に形成された複数の貫通穴４内に、断熱板の厚さと同じかそれより大きい高さを有するスペーサ部材５がそれぞれ設けられ、これらスペーサ部材５の上に、床下地材６が敷設されている。 - 特許庁

To provide an effective method for depositing inert polymers and pharmaceutical or biological agents onto a substrate, where the collection process is efficient, the coating produced is conformal, substantially defect-free and uniform, the composition of the coating can be regulated and the morphology and/or secondary structure of the pharmaceutical or biological agents can be controlled.例文帳に追加

不活性ポリマーと医薬又は生物学的製剤とを基材に付着させるための効率の良い方法であって、捕集プロセスは効率的であり、生じるコーティングは表面に沿い（ｃｏｎｆｏｒｍａｌ）、実質的に欠点がなく均一であり、コーティングの組成は規制することができ、医薬又は生物学的製剤のモルホロジー及び／又は２次構造は制御可能な方法の提供。 - 特許庁

In the near IR cutting-off member having a structure in which a near IR (NIR) cutting-off layer and an adhesive layer disposed on a transparent supporting substrate are adjacent to each other, a specified compound represented by a formula is added to the near IR cutting-off layer and/or the adhesive layer at a rate of 0.01-0.5 wt.%.例文帳に追加

透明担持基体上に設けられた、近赤外線（ＮＩＲ）カット層と接着層とが隣接する構成を有する近赤外線カット部材において、近赤外線カット層若しくは接着層又はその両者に、一般式で表される特定の化合物を０．０１〜０．５重量％の割合で添加することを特徴とする近赤外線カット部材。 - 特許庁

An isolation structure consisting of a siliceous film having a refractive index of 1.4 or higher is formed by coating the surface of a substrate with a first polysilazane composition containing an agent for rendering porous, and calcining the first polysilazane composition to form a porous siliceous film having a refractive index of 1.3 or lower, thereafter impregnating the surface of the film with a second polysilazane composition and calcining the film.例文帳に追加

基板表面に多孔質化剤を含む第１のポリシラザン組成物を塗布および焼成して、屈折率が１．３以下の多孔質シリカ質膜を形成させ、次いでその膜の表面に第２のポリシラザン組成物を含浸させ、焼成することにより、屈折率１．４以上のシリカ質膜からなるアイソレーション構造を形成させる。 - 特許庁

A capacitance 4 for detection having the same layer structure as the auxiliary capacitance 22 disposed in each pixel is provided on an array substrate 1, a capacity value of the capacitance 4 for detection is detected as a representative of the plurality of auxiliary capacitances 22 and a potential amplitude ΔVcs of a power source wiring line Y connected to the auxiliary capacitance 22 is adjusted based on the detected value.例文帳に追加

各画素に配置された補助容量２２と同一の層構造をもつ検出用容量４をアレイ基板１に設け、複数ある補助容量２２の代表として検出用容量４の容量値を検出し、この検出値に基づいて補助容量２２に接続された電源配線Ｙの電位振幅ΔＶcsを調整する。 - 特許庁

The building structure includes: a releasable fastening means 30 which individually fastens the adjacent panels 10 with each other; receiving grooves 12 for a rod-like filling member 20, which are provided in the panels 10 along the edges of opposed surfaces of the panels 10; and the rod-like filling member 20 which is infilled into the receiving groove 12 and which can be utilized as a substrate material.例文帳に追加

連接するパネル１０同士をそれぞれ個別に締結する締結解除可能な締結手段３０と，パネル１０同士の対向面の端部に沿ってパネル１０に設けられた，棒状充填部材２０の受け入れ溝１２と，受け入れ溝１２に充填された，下地材として利用できる棒状充填部材２０とを備えている。 - 特許庁

To produce a lopopolymer in which the dispersion degrees (Mw/Mn, Mw denotes the weight average molecular weight and Mn denotes the number average molecular weight) of a polymer therein lie in specified ranges without undergoing an complicated process, and further, to provide a structure similar to a biomembrane obtained by forming the lipopolymer on a metal substrate as a component molecular via an active group located at the terminal of the lipopolymer.例文帳に追加

リポポリマーのポリマーとして、分散度(Mw/Mn、Mwは重量平均分子量、Mnは数平均分子量を表す)が特定の範囲にあり、リポポリマーについて煩雑な工程を経ることなく製造することができ、又、リポポリマーの末端に位置する活性基を介して、このリポポリマーを構成分子として金基板上に構築する生体膜類似構造体の提供。 - 特許庁

To provide a light-emitting apparatus capable of selectively causing a plurality of arranged light-emitting elements to emit a light with the small number of signal transmission paths as much as possible without complicating the structure of the apparatus, and being mounted on a substrate such as a circuit board without damaging the light-emitting element, and to provide an image forming apparatus provided with this light-emitting apparatus.例文帳に追加

装置の構造を複雑にすることなく、可及的に少ない信号伝送路によって、配列される複数の発光素子を選択的に発光させることができ、かつ発光素子にダメージを与えることなく回路基板などの基板に実装することができる発光装置およびこの発光装置を備える画像形成装置を提供する。 - 特許庁

The optical information recording medium 1 has a structure wherein a recording layer 3, a semi-transparent reflection layer 4, a heat generating layer 5, a reflection layer 6, a deformation layer 7 and a protective layer 8 are sequentially formed on a first light transmissive substrate 2 and the reflection layer 6 and the deformation layer 7 are thermally deformed by irradiating the heat generating layer 5 with laser light to generate heat.例文帳に追加

光情報記録媒体１は、第一の透光性基板２上に記録層３、半透過反射層４、発熱層５、反射層６、変形層７及び保護層８を順次形成した構造を有し、発熱層６にレーザー光を照射して発熱させることにより、反射層６及び変形層７を熱変形させる。 - 特許庁

A semiconductor laser element 20 is provided with a laminated structure consisting of an n-type InP clad layer 22, an SCH-MQW active layer 23, a p-type first InP clad layer 24, an AlInAs layer 25, a p-type second InP clad layer 26 and a p-type GaInAs contact layer 27, which are formed in order on an n-type InP substrate 21.例文帳に追加

本半導体レーザ素子２０は、ｎ−ＩｎＰ基板２１上に順次形成された、ｎ−ＩｎＰクラッド層２２、ＳＣＨ−ＭＱＷ活性層２３、第一のｐ−ＩｎＰクラッド層２４、ＡｌＩｎＡｓ層２５、第二のｐ−ＩｎＰクラッド層２６、及びｐ−ＧａＩｎＡｓコンタクト層２７からなる積層構造を備えている。 - 特許庁

In an optical structure in which first and second mask layers 21, 22 each having a predetermined design pattern and a wavelength region different from that of the other mask layer as a transmission region are formed on a second transparent substrate 18, first and second LEDs 13, 14 each having a peak of light emission intensity in the wavelength region corresponding to each of the mask layers 21, 22 are disposed.例文帳に追加

所定の意匠パターンを有しそれぞれ他のマスク層とは異なる波長域を透過領域とする第１及び第２のマスク層２１，２２を第２の透明基板１８上に成膜した光学構造体に対してそれらマスク層２１，２２に対応した波長域に発光強度のピークを有する第１及び第２のＬＥＤ１３、１４を配置した。 - 特許庁

This package has a structure wherein a ceramic substrate 12 for taking out a control line, a power source supply, and a high frequency signal line is mounted on a metal plate 11 that serves as a ground, and a package side wall 13 of ceramic is provided and just on it a metal foil 15 sandwiched between a cap 14 made of ceramic and an electromagnetic wave absorber 16 is laminated.例文帳に追加

グランドとなる金属板１１上に制御線および電源、高周波信号線を取り出すためのセラミック基板１２を張り合わせ、セラミックのパッケージ側壁１３を取り付け、その直上にセラミック製キャップ１４と電磁波吸収体１６の間に金属箔１５を挟み込んで張り合わせた構造のパッケージとする。 - 特許庁

The manufacturing method of the communicating porous structure comprises mixing a material to be decomposed which is decomposable with an enzyme in the substrate to obtain a mixed material, forming the mixed material into a formed article having a predetermined shape, and then decomposing and removing the material to be composed contained in the formed article by the enzyme to form cavity portions communicating to the surface in the inside of the formed article.例文帳に追加

連通多孔構造体の製法は、酵素によって分解される被分解材を基材に混入し混入物を得て、前記混入物を所定形状の成形体に成形した後、前記成形体に含まれる前記被分解材を酵素によって分解し除去して、前記成形体内部に表面に連通する空洞部を形成する。 - 特許庁

In a structure in which a light emitting portion constituted of an infrared light emitting element 11 and a visible light emitting element 12 is mounted on a substrate 10 (or a frame) and is subjected to resin molding 15 with a light-transmitting resin, a light scattering area 18 with scattering material 18a mixed therewith is provided around the infrared light emitting element 11 and the visible light emitting element 12.例文帳に追加

赤外線発光素子１１と可視光発光素子１２とからなる発光部が基板１０（またはフレーム）上に実装され、透光性の樹脂によって樹脂モールド１５された構造において、前記赤外線発光素子１１及び可視光発光素子１２の周囲に散乱材１８ａの混入された光散乱領域１８を設けている。 - 特許庁

The laser device comprises a first clad layer 3 formed on a semiconductor substrate 1, an active layer 4 formed on the first clad layer 3 having a strain-multiplex quantum well structure of alternately laminated well layers 4w and barrier layers 4b (barrier layers 4b_1 and optical guide layers 4b_2) having mutually opposite strains, and a second clad layer 5 formed on the active layer 4.例文帳に追加

半導体基板１上に形成された第１のクラッド層３と、第１のクラッド層３上に形成され、互いに逆の歪を有する井戸層４ｗとバリア層４ｂ（障壁層４ｂ_1 および光ガイド層４ｂ_2 ）が交互に積層された歪多重量子井戸構造をもつ活性層４と、活性層４上に形成された第２のクラッド層５とを備える。 - 特許庁

The magneto-resistive element, formed on a substrate and having a spin-valve magneto-resistive structure including a free layer and a pinned layer separated by a non-magnetic spacer layer, includes layers of a third ferromagnetic layer-a second antiparallel coupling layer-a second ferromagnetic layer-a first antiparallel coupling layer-a first ferromagnetic layer-an antiferromagnetic layer formed on the top of said spacer layer.例文帳に追加

基板上に形成され、非磁性スぺーサ層により分離されているフリー層と固定層を含むスピンバルブ磁気抵抗構造において、前記スぺーサ層の上部に、第３強磁性層−第２反平行結合層−第２強磁性層−第１反平行結合層−第１強磁性層−反強磁性層を含むことを特徴とする。 - 特許庁